Download: Features Description Applications bility. The monolithic construction of the CA3127 provides

SEMICONDUCTORCA3127 March 1993 High Frequency N-P-N Transistor Array Features Description • Gain Bandwidth Product (fT).>1GHz The CA3127* consists of five general purpose silicon n-p-n transistors on a common monolithic substrate. Each of the • Power Gain .30dB (Typ) at 100MHz completely isolated transistors exhibits low 1/f noise and a • Noise Figure .3.5dB (Typ) at 100MHz value of fT in excess of 1GHz, making the CA3127 useful from DC to 500MHz. Access is provided to each of the termi- • Five Independent Transistors on a Common Substrate nals for the individual transistors and a separate sub...
Author: เดชเพียร Shared: 8/19/19
Downloads: 917 Views: 1909

Content

SEMICONDUCTORCA3127 March 1993 High Frequency N-P-N Transistor Array

Features Description

• Gain Bandwidth Product (fT).>1GHz The CA3127* consists of five general purpose silicon n-p-n transistors on a common monolithic substrate. Each of the • Power Gain .30dB (Typ) at 100MHz completely isolated transistors exhibits low 1/f noise and a • Noise Figure .3.5dB (Typ) at 100MHz value of fT in excess of 1GHz, making the CA3127 useful from DC to 500MHz. Access is provided to each of the termi- • Five Independent Transistors on a Common Substrate nals for the individual transistors and a separate substrate connection has been provided for maximum application flexi-

Applications bility. The monolithic construction of the CA3127 provides

close electrical and thermal matching of the five transistors. • VHF Amplifiers * Formerly Development Number TA6206. • Multifunction Combinations - RF/Mixer/Oscillator • Sense Amplifiers Ordering Information • Synchronous Detectors PART TEMPERATURE • VHF Mixers NUMBER RANGE PACKAGE • IF Converter CA3127E -55oC to +125oC 16 Lead Plastic DIP • IF Amplifiers CA3127F -55oC to +125oC 16 Lead Ceramic DIP • Synthesizers CA3127M -55oC to +125oC 16 Lead Narrow Body SOIC • Cascade Amplifiers CA3127M96 -55oC to +125oC 16 Lead Narrow Body SOIC* * Denotes Tape and Reel.

Pinout

CA3127 (PDIP, CDIP, 150MIL SOIC) TOP VIEW 1 16 Q1 2 15 Q2 3 14 4 13 Q5 SUBSTRATE 5 12 6 11 Q3 Q4 7 1089CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures. File Number 662.2 Copyright © Harris Corporation 1993 6-46,

Specifications CA3127 Absolute Maximum Ratings Operating Conditions

Power Dissipation, PD Operating Temperature Range .-55 oC to +125oC Any One Transistor .85mW Storage Temperature Range.-65oC to +150oC Total Package For TA Up to +75 oC .425mW For T oA > +75 C ..Derate Linearly at 6.67mW/ oC The following ratings apply for each transistor in the device Collector-to-Emitter Voltage, VCEO .15V Collector-to-Base Voltage, VCBO.20V Collector-to-Substrate Voltage, VCIO (Note 1).20V Collector Current, IC .20mA Junction Temperature .+175oC Junction Temperature (Plastic Packages) .+150oC Lead Temperature (Soldering 10 Sec.).+300oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Electrical Specifications TA = +25oC LIMITS

PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS DC SPECIFICATIONS (For Each Transistor) Collector-to-Base Breakdown Voltage IC = 10µA, IE = 0 20 32 - V Collector-to-Emitter Breakdown Voltage IC = 1mA, IB = 0 15 24 - V Collector-to-Substrate Breakdown-Voltage IC1 = 10µA, IB = 0, IE = 0 20 60 - V Emitter-to-Base Breakdown Voltage (Note 2) IE = 10µA, IC = 0 4 5.7 - V Collector-Cutoff-Current VCE = 10V IB = 0 - - 0.5 µA Collector-Cutoff-Current VCB = 10V, IE = 0 - - 40 nA DC Forward-Current Transfer Ratio VCE = 6V IC = 5mA 35 88 - IC = 1mA 40 90 - IC = 0.1mA 35 85 - Base-to-Emitter Voltage VCE = 6V IC = 5mA 0.71 0.81 0.91 V IC = 1mA 0.66 0.76 0.86 V IC = 0.1mA 0.60 0.70 0.80 V Collector-to-Emitter Saturation Voltage IC = 10mA, IB = 1mA - 0.26 0.50 V Magnitude of Difference in VBE Q1 & Q2 Matched - 0.5 5 mV Magnitude of Difference in I VCE = 6V, IC = 1mAB - 0.2 3 µA SWITCHING SPECIFICATIONS Noise Figure f = 100kHz, RS = 500Ω, IC = 1mA - 2.2 - dB Gain-Bandwidth Product VCE = 6V, IC = 5mA - 1.15 - GHz Collector-to-Base Capacitance VCB = 6V, f = 1MHz - See - pF Collector-to-Substrate Capacitance VCI = 6V, f = 1MHz - Fig. 5 - pF Emitter-to-Base Capacitance VBE = 4V, f = 1MHz - - pF Voltage Gain VCE = 6V, f = 10MHz, RL = 1kΩ, IC = 1mA - 28 - dB Power Gain Cascode Configuration 27 30 - dB Noise Figure f = 100MHz, V+ = 12V, IC = 1mA - 3.5 - dB Input Resistance Common-Emitter Configuration - 400 - Ω Output Resistance VCE = 6V, IC = 1mA, f = 200 MHz - 4.6 - kΩ Input Capacitance - 3.7 - pF Output Capacitance - 2 - pF Magnitude of Forward Transadmittance - 24 - mmho NOTE: 1. The collector of each transistor of the CA3127 is isolated from the substrate by an integral diode. The substrate (terminal 5) must be con- nected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action. 2. When used as a zener for reference voltage, the device must not be subjected to more than 0.1mJ of energy from any possible capacitance or electrostatic discharge in order to prevent degradation of the junction. Maximum operating zener current should be less than 10mA. 6-47,

Typical Performance Curves

oC of = 10Hz TA = +25Cf= 10Hz 30 VCE = 6V VCE = 6V30 f = 100HzRSOURCE = 500Ω RSOURCE = 1kΩ f = 100Hz 20 20 f = 1kHz f = 10kHz f = 1kHz 10 f = 10kHz 10 f = 100kHz f = 100kHz000.01 0.1 1.0 0.01 0.1 1.0 COLLECTOR CURRENT (mA) COLLECTOR CURRENT (mA) FIGURE 1. NOISE FIGURE vs COLLECTOR CURRENT AT FIGURE 2. NOISE FIGURE vs COLLECTOR CURRENT AT RSOURCE = 500Ω RSOURCE = 1kΩ TA = +25 oC 1.0 VCE = 6V TA = -55 oC 0.9 1.2 TA = +25 oC 0.8 1.1 0.7 T oA = +125 C 1.0 0.6 0.9 0.5 0.8 0.4012345678910 0.1 1 10 COLLECTOR CURRENT (mA) COLLECTOR CURRENT (mA) FIGURE 3. GAIN-BANDWIDTH PRODUCT vs COLLECTOR FIGURE 4. BASE-TO-EMITTER VOLTAGE vs COLLECTOR CURRENT CURRENT T = +25oA C CAPACITANCE (pF) f = 1MHz CCB CCE CEB CCI TRAN- 2.25 SISTOR PKG TOTAL PKG TOTAL PKG TOTAL PKG TOTAL 2.00 BIAS - 6V - 6V - 4V - 6V 1.75 CCI (V) 1.50 1.25 Q1 0.025 0.190 0.090 0.125 0.365 0.610 0.475 1.65 1.00 Q2 0.015 0.170 0.225 0.265 0.130 0.360 0.085 1.35 0.75 C Q3 0.040 0.200 0.215 0.240 0.360 0.625 0.210 1.40 0.50 EB 0.25 CCB Q4 0.040 0.190 0.225 0.270 0.365 0.610 0.085 1.25 Q5 0.010 0.165 0.095 0.115 0.140 0.365 0.090 1.35012345678910 BIAS VOLTAGE (V) FIGURE 5A. CAPACITANCE vs BIAS VOLTAGE FOR Q2 FIGURE 5B. TYPICAL CAPACITANCE VALUES AT f = 1MHz. THREE TERMINAL MEASUREMENT. GUARD ALL TERMINALS EXCEPT THOSE UNDER TEST. 6-48 CAPACITANCE (pF) GAIN-BANDWIDTH PRODUCT (GHz) NOISE FIGURE (dB) BASE-TO-EMITTER VOLTAGE (V) NOISE FIGURE (dB), 40 40 oC, VCE = 6V, RL = 100Ω IC = 5mA 35 FOR TEST CIRCUIT SEE FIGURE 19 35 30 30 IC = 1mA 25 25 IC = 0.5mA IC = 5mA 20 20 IC = 0.2mA 15 IC = 1mA 10 10 IC = 0.5mA550IC = 0.2mA0o-5 -5 TA = +25 C, VCE = 6V, RL = 1kΩ FOR TEST CIRCUIT SEE FIGURE 19 -10 -10 1 10 100 1000 1 10 100 1000 FREQUENCY (MHz) FREQUENCY (MHz) FIGURE 6. VOLTAGE GAIN vs FREQUENCY AT RL = 100Ω FIGURE 7. VOLTAGE GAIN vs FREQUENCY AT RL = 1kΩ TA = +25 oC TA = +25 oC, VCE = 6V, IC = 1mA VCE = 6V 8 b11 80 6 70 g11 60 3 40 0 0.1 1.0 10 100 1000 COLLECTOR CURRENT (mA) FREQUENCY (MHz) FIGURE 8. DC FORWARD-CURRENT TRANSFER RATIO (hFE) FIGURE 9. INPUT ADMITTANCE (Y11) vs FREQUENCY vs COLLECTOR CURRENT 1.3 T = +25oC 1.2 TA = +25 oC

A

VCE = 6V VCE = 6V1.1 f = 200MHz IC = 1mA 1.0 0.9 8 g11 0.8 b22 87 0.7 7 0.665b11 0.5540.4430.3320.2 g22210.11000012345678910 100 1000 COLLECTOR CURRENT (mA) FREQUENCY (MHz) FIGURE 10. INPUT ADMITTANCE (Y11) vs COLLECTOR FIGURE 11. OUTPUT ADMITTANCE (Y22) vs FREQUENCY

CURRENT

6-49 INPUT CONDUCTANCE (g11) OR DC FORWARD CURRENT TRANSFER RATIO VOLTAGE GAIN (dB) SUSCEPTANCE (b11) (mmho) OUTPUT CONDUCTANCE (g22) (mmho) INPUT CONDUCTANCE (g11) OR VOLTAGE GAIN (dB) SUSCEPTANCE (b11) (mmho) OUTPUT SUSCEPTANCE (b22) (mmho), oC TA = +25 oC VCE = 6V VCE = 6Vf = 200MHz 100 f = 200MHz0b0.400 22 2.8 0.375 2.7 80 -20 0.350 2.6 g22 0.325 2.5 60 |Y21| -40 0.300 2.4 0.275 2.3 40 -60 θ 0.250 212.2 0.225 2.1 20 -80 0.200 2.0 0.175 1.9 -100012345678910 11 12012345678910 11 12 COLLECTOR CURRENT (mA) COLLECTOR CURRENT (mA) FIGURE 12. OUTPUT ADMITTANCE (Y22) vs COLLECTOR FIGURE 13. FORWARD TRANSADMITTANCE (Y21) vs CURRENT COLLECTOR CURRENTTooA = +25 C TA = +25CV-10CE = 6V VCE = 6V IC = 1mA f = 200MHz-20 -30 -40 -80 θ21 θ-50 12 -90 -100 -60 -110 30 |Y21| -70 |Y12| 0.21 -120 20 -80 -130 10 -90 -140 0 -100 -150 100 150 200 1000012345678910 11 12 FREQUENCY (MHz) COLLECTOR CURRENT (mA) FIGURE 14. FORWARD TRANSADMITTANCE (Y21) vs FIGURE 15. REVERSE TRANSADMITTANCE (Y12) vs FREQUENCY COLLECTOR CURRENT V+ T = +25oA C 10kΩ VCE = 6V IC = 1mA BIAS-CURRENT 470 0.6 -90 ADJ RL pF 0.01 µF 1µF 0.5 θ12 -95 2 VO 0.4 -100 51Ω64Q2 0.3 -105 0.01µF |Y12| 8 Q 30.2 -110 3 470pF 1µF 470pF 0.1 -115 0.01 µF 7 VI GEN 0 -120 100 1000 FREQUENCY (MHz) FIGURE 16. REVERSE TRANSADMITTANCE (Y12) vs FIGURE 17. VOLTAGE-GAIN TEST CIRCUIT USING CURRENT- FREQUENCY MIRROR BIASING FOR Q2 6-50 MAGNITUDE OF REVERSE MAGNITUDE OF FORWARD OUTPUT CONDUCTANCE (g ) (mmho) TRANSADMITTANCE (|Y12|) (mmho) TRANSADMITTANCE (|Y21|) (mmho) PHASE-ANGLE OF REVERSE PHASE-ANGLE OF FORWARD TRANSADMITTANCE (|θ12|) (DEGREES) TRANSADMITTANCE (|θ |) (DEGREES) OUTPUT SUSCEPTANCE (b 21 22 ) (mmho) MAGNITUDE OF REVERSE MAGNITUDE OF FORWARD TRANSADMITTANCE (|Y12|) (mmho) TRANSADMITTANCE (|Y21|) (mmho) PHASE-ANGLE OF REVERSE PHASE-ANGLE OF FORWARD TRANSADMITTANCE (|θ |) (DEGREES) TRANSADMITTANCE (|θ21|) (DEGREES)12, 1.5 - 8pF

VO

C*12 2 8.2 SHIELD kΩ 0.47µH Q5 14 620Ω 1000 1000 2 13 pF This circuit was chosen because it conveniently representspF V TESTI a close approximation in performance to a properly unilat-1000pF 0.3µH POINT eralized single transistor of this type. The use of Q3 ina4Q2 560Ω current-mirror configuration facilitates simplified biasing.1.8pF * 750Ω The use of the cascode circuit in no way implies that the3 C 1%1 transistors cannot be used individually. OHMITE pF Z144 6 +12V 25kΩ 8 Q3 *E.F. JOHNSON NUMBER 160-104-1 100075OR EQUIVALENT pF FIGURE 18. 100MHz POWER-GAIN AND NOISE-FIGURE TEST CIRCUIT GENERAL RADIO 1021-P1 100MHz BOONTON 91C 100MHz GENERATOR ATTN TEST SET R.F. VOLTMETER 12 VOLT DC POWER SUPPLY (a) POWER GAIN SET-UP VHF NOISE SOURCE 100MHz 100MHz NOISE FIGURE METER HEWLETT PACKARD HP343A TEST SET POST AMPLIFIER HEWLETT PACKARD HP342A 12 VOLT DC 15 VOLT DC POWER SUPPLY POWER SUPPLY (b) NOISE FIGURE SET-UP FIGURE 19. BLOCK DIAGRAMS OF POWER-GAIN AND NOISE-FIGURE TEST SET-UPS 6-51]
15

Similar documents

Applications Description
SEMICONDUCTORCA3096 March 1993 N-P-N/P-N-P Transistor Array Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose - Three N-P-N and high voltage silicon transistor arrays. Each array consists of - Two P-N-P five independent transistors (two p-n-
General Purpose N-P-N Features Description Applications Ordering Information
SEMICONDUCTORCA3045, CA3046 General Purpose N-P-N Mayrc 1h9 199493 Transistor Arrays Features Description • Two Matched Transistors: VBE Matched ±5mV; Input The CA3045 and CA3046 each consist of five general Offset Current 2µA Max at IC = 1mA purpose silicon n-p-n transistors on a common monolithic
Features Description Applications For applications such as balanced modulators or ring modu-
SEMICONDUCTORCA3039 March 1993 Diode Array Features Description • Six Matched Diodes on a Common Substrate The CA3039 consists of six ultra-fast, low capacitance diodes on a common monolithic substrate. Integrated circuit • Excellent Reverse Recovery Time 1ns Typical construction assures excellent s
Features Description
SEMICONDUCTORCA3018 March 1993 General Purpose Transistor Arrays Features Description • Matched Monolithic General Purpose Transistors The CA3018 and CA3018A consist of four general purpose silicon n-p-n transistors on a common monolithic substrate. • hFE Matched ..±10% Two of the four transistors a
Reverse Blocking Thyristors • Glassivated Surface for Reliability and Uniformity 4 AMPERES RMS • Power Rated at Economical Prices 200 thru 600 VOLTS
Preferred Device Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and http://onsemi.com remote control, and warning systems where reliability of operation is important. SCRs • Glassivated Surfac
DISCRETE SEMICONDUCTORS DATA SHEET BZX84 series Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of November 1993 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D088 BZX84 series Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of November 1993 File under Discrete Semiconductors, SC01 FEATURES PINNING • Total power dissipation: PIN DESCRIPTION max. 250 mW 1 anode • Three toler
DISCRETE SEMICONDUCTORS DATA SHEET BZX79 series Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of April 1992 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BZX79 series Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION • Total power dissipation: Low-power voltage regulator diodes in hermetically sealed leaded gl
DISCRETE SEMICONDUCTORS DATA SHEET BZX55 series Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of April 1992 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BZX55 series Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION • Total power dissipation: Low-power voltage regulator diodes in hermetically sealed leaded gl
DISCRETE SEMICONDUCTORS DATA SHEET BZX284 series Voltage regulator diodes Product specification 1995 Dec 13 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D154 BZX284 series Voltage regulator diodes Product specification 1995 Dec 13 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION • Total power dissipation: Low-power voltage regulator diodes in a small ceramic SMD SOD110 package. max
DISCRETE SEMICONDUCTORS DATA SHEET BZW03 series Voltage regulator diodes Product specification 1996 May 14 Supersedes data of April 1992 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BZW03 series Voltage regulator diodes Product specification 1996 May 14 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION construction. This package is hermetically sealed and fatigue free • Glass
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR6040/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR6040/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: Motorola Preferred Device • Ultrafast 100 Nanosecond Recovery Time • 175°C Operating Juncti
Order this document   For Use As A Damper Diode Motorola Preferred Device In High and Very High Resolution Monitors
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR5150E/D For Use As A Damper Diode Motorola Preferred Device In High and Very High Resolution Monitors SCANSWITCH The MUR5150E is a state-of-the-art Ultrafast Power Rectifier specifically RECTIFIER designed for use as a damper diode in horizont
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR490E/D  Ultrafast “E’’ Series with High Reverse Energy Capability
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR490E/D Ultrafast “E’’ Series with High Reverse Energy Capability MUR4100E is a .designed for use in switching power supplies, inverters and as Motorola Preferred Device free wheeling diodes, these state–of–the–art devices have the following fea
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR420/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR420/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • ° MUR420 and MUR460 are175 C Operating
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR3080/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR3080/D Motorola Preferred Device .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 75 ns (Typ) Soft Recovery Time • 175°C Operating Junc
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR3040/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR3040/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: Motorola Preferred Device • Ultrafast 100 Nanosecond Recovery Time • 175°C Operating Juncti
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR3020WT/D  .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features:
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR3020WT/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 and 60 Nanosecond Recovery Time • 175°C Operating Junction Temperature Mot
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR3020PT/D  .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features:
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR3020PT/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 and 60 Nanosecond Recovery Time *Motorola Preferred Devices • 175°C Operat
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR190E/D  Ultrafast “E’’ Series with High Reverse Energy Capability
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR190E/D Ultrafast “E’’ Series with High Reverse Energy Capability .designed for use in switching power supplies, inverters and as MUR1100E is a free wheeling diodes, these state–of–the–art devices have the Motorola Preferred Device following fea
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR1620CTR/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR1620CTR/D .designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Motorola Preferred Device Rectifiers, makes a single phase full–wave bridge. T
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR1620CT/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR1620CT/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 and 60 Nanosecond Recovery Times • 175°C Operating Junction Temperature Mo
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR1520/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR1520/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 and 60 Nanosecond Recovery Time Motorola Preferred Devices • 175°C Operating
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR120/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR120/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • 175°C Operating Junction Temperature M
Order this document   For Use As A Damper Diode Motorola Preferred Device In High and Very High Resolution Monitors
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR10150E/D For Use As A Damper Diode Motorola Preferred Device In High and Very High Resolution Monitors The MUR10150E is a state-of-the-art Power Rectifier specifically designed for use as a SCANSWITCH damper diode in horizontal deflection circ
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR10120E/D  For High and Very High Resolution Monitors
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR10120E/D For High and Very High Resolution Monitors This state–of–the–art power rectifier is specifically designed for Motorola Preferred Device use as a damper diode in horizontal deflection circuits for high and very high resolution monitors.
Order this document SEMICONDUCTOR TECHNICAL DATA by MSRB860–1/D  D2PAK–SL Straight Lead
Order this document SEMICONDUCTOR TECHNICAL DATA by MSRB860–1/D D2PAK–SL Straight Lead SOFT RECOVERY Designed for use as free wheeling diodes in variable speed motor control POWER RECTIFIER applications and other average frequency switching power supplies. These 8.0 AMPERES state–of–the–art devices
Order this document SEMICONDUCTOR TECHNICAL DATA by MSR860/D  Plastic TO–220 Package
Order this document SEMICONDUCTOR TECHNICAL DATA by MSR860/D Plastic TO–220 Package Designed for use as free wheeling diodes in variable speed motor control applications and other average frequency switching power supplies. These SOFT RECOVERY state–of–the–art devices have the following features: P
Order this document SEMICONDUCTOR TECHNICAL DATA by MRS1504T3/D SMB Power Surface Mount Package
Order this document SEMICONDUCTOR TECHNICAL DATA by MRS1504T3/D SMB Power Surface Mount Package Features mesa epitaxial construction with glass passivation. STANDARD RECOVERY Ideally suited for high frequency switching power supplies; free RECTIFIER wheeling diodes and polarity protection diodes. 1.
Order this document SEMICONDUCTOR TECHNICAL DATA by MR850/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MR850/D Axial lead mounted fast recovery power rectifiers are designed for special applications such as dc power supplies, inverters, converters, ultrasonic systems, choppers, low RF interference and free wheeling diodes. A complete line of fast re
Order this document SEMICONDUCTOR TECHNICAL DATA by MR750/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MR750/D • Current Capacity Comparable to Chassis Mounted Rectifiers • Very High Surge Capacity • Insulated Case Mechanical Characteristics: • Case: Epoxy, Molded MR754 and MR760 are Motorola Preferred Devices • Weight: 2.5 grams (approximately) •