Download: Features Package Description 2 - SENSE

SEMICONDUCTORHGTB12N60D1C April 1995 12A, 600V Current Sensing N-Channel IGBT Features Package • 12A, 600V JEDEC TS-001AA (5 LEAD TO-220) • rDS(ON) .0.27Ω 5432• Low VCE(SAT) at 25A .2.5V (Typ) • Ultra-Fast Turn-On .100ns (Typ) COLLECTOR • Polysilicon MOS Gate - Voltage Controlled Turn On/Off (FLANGE) • High Current Handling at +100oC..10A • Current Sensing Pilot 1 - GATE Description 2 - SENSE 3 - COLLECTOR The HGTB12N60D1C Insulated-Gate Bipolar Transistor is a MOS-gate 4 - (KELVIN) EMITTER 5 - EMITTER turn on/off power switching device combining the best advantages of power MOSFETs and bipola...
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SEMICONDUCTORHGTB12N60D1C April 1995 12A, 600V Current Sensing N-Channel IGBT

Features Package

• 12A, 600V JEDEC TS-001AA (5 LEAD TO-220) • rDS(ON) .0.27Ω 5432• Low VCE(SAT) at 25A .2.5V (Typ) • Ultra-Fast Turn-On .100ns (Typ) COLLECTOR • Polysilicon MOS Gate - Voltage Controlled Turn On/Off (FLANGE) • High Current Handling at +100oC..10A • Current Sensing Pilot 1 - GATE

Description 2 - SENSE

3 - COLLECTOR The HGTB12N60D1C Insulated-Gate Bipolar Transistor is a MOS-gate 4 - (KELVIN) EMITTER 5 - EMITTER turn on/off power switching device combining the best advantages of power MOSFETs and bipolar transistors, and current sensing pilots. The result is a device that has the high input impedance of MOSFETs and the low on-state conduction losses similar to bipolar transistors. The device Terminal Diagram design and gate characteristics of the IGBT are also similar to power MOS- N-CHANNEL ENHANCEMENT MODE FETs. An important difference is the equivalent rDS(ON) drain resistance C which is modulated to a low value (ten times lower) when the gate is turned on. The much lower on-state voltage drop also varies only moderately between +25oC and +150oC, offering extended power handling capability.

G

The IGBT is ideal for many high-voltage switching applications operating at E low frequencies and where low conduction losses are essential, such as AC and DC motor controls, power supplies and drivers for solenoids, S EK relays and contactors. PACKAGING AVAILABILITY PART NUMBER PACKAGE BRAND HGTB12N60D1C TS-001AA 12N60D1C NOTE: When ordering, use the entire part number.

Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified

HGTB12N60D1C UNITS Collector-Emitter Voltage (VGE = 0V) ..VCES 600 V Collector-Gate Voltage (RGE = 1MΩ) .VCGR 600 V Collector Current Continuous at TC = +100 oC .IC 12 A at TC = +25 oC .IC 18 A Collector Current Pulsed (Note 1) .ICM 40 A Gate-Emitter Voltage .VGE ±25 V Power Dissipation Total at TC = +25 oC .PD 75 W Power Dissipation Derating TC > +25 oC .0.6 W/oC Operating and Storage Junction Temperature Range .TJ, TSTG -55 to +150 oC Thermal Resistance, Junction to Case.R 1.67 oθJC C/W Maximum Lead Temperature for Soldering .T 260 oL C (1/8 inch from case for 5s) NOTE: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Gate control turn-off not allowed above 50A. HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641 4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. File Number 2326.3 Copyright © Harris Corporation 1995 3-42,

Specifications HGTB12N60D1C Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS

PARAMETERS SYMBOL TEST CONDITIONS MIN TYP MAX UNITS OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage BVCES IC = 25µA, VGE = 0V 600 - - V Collector Cut-Off Current I oCES TC = +25 C, VGE = 0V, - - 250 µA VCE = Maximum Rating oC, VGE = 0V, - - 4 mA VCE = Maximum Rating x 0.8 (Note 1) Gate-Emitter Leakage Current IGES VGE = ±20V - - ±500 nA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V oGE(TH) VCE = VGE, TC = +25C245VIC = 250µA oC - 2.5 - V Collector-Emitter Saturation Voltage VCE(SAT) VGE = 15V, IoC= 10A, TC = +25 C - 2.5 2.7 V VGE = 15V, IC = 10A, TC = +150 oC - 2.8 - V VGE = 10V, IC = 10A, TC = +25 oC - 2.9 - V DYNAMIC CHARACTERISTICS Input Capacitance CIES VGE = 0V, VCE = 25V, f = 1MHz - 1050 - pF Output Capacitance COES - 340 - pF Reverse Transfer Capacitance CRES - 10 - pF SWITCHING CHARACTERISTICS (See Figures 8 and 9) (Note 2) Turn-On Delay Time t Resistive Load, T = +125oD(ON) J C, - 100 - ns IC = 10A, VCE = 500V, VGE = 15V, Rise Time tR R - 100 - nsG(ON) = 50Ω, RG(OFF) = 100Ω Turn-Off Delay Time tD(OFF) - 0.4 - µs Fall Time tF - 2.5 - µs Turn-Off Delay Time tD(OFF)I Inductive Load, ToJ= +125 C, - 0.8 1.2 µs L = 45µH, IC = 10A, VCE(CLAMP) = 500V, Fall Time tFI V = 15V, R = 50Ω, - 0.8 1.0 µsGE G(ON) R = 100Ω Equivalent Fall Time t G(OFF)F(EQ) - 0.6 0.8 µs Turn-Off Switching Losses WOFF - 1.6 2.0 mJ PILOT CHARACTERISTICS (Notes 2, 3 and 4) Pilot-Emitter Kelvin Voltage VPEK VGE = 15VDC, RP = 2kΩ IC = 5A - 1.25 - V IC = 10A 1.4 1.67 1.8 V IC = 20A - 2.06 - V NOTES: 1. Applies for 3.3o° C per watt maximum thermal resistance, case-to-ambient. 2. Pulse test: Pulse widths ≤ 300µs, duty cycle ≤ 2%. 3. Refer to Figure 10. 4. When not in use connect S to emitter. 3-43,

Typical Performance Curves

VGE = 20V VGE = 14V VGE = 12V 25 VGE = 15V T = +25oC MAX. PULSE WIDTH = 300µsC o MAX. DUTY CYCLE = 2% MAX. DUTY CYCLE = 2% TC = +25 C 30 MAX. PULSE WIDTH = 200µs 20 VGE = 10V TC = -55 oC 20 VGE = 9V TC = +150 oC 15 V = 8V 10GE 10VV= 4V GE = 7V GE55VGE = 6V VGE = 5V000246810 12012345VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VCE(ON), COLLECTOR-EMITTER SATURATION VOLTAGE (V) FIGURE 1. TYPICAL OUTPUT CHARACTERISTICS FIGURE 2. TYPICAL COLLECTOR-EMITTER SATURATION

VOLTAGE

160 1.4 VGE(TH) 140 1.2 BVCES VCE(SAT) V 120 AT1A CE(SAT) AT 10A 1.0

V

100 CE(SAT)AT 10A BVCES 0.8 VCE(SAT) AT 1A 80 VGE(TH) VGE = 10V VGE = 15V 0.660 PARAMETER CONDITIONS +25oC TYP. VALUE VGE(TH) IC = 250µA 4.0V 40 0.4 VCE(SAT) IC = 10A, VGE = 15V 2.5V 0.2 IC = 1A, VGE = 15V 1.1V20 BVCES IC = 1mA VCES Rating 0 0.00510 15 20 -100 -50 0 +50 +100 +150 ICE, DC COLLECTOR CURRENT (A) TC, CASE TEMPERATURE ( oC) FIGURE 3. MAXIMUM ALLOWABLE CASE TEMPERATURE vs FIGURE 4. TYPICAL TEMPERATURE DEPENDENCE OF DC COLLECTOR CURRENT PARAMETERS 2.9 40 2.8 2.7 2.6 TJ = +125 oC 2.5 30 2.4 2.3 INDUCTIVE OR RESISTIVE LOAD 2.2 TJ = +150 oC, RGE = 100Ω 2.1 2.0 1.9 TJ = +90 oC 1.8 1.7 1.6 T = +25oC 10J 1.5 1.4 1.3 1.20510 20 30 0 100 200 300 400 500 VCE, COLLECTOR-EMITTER VOLTAGE (V)ICE, EMITTER CURRENT (A) FIGURE 5. TYPICAL EMITTER PILOT CHARACTERISTICS FIGURE 6. TURN-OFF SAFE OPERATING AREA 2kΩ PILOT RESISTOR 3-44 VPE, PILOT - EMITTER REF. VOLTAGE (V) T , MAXIMUM ALLOWABLE (oC C) ICE, COLLECTOR CURRENT (A) o ICE, COLLECTOR CURRENT (A) NORMALIZED TO +25 C ICE, COLLECTOR CURRENT (A),

Typical Performance Curves (Continued)

D = 0.5 D = 0.2 20 2.00 D = 0.1 10 1.00 10µs 5.0 0.40 100µs 2.0 0.20 1.0 1ms 0.10 D = 0.05 SINGLE PULSE 0.5 o 10ms D = 0.02TC = +25 C 0.04 D = 0.01 0.2 100ms 0.02 DC SINGLE RECTANGULAR PULSE 0.1 0.0112510 20 50 100 200 500 10-5 10-4 10-3 10-2 10-1 1 VCE, COLLECTOR-EMITTER VOLTAGE (V) tP, PULSE WIDTH (s) FIGURE 7. TURN-ON SAFE OPERATING AREA FIGURE 8. MAXIMUM TRANSIENT THERMAL IMPEDANCE

Test Circuits and Waveforms

L = 45µH 90%V VGE 90% 2 GE1010% 0 S1 RL 90% IC C II CC R 10%SG00EtD(ON) t E D(OFF) E R VP CC VCLttPULSERRGENERATOR VR R CE (CLAMP) R GE PGEN = 50Ω VCE t S1 SWITCH POSITION 1 CLAMPED INDUCTIVE LOAD D(OFF) t 2 RESISTIVE LOADRR(R + R )(R )G(ON) = GEN S GE PULSE WIDTH 60µs V RESISTIVE LOAD INDUCTIVE LOADCC RGEN + RS + RGE L-I , PULSE WIDTH (WAVEFORMS NOT TO SCALE)C MAXIMUM FIGURE 9. BASIC SWITCHING TEST CIRCUIT FIGURE 10. SWITCHING WAVEFORMS

LOAD

+15 +15 6V

C VCC

INPUT 100GE1/2 E ICL7667 KS - + COMP 2kΩ RP (PILOT RESISTOR) FIGURE 11. TYPICAL CIRCUIT UTILIZING THE EMITTER PILOT FOR OVERCURRENT PROTECTION 3-45 ICE, COLLECTOR CURRENT (A) Z³θJC, TRANSIENT THERMAL IMPEDANCE (oC/W)]
15

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