Download: Features Package Description

SEMICONDUCTORHGTA32N60E2 April 1995 32A, 600V N-Channel IGBT Features Package • 32A, 600V JEDEC MO-093AA (5 LEAD TO-218) • Latch Free Operation 5 EMITTER 4 EMITTER KELVIN • Typical Fall Time 620ns 3 COLLECTOR COLLECTOR 2 NO CONNECTION • High Input Impedance (FLANGE) 1 GATE • Low Conduction Loss Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar Terminal Diagram transistor. The much lower on-state voltage drop varies...
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SEMICONDUCTORHGTA32N60E2 April 1995 32A, 600V N-Channel IGBT

Features Package

• 32A, 600V JEDEC MO-093AA (5 LEAD TO-218) • Latch Free Operation 5 EMITTER 4 EMITTER KELVIN • Typical Fall Time 620ns 3 COLLECTOR COLLECTOR 2 NO CONNECTION • High Input Impedance (FLANGE) 1 GATE • Low Conduction Loss

Description

The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar Terminal Diagram transistor. The much lower on-state voltage drop varies only N-CHANNEL ENHANCEMENT MODE moderately between +25oC and +150oC.

C

IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. G

EMITTER

PACKAGING AVAILABILITY KELVIN PART NUMBER PACKAGE BRAND E HGTA32N60E2 TO-218 GA32N60E2 NOTE: When ordering, use the entire part number.

Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified

HGTA32N60E2 UNITS Collector-Emitter Voltage .BVCES 600 V Collector-Gate Voltage RGE = 1MΩ .VCGR 600 V Collector Current Continuous at TC = +25 oC ..IC25 50 A at VGE = 15V at TC = +90 oC ..IC90 32 A Collector Current Pulsed (Note 1) .ICM 200 A Gate-Emitter Voltage Continuous.VGES ±20 V Gate-Emitter Voltage Pulsed .VGEM ±30 V Switching Sage Operating Area TJ = +150 oC ..SSOA 200A at 0.8 BVCES - Power Dissipation Total at TC = +25 oC .PD 208 W Power Dissipation Derating TC > +25 oC .1.67 W/oC Operating and Storage Junction Temperature Range .TJ, TSTG -55 to +150 oC Maximum Lead Temperature for Soldering .TL 260 oC Short Circuit Withstand Time (Note 2) at VGE = 15V .tSC 3 µs at VGE = 10V .tSC 15 µs NOTES: 1. Repetitive Rating: Pulse width limited by maximum junctions temperature. 2. VCE(PEAK) = 360V, TC = +125 oC, RGE = 25Ω. HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641 4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. File Number 2833.3 Copyright © Harris Corporation 1995 3-116,

Specifications HGTA32N60E2 Electrical Specifications T oC = +25 C, Unless Otherwise Specified LIMITS

PARAMETERS SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector-Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 600 - - V Collector-Emitter Leakage Current ICESVoCE = BVCES TC = +25 C - - 250 µA V oCE = 0.8 BVCES TC = +125 C - - 4.0 mA Collector-Emitter Saturation Voltage V oCE(SAT) IC = IC90, TC = +25 C - 2.4 2.9 V VGE = 15V TC = +125 oC - 2.4 3.0 V Gate-Emitter Threshold Voltage VGE(TH) IC = 1.0mA, TC = +25 oC 3.0 4.5 6.0 V VCE = VGE Gate-Emitter Leakage Current IGES VGE = ±20V - - ±500 nA Gate-Emitter Plateau Voltage VGEP IC = IC90, VCE = 0.5 BVCES - 6.5 - V On-State Gate Charge QG(ON) IC = IC90, VGE = 15V - 200 260 nC VCE = 0.5 BVCES VGE = 20V - 265 345 nC Current Turn-On Delay Time tD(ON)I L = 500µH, IC = IC90, RG = 25Ω, - 100 - ns VGE = 15V, TJ = +125 oC, Current Rise Time tRI VCE = 0.8 BVCES - 150 - ns Current Turn-Off Delay Time tD(OFF)I - 630 820 ns Current Fall Time tFI - 620 800 ns Turn-Off Energy (Note 1) WOFF - 3.5 - mJ Thermal Resistance RθJC - 0.5 0.6 oC/W NOTE: 1. Turn-Off Energy Loss (WOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A) The HGTA32N60E2 was tested per JEDEC standard No. 24-1 Meth- od for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

Typical Performance Curves

100 100 V = 15V PULSE DURATION = 250µs GE90 VGE = 10V DUTY CYCLE < 0.5%, VCE = 15V 80 80 PULSE DURATION = 250µs VGE = 8.0V DUTY CYCLE < 0.5%, TC = +25 oC 60 60 VGE = 7.5V TC = +150 oC 50 40 40 T = +25oC VGE = 7.0VC TC = -40 oC V 20 VGE = 5.5V GE = 6.5V VGE = 6.0V0002468100246810 V , GATE-TO-EMITTER VOLTAGE (V) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)GE FIGURE 1. TRANSFER CHARACTERISTICS (TYPICAL) FIGURE 2. SATURATION CHARACTERISTICS (TYPICAL) 3-117, 60 1.0 VGE = 10V AND 15V V oGE = 15V V = 240V TJ = +150 C, RG = 25Ω 50 CE 0.8 L = 50µH 0.6 VGE = 10V VCE = 480V 0.4 0.2 0.0 +25 +50 +75 +100 +125 +150 1 10 100 TC, CASE TEMPERATURE ( oC) ICE, COLLECTOR-EMITTER CURRENT (A) FIGURE 3. MAXIMUM DC COLLECTOR CURRENT vs CASE FIGURE 4. FALL TIME vs COLLECTOR-EMITTER CURRENT

TEMPERATURE

RL = 12Ω 12000 IG(REF) = 2.75mA f = 1MHz GATE- VGE = 10V600 10 10000 EMITTER

VOLTAGE

VCC = BVCES VCC = BVCES 8000 CISS 450 300 5 4000 0.75 BVCES 0.75 BVCES C 150 0.50 BVCES 0.50 BVOSS CES2000 CRSS 0.25 BVCES 0.25 BVCES COLLECTOR-EMITTER VOLTAGE000510 15 20 25 IG(REF) IG(REF) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 20 80IG(ACT) TIME (µs) IG(ACT) FIGURE 5. CAPACITANCE vs COLLECTOR-EMITTER VOLTAGE FIGURE 6. NORMALIZED SWITCHING WAVEFORMS AT CON- STANT GATE CURRENT (REFER TO APPLICATION NOTES AN7254 AND AN7260) 6 20 o TJ = +150 oC TJ = +150C5RG = 25Ω L = 50µH VGE = 10V4 VCE = 480V, VGE = 10V, 15V 1.0

V

2 GE = 15V VCE = 240V, VGE = 10V, 15V 0 0.1 1 10 100 1 10 100 ICE, COLLECTOR-EMITTER CURRENT (A) ICE, COLLECTOR-EMITTER CURRENT (A) FIGURE 7. SATURATION VOLTAGE vs COLLECTOR-EMITTER FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOR- CURRENT EMITTER CURRENT 3-118 V , SATURATION VOLTAGE (V) C, CAPACITANCE (pF) ICE, DC COLLECTOR CURRENT (A)CE(ON) WOFF, TURN-OFF SWITCHING LOSS (mJ) VCE, COLLECTOR-EMITTER VOLTAGE (V) tFI, FALL TIME (µs) VGE, GATE-EMITTER VOLTAGE (V), 1.5 100 TJ = +150 oC VCE = 240V VCE = 480V L = 50µH VCE = 480V 1.0 fMAX1 = 0.05/tD(OFF)I fMAX2 = (PD - PC)/WOFF 10 PC = DUTY FACTOR = 50% R oθJC = 0.5 C/W VGE = 15V, RG = 50Ω0.5 VGE = 10V, RG = 50Ω VGE = 15V, RG = 25Ω TJ = +150oC, VGE = 15V VGE = 10V, RG = 25Ω RG = 25Ω, L = 50µH 0.01110 100 1 10 100 ICE, COLLECTOR-EMITTER CURRENT (A)ICE, COLLECTOR-EMITTER CURRENT (A) NOTE: PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION FIGURE 9. TURN-OFF DELAY vs COLLECTOR-EMITTER FIGURE 10. OPERATING FREQUENCY vs COLLECTOR- CURRENT EMITTER CURRENT AND VOLTAGE

Operating Frequency Information

Operating frequency information for a typical device (Figure frequency limiting condition for an application other than 10) is presented as a guide for estimating device performance TJMAX. tD(OFF)I is important when controlling output ripple for a specific application. Other typical frequency vs collector under a lightly loaded condition. current (ICE) plots are possible using the information shown for a typical unit in Figures 7, 8 and 9. The operating fMAX2 is defined by fMAX2 = (PD - PC)/WOFF. The allowable frequency plot (Figure 10) of a typical device shows f or dissipation (PD) is defined by PD = (TJMAX - TC)/RθJC. TheMAX1 fMAX2 whichever is smaller at each point. The information is sum of device switching and conduction losses must not based on measurements of a typical device and is bounded exceed PD. A 50% duty factor was used (Figure 10) so that by the maximum rated junction temperature. the conduction losses (PC) can be approximated by PC = (VCE x ICE)/2. WOFF is defined as the sum of the instanta- fMAX1 is defined by fMAX1 = 0.05/tD(OFF)I. tD(OFF)I deadtime neous power loss starting at the trailing edge of the input (the denominator) has been arbitrarily held to 10% of the on- pulse and ending at the point where the collector current state time for a 50% duty factor. Other definitions are equals zero (ICE - 0A). possible. tD(OFF)I is defined as the time between the 90% point of the trailing edge of the input pulse and the point The switching power loss (Figure 10) is defined as fMAX1 x where the collector current falls to 90% of its maximum WOFF. Turn on switching losses are not included because value. Device turn-off delay can establish an additional they can be greatly influenced by external circuit conditions and components. 3-119 tD(OFF)I, TURN-OFF DELAY (µs) fOP, OPERATING FREQUENCY (KHz)]
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