Download: High-Frequency N-P-N Transistor Arrays For Low- Features Description Applications lithic construction of these devices provides close electricaland thermal matching of the five transistors.

SEMICONDUCTORCA3227, CA3246 High-Frequency N-P-N Transistor Arrays For Low- March 1993 Power Applications at Frequencies Up to 1.5GHz Features Description • Gain-Bandwidth Product (fT) > 3GHz The CA3227 and CA3246* consist of five general purpose silicon n-p-n transistors on a common monolithic substrate. • Five Transistors on a Common Substrate Each of the transistors exhibits a value of fT in excess of 3GHz, making them useful from DC to 1.5GHz. The mono- Applications lithic construction of these devices provides close electricaland thermal matching of the five transistors. • VHF Amplifiers ...
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SEMICONDUCTORCA3227, CA3246

High-Frequency N-P-N Transistor Arrays For Low-

March 1993 Power Applications at Frequencies Up to 1.5GHz

Features Description

• Gain-Bandwidth Product (fT) > 3GHz The CA3227 and CA3246* consist of five general purpose silicon n-p-n transistors on a common monolithic substrate. • Five Transistors on a Common Substrate Each of the transistors exhibits a value of fT in excess of 3GHz, making them useful from DC to 1.5GHz. The mono-

Applications lithic construction of these devices provides close electricaland thermal matching of the five transistors.

• VHF Amplifiers * Formerly RCA Development Nos. TA10854 and TA10855, respec- • VHF Mixers tively. • Multifunction Combinations-RF/Mixer/Oscillator

Ordering Information

• IF Converter • IF Amplifiers PART TEMPERATURE NUMBER RANGE PACKAGE • Sense Amplifiers CA3227E -55oC to +125oC 16 Lead Plastic DIP • Synthesizers CA3227M -55oC to +125oC 16 Lead Narrow Body • Synchronous Detectors SOIC o • Cascade Amplifiers CA3227M96 -55 C to +125 oC 16 Lead Narrow Body SOIC * CA3246E -55oC to +125oC 14 Lead Plastic DIP CA3246M -55oC to +125oC 14 Lead SOIC CA3246M96 -55oC to +125oC 14 Lead SOIC * * Denotes Tape and Reel

Pinouts

CA3246 CA3227 (PDIP, SOIC) (PDIP, 150 mil SOIC) TOP VIEW TOP VIEW 1 14 1 16Q1 2 13 SUBSTRATE 2 15Q5 Q1 Q2 3 14 3 12 Q2 Q5 4 13 4 11 SUBSTRATE 5 12 5 10 Q4 6 1169710 Q3 Q3 Q47889CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures. File Number 1345.2 Copyright © Harris Corporation 1993 6-65,

Absolute Maximum Ratings (TA = +25oC) Operating Conditions

Power Dissipation, PD: Operating Temperature Range .-55 oC ≤ TA ≤ +125oC Any one transistor .85mW Storage Temperature Range.-65oC ≤ TA ≤ +150oC Total Package: For T Up To +75oA C .425mW For TA > +75 oC ..Derate Linearly at 6.67mW/oC The following ratings apply for each transistor in the device: Collector-to-Emitter Voltage (VCEO) .8V Collector-to-Base Voltage (VCBO) .12V Collector-to-Substrate Voltage (VCIO) (Note 1) .20V Collector Current (IC) .20mA Junction Temperature .+175oC Junction Temperature (Plastic Package) .+150oC Lead Temperature (Soldering 10 Sec.).+300oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Static Electrical Specifications TA = +25oC LIMITS

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS FOR EACH TRANSISTOR Collector-to-Base Breakdown V(BR)CBO IC = 10µA, IE = 0 12 20 - V Collector-to-Emitter Breakdown V(BR)CEO IC = 1mA, IB = 0 8 10 - V Collector-to-Substrate Breakdown V(BR)CIO IC1 = 10µA, IB = 0, IE = 0 20 - - V Emitter-Cutoff-Current (Note 2) IEBO VEB = 4.5V, IC = 0 - - 10 µA Collector-Cutoff-Current ICEO VCE = 5V, IB = 0 - - 1 µA Collector-Cutoff-Current ICBO VCB = 8V, IE = 0 - - 100 nA DC Forward-Current Transfer Ratio hFE VCE = 6V IC = 10mA - 110 - IC = 1mA 40 150 - IC = 0.1mA - 150 - Base-to-Emitter Voltage VBE VCE = 6V IC = 1mA 0.62 0.71 0.82 V Collector-to-Emitter Saturation VCE SAT IC = 10mA, IB = 1mA - 0.13 0.50 V Voltage Base-to-Emitter Saturation Voltage VBE SAT IC = 10mA, IB = 1mA 0.74 - 0.94 V NOTES: 1. The collector of each transistor of these devices is isolated from the substrate by an integral diode. The substrate (terminal 5/CA3227 and terminal 13/CA3246) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action. 2. On small-geometry, high-frequency transistors, it is very good practice never to take the Emitter Base Junction into reverse break- down. To do so may permanently degrade the hFE. Hence, the use of IEBO rather than V(BR)EBO. These devices are also susceptible to damage by electrostatic discharge and transients in the circuits in which they are used. Moreover, CMOS handling procedures should be employed. 6-66,

Dynamic Electrical Specifications T = +25oA C, 200MHz, Common Emitter, Typical Values Intended Only for Design Guidance TYPICAL

PARAMETER SYMBOL TEST CONDITION VALUES UNITS FOR EACH TRANSISTOR Input Admittance Y11 b11 IC = 1mA, VCE = 5V 4 mmho g11 0.75 mmho Output Admittance Y22 b22 IC = 1mA, VCE = 5V 2.7 mmho g22 0.13 mmho Forward Transfer Admittance Y21 Y21 IC = 1mA, VCE = 5V 29.3 mmho θ21 -33 degrees Reverse Transfer Admittance Y12 Y12 IC = 1mA, VCE = 5V 0.38 mmho θ12 -97 degrees Input Admittance Y11 b11 IC = 10mA, VCE = 5V 4.8 mmho g11 2.85 mmho Output Admittance Y22 b22 IC = 10mA, VCE = 5V 2.75 mmho g22 0.9 mmho Forward Transfer Admittance Y21 Y21 IC = 10mA, VCE = 5V 95 mmho θ21 -62 degrees Reverse Transfer Admittance Y12 Y12 IC = 10mA, VCE = 5V 0.39 mmho θ12 -97 degrees Small Signal Forward Current Transfer Ratio h21 IC = 1mA, VCE = 5V 7.1 IC = 10mA, VCE = 5V 17 TYPICAL CAPACITIES AT 1MHz, THREE-TERMINAL MEASUREMENT Collector-to-Base Capacitance CCB VCB = 6V 0.3 pF Collector-to-Substrate Capacitance CCI VCI = 6V 1.6 pF Collector-to-Emitter Capacitance CCE VCE = 6V 0.4 pF Emitter-to-Base Capacitance CEB VEB = 3V 0.75 pF

Spice Model (Spice 2G.6)

.model NPN + BF = 2.610E + 02 BR = 4.401E + 00 IS = 6.930E - 16 RB = 130.0E + 00 + RC = 1.000E + 01 RE = 7.396E - 01 VA = 6.300E + 01 VB = 2.208E + 00 + IK = 1.000E - 01 ISE = 1.87E - 14 NE = 1.653E + 00 IKR = 1.000E - 02 + ISC = 9.25E - 14 NC = 1.333E + 00 TF = 1.775E - 11 TR = 1.000E - 09 + CJS = 1.800E - 12 CJE = 1.010E - 12 PE = 8.350E - 01 ME = 4.460E - 01 + CJC = 9.100E - 13 PC = 3.850E - 01 MC = 2.740E - 01 KF = 0.000E + 00 + AF = 1.000E + 00 EF = 1.000E + 00 FC = 5.000E - 01 PJS = 5.410E - 01 + MJS = 3.530E - 01 RBM = 30.00 RBV = 100 IRB = 0.00 Please Note: No measurements have been made to model the reverse AC operation (tr is an estimation) 6-67,

Typical Performance Curves

160 3.5 150 VCE = 5V, TA = +25 oC 140 3.0 120 2.5 100 2.0 80 1.5 60 1.0 40 0.5 30 VCE = 6V, TA = +25 oC 0.1 1.0 10 10000510 15 IC (mA) IC (mA) FIGURE 1. hFE vs COLLECTOR CURRENT FIGURE 2. fT vs COLLECTOR CURRENT RSOURCE = 500Ω, VCE = 6V, T oA = +25CRoSOURCE = 1kΩ, VCE = 6V, TA = +25 C 30 30 20 20 100Hz 100Hz 10 10 10kHz 10kHz 100kHz 100kHz 0.01 0.1 1.0 10.0 0.01 0.1 1.0 10.0 IC (mA) IC (mA) FIGURE 3. NOISE FIGURE vs COLLECTOR CURRENT FIGURE 4. NOISE FIGURE vs COLLECTOR CURRENT 1.75 1.50 1.25

CCI

1.00 0.75 CEB 0.50

CCB

0.25012345678910 BIAS VOLTAGE (V) FIGURE 5. CAPACITANCE vs BIAS VOLTAGE 6-68 NOISE FIGURE (dB) hFE CAPACITANCE (pF) NOISE FIGURE (dB) fT (GHz),

Die Characteristics

DIE DIMENSIONS: 46 x 32 mils CA3227 47 x 33 mils CA3246

Metallization Mask Layout

CA3227 (14) (13) (12) (11) (15) (10) (16) (9) (1) (8) (2) (7) (3) (4) (5) (6)

SUBSTRATE

CA3246

SUBSTRATE

(13) (12) (11) (10) (14) (9) (8) (1) (2) (7) (3) (4) (5) (6) 6-69]
15

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