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Order this document SEMICONDUCTOR TECHNICAL DATA by MBRB3030CTL/D .using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: Features: • Dual Diode Construction — May be Paralleled for Higher Current Output SCHOTTKY BARRIER • Guardring for Stress Protection RECTIFIER • Low Forward Voltage Drop 30 AMPERES • 125°C Operating Junction Temperature 30 VOLTS • Maximum Die Size • Short Heat Sink Tab Manufactured — Not Sheared! CASE 418B–02 D2PAK Plastic MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage VRR...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MBRB3030CTL/D

.using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: Features: • Dual Diode Construction — May be Paralleled for Higher Current Output SCHOTTKY BARRIER • Guardring for Stress Protection RECTIFIER • Low Forward Voltage Drop 30 AMPERES • 125°C Operating Junction Temperature 30 VOLTS • Maximum Die Size • Short Heat Sink Tab Manufactured — Not Sheared! CASE 418B–02 D2PAK Plastic MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 30 V Working Peak Reverse Voltage VRWM DC Blocking Voltage VR Average Rectified Forward Current IO 15 A (At Rated VR, TC = 115°C) Per Device 30 Peak Repetitive Forward Current IFRM A (At Rated VR, Square Wave, 20 kHz, TC = 115°C) 30 Non–Repetitive Peak Surge Current IFSM A (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) 300 Peak Repetitive Reverse Surge Current IRRM A (1.0 s, 1.0 kHz) 2.0 Storage Temperature Range Tstg – 55 to 150 °C Operating Junction Temperature Range TJ – 55 to 125 °C Voltage Rate of Change dv/dt V/s (Rated VR, TJ = 25°C) 10,000 Reverse Energy, Unclamped Inductive Surge EAS mJ (TJ = 25°C, L = 3.0 mH) 224.5 THERMAL CHARACTERISTICS Thermal Resistance — Junction–to–Case Rtjc 1.0 °C/W Thermal Resistance — Junction–to–Ambient (1) Rtja 50 °C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (2) VF V (IF = 15 A, TJ = 25°C) 0.44 (IF = 30 A, TJ = 25°C) 0.51 Maximum Instantaneous Reverse Current IR mA (Rated VR, TJ = 25°C) 2.0 (Rated VR, TJ = 125°C) 195 (1) Mounted using minimum recommended pad size on FR–4 board. (2) Pulse Test: Pulse Width = 250 µs, Duty Cycle ≤ 2.0%. All device data is “Per Leg” except where noted. This document contains information on a new product. Specifications and information herein are subject to change without notice. Switchmode is a trademark of Motorola, Inc. R Meoctotriofilea,r InDce. 1v9ic97e Data 1, 1000 1000 100 100 TJ = 125°C TJ = 125°C 10 10 75°C 75°C 1.0 25°C 1.0 25°C 0.1 0.1 0.1 0.3 0.5 0.7 0.9 1.1 0.1 0.3 0.5 0.7 0.9 1.1 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage

1.0E+0 1.0E+0 TJ = 125°C 1.0E–1 1.0E–1 TJ = 125°C 1.0E–2 1.0E–2 75°C 75°C 1.0E–3 1.0E–3 25°C 25°C 1.0E–4 1.0E–4 1.0E–5 1.0E–5 0 5.0 10 15 20 25 30 0 5.0 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)

Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current

25 10 dc 9.0 dc 20 8.0 Ipk/Io = SQUARE

WAVE

SQUARE WAVE 7.0 15 6.0 Ipk/Io = 5.0 Ipk/Io = 5.0 Ipk/Io = 5.0 Ipk/Io = 10 10 4.0 Ipk/Io = 20 Ipk/Io = 10 3.0 5.0 Ipk/Io = 20 2.0 TJ = 125°C FREQ = 20 kHz 1.000020 40 60 80 100 120 140 0 5.0 10 15 20 25 TC, CASE TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS)

Figure 5. Current Derating Figure 6. Forward Power Dissipation

2 Rectifier Device Data IO, AVERAGE FORWARD CURRENT (AMPS) IR, REVERSE CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) I , MAXIMUM REVERSE CURRENT (AMPS) PFO, AVERAGE POWER DISSIPATION (WATTS) R IF, INSTANTANEOUS FORWARD CURRENT (AMPS), 10,000 100 TJ = 25°C TJ = 25°C 100 10 0.1 1.0 10 100 0.00001 0.0001 0.001 0.01 VR, REVERSE VOLTAGE (VOLTS) t, TIME (seconds)

Figure 7. Typical Capacitance Figure 8. Typical Unclamped Inductive Surge

1.0E+00 1.0E–01 Rtjc(t) = Rtjc*r(t) 1.0E–02 0.00001 0.0001 0.001 0.01 0.1 1.0 10 t, TIME (seconds)

Figure 9. Typical Thermal Response Rectifier Device Data 3

RT, TRANSIENT THERMAL RESISTANCE C, CAPACITANCE (pF) (NORMALIZED) IPK, PEAK SURGE CURRENT (AMPS), Prepared by: David Shumate & Larry Walker Motorola Semiconductor Products Sector ABSTRACT devices used in this switching power circuitry. This technology lends itself to lower reverse breakdown voltages. This com- Power semiconductor rectifiers are used in a variety of ap- bination of high voltage spikes and low reverse breakdown plications where the reverse energy requirements often vary voltage devices can lead to reverse energy destruction of dramatically based on the operating conditions of the applica- power rectifiers in their applications. This phenomena, howev- tion circuit. A characterization method was devised using the er, is not limited to just schottky technology. Unclamped Inductive Surge (UIS) test technique. By testing In order to meet the challenges of these situations, power at only a few different operating conditions (i.e. different induc- semiconductor manufacturers attempt to characterize their tor sizes) a safe operating range can be established for a de- devices with respect to reverse energy robustness. The typi- vice. A relationship between peak avalanche current and in- cal reverse energy specification, if provided at all, is usually ductor discharge time was established. Using this relationship given as energy–to–failure (mJ) with a particular inductor spe- and circuit parameters, the part applicability can be deter- cified for the UIS test circuit. Sometimes, the peak reverse test mined. This technique offers a power supply designer the total current is also specified. Practically all reverse energy charac- operating conditions for a device as opposed to the present terizations are performed using the UIS test circuit shown in single–data–point approach. Figure 10. Typical UIS voltage and current waveforms are INTRODUCTION shown in Figure 11. In order to provide the designer with a more extensive char- In today’s modern power supplies, converters and other acterization than the above mentioned one–point approach, switching circuitry, large voltage spikes due to parasitic induc- a more comprehensive method for characterizing these de- tance can propagate throughout the circuit, resulting in cata- vices was developed. A designer can use the given informa- strophic device failures. Concurrent with this, in an effort to tion to determine the appropriateness and safe operating area provide low–loss power rectifiers, i.e. devices with lower for- (SOA) of the selected device. ward voltage drops, schottky technology is being applied to HIGH SPEED SWITCH CHARGE INDUCTOR DRAIN CURRENT FREE–WHEELING

DIODE

+ INDUCTOR

V

– CHARGE

SWITCH

DRAIN VOLTAGE

DUT GATE VOLTAGE

Figure 10. Simplified UIS Test Circuit 4 Rectifier Device Data,

Suggested Method of Characterization ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁTable 1. UIS Test Data ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

ÁPAÁRTÁÁÁÁÁÁEÁNERÁGYÁÁÁÁTIMENO. IP (A) BVR (V) (mJ) L (mH) (Ás) Á Á1 ÁÁÁ46.6ÁÁ65Á.2 ÁÁ998Á.3 ÁÁ1ÁÁ7Á15 Á INDUCTOR Á2 ÁÁÁ41.7ÁÁ63Á.4 ÁÁ870Á.2 ÁÁ1ÁÁ6Á57 Á CURRENT DUT REVERSE Á3 ÁÁÁ46.0ÁÁ66Á.0 ÁÁ1038Á.9 ÁÁ1ÁÁ6Á97 Á VOLTAGE Á4 ÁÁÁ42.7ÁÁ64Á.8 ÁÁ904Á.2 ÁÁ1ÁÁ6Á59 Á Á5 ÁÁÁ44.9ÁÁ64Á.8 ÁÁ997Á.3 ÁÁ1ÁÁ6Á93 Á Á6 ÁÁÁ44.1ÁÁ64Á.1 ÁÁ865Á.0 ÁÁ1ÁÁ6Á87 Á Á7 ÁÁÁ26.5ÁÁ63Á.1 ÁÁ1022Á.6 ÁÁ3ÁÁ12Á61Á Á8 ÁÁÁ26.4ÁÁ62Á.8 ÁÁ1024Á.9 ÁÁ3ÁÁ12Á62Á Á9 ÁÁÁ24.4ÁÁ62Á.2 ÁÁ872Á.0 ÁÁ3ÁÁ11Á78 Á TIME (s) Á10ÁÁÁ27.6ÁÁ62Á.9 ÁÁ1091Á.0 ÁÁ3ÁÁ13Á16Á

Figure 11. Typical Voltage and Current UIS Á11ÁÁÁ27.7ÁÁ63Á.2 ÁÁ1102Á.4 ÁÁ3ÁÁ13Á14Á Waveforms Á12ÁÁÁ17.9ÁÁ62Á.6 ÁÁ1428Á.6 ÁÁ10ÁÁ28Á51Á

13 18.9 62.1 1547.4 10 3038

Utilizing the UIS test circuit in Figure 10, devices are tested ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

to failure using inductors ranging in value from 0.01 to 159 mH. Á14ÁÁÁ18.8ÁÁ60Á.7 ÁÁ1521Á.1 ÁÁ10ÁÁ30Á92Á

The reverse voltage and current waveforms are acquired to 15 19.0 62.6 1566.2 10 3037

determine the exact energy seen by the device and the induc- ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ 16 74.2 69.1 768.4 0.3 322 tive current decay time. At least 4 distinct inductors and 5 to ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ 10 devices per inductor are used to generate the characteristic 17 77.3 69.6 815.4 0.3 333 current versus time relationship. This relationship when ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ18 75.2 68.9 791.7 0.3 328 coupled with the application circuit conditions, defines the ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ 19 77.3 69.6 842.6 0.3 333

SOA of the device uniquely for this application. Á20ÁÁÁ73.8ÁÁ69Á.1 ÁÁ752Á.4 ÁÁ0.3ÁÁ3Á21 Á Example Application Á21ÁÁÁ75.6ÁÁ69Á.2 ÁÁ823Á.2 ÁÁ0.3ÁÁ3Á28 Á The device used for this example was an MBR3035CT, Á22ÁÁÁ74.7ÁÁ68Á.6 ÁÁ747Á.5 ÁÁ0.3ÁÁ3Á27 Á

which is a 30 A (15 A per side) forward current, 35 V reverse ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ breakdown voltage rectifier. All parts were tested to destruc- 23 78.4 70.3 834.0 0.3 335 tion at 25°C. The inductors used for the characterization were Á24ÁÁÁ70.5ÁÁ66Á.6 ÁÁ678Á.4 ÁÁ0.3ÁÁ3Á17 Á 10, 3.0, 1.0 and 0.3 mH. The data recorded from the testing Á25ÁÁÁ78.3ÁÁ69Á.4 ÁÁ817Á.3 ÁÁ0.3ÁÁ3Á39 Á were peak reverse current (Ip), peak reverse breakdown volt- age (BVR), maximum withstand energy, inductance and in- ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ductor discharge time (see Table 1). A plot of the Peak Re- The procedure to determine if a rectifier is appropriate, from verse Current versus Time at device destruction, as shown in a reverse energy standpoint, to be used in the application cir-

Figure 12, was generated. The area under the curve is the re- cuit is as follows:

gion of lower reverse energy or lower stress on the device. a. Obtain “Peak Reverse Current versus Time” curve from

This area is known as the safe operating area or SOA. data book.

120 b. Determine steady state operating voltage (OV) of circuit. c. Determine parasitic inductance (L) of circuit section of interest. 100 d. Obtain rated breakdown voltage (BVR) of rectifier from data book. 80 e. From the following relationships, d 60 UIS CHARACTERIZATION CURVEVLi(t)dt (BVROV) t 40 I

L

20 a “designer” l versus t curve is plotted alongside the device SAFE OPERATING AREA characteristic plot. 0 f. The point where the two curves intersect is the current 0 0.0005 0.001 0.0015 0.002 0.0025 0.003 0.0035 0.004 level where the devices will start to fail. A peak inductor TIME (s) current below this intersection should be chosen for safe operating.

Figure 12. Peak Reverse Current versus As an example, the values were chosen as L = 200 H, Time for DUT OV = 12 V and BVR = 35 V. Rectifier Device Data 5

, Figure 13 illustrates the example. Note the UIS character- SUMMARY ization curve, the parasitic inductor current curve and the safe operating region as indicated. Traditionally, power rectifier users have been supplied with single–data–point reverse–energy characteristics by the sup- 120 plier’s device data sheet; however, as has been shown here and in previous work, the reverse withstand energy can vary I — TIME RELATIONSHIP significantly depending on the application. What was done in100 peak DUE TO CIRCUIT PARASITICS this work was to create a characterization scheme by which the designer can overlay or map their particular requirements 80 onto the part capability and determine quite accurately if the chosen device is applicable. This characterization technique 60 is very robust due to its statistical approach, and with proper guardbanding (6) can be used to give worst–case device per- 40 UIS CHARACTERIZATION CURVE formance for the entire product line. A “typical” characteristic curve is probably the most applicable for designers allowing 20 them to design in their own margins. SAFE OPERATING AREA

References

0 0.0005 0.001 0.0015 0.002 0.0025 0.003 0.0035 0.004 1. Borras, R., Aliosi, P., Shumate, D., 1993, “Avalanche TIME (s) Capability of Today’s Power Semiconductors, “Proceed- Figure 13. DUT Peak Reverse and Circuit ings, European Power Electronic Conference,” 1993, Parasitic Inductance Current versus Time Brighton, England 2. Pshaenich, A., 1985, “Characterizing Overvoltage Tran- sient Suppressors,” Powerconversion International, June/July 6 Rectifier Device Data,

PACKAGE DIMENSIONS C E NOTES: V 1. DIMENSIONING AND TOLERANCING PER ANSI B Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.340 0.380 8.64 9.65

A B 0.380 0.405 9.65 10.29 S C 0.160 0.190 4.06 4.83

D 0.020 0.035 0.51 0.89 E 0.045 0.055 1.14 1.40 G 0.100 BSC 2.54 BSC –T– H 0.080 0.110 2.03 2.79K SEATING J 0.018 0.025 0.46 0.64 PLANE K 0.090 0.110 2.29 2.79GJS0.575 0.625 14.60 15.88 V 0.045 0.055 1.14 1.40

H D 3 PL

0.13 (0.005) M T STYLE 1: STYLE 2: STYLE 3: PIN 1. BASE PIN 1. GATE PIN 1. ANODE 2. COLLECTOR 2. DRAIN 2. CATHODE 3. EMITTER 3. SOURCE 3. ANODE

CASE 418B–02 4. COLLECTOR 4. DRAIN 4. CATHODE ISSUE B Rectifier Device Data 7

, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 Mfax: email is hidden – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET: http://motorola.com/sps 8 ◊ RectifMieBr RDBe3v0ic3e0 CDTaLta/D]
15

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DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BZX79 series Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION • Total power dissipation: Low-power voltage regulator diodes in hermetically sealed leaded gl
DISCRETE SEMICONDUCTORS DATA SHEET BZX55 series Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of April 1992 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BZX55 series Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION • Total power dissipation: Low-power voltage regulator diodes in hermetically sealed leaded gl
DISCRETE SEMICONDUCTORS DATA SHEET BZX284 series Voltage regulator diodes Product specification 1995 Dec 13 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D154 BZX284 series Voltage regulator diodes Product specification 1995 Dec 13 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION • Total power dissipation: Low-power voltage regulator diodes in a small ceramic SMD SOD110 package. max
DISCRETE SEMICONDUCTORS DATA SHEET BZW03 series Voltage regulator diodes Product specification 1996 May 14 Supersedes data of April 1992 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BZW03 series Voltage regulator diodes Product specification 1996 May 14 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION construction. This package is hermetically sealed and fatigue free • Glass