Download: Features Description Applications power applications in the DC through VHF range. (CA3146A

SEMICONDUCTORCA3146, CA3183 March 1993 High-Voltage Transistor Arrays Features Description • Matched General Purpose Transistors The CA3146A, CA3146, CA3183A, and CA3183* are • V Matched ±5mV Max general purpose high voltage silicon n-p-n transistor arraysBE • Operation from DC to 120MHz (CA3146, A) on a common monolithic substrate. • Low Noise Figure: 3.2dB Typ at 1kHz (CA3146, A) Types CA3146A and CA3146 consist of five transistors with • High I : 75mA Max (CA3183, A) two of the transistors connected to form a differentiallyC connected pair. These types are recommended for low Applications p...
Author: เดชเพียร Shared: 8/19/19
Downloads: 12 Views: 133

Content

SEMICONDUCTORCA3146, CA3183 March 1993 High-Voltage Transistor Arrays

Features Description

• Matched General Purpose Transistors The CA3146A, CA3146, CA3183A, and CA3183* are • V Matched ±5mV Max general purpose high voltage silicon n-p-n transistor arraysBE • Operation from DC to 120MHz (CA3146, A) on a common monolithic substrate. • Low Noise Figure: 3.2dB Typ at 1kHz (CA3146, A) Types CA3146A and CA3146 consist of five transistors with • High I : 75mA Max (CA3183, A) two of the transistors connected to form a differentiallyC connected pair. These types are recommended for low

Applications power applications in the DC through VHF range. (CA3146A

• General Use in Signal Processing Systems in DC and CA3146 are high voltage versions of the popular through VHF Range predecessor type CA3046.) • Custom Designed Differential Amplifiers Types CA3183A and CA3183 consist of five high current • Temperature Compensated Amplifiers transistors with independent connections for each transistor. • Lamp and Relay Drivers (CA3183, A) In addition two of these transistors (Q1 and Q2) are matched at low current (i.e. 1mA) for applications where offset • Thyristor Firing (CA3183, A) parameters are of special importance. A special substrate

Ordering Information terminal is also included for greater flexibility in circuitdesign. (CA3183A and CA3183 are high voltage versions of

PART TEMPERATURE the popular predecessor type CA3083.) NUMBER RANGE PACKAGE The types with an “A” suffix are premium versions of their CA3146AE -40oC to +85oC 14 Lead Plastic DIP non-”A” counterparts and feature tighter control of break- CA3146AM -40oC to +85oC 14 Lead SOIC down voltages making them more suitable for higher voltage CA3146AM96 -40oC to +85oC 14 Lead SOIC* applications. CA3146E -40oC to +85oC 14 Lead Plastic DIP For detailed application information, see companion Application CA3146M -40oC to +85oC 14 Lead SOIC Note AN5296 “Application of the CA3018 Integrated Circuit CA3146M96 -40oC to +85oC 14 Lead SOIC* Transistor Array.” CA3183AE -40oC to +85oC 16 Lead Plastic DIP * Formerly Developmental Types Nos. CA3183AM -40oC to +85oC 16 Lead Narrow Body SOIC CA3146A - TA6084 CA3183A - TA6094 o CA3146 - TA6181 CA3183 - TA6183CA3183AM96 -40 C to +85oC 16 Lead Narrow Body SOIC* CA3183E -40oC to +85oC 16 Lead Plastic DIP CA3183M -40oC to +85oC 16 Lead Narrow Body SOIC CA3183M96 -40oC to +85oC 16 Lead Narrow Body SOIC* *Denotes Tape and Reel

Pinouts

CA3146, A (PDIP, SOIC) CA3183, A (PDIP, 150MIL SOIC) TOP VIEW TOP VIEW 1 14 1 16 Q5 2 Q1 13 SUBSTRATE 2 Q1 15 DIFF. 3 Q2 143 12

PAIR

4 Q5 13 4 Q2 11 Q4 SUBSTRATE 5 12 5 10 6 11697Q4 10 7 Q3 8 Q389CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures. File Number 532.2 Copyright © Harris Corporation 1993 6-55,

Absolute Maximum Ratings Operating Conditions

Power Dissipation: (any one transistor) Operating Temperature Range CA3146A, CA3146 ..300mW CA3146A, CA3146, CA3183A, CA3183 .-40oC to +85oC CA3183A, CA3183 ..500mW Storage Temperature Range (all types) .-65oC to +150oC Total Package Up to +55oC (CA3146A, CA3146, CA3183A, CA3183) ..750mW Above +55oC .Derate Linearly 6.67mW/oC (CA3146, A, CA3183, A) The following ratings apply for each transistor in the device: Collector-to-Emitter Voltage (VCEO): CA3146A, CA3183A ..40V CA3146, CA3183 ..30V Collector-to-Base Voltage (VCBO): CA3146A, CA3183A ..50V CA3146, CA3183 ..40V Collector-to-Substrate Voltage (VCIO): (Note 1) CA3146A, CA3183A ..50V CA3146, CA3183 ..40V Emitter-to-Base Voltage (VEBO) all types ..5V Collector Current CA3146A, CA3146 .50mA CA3183 .75mA Base Current (IB) - CA3183A, CA3183.20mA Junction Temperature ..+175oC Junction Temperature (Plastic Package) .+150oC Lead Temperature (Soldering 10 Sec.).+300oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Values Apply For Each Transistor

DIFF. PAIR AT 1mA (NOTE 2) VCEO VCBO VCE SAT AT hFE AT 1mA, PT MAX. IC MAX. (MAX) (MAX) 10mA TYP & VCE = 5V VIO MAX IIO MAX TA RANGE TYPE (mW) (mA) (V) (V) (V) (TYP) (mV) (µA) (OPERATING) VALUES APPLY FOR EACH TRANSISTOR CA3146A 300 50 40 50 0.33 100 ±5 2 -40oC to +85oC CA3146 300 50 30 40 0.33 100 ±5 2 -40oC to +85oC CA3183A 500 75 40 50 0.16 75 ±5 2.5 -40oC to +85oC CA3183 500 75 30 40 0.16 75 ±5 2.5 -40oC to +85oC

Comparison Of Related Predecessor Type with Types in this Data Sheet

VCEO VCBO MIN VCE SAT TYP V

I

BE TYP C MAX CCB TYP CCI TYP CEB TYP TYPE MIN (V) (V) (V) (V) (mA) (pF) (pF) (pF) IC = 10mA IC = 1mA CA3046 15 20 0.23 0.715 50 0.58 2.8 0.6 CA3146A 40 50 0.33 0.730 50 0.37 2.2 0.7 CA3146 30 40 0.33 0.730 50 0.37 2.2 0.7 6-56,

Comparison Of Related Predecessor Type with Types in this Data Sheet (Continued)

V ICEO VCBO MIN VCE SAT TYP VBE TYP C MAX CCB TYP CCI TYP CEB TYP TYPE MIN (V) (V) (V) (V) (mA) (pF) (pF) (pF) IC = 50mA IC = 10mA CA3083 15 20 0.4 0.74 100 - - - CA3183A 40 50 1.7 0.75 75 - - - CA3183 30 40 1.7 0.75 75 - - - NOTES: 1. The collector of each transistor is isolated from the substrate by an integral diode. The substrate must be connected to a voltage which is more negative than any collector voltage in order to maintain isolation between transisters, and to provide for normal transistor action. To avoid undesired coupling between transistors, the substrate terminal should be maintained at either DC or signal (AC) ground. A suitable bypass capacitor can be used to establish a signal ground. 2. Caution on Total Package Power Dissipation: The maximum total package dissipation rating for the CA3146 and CA3183 Series circuits is 750mW at temperatures up to +55oC, then derate linearly at 6.67mW/oC.

Static Electrical Characteristics CA3146 Series

TEST CONDITIONS LIMITS TYP. CA3146A CA3146 CHAR.

CURVE

PARAMETERS SYMBOL TA = +25 oC FIG. NO. MIN TYP MAX MN TYP MAX UNITS For Each Transistor Collector-to-Base Break- V(BR)CBO IC = 10µA, IE = 0 - 50 72 - 40 72 - V down Voltage Collector-to-Emitter V(BR)CEO IC = 1mA, IB = 0 - 40 56 - 30 56 - V Breakdown Voltage Collector-to-Substrate V(BR)CIO ICI = 10µA, IB = 0, - 50 72 - 40 72 - V Breakdown Voltage IE = 0 Emitter-to-Base V(BR)EBO IE = 10µA, IC = 0 - 5 7 - 5 7 - V Breakdown Voltage Collector-Cutoff Current ICEO VCE = 10V, IB = 0 2 - See 5 - See 5 µA Curve Curve Collector-Cutoff Current ICBO VCB = 10V, IE = 0 3 - 0.002 100 - 0.002 100 nA DC Forward-Current hFE VCE = 5V IC = 10mA 4 - 85 - - 85 - - Transfer Ratio VCE = 5V IC = 1mA 4 30 100 - 30 100 - - VCE = 5V IC = 10µA 4 - 90 - - 90 - - Base-to-Emitter VBE VCE = 3V, IC = 1mA 5 0.63 0.73 0.83 0.63 0.73 0.83 V Voltage Collector-to-Emitter Sat- VCE SAT IC = 10mA, IB = 1mA 6 - 0.33 - - 0.33 - V uration Voltage For transistors Q3 and Q4 (Darlington Configuration): Base-to-Emitter VBE VCE = 5V IE = 10mA 8 - 1.46 - - 1.46 - V (Q3 to Q4) VCE=5V IE = 1mA 8, 9 - 1.32 - - 1.32 - V Magnitude of Base-to- ∆V VCE = 5V, I oE = 1mA - - 4.4 - - 4.4 - mV/ C Emitter Temperature Co- BE efficient ∆T 6-57,

Static Electrical Characteristics CA3146 Series (Continued)

TEST CONDITIONS LIMITS TYP. CA3146A CA3146 CHAR.

CURVE

PARAMETERS SYMBOL TA = +25 oC FIG. NO. MIN TYP MAX MN TYP MAX UNITS For transistors Q1 and Q2 (As a Differential Amplifier): Magnitude of Input |VIO| VCE = 5V, IE = 1mA 10, 11 - 0.48 5 - 0.48 5 mV Offset Voltage |VBE1 - VBE2| Magnitude of Base-to- ∆V VCE = 5V, IE = 1mA - - 1.9 - - 1.9 - mV/oC Emitter Temperature Co- BE efficient ∆T Magnitude of VIO ∆V VCE = 5V, - - 1.1 - - 1.1 - µV/ oC (VBE1 - V )

IO

BE2 IC1 = IC2 = 1mA Temperature ∆T Coefficient Magnitude CA3146AE IIO VCE = 5V, 12 - 0.3 2 - 0.3 2 µA of Input Off- and IC1 = IC2 = 1mA set Current CA3146E |IIO1 - IIO2| Only

Dynamic Electrical Characteristics CA3146 Series

TEST CONDITIONS LIMITS TYP. CA3146A CA3146 CHAR.

CURVE

FIG. PARAMETERS SYMBOL TA = +25 oC NO. MIN TYP MAX MIN TYP MAX UNITS Low Frequency Noise NF f = 1kHz,VCE = 5V, 14 - 3.25 - - 3.25 - dB Figure IC = 100µA, Source resistance = 1kΩ Low-Frequency, Small-Signal Equivalent- Circuit Characteristics: Forward-Current hFE f = 1kHz, VCE = 5V, 16 - 100 - - 100 - - Transfer Ratio IC = 1mA Short-Circuit Input hIE f = 1kHz, VCE = 5V, 16 - 2.7 - - 3.5 - kΩ Impedance IC = 1mA Open-Circuit Output hOE f = 1kHz, VCE = 5V, 16 - 15.6 - - 15.6 - µmho Impedance IC = 1mA Open-Circuit Reverse hRE f = 1kHz, VCE = 5V, 16 - 1.8 x - - 1.8 x - - Voltage Transfer Ratio IC = 1mA 10 -4 10-4 Admittance Characteristics: Forward Transfer YFE f = 1MHz, VCE = 5V, 17 - 31- - - 31- - Admittance IC = 1 mA j1.5 j1.5 mmho Input Admittance YIE f = 1MHz, VCE = 5V, 18 - 0.35 + - - 0.3 + - mmho IC = 1 mA j0.04 j0.04 Output Admittance YOE f = 1MHz, VCE = 5V, 19 - 0.001 - - 0.001 - mmho IC = 1 mA + + j0.03 j0.03 Reverse Transfer YRE f = 1MHz, VCE = 5V, 20 See See mmho Admittance IC = 1 mA Curve Curve 6-58,

Dynamic Electrical Characteristics CA3146 Series (Continued)

TEST CONDITIONS LIMITS TYP. CA3146A CA3146 CHAR.

CURVE

FIG. PARAMETERS SYMBOL T oA = +25 C NO. MIN TYP MAX MIN TYP MAX UNITS Gain-Bandwidth Product fT VCE = 5V, IC = 3mA 21 300 500 - 300 500 - MHz Emitter-to-Base CEB VEB = 5V, IE = 0 22 - 0.70 - - 0.70 - pF Capacitance Collector-to-Base CCB VCB = 5V, IC = 0 22 - 0.37 - - 0.37 - pF Capacitance Collector-to-Substrate CCl VCl = 5V, IC = 0 22 - 2.2 - - 2.2 - pF Capacitance

Static Electrical Characteristics CA3183 Series

TEST CONDITIONS LIMITS TYP. CA3183A CA3183

CHAR CURVE

FIG. PARAMETERS SYMBOL TA = +25 oC NO. MIN TYP MAX MIN TYP MAX UNITS For Each Transistor: Collector-to-Base V(BR)CBO IC = 100µA, IE = 0 - 50 - - 40 - - V Breakdown Voltage Collector-to-Emitter V(BR)CEO IC = 1mA, IB = 0 - 40 - - 30 - - V Breakdown Voltage Collector-to-Substrate V(BR)ClO ICI = 100µA, IB = 0, - 50 - - 40 - - V Breakdown Voltage IE = 0 Emitter-to-Base V(BR)EBO IE = 500µA, IC = 0 - 5 - - 5 - - V Breakdown Voltage Collector-Cutoff Current ICEO VCE = 10V, IB = 0 23 - - 10 - - 10 µA Collector-Cutoff Current ICBO VCB = 10V, IE = 0 24 - - 1 - - 1 µA DC Forward-Current hFE VCE = 3V, IC = 10mA 25, 26 40 - - 40 - - - Transfer Ratio VCE = 5V, IC = 50mA - 40 - - 40 - - - Base-to-Emitter Voltage VBE VCE = 3V, IC = 10mA 27 0.65 0.75 0.85 0.65 0.75 0.85 V Collector-to-Emitter VCE SAT IC = 50mA, IB = 5mA 28 - 1.7 3.0 - 1.7 3.0 V Saturation Voltage (Note 1) For Transistors Q1 and Q2 (As a Differential Amplifier): Absolute Input Offset |VIO| VCE = 3V, IC = 1mA 29 - 0.47 5 - 0.47 5 mV Voltage Absolute Input Offset |IIO| VCE = 3V, IC = 1mA 30 - 0.78 2.5 - 0.78 2.5 µA Current NOTE: 1. A maximum dissipation of 5 transistors x 150mW = 750mW is possible for a particular application. 6-59,

Typical Performance Curves Static Characteristics - CA3146 Series

103 102 IB = 02I= 010 10 E VCE = 10V 10 V1 CB = 15 VCE = 5V 1 10-1 VCB = 10 10-1 10-2 VCB = 5 10-2 10-3 10-3 10-4 0 25 50 75 100 125 0 25 50 75 100 125 TEMPERATURE (oC) TEMPERATURE (oC) FIGURE 1. ICEO vs TEMPERATURE FOR ANY TRANSISTOR FIGURE 2. ICBO vs TEMPERATURE FOR ANY TRANSISTOR 160 VCE = 5V VCE = 5V 140 TA = +125 oC 0.9 120 IE =3mA 0.8 +25oC 0.7 0.6 I = 1mA 60 E -55oC 0.5 20 0.4 0.01 0.1 1 10 -75 -50 -25 0 25 50 75 100 125 o COLLECTOR CURRENT (mA) TEMPERATURE ( C) FIGURE 3. hFE vs IC FOR ANY TRANSISTOR FIGURE 4. VBE vs TEMPERATURE FOR ANY TRANSISTOR T = +25oA C VCE = 5V 1.50 4 IE = 10mA 1.25 3 1.0 2 hFE = 10 0.75 0.75 IE = 1mA 0.50 0.50 0.25 0.25 IE = 0.1mA 0 10 20 30 40 -75 -50 -25 0 25 50 75 100 125 COLLECTOR CURRENT (mA) TEMPERATURE (oC) FIGURE 5. VCE SAT vs IC FOR ANY TRANSISTOR FIGURE 6. VIO vs TEMPERATURE FOR Q1 AND Q2 6-60 COLLECTOR TO EMITTER SATURATION VOLTAGE (V) DC FORWARD CURRENT TRANSFER RATIO COLLECTOR CUTOFF CURRENT (nA) OFFSET VOLTAGE (mV) BASE-TO-EMITTER VOLTAGE (V) COLLECTOR CUTOFF CURRENT (nA),

CA3146, CA3146A, CA3183, CA3183A Typical Performance Curves Static Characteristics - CA3146 Series (Continued)

0.8 10 VCE = 5V VCE = 5V TA = +25 oC TA = +25 oC 0.7 3 1.0 0.6 2 0.1 0.5 1 |VBE1 - VBE2| 0.4 0 0.01 0.01 0.1 1.0 10 0.01 0.1 1.0 10 COLLECTOR CURRENT (mA) EMITTER CURRENT (mA) FIGURE 7. VBE AND VIO vs IE FOR Q1 AND Q2 FIGURE 8. IIO vs IC (Q1 AND Q2) FOR TYPES CA3146A AND CA3146

Typical Performance Curves Dynamic Characteristics (for any transistor) - CA3146 Series

VCE = 5V VCE = 5V RS = 500Ω RS = 1000Ω 20 TA = +25 oC T o20 A = +25Cf= 0.1kHz f = 0.1kHz 15 15 f = 1kHz f = 1kHz 10 10 f = 10kHz f = 10kHz55000.01 0.1 1.0 0.01 0.1 1.0 COLLECTOR CURRENT (mA) COLLECTOR CURRENT (mA) FIGURE 9. NF vs IC AT RS = 500Ω FIGURE 10. NF vs IC AT RS = 1kΩ 30 100 VCE = 5V VCE = 5V f = 1kHz 25 RS = 10000Ω TA = +25 oC hFE = 100 hOE TA = +25 oC hIE = 2.7kΩ AT hRE = 1.88 x 10 -4 1mA h 20 10 OE = 15.6µmho f = 0.1kHz 15 f = 1kHz 10 f = 10kHz h1.0 FE 5 hRE hIE 0 0.1 0.01 0.1 1.0 0.01 0.1 1.0 10 COLLECTOR CURRENT (mA) COLLECTOR CURRENT (mA) FIGURE 11. NF vs IC AT RS = 10kΩ FIGURE 12. hFE, hIE, hOE, hRE vs IC 6-61 NOISE FIGURE (dB) NOISE FIGURE (dB) BASE TO EMITTER VOLTAGE (V) INPUT OFFSET VOLTAGE Q1 AND Q2 (mV) NORMALIZED h PARAMETERS NOISE FIGURE (dB) INPUT OFFSET CURRENT (µA),

CA3146, CA3146A, CA3183, CA3183A Typical Performance Curves Dynamic Characteristics (for any transistor) - CA3146 Series (Continued)

COMMON EMITTER CIRCUIT, BASE INPUT 6 COMMON EMITTER CIRCUIT, BASE INPUT TA = +25 oC, VCE = 5V, IC = 1mA40 TA = +25 oC, VCE = 5V, IC = 1mA 20 gFE 3 bIE02-10 bFE 1 gIE -20 0 0.1 1.0 10 100 0.1 1.0 10 100 FREQUENCY (MHz) FREQUENCY (MHz) FIGURE 13. yFE vs FREQUENCY FIGURE 14. yIE vs FREQUENCY COMMON EMITTER CIRCUIT, BASE INPUT COMMON EMITTER CIRCUIT, BASE INPUT T = +25oA C, VCE = 3V, IC = 1mA TA = +25 oC, VCE = 5V, IC = 1mA 5 gRE IS SMALL AT FREQUENCIES LESS THAN 500MHz 4 bOE -0.5 bRE -1.0 1 -1.5 gOE 0 -2.0 0.1 1.0 10 100 1 10 100 FREQUENCY (MHz) FREQUENCY (MHz) FIGURE 15. yOE vs FREQUENCY FIGURE 16. yRE vs FREQUENCY VCE = 5V TA = +25 oC TA = +25 oC 800 4 600 3 400 2 CCI 200 1

CEB

100 CCB012345678910 11 12 13 14012345678910 11 12 13 14 COLLECTOR CURRENT (mA) BIAS VOLTAGE (V) FIGURE 17. fT vs IC FIGURE 18. CEB, CCB, CCI vs BIAS VOLTAGE 6-62 GAIN BANDWIDTH PRODUCT (MHz) OUTPUT CONDUCTANCE (gOE) FORWARD TRANSFER CONDUCTANCE (gFE) OR SUSCEPTANCE (bOE) (mmho) OR SUSCEPTANCE (bFE) (mmho) CAPACITANCE (pF) REVERSE TRANSFER CONDUCTANCE (gRE) INPUT CONDUCTANCE (gIE) OR SUSCEPTANCE (bRE) (mmho) OR SUSCEPTANCE (bIE) (mmho),

CA3146, CA3146A, CA3183, CA3183A Typical Performance Curves Static Characteristics - CA3183 Series

10-1 1 VCE = 10V VCB = 10V 10-1 10-2 10-2 10-3 10-3 -4 10-410 -50 -25 0 25 50 75 100 -50 -25 0 25 50 75 100 TEMPERATURE (oC) TEMPERATURE (oC) FIGURE 19. ICEO vs TEMPERATURE FOR ANY TRANSISTOR FIGURE 20. ICBO vs TEMPERATURE FOR ANY TRANSISTOR VCE = 3V TA = +25 oC 100 VCE = 10V 125 90 100 80 75 70 IC = 0.1mA VCE = 3V 50 IC = 1mA 60 IC = 10mA 25 50 -50 -25 0 25 50 75 100 40 0.1 1.0 10 TEMPERATURE (oC) COLLECTOR CURRENT (mA) FIGURE 21. hFE vs TEMPERATURE FOR ANY TRANSISTOR FIGURE 22. hFE vs IC FOR ANY TRANSISTOR T oA = +25 C 0.9 h = 10 TA = 0 oC FE o 0.8 TA = +25 C TA = +70 oC 1.0 0.7 0.6 0.5 0.4 0.3 0.1 0.1 1.0 10 10 100 COLLECTOR CURRENT (mA) COLLECTOR CURRENT (mA) FIGURE 23. VBE vs IC FOR ANY TRANSISTOR FIGURE 24. VCE SAT vs IC FOR ANY TRANSISTOR 6-63 BASE TO EMITTER VOLTAGE (V) DC FORWARD CURRENT TRANSFER RATIO (hFE) COLLECTOR CUTOFF CURRENT (nA) COLLECTOR TO EMITTER DC FORWARD CURRENT TRANSFER RATIO (hFE) COLLECTOR CUTOFF CURRENT (nA)SATURATION VOLTAGE (V),

CA3146, CA3146A, CA3183, CA3183A Typical Performance Curves Static Characteristics - CA3183 Series (Continued)

VCE = 3V VCE = 3VTA = +25 oC TA = 0 oC 1.0 TA = +25 oC 1.0 TA = +70 oC 0.1 0.1 0.1 1.0 10 0.1 1.0 10 COLLECTOR CURRENT (mA) COLLECTOR CURRENT (mA) FIGURE 25. |VIO| vs IC FOR DIFFERENTIAL AMPLIFIER (Q1 AND Q2) FIGURE 26. |IIO| vs IC FOR DIFFERENTIAL AMPLIFIER (Q1 AND Q2) 6-64 ABSOLUTE INPUT - OFFSET VOLTAGE (mV) ABSOLUTE INPUT - OFFSET CURRENT (µA)]
15

Similar documents

Features Description Applications bility. The monolithic construction of the CA3127 provides
SEMICONDUCTORCA3127 March 1993 High Frequency N-P-N Transistor Array Features Description • Gain Bandwidth Product (fT).>1GHz The CA3127* consists of five general purpose silicon n-p-n transistors on a common monolithic substrate. Each of the • Power Gain .30dB (Typ) at 100MHz completely isolated tr
Applications Description
SEMICONDUCTORCA3096 March 1993 N-P-N/P-N-P Transistor Array Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose - Three N-P-N and high voltage silicon transistor arrays. Each array consists of - Two P-N-P five independent transistors (two p-n-
General Purpose N-P-N Features Description Applications Ordering Information
SEMICONDUCTORCA3045, CA3046 General Purpose N-P-N Mayrc 1h9 199493 Transistor Arrays Features Description • Two Matched Transistors: VBE Matched ±5mV; Input The CA3045 and CA3046 each consist of five general Offset Current 2µA Max at IC = 1mA purpose silicon n-p-n transistors on a common monolithic
Features Description Applications For applications such as balanced modulators or ring modu-
SEMICONDUCTORCA3039 March 1993 Diode Array Features Description • Six Matched Diodes on a Common Substrate The CA3039 consists of six ultra-fast, low capacitance diodes on a common monolithic substrate. Integrated circuit • Excellent Reverse Recovery Time 1ns Typical construction assures excellent s
Features Description
SEMICONDUCTORCA3018 March 1993 General Purpose Transistor Arrays Features Description • Matched Monolithic General Purpose Transistors The CA3018 and CA3018A consist of four general purpose silicon n-p-n transistors on a common monolithic substrate. • hFE Matched ..±10% Two of the four transistors a
Reverse Blocking Thyristors • Glassivated Surface for Reliability and Uniformity 4 AMPERES RMS • Power Rated at Economical Prices 200 thru 600 VOLTS
Preferred Device Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and http://onsemi.com remote control, and warning systems where reliability of operation is important. SCRs • Glassivated Surfac
DISCRETE SEMICONDUCTORS DATA SHEET BZX84 series Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of November 1993 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D088 BZX84 series Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of November 1993 File under Discrete Semiconductors, SC01 FEATURES PINNING • Total power dissipation: PIN DESCRIPTION max. 250 mW 1 anode • Three toler
DISCRETE SEMICONDUCTORS DATA SHEET BZX79 series Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of April 1992 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BZX79 series Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION • Total power dissipation: Low-power voltage regulator diodes in hermetically sealed leaded gl
DISCRETE SEMICONDUCTORS DATA SHEET BZX55 series Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of April 1992 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BZX55 series Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION • Total power dissipation: Low-power voltage regulator diodes in hermetically sealed leaded gl
DISCRETE SEMICONDUCTORS DATA SHEET BZX284 series Voltage regulator diodes Product specification 1995 Dec 13 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D154 BZX284 series Voltage regulator diodes Product specification 1995 Dec 13 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION • Total power dissipation: Low-power voltage regulator diodes in a small ceramic SMD SOD110 package. max
DISCRETE SEMICONDUCTORS DATA SHEET BZW03 series Voltage regulator diodes Product specification 1996 May 14 Supersedes data of April 1992 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BZW03 series Voltage regulator diodes Product specification 1996 May 14 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION construction. This package is hermetically sealed and fatigue free • Glass
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR6040/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR6040/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: Motorola Preferred Device • Ultrafast 100 Nanosecond Recovery Time • 175°C Operating Juncti
Order this document   For Use As A Damper Diode Motorola Preferred Device In High and Very High Resolution Monitors
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR5150E/D For Use As A Damper Diode Motorola Preferred Device In High and Very High Resolution Monitors SCANSWITCH The MUR5150E is a state-of-the-art Ultrafast Power Rectifier specifically RECTIFIER designed for use as a damper diode in horizont
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR490E/D  Ultrafast “E’’ Series with High Reverse Energy Capability
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR490E/D Ultrafast “E’’ Series with High Reverse Energy Capability MUR4100E is a .designed for use in switching power supplies, inverters and as Motorola Preferred Device free wheeling diodes, these state–of–the–art devices have the following fea
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR420/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR420/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • ° MUR420 and MUR460 are175 C Operating
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR3080/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR3080/D Motorola Preferred Device .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 75 ns (Typ) Soft Recovery Time • 175°C Operating Junc
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR3040/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR3040/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: Motorola Preferred Device • Ultrafast 100 Nanosecond Recovery Time • 175°C Operating Juncti
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR3020WT/D  .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features:
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR3020WT/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 and 60 Nanosecond Recovery Time • 175°C Operating Junction Temperature Mot
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR3020PT/D  .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features:
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR3020PT/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 and 60 Nanosecond Recovery Time *Motorola Preferred Devices • 175°C Operat
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR190E/D  Ultrafast “E’’ Series with High Reverse Energy Capability
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR190E/D Ultrafast “E’’ Series with High Reverse Energy Capability .designed for use in switching power supplies, inverters and as MUR1100E is a free wheeling diodes, these state–of–the–art devices have the Motorola Preferred Device following fea
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR1620CTR/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR1620CTR/D .designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Motorola Preferred Device Rectifiers, makes a single phase full–wave bridge. T
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR1620CT/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR1620CT/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 and 60 Nanosecond Recovery Times • 175°C Operating Junction Temperature Mo
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR1520/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR1520/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 and 60 Nanosecond Recovery Time Motorola Preferred Devices • 175°C Operating
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR120/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR120/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • 175°C Operating Junction Temperature M
Order this document   For Use As A Damper Diode Motorola Preferred Device In High and Very High Resolution Monitors
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR10150E/D For Use As A Damper Diode Motorola Preferred Device In High and Very High Resolution Monitors The MUR10150E is a state-of-the-art Power Rectifier specifically designed for use as a SCANSWITCH damper diode in horizontal deflection circ
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR10120E/D  For High and Very High Resolution Monitors
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR10120E/D For High and Very High Resolution Monitors This state–of–the–art power rectifier is specifically designed for Motorola Preferred Device use as a damper diode in horizontal deflection circuits for high and very high resolution monitors.
Order this document SEMICONDUCTOR TECHNICAL DATA by MSRB860–1/D  D2PAK–SL Straight Lead
Order this document SEMICONDUCTOR TECHNICAL DATA by MSRB860–1/D D2PAK–SL Straight Lead SOFT RECOVERY Designed for use as free wheeling diodes in variable speed motor control POWER RECTIFIER applications and other average frequency switching power supplies. These 8.0 AMPERES state–of–the–art devices
Order this document SEMICONDUCTOR TECHNICAL DATA by MSR860/D  Plastic TO–220 Package
Order this document SEMICONDUCTOR TECHNICAL DATA by MSR860/D Plastic TO–220 Package Designed for use as free wheeling diodes in variable speed motor control applications and other average frequency switching power supplies. These SOFT RECOVERY state–of–the–art devices have the following features: P
Order this document SEMICONDUCTOR TECHNICAL DATA by MRS1504T3/D SMB Power Surface Mount Package
Order this document SEMICONDUCTOR TECHNICAL DATA by MRS1504T3/D SMB Power Surface Mount Package Features mesa epitaxial construction with glass passivation. STANDARD RECOVERY Ideally suited for high frequency switching power supplies; free RECTIFIER wheeling diodes and polarity protection diodes. 1.
Order this document SEMICONDUCTOR TECHNICAL DATA by MR850/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MR850/D Axial lead mounted fast recovery power rectifiers are designed for special applications such as dc power supplies, inverters, converters, ultrasonic systems, choppers, low RF interference and free wheeling diodes. A complete line of fast re