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SEMICONDUCTORCA3096 March 1993 N-P-N/P-N-P Transistor Array Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose - Three N-P-N and high voltage silicon transistor arrays. Each array consists of - Two P-N-P five independent transistors (two p-n-p and three n-p-n types) on a common substrate, which has a separate con- • Differential Amplifiers nection. Independent connections for each transistor permit • DC Amplifiers maximum flexibility in circuit design. • Sense Amplifiers Types CA3096A, CA3096, and CA3096C are identical, except that the ...
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SEMICONDUCTORCA3096 March 1993 N-P-N/P-N-P Transistor Array

Applications Description

• Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose - Three N-P-N and high voltage silicon transistor arrays. Each array consists of - Two P-N-P five independent transistors (two p-n-p and three n-p-n types) on a common substrate, which has a separate con- • Differential Amplifiers nection. Independent connections for each transistor permit • DC Amplifiers maximum flexibility in circuit design. • Sense Amplifiers Types CA3096A, CA3096, and CA3096C are identical, except that the CA3096A specifications include parameter • Level Shifters matching and greater stringency in ICBO, ICEO, and • Timers VCE(SAT). The CA3096C is a relaxed version of the CA3096. • Lamp and Relay Drivers • Thyristor Firing Circuits CA3096A, CA3096, CA3096C

Essential Differences

• Temperature Compensated Amplifiers • Operational Amplifiers CHARACTERISTIC CA3096A CA3096 CA3096C V(BR)CEO (V) Min

Ordering Information n-p-n 35 35 24

PART TEMPERATURE p-n-p -40 -40 -24 NUMBER RANGE PACKAGE V(BR)CBO (V) Min. CA3096AE -55oC to +125oC 16 Lead Plastic DIP n-p-n 45 45 30 CA3096AM -55oC to +125oC 16 Lead Narrow Body SOIC p-n-p -40 -40 -24 CA3096AM96 -55oC to +125oC 16 Lead Narrow Body SOIC* hFE at 1mA CA3096CE -55oC to +125oC 16 Lead Plastic DIP n-p-n 150-500 150-500 100-670 CA3096E -55oC to +125oC 16 Lead Plastic DIPoop-n-p 20-200 20-200 15-200CA3096M -55 C to +125 C 16 Lead Narrow Body SOICoohFE at 100µACA3096M96 -55 C to +125 C 16 Lead Narrow Body SOIC* * Denotes Tape and Reel p-n-p 40-250 40-250 30-300

Pinout ICBO (nA) Max.

n-p-n 40 100 100 CA3096, CA3096A, CA3096C (PDIP, 150 mil SOIC) p-n-p -40 -100 -100 TOP VIEW ICEO (nA) Max. n-p-n 100 1000 1000 1 16 SUBSTRATE p-n-p -100 -1000 -1000 2 15 Q1 VCE SAT (V) Max. 3 Q5 14 n-p-n 0.5 0.7 0.7 4 13 |VIO| (mV)Max. 5 Q2 12 n-p-n 5 - - 6 Q4 11 p-n-p 5 - - 7 10 |IIO| (µA) Max. 8 Q3 9 n-p-n 0.6 - - p-n-p 0.25 - - CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures. File Number 595.2 Copyright © Harris Corporation 1993 6-33,

Specifications CA3096, CA3096A, CA3096C Absolute Maximum Ratings Operating Conditions

N-P-N P-N-P Operating Temperature Range .-55oC ≤ TA ≤ +125oC Collector-to-Emitter Voltage, VCEO Storage Temperature Range.-65 oC ≤ TA ≤ +150oC CA3096, CA3096A .35V -40V CA3096C .24V -24V Collector-to-Base Voltage, VCBO CA3096, CA3096A .45V -40V CA3096C .30V -24V Collector-to-Substrate Voltage, VCIO (Note 1) CA3096, CA3096A .45V - CA3096C .30V - Emitter-to-Substrate Voltage, VEIO CA3096, CA3096A .- -40V CA3096C .- -24V Emitter-to-Base Voltage, VEBO CA3096, CA3096A .6V -40V CA3096C .6V -24V Collector Current, IC (All Types) ..50mA -10mA Power Dissipation, PD (Up to TA = +55 oC) Device (Total) .750mW Each Transistor .200mW Above TA = +55 oC..Derate Linearly at 6.67mW/oC Junction Temperature (Plastic Packages) .+150oC Lead Temperature (Soldering 10 Sec.).+300oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Static Electrical Specifications TA = +25οC

For Equipment Design

LIMITS

CA3096A CA3096 CA3096C

TEST

PARAMETERS CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS FOR EACH N-P-N TRANSISTOR ICBO VCB = 10V, - 0.001 40 - 0.001 100 - 0.001 100 nA IE = 0 ICEO VCE =10V, - 0.006 100 - 0.006 1000 - 0.006 1000 nA IB = 0 V(BR)CEO IC =1mA, IB = 0 35 50 - 35 50 - 24 35 - V V(BR)CBO IC =10µA, 45 100 - 45 100 - 30 80 - V IE = 0 V(BR)CIO ICI = 10µA, 45 100 - 45 100 - 30 80 - V IB = IE = 0 V(BR)EBO IE = 10µA, 6 8 - 6 8 - 6 8 - V IC = 0 VZ IZ = 10µA 6 7.9 9.8 6 7.9 9.8 6 7.9 9.8 V VCE SAT lC =10mA, - 0.24 0.5 - 0.24 0.7 - 0.24 0.7 V IB = 1mA VBE (Note 2) IC =1mA, 0.6 0.69 0.78 0.6 0.69 0.78 0.6 0.69 0.78 V VCE = 5V hFE (Note 2) 150 390 500 150 390 500 100 390 670 6-34,

Specifications CA3096, CA3096A, CA3096C Static Electrical Specifications TA = +25οC (Continued)

For Equipment Design

LIMITS

CA3096A CA3096 CA3096C

TEST

PARAMETERS CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS |∆VBE/∆T| (Note 2) IC = 1mA, - 1.9 - - 1.9 - - 1.9 - mV/oC VCE = 5V FOR EACH P-N-P TRANSISTOR ICBO VCB = -10V, - -0.006 -40 - -0.06 -100 - -0.06 -100 nA IE = 0 ICEO VCE = -10V, - -0.12 -100 - -0.12 -1000 - -0.12 -1000 nA IB = 0 V(BR)CEO IC = -100µA, -40 -75 - -40 -75 - -24 -30 - V IB = 0 V(BR)CBO IC = -10µA, -40 -80 - -40 -80 - -24 -60 - V IE = 0 V(BR)EBO IE = -10µA, -40 -100 - -40 -100 - -24 -80 - V IC = 0 V(BR)ElO IEI = 10µA, 40 100 - 40 100 - 24 80 - V IB = IC = 0 VCE SAT IC = -1mA, - -0.16 -0.4 - -0.16 -0.4 - -0.16 -0.4 V IB = -100µA VBE (Note 2) IC = -100µA, -0.5 -0.6 -0.7 -0.5 -0.6 -0.7 -0.5 -0.6 -0.7 V VCE = -5V hFE (Note 2) IC = -100µA, 40 85 250 40 85 250 30 85 300 VCE = -5V IC = -1mA, 20 47 200 20 47 200 15 47 200 VCE = -5V |∆VBE/∆T| (Note 2) IC = -100µA, - 2.2 - - 2.2 - - 2.2 - mV/oC VCE = -5V ICBO Collector-Cutoff Current VZ Emitter-to-Base Zener Voltage ICEO Collector-Cutoff Current VCE SAT Collector-to-Emitter Saturation Voltage V(BR)CEO Collector-to-Emitter Breakdown Voltage VBE Base-to-Emitter Voltage V(BR)CBO Collector-to-Base Breakdown Voltage hFE DC Forward-Current Transfer Ratio V(BR)CIO Collector-to-Substrate Breakdown Voltage |∆VBE/∆T| Magnitude of Temperature Coefficient: (for each transistor) V(BR)EBO Emitter-to-Base Breakdown Voltage NOTE: 1. The collector of each transistor of the CA3096 is isolated from the substrate by an integral diode. The substrate (terminal 16) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action. 2. Actual forcing current is via the emitter for this test. 6-35,

Specifications CA3096, CA3096A, CA3096C Static Electrical Specifications TA = +25oC (CA3096A Only)

For Equipment Design

LIMITS

CA3096A PARAMETERS SYMBOL TEST CONDITIONS MIN TYP MAX UNITS FOR TRANSISTORS Q1 AND Q2 (AS A DIFFERENTIAL AMPLIFIER) Absolute Input Offset Voltage |VIO| VCE = 5V, IC = 1mA - 0.3 5 mV Absolute Input Offset Current |IIO| - 0.07 0.6 µA Absolute Input Offset Voltage ∆V IO - 1.1 - µV/oC Temperature Coefficient ∆T FOR TRANSISTORS Q4 AND Q5 (AS A DIFFERENTIAL AMPLIFIER) Absolute Input Offset Voltage |VIO| VCE = -5V, IC = -100µA - 0.15 5 mV RS = 0 Absolute Input Offset Current |IIO| - 2 250 nA Absolute Input Offset Voltage ∆V IO - 0.54 - µV/oC Temperature Coefficient ∆T

Dynamic Electrical Specifications T oA = +25 C

Typical Values Intended Only for Design Guidance

TYPICAL

PARAMETERS SYMBOL TEST CONDITIONS VALUES UNITS FOR EACH N-P-N TRANSISTOR Noise Figure (Low Frequency) NF f = 1kHz, VCE = 5V, IC = 1mA, RS = 1kΩ 2.2 dB Low-Frequency, Input Resistance RI f = 1.0kHz, VCE = 5V IC = 1 mA 10 kΩ Low-Frequency Output Resistance RO f = 1.0kHz, VCE = 5V IC = 1 mA 80 kΩ Admittance Characteristics Forward Transfer Admittance gFE f = 1MHz, VCE = 5V, IC = 1mA 7.5 mmho yFE bFE f = 1MHz, VCE = 5V, IC = 1mA -j13 mmho Input Admittance gIE f = 1MHz, VCE = 5V, IC = 1mA 2.2 mmho yIE bIE f = 1MHz, VCE = 5V, IC = 1mA j3.1 mmho Output Admittance gOE f = 1MHz, VCE = 5V, IC = 1mA 0.76 mmho yOE bOE f = 1MHz, VCE = 5V, IC = 1mA j2.4 mmho Gain-Bandwidth Product fT VCE = 5V, IC = 1.0mA 280 MHz VCE = 5V, IC = 5mA 335 MHz Emitter-To-Base Capacitance CEB VEB = 3V 0.75 pF Collector-To-Base Capacitance CCB VCB = 3V 0.46 pF Collector-To-Substrate Capacitance CCI VCI = 3V 3.2 pF 6-36,

Specifications CA3096, CA3096A, CA3096C Dynamic Electrical Specifications T = +25oA C

Typical Values Intended Only for Design Guidance

TYPICAL

PARAMETERS SYMBOL TEST CONDITIONS VALUES UNITS FOR EACH P-N-P TRANSISTOR Noise Figure (Low Frequency) NF f = 1kHz, IC = 100µA, RS = 1kΩ 3 dB Low-Frequency Input Resistance RI f = 1kHz, VCE = 5V, IC = 100µA 27 kΩ Low-Frequency Output Resistance RO f = 1kHz, VCE = 5V, IC = 100µA 680 kΩ Gain-Bandwidth Product fT VCE = 5V, IC = 100µA 6.8 MHz Emitter-To-Base Capacitance CEB VEB = -3V 0.85 pF Collector-To-Base Capacitance CCB VCB = -3V 2.25 pF Base-To-Substrate Capacitance CBI VBI = 3V 3.05 pF

Metallization Mask Layout

CA3096H 0 10 20 30 40 37-45 20 (0.940-1.143) 4-10 (0.102-0.254) 37-45 (0.940-1.143) Dimensions in parentheses are in millimeters and are derived from the ba- sic inch dimensions as indicated. Grid graduations are in mils (10-3 inch). The photographs and dimensions represent a chip when it is part of the wafer. When the wafer is cut into chips, the cleavage angles are 57o instead of 90o with respect to the face of the chip. Therefore, the isolated chip is actually 7 mils (0.17mm) larger in both dimensions. 6-37,

Typical Performance Curves

10 104 VZ 102 VCE = 10V VCE = 5V10 10-1 10-2 10-1 7 7.5 8 8.5 9 -100 -75 -50 -25 0 25 50 75 100 ZENER VOLTAGE (V) TEMPERATURE (oC) FIGURE 1. BASE-TO-EMITTER ZENER CHARACTERISTIC FIGURE 2. COLLECTOR CUT-OFF CURRENT (ICEO) vs (N-P-N) TEMPERATURE (N-P-N) 103 500 TA = +85 oC 102 400 VCB = 15V TA = +25 oC 10 VCB = 10V 300 o VCB = 5V TA = -40C1200 10-1 100 10-2 0 -75 -50 -25 0 25 50 75 100 0.01 0.1 1 10 TEMPERATURE (oC) COLLECTOR CURRENT (mA) FIGURE 3. COLLECTOR CUT-OFF CURRENT (ICBO) vs FIGURE 4. TRANSISTOR (N-P-N) hFE vs COLLECTOR TEMPERATURE (N-P-N) CURRENT 0.9 VCE = 5V 0.9 IC = 10mA, 1.67mV/ oC 0.8 IC = 5mA, 1.77mV/ oC IC = 1mA, 1.90mV/ oC 0.8 IC = 100µA, 2.05mV/oC 0.7 0.7 0.6 0.6 0.5 0.5 0.4 0.4 0.01 0.1 1 10 -40 -20 0 20 40 60 80 100 COLLECTOR CURRENT (mA) TEMPERATURE (oC) FIGURE 5. VBE (N-P-N) vs COLLECTOR CURRENT FIGURE 6. VBE (N-P-N) vs TEMPERATURE 6-38 BASE TO EMITTER VOLTAGE (V) COLLECTOR CUT-OFF CURRENT (pA) ZENER CURRENT (mA) BASE TO EMITTER VOLTAGE (V) DC FORWARD CURRENT TRANSFER RATIO COLLECTOR CUT-OFF CURRENT (pA),

Typical Performance Curves (Continued)

TA = +85 oC 1.0 TA = +25 oC VCE = -15V 0.8 β = 10 VCE = -10V T = -40oC VCE = -5V0.6 A 102 0.4 0.2 0.1 0.1 1.0 10 100 -50 -25 0 25 50 75 100 COLLECTOR CURRENT (mA) TEMPERATURE ( oC) FIGURE 7. VCE SAT (N-P-N) vs COLLECTOR CURRENT FIGURE 8. COLLECTOR CUT-OFF CURRENT (ICEO) vs TEMPERATURE (P-N-P) 103 110 100 VCE = 20V VCB = -15V 90 VCE = 5V VCB = -10V 80 VCB = -5V 60 VCE = 1V 10 4010-50 -25 0 25 50 75 100 0.01 0.1 1.0 10 TEMPERATURE (oC) COLLECTOR CURRENT (mA) FIGURE 9. COLLECTOR CUT-OFF CURRENT (ICBO) vs FIGURE 10. TRANSISTOR (P-N-P) hFE vs COLLECTOR TEMPERATURE (P-N-P) CURRENT VCE = 5V 1.0 VCE = 5V IC = 100µA 0.9 80 0.8 IC = 10µA 0.7 60 0.6 IC = 1mA 0.5 40 0.4 0.3 20 IC = 5mA 0.2 0.100-40 -20 0 20 40 60 80 0.01 0.1 1.0 10 TEMPERATURE (oC) COLLECTOR CURRENT (mA) FIGURE 11. TRANSISTOR (P-N-P) hFE vs TEMPERATURE FIGURE 12. VBE (P-N-P) vs COLLECTOR CURRENT 6-39 DC FORWARD CURRENT TRANSFER RATIO COLLECTOR CUT-OFF CURRENT (pA) COLLECTOR TO EMITTER SATURATION VOLTAGE (V) BASE TO EMITTER VOLTAGE (V) DC FORWARD CURRENT TRANSFER RATIO COLLECTOR CUT-OFF CURRENT (pA),

Typical Performance Curves (Continued)

0.9 0.8 0.9 IC = 5mA, ∆VBE/∆T - 0.97mV/oC 0.7 0.8 0.6 0.5 0.7 IC = 1mA, -1.84mV/ oC 0.4 0.6 0.3 IC = 100µA, -2.2mV/oC 0.2 0.5 0.1 0.4 0 -40 -20 0 20 40 60 80 0.01 0.1 1.0 10 TEMPERATURE (oC) COLLECTOR CURRENT (mA) FIGURE 13. VBE (P-N-P) vs TEMPERATURE FIGURE 14. MAGNITUDE OF INPUT OFFSET VOLTAGE |VIO| vs COLLECTOR CURRENT FOR N-P-N TRANSISTOR Q1 - Q2 0.5 18 RSOURCE = 500Ω 0.4 14 12 IC = 3mA 0.3 1mA 8 10µA 0.2 100µA 0.14000.01 0.1 1 10 0.01 0.1 1.0 10 100 COLLECTOR CURRENT (mA) FREQUENCY (kHz) FIGURE 15. MAGNITUDE OF INPUT OFFSET VOLTAGE |VIO| vs FIGURE 16. NOISE FIGURE vs FREQUENCY FOR N-P-N COLLECTOR CURRENT FOR P-N-P TRANSISTOR TRANSISTORS Q4 - Q5 18 28 RSOURCE = 1kΩ RSOURCE = 10kΩ IC = 3mA 10 16 I1mA C = 3mA 8 12 1mA 10µA 8 10µA 100µA 4 100µA000.01 0.1 1 10 100 0.01 0.1 1.0 10 100 FREQUENCY (kHz) FREQUENCY (kHz) FIGURE 17. NOISE FIGURE vs FREQUENCY FOR N-P-N FIGURE 18. NOISE FIGURE vs FREQUENCY FOR N-P-N TRANSISTORS TRANSISTORS 6-40 NOISE FIGURE (dB) MAGNITUDE OF INPUT OFFSET VOLTAGE (mV) BASE TO EMITTER VOLTAGE (V) NOISE FIGURE (dB) NOISE FIGURE (dB) MAGNITUDE OF INPUT OFFSET VOLTAGE (mV),

Typical Performance Curves (Continued)

28 400 RSOURCE = 100kΩ VCE = 5V RSOURCE = 1MΩ24 IC = 1mA 16 100µA 10µA 4 100µA 10µA000.01 0.1 1 10 100 0.1 1.0 10 FREQUENCY (kHz) COLLECTOR CURRENT (mA) FIGURE 19. NOISE FIGURE vs FREQUENCY FOR N-P-N FIGURE 20. GAIN-BANDWIDTH PRODUCT vs COLLECTOR TRANSISTORS CURRENT (N-P-N) 4.0 1000 f = 1kHz 3.5 3.0 CCI 100 2.5 N-P-N 2.0 P-N-P 1.5 1.0 CEB

CCB

0.5012345678910 0.01 0.1 1 10 BIAS VOLTAGE (V) COLLECTOR CURRENT (mA) FIGURE 21. CAPACITANCE vs BIAS VOLTAGE (N-P-N) FIGURE 22. INPUT RESISTANCE vs COLLECTOR CURRENT 104 40 f = 1kHz gFE IC = 1mA 3 N-P-N10 P-N-P 20 102 10 gFE 100µA 10 bFE 100µA -10 bFE 1mA 1 -20 0.01 0.1 1.0 10 1 10 100 COLLECTOR CURRENT (mA) FREQUENCY (MHz) FIGURE 23. OUTPUT RESISTANCE vs COLLECTOR CURRENT FIGURE 24. FORWARD TRANSCONDUCTANCE vs

FREQUENCY

6-41 OUTPUT RESISTANCE (kΩ) CAPACITANCE (pF) NOISE FIGURE (dB) FORWARD TRANSFER CONDUCTANCE (gFE) OR INPUT RESISTANCE (kΩ) GAIN-BANDWIDTH PRODUCT (MHz) FORWARD TRANSFER SUSCEPTANCE (bFE) (mmho),

Typical Performance Curves (Continued)

gIE bIE IC = 10mA5 2.5 IC = 1mA bOE 10mA 2.0 100µA 3 100µA 1mA 1.5 bOE 10µA 1mA 2 1.0 1mA gOE 100µA 1 100µA 0.5 gOE 0 10µA0110 100 1 10 100 FREQUENCY (MHz) FREQUENCY (MHz) FIGURE 25. INPUT ADMITTANCE vs FREQUENCY FIGURE 26. OUTPUT ADMITTANCE vs FREQUENCY 30 30 RSOURCE = 500Ω RSOURCE = 1kΩ 20 20 IC = 1mA IC = 1mA 10µA 10µA 10 10 100µA 100µA000.01 0.1 1.0 10 100 0.01 0.1 1 10 100 FREQUENCY (kHz) FREQUENCY (kHz) FIGURE 27. NOISE FIGURE vs FREQUENCY (P-N-P) FIGURE 28. NOISE FIGURE vs FREQUENCY (P-N-P) 40 8 RSOURCE = 10kΩ VCE = 5V 30 7 IC = 1mA 20 6 100µA 10 5 10µA040.01 0.1 1.0 10 100 0.1 1.0 10 FREQUENCY (kHz) COLLECTOR CURRENT (mA) FIGURE 29. NOISE FIGURE vs FREQUENCY (P-N-P) FIGURE 30. GAIN-BANDWIDTH PRODUCT vs COLLECTOR CURRENT (P-N-P) 6-42 NOISE FIGURE (dB) NOISE FIGURE (dB) INPUT CONDUCTANCE (gIE) OR INPUT SUSCEPTANCE (bIE) (mmho) GAIN-BANDWIDTH PRODUCT (MHz) NOISE FIGURE (dB) OUTPUT CONDUCTANCE (gOE) OR OUTPUT SUSCEPTANCE (bOE) (mmho),

Typical Performance Curves (Continued) CBI CBC C

1 BE012345678910 BIAS VOLTAGE (V) FIGURE 31. CAPACITANCE vs BIAS VOLTAGE (P-N-P)

Typical Applications

(SUBSTRATE) 9 CENTER FREQUENCY: 1kHz 2 16 8 f1 500Ω 1 3kΩ 1µF 7 0.1µF Q4 3 15 10 12 6 1kΩ 14 5 V+ = 10V Q5 3kΩ 4 1kΩ 0.1µF2679OUTPUT f2 500Ω15Q2 44003804-20 -10 0 10 20 f2 - f1 > 0 f1 = f2 f1 - f2 > 0 NOTE: F1 OR F2 < 10kHz FREQUENCY DEVIATION (kHz) FIGURE 32. FREQUENCY COMPARATOR USING CA3096 FIGURE 33. FREQUENCY COMPARATOR CHARACTERISTICS

G

NTC MT110kΩ 10kΩ 5.1kΩ

SENSOR

1kΩ T2300B 2 10 13 + MT2 120V AC 100µF 11 Q QQ - 4 5 14 1 12V6112 15 RP 5 Q2 LOAD 6.8kΩ Q 2W 3 5.1kΩ 10kΩ478916 FIGURE 34. LINE-OPERATED LEVEL SWITCH USING CA3096A OR CA3096 6-43 CAPACITANCE (pF) OUTPUT VOLTAGE (V),

Typical Applications (Continued)

+6V 13 MOSFET Q5 20kΩ 5kΩ 5kΩ

OUTPUT

15 103620kΩ 9 11 Q 1kΩ41QQ58Q3 121224750MΩ 5µF 1kΩ 3.9kΩ 10kΩ TIME DELAY CHANGES ±7% 16 FOR SUPPLY VOLTAGE CHANGE OF ±10% FIGURE 35. ONE-MINUTE TIMER USING CA3096A AND A MOSFET V+ VT = ± 1kΩ RL 1kΩ IO RL 12 EO +VT IF IO = 1mA AND RL = 1kΩ VT = ± 36mV Q4 11 VIN t 10 2kΩ 15 -VT 14 Q5 3 13 6 100Ω VIN1QQ125100Ω EO249IO0t1kΩ 8 Q3 1kΩ V- FIGURE 36. CA3096A SMALL-SIGNAL ZERO VOLTAGE DETECTOR HAVING NOISE IMMUNITY 1.5V LAMP GE 2158D OR EQUIVALENT Q5 14 10 10kΩ 2kΩ 9 11 Q4 8 Q33612 7 1.5MΩ 1 Q1 Q2524500kΩ 5µF 2kΩ 1kΩ (SUBSTRATE) FIGURE 37. TEN-SECOND TIMER OPERATED FROM 1.5V SUPPLY USING CA3096 6-44,

Typical Applications (Continued)

+6V 100kΩ 6.2kΩ 6.2kΩ 1% 1% 1%

OUTPUT

10 1363NOTES: INPUT 11 Q4 Q5 14 5 Q2 Q1 1 1. Can be operated with either dual 100kΩ 100kΩ 12 1542supply or single supply.1% 1% 2. Wide-input common mode range 9 +5V to -5V. 3. Low bias current: <1µA. Q3 8 51kΩ 5kΩ7 1% 1% 51kΩ 300Ω 1kΩ 1% 1% 1% 16 -6V FIGURE 38. CASCADE OF DIFFERENTIAL AMPLIFIERS USING CA3096A 1 10 100 1000 FREQUENCY (kHz) FIGURE 39. GAIN-FREQUENCY CHARACTERISTICS 6-45 VOLTAGE GAIN (dB)]
15

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Order this document SEMICONDUCTOR TECHNICAL DATA by MUR490E/D Ultrafast “E’’ Series with High Reverse Energy Capability MUR4100E is a .designed for use in switching power supplies, inverters and as Motorola Preferred Device free wheeling diodes, these state–of–the–art devices have the following fea
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Order this document SEMICONDUCTOR TECHNICAL DATA by MUR420/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • ° MUR420 and MUR460 are175 C Operating
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Order this document SEMICONDUCTOR TECHNICAL DATA by MUR3020WT/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 and 60 Nanosecond Recovery Time • 175°C Operating Junction Temperature Mot
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Order this document SEMICONDUCTOR TECHNICAL DATA by MUR3020PT/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 and 60 Nanosecond Recovery Time *Motorola Preferred Devices • 175°C Operat
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Order this document SEMICONDUCTOR TECHNICAL DATA by MUR190E/D Ultrafast “E’’ Series with High Reverse Energy Capability .designed for use in switching power supplies, inverters and as MUR1100E is a free wheeling diodes, these state–of–the–art devices have the Motorola Preferred Device following fea
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Order this document SEMICONDUCTOR TECHNICAL DATA by MUR1620CT/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 and 60 Nanosecond Recovery Times • 175°C Operating Junction Temperature Mo
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Order this document SEMICONDUCTOR TECHNICAL DATA by MUR120/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • 175°C Operating Junction Temperature M
Order this document   For Use As A Damper Diode Motorola Preferred Device In High and Very High Resolution Monitors
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR10150E/D For Use As A Damper Diode Motorola Preferred Device In High and Very High Resolution Monitors The MUR10150E is a state-of-the-art Power Rectifier specifically designed for use as a SCANSWITCH damper diode in horizontal deflection circ
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Order this document SEMICONDUCTOR TECHNICAL DATA by MSRB860–1/D D2PAK–SL Straight Lead SOFT RECOVERY Designed for use as free wheeling diodes in variable speed motor control POWER RECTIFIER applications and other average frequency switching power supplies. These 8.0 AMPERES state–of–the–art devices
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