Download: FETs, IPD, IGBTs, GaAs MMICs GaAs MMICs
FETs, IPD, IGBTs, GaAs MMICs GaAs MMICs GaAs MMICs for Mobile Communication Use Block Part No. Functions RF Characteristics (typ.) Applications Package No. Single-chip front end CG: 20 dB GN01087B PHS Mini6-G1 D31 VDD = 3.4 V, IDD = 5.0 mA, f = 1.9 GHz NF: 4.0 dB Gain Controll LNA PG: 15 dB Low- GN01096B CDMAVDD = 2.9 V, IDD = 6.5 mA, f = 0.8 GHz NF: 1.4 dB Noise SMini6-G1 D22 Amp. Through pass switch LNA IIP3: 7.5 dBmGN01121B CDMA VDD = 2.9 V, IDD = 10.0 mA, f = 0.8 GHz NF: 0.9 dB 3-stage LNA with 2-stage Down-mixer CG: 27.5 dB QFN-20JP0304- GN01154B PDC D53 VDD = 2.8 V, IDD = 8.0 mA, f = 0.8...
Author:
เดชเพียร Shared: 8/19/19
Downloads: 54 Views: 744
Content
FETs, IPD, IGBTs, GaAs MMICs GaAs MMICs GaAs MMICs for Mobile Communication Use
Block Part No. Functions RF Characteristics (typ.) Applications Package No. Single-chip front end CG: 20 dB GN01087B PHS Mini6-G1 D31 VDD = 3.4 V, IDD = 5.0 mA, f = 1.9 GHz NF: 4.0 dB Gain Controll LNA PG: 15 dB Low- GN01096B CDMAVDD = 2.9 V, IDD = 6.5 mA, f = 0.8 GHz NF: 1.4 dB Noise SMini6-G1 D22 Amp. Through pass switch LNA IIP3: 7.5 dBmGN01121B CDMA VDD = 2.9 V, IDD = 10.0 mA, f = 0.8 GHz NF: 0.9 dB 3-stage LNA with 2-stage Down-mixer CG: 27.5 dB QFN-20JP0304- GN01154B PDC D53 VDD = 2.8 V, IDD = 8.0 mA, f = 0.8&1.5 GHz NF: 1.6 dB N2 Down-Mixer with local amplifier CG: 13 dB/12 dB GN02029B VDD = 3.0 V, IDD = 4.4 mA, f = 0.8/1.5 GHz OIP3: 10 dBmPDC
2-Input/1-Output Mixer + Lo Amp. CG: 12.5 dB GN02034B VDD = 3.0 V, IDD = 4 mA, f = 0.8 GHz IIP3: 1 dBm Mixer SMini6-G1 D22 Down-Mixer with local amplifier CG: 10 dB GN02037B VDD = 3.0 V, IDD = 7.5 mA, f = 0.8 GHz IIP3: 5.3 dBmCDMA
Down-Mixer with local amplifier CG: 10 dB GN02039B VDD = 3.0 V, IDD = 8.0 mA, f = 0.8 GHz IIP3: 5.8 dBm 2-stage amplifier PG: 25 dB GN01081B PCS ESOF10D-G1 D47 VDD = 3.0 V, IDD = 50.0 mA, f = 1.9 GHz (POUT = 11 dBm) 2-stage Driver amplifier (Matching Circuit Buit-in) GN01105B PG: 30.5 dB PDC VDD = 3.0 V, IDD = 25.0 mA, f = 1.5 GHz 2-stage amplifier with AGC PG: 29 dB GN01106B CDMA VDD = 2.8 V, IDD = 30.0 mA, f = 0.8 GHz DR: 48 dB 1-stage Driver amplifier [Matching Circuit Built- GN01125B in (Input-side, Output-side)] PG: 18 dB Driver VDD = 3.0 V, IDD = 15.0 mA, f = 0.8 GHz SMini6-G1 D22 Amp. 2-stage Driver amplifier with AGC PG: 34 dB GN01140B VDD = 2.8/3.5 V, IDD = 25.0 mA, f = 0.8 GHz DR: 46 dB PDC 1-stage AGC PG: 30 dB GN01157S VDD = 2./3.58 V, IDD = 35.0 mA, f = 1.5 GHz DR: 48 dB 2-stage Driver amplifier with AGC PG: 24 dB GN01165S VDD = 2.8/3.5 V, IDD = 33 mA, f = 1.5 GHz DR: 47 dB 2-stage AGC PG: 24.5 dB (ACLR = − 53 dB)GN01153S W-CDMA ESONF10D-G1 D50 VDD = 2.8 V, IDD = 30 mA, f = 2.0 GHz DR: 47 dB High power SPDT ANT-SW LOSS: 0.2 dB GN04017N CDMA VDD = 3.0 V, IDD = 0.01 mA, f = 0.8 GHz ISOL: 23 dB High power SPDT-SW GN04022N W-CDMA VDD = 3.0 V, IDD = 0.01 mA, f = 2.0 GHz Antenna High power SPDT-SW LOSS: 0.25 dB GN04028N CDMA SMini6-G1 D22 Switch VDD = 3.0 V, IDD = 0.01 mA, f = 0.8 GHz ISOL: 23 dB High power SPDT-SW W-CDMA GN04041N VDD = 3.0 V, IDD = 0.01 mA, f = 2.0 GHz /PCS High power SPDT-SW LOSS: 0.2 dB GN04033N PDC VDD = 3.0 V, IDD = 0.01 mA, f = 0.8/1.8 GHz ISOL: 28 dB]15
Similar documents

SEMICONDUCTORCA3227, CA3246 High-Frequency N-P-N Transistor Arrays For Low- March 1993 Power Applications at Frequencies Up to 1.5GHz Features Description • Gain-Bandwidth Product (fT) > 3GHz The CA3227 and CA3246* consist of five general purpose silicon n-p-n transistors on a common monolithic subs

SEMICONDUCTORCA3146, CA3183 March 1993 High-Voltage Transistor Arrays Features Description • Matched General Purpose Transistors The CA3146A, CA3146, CA3183A, and CA3183* are • V Matched ±5mV Max general purpose high voltage silicon n-p-n transistor arraysBE • Operation from DC to 120MHz (CA3146, A)

SEMICONDUCTORCA3127 March 1993 High Frequency N-P-N Transistor Array Features Description • Gain Bandwidth Product (fT).>1GHz The CA3127* consists of five general purpose silicon n-p-n transistors on a common monolithic substrate. Each of the • Power Gain .30dB (Typ) at 100MHz completely isolated tr

SEMICONDUCTORCA3096 March 1993 N-P-N/P-N-P Transistor Array Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose - Three N-P-N and high voltage silicon transistor arrays. Each array consists of - Two P-N-P five independent transistors (two p-n-

SEMICONDUCTORCA3039 March 1993 Diode Array Features Description • Six Matched Diodes on a Common Substrate The CA3039 consists of six ultra-fast, low capacitance diodes on a common monolithic substrate. Integrated circuit • Excellent Reverse Recovery Time 1ns Typical construction assures excellent s

SEMICONDUCTORCA3018 March 1993 General Purpose Transistor Arrays Features Description • Matched Monolithic General Purpose Transistors The CA3018 and CA3018A consist of four general purpose silicon n-p-n transistors on a common monolithic substrate. • hFE Matched ..±10% Two of the four transistors a

Preferred Device Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and http://onsemi.com remote control, and warning systems where reliability of operation is important. SCRs • Glassivated Surfac

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D088 BZX84 series Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of November 1993 File under Discrete Semiconductors, SC01 FEATURES PINNING • Total power dissipation: PIN DESCRIPTION max. 250 mW 1 anode • Three toler

DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BZX79 series Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION • Total power dissipation: Low-power voltage regulator diodes in hermetically sealed leaded gl

DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BZX55 series Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION • Total power dissipation: Low-power voltage regulator diodes in hermetically sealed leaded gl

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D154 BZX284 series Voltage regulator diodes Product specification 1995 Dec 13 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION • Total power dissipation: Low-power voltage regulator diodes in a small ceramic SMD SOD110 package. max

DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BZW03 series Voltage regulator diodes Product specification 1996 May 14 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION construction. This package is hermetically sealed and fatigue free • Glass