Download: General Purpose N-P-N Features Description Applications Ordering Information

SEMICONDUCTORCA3045, CA3046

General Purpose N-P-N

Mayrc 1h9 199493 Transistor Arrays

Features Description

• Two Matched Transistors: VBE Matched ±5mV; Input The CA3045 and CA3046 each consist of five general Offset Current 2µA Max at IC = 1mA purpose silicon n-p-n transistors on a common monolithic substrate. Two of the transistors are internally connected to • 5 General Purpose Monolithic Transistors form a differentially connected pair. • Operation From DC to 120MHz The transistors of the CA3045 and CA3046 are well suited to • Wide Operating Current Range a wide variety of applications in low power systems in the DC through VHF range. They may be used as discrete transis- • Low Noise Figure 3.2dB Typical at 1kHz tors in conventional circuits. However, in addition, they • Full Military Temperature Range -55oC to +125oC provide the very significant inherent integrated circuit advantages of close electrical and thermal matching.

Applications Ordering Information

• Three Isolated Transistors and One Differentially Connected Transistor Pair for Low Power Applications PART TEMPERATURE at Frequencies from DC Through the VHF Range NUMBER RANGE PACKAGE • Custom Designed Differential Amplifiers CA3045 -55 oC to +125oC 14 Lead Ceramic Sidebraze DIP CA3045F -55oC to +125oC 14 Lead Ceramic DIP • Temperature Compensated Amplifiers CA3046 -55oC to +125oC 14 Lead Plastic DIP • See Application Note, AN5296 “Application of the CA3018 Integrated-Circuit Transistor Array” for CA3046M -55oC to +125oC 14 Lead SOIC Suggested Applications CA3046M96 -55oC to +125oC 14 Lead SOIC* * Denotes Tape and Reel

Pinout

CA3045, CA3046 (PDIP, CDIP, SOIC) TOP VIEW 1 14 Q5 2 Q1 13 SUBSTRATE DIFFERENTIAL 3 12

PAIR

4 Q2 11 Q4 5 106978Q3 CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures. File Number 341.2 Copyright © Harris Corporation 1993 6-15,

Specifications CA3045, CA3046 Absolute Maximum Ratings (T oA = +25 C) Operating Conditions

Collector-to-Emitter Voltage (VCEO) .15V Operating Temperature Range .-55 oC ≤ TA ≤ +125oC Collector-to-Base Voltage (VCBO) .20V Storage Temperature Range..-65 oC ≤ TA ≤ 150oC Collector-to-Substrate Voltage (VCIO) (Note 1) .20V Emitter-to-Base Voltage (VEBO) .5V Collector Current (IC) .50mA Power Dissipation CA3045 Each Transistor Total Pkg. Up to TA = +75 oC.300mW 750mW Above TA = +75 oC .Derate Linearly 8mW/oC CA3046, CA3045F Each Transistor Total Pkg. Up to TA = +55 oC.300mW 750mW Above TA = +55 oC ..Derate Linearly 6.67mW/oC Junction Temperature .+175oC Junction Temperature (Plastic Package) .+150oC Lead Temperature (Soldering 10 Sec.).+300oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Electrical Specifications TA = +25oC, Characteristics apply for each transistor in CA3045 & CA3046 as specified. LIMITS

PARAMETERS SYMBOL TEST CONDITIONS MIN TYP MAX UNITS STATIC CHARACTERISTICS Collector-to-Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 20 60 - V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0 15 24 - V Collector-to-Substrate Breakdown Voltage V(BR)CIO IC = 10µA, ICI = 0 20 60 - V Emitter-to-Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 057- V Collector Cutoff Current (Figure 1) ICBO VCB = 10V, IE = 0 - 0.002 40 nA Collector Cutoff Current (Figure 2) ICEO VCE = 10V, IB = 0 - See Fig. 2 0.5 µA Static Forward Current Transfer Ratio (Static hFE VCE = 3V IC = 10mA - 100 - - Beta) (Note 2) (Figure 3) IC = 1mA 40 100 - - IC = 10µA - 54 - - Input Offset Current for Matched Pair Q1 and VCE = 3V, IC = 1mA - 0.3 2 µA Q2. |IIO1 - IIO2| (Note 2) (Figure 4) Base-to-Emitter Voltage (Note 2) (Figure 5) VBE VCE = 3V IE = 1mA - 0.715 - V IE = 10mA - 0.800 - V Magnitude of Input Offet Voltage for Differen- VCE = 3V, IC = 1mA - 0.45 5 mV tial Pair |VBE1 - VBE2| (Note 2) (Figures 5, 7) Magnitude of Input Offset Voltage for Isolated VCE = 3V, IC = 1mA - 0.45 5 mV Transistors |VBE3 - VBE4|, |VBE4 - VBE5|, |VBE5 - VBE3| (Note 2) ( Figures 5, 7) Temperature Coefficient of Base-to-Emitter ∆V VCE = 3V, IC = 1mA - -1.9 - mV/oC Voltage (Figure 6) BE ∆T Collector-to-Emitter Saturation Voltage VCES IB = 1mA, IC = 10mA - 0.23 - V Temperature Coefficient: Magnitude of Input ∆V VCE = 3V, IC = 1mA - 1.1 - µV/oC Offset Voltage (Figure 7) IO ∆T 6-16,

Specifications CA3045, CA3046 Electrical Specifications TA = +25oC, Characteristics apply for each transistor in CA3045 & CA3046 as specified. (Continued) LIMITS

PARAMETERS SYMBOL TEST CONDITIONS MIN TYP MAX UNITS DYNAMIC CHARACTERISTICS Low Frequency Noise Figure (Figure 9) NF f = 1kHz, VCE = 3V, IC = 100µA, - 3.25 - dB Source Resistance = 1kΩ Low Frequency, Small Signal Equivalent Circuit Characteristics Forward Current Transfer Ratio (Figure 11) hFE f = 1kHz, VCE = 3V, IC = 1mA - 110 - - Short Circuit Input Impedance (Figure 11) hIE f = 1kHz, VCE = 3V, IC = 1mA - 3.5 - kΩ Open Circuit Output Impedance (Figure 11) hOE f = 1kHz, VCE = 3V, IC = 1mA - 15.6 - µmho Open Circuit Reverse Voltage Transfer hRE f = 1kHz, VCE = 3V, IC = 1mA - 1.8 x 10 -4 - - Ratio (Figure 11) Admittance Characteristics Forward Transfer Admittance (Figure 12) YFE f = 1kHz, VCE = 3V, IC = 1mA - 31 - j1.5 - - Input Admittance (Figure 13) YIE f = 1kHz, VCE = 3V, IC = 1mA - 0.3 + j0.04 - - Output Admittance (Figure 14) YOE f = 1kHz, VCE = 3V, IC = 1mA - 0.001 + j0.03 - - Reverse Transfer Admittance (Figure 15) YRE f = 1kHz, VCE = 3V, IC = 1mA - See Fig. 14 - - Gain Bandwidth Product (Figure 16) fT VCE = 3V, IC = 3mA 300 550 - MHz Emitter-to-Base Capacitance CEB VEB = 3V, IE = 0 - 0.6 - pF Collector-to-Base Capacitance CCB VCB = 3V, IC = 0 - 0.58 - pF Collector-to-Substrate Capacitance CCI VCS = 3V, IC = 0 - 2.8 - pF NOTE: 1. The collector of each transistor of the CA3045 and CA3046 is isolated from the substrate by an integral diode. The substrate (Terminal 13) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action. 2. Actual forcing current is via the emitter for this test.

Typical Performance Curves

102 103 I = 0 IB = 0E 10 102 VCB = 15V VCB = 10V 10 VCE = 10V1 VCB = 5V 10-1 1 VCE = 5V 10-2 10-1 10-3 10-2 10-4 10-3 0 25 50 75 100 125 0 25 50 75 100 125 AMBIENT TEMPERATURE (oC) AMBIENT TEMPERATURE (oC) FIGURE 1. TYPICAL COLLECTOR-TO-BASE CUTOFF CURRENT FIGURE 2. TYPICAL COLLECTOR-TO-EMITTER CUTOFF vs TEMPERATURE FOR EACH TRANSISTOR CURRENT vs TEMPERATURE FOR EACH

TRANSISTOR

6-17 COLLECTOR CUTOFF CURRENT (nA) COLLECTOR CUTOFF CURRENT (nA), 120 1.1 10 VCE = 3V VCE = 3V TA = +25 oC TA = +25 oC 110 hFE 100 1.0 1.0hhFE1ORFE280hh0.9FE2FE10.1 60 0.8 50 0.01 0.01 0.1 1.0 10 0.01 0.1 1.0 10 COLLECTOR CURRENT (mA) EMITTER CURRENT (mA) FIGURE 3. TYPICAL STATIC FORWARD CURRENT TRANSFER FIGURE 4. TYPICAL INPUT OFFSET CURRENT FOR MATCHED RATIO AND BETA RATIO FOR Q1 AND Q2 vs TRANSISTOR PAIR Q1Q2 vs COLLECTOR CURRENT EMITTER CURRENT 0.8 VCE = 3V TA = +25 oC VCE = 3V 1.0 0.7 VBE 3 0.9 0.8 0.6 2 0.7 I = 3mA 0.6 E 0.5 1 IE = 1mA INPUT OFFSET VOLTAGE IE = 0.5mA0.5 0.4 0 0.4 0.01 0.1 1.0 10 -75 -50 -25 0 25 50 75 100 125 EMITTER CURRENT (mA) TEMPERATURE (oC) FIGURE 5. TYPICAL STATIC BASE-TO-EMITTER VOLTAGE FIGURE 6. TYPICAL BASE-TO-EMITTER VOLTAGE CHARACTERISTICS AND INPUT OFFSET VOLTAGE CHARACTERISTIC vs TEMPERATURE FOR EACH FOR DIFFERENTIAL PAIR AND PAIRED ISOLATED TRANSISTOR TRANSISTORS vs EMITTER CURRENTVV= 3VCE = 3V CERS = 500Ω 4.00 T oA = +25 C IE = 10mA 3.00 f = 0.1kHz 2.00 f = 1kHz 0.75 10 f = 10kHz IE = 1mA0.50 0.25 IE = 0.1mA00-75 -50 -25 0 25 50 75 100 125 0.01 0.1 1.0 TEMPERATURE (oC) COLLECTOR CURRENT (mA) FIGURE 7. TYPICAL INPUT OFFSET VOLTAGE CHARACTERIS- FIGURE 8. TYPICAL NOISE FIGURE vs COLLECTOR CURRENT TICS FOR DIFFERENTIAL PAIR AND PAIRED ISOLATED TRANSISTORS vs TEMPERATURE 6-18 INPUT OFFSET VOLTAGE (mV) BASE-TO-EMITTER VOLTAGE (V) STATIC FORWARD CURRENT TRANSFER RATIO (hFE) INPUT OFFSET VOLTAGE (mV) BETA RATIO NOISE FIGURE (dB) BASE-TO-EMITTER VOLTAGE (V) INPUT OFFSET CURRENT (µA), VCE = 3V VCE = 3V RS = 1000Ω RS = 10000Ω TA = +25 oC 20 25 TA = +25 oC 15 f = 0.1kHz f = 0.1kHz f = 1kHz 15 f = 1kHz f = 10kHz 10 f = 10kHz000.01 0.1 1 0.01 0.1 1 COLLECTOR CURRENT (mA) COLLECTOR CURRENT (mA) FIGURE 9. TYPICAL NOISE FIGURE vs COLLECTOR CURRENT FIGURE 10. TYPICAL NOISE FIGURE vs COLLECTOR CURRENT VCE = 3V f = 1kHz COMMON EMITTER CIRCUIT, BASE INPUTo TA = +25 oC hFE = 110 hOE TA = +25 C, VCE = 3V, IC = 1mA40 hIE = 3.5kΩ AT h = 1.88 x 10-4h RE 1mAIE hOE = 15.6µmho 3010 hRE 20 gFE h 1.0 FE hRE -10 bFE hIE 0.1 -20 0.01 0.1 1.0 10 0.1 1 10 100 COLLECTOR CURRENT (mA) FREQUENCY (MHz) FIGURE 11. TYPICAL NORMALIZED FORWARD CURRENT FIGURE 12. TYPICAL FORWARD TRANSFER ADMITTANCE vs TRANSFER RATIO, SHORT CIRCUIT INPUT IMPED- FREQUENCY ANCE, OPEN CIRCUIT OUTPUT IMPEDANCE, AND OPEN CIRCUIT REVERSE VOLTAGE TRANSFER RATIO vs COLLECTOR CURRENT 6 COMMON EMITTER CIRCUIT, BASE INPUT COMMON EMITTER CIRCUIT, BASE INPUT 6 TA = +25 oC, VCE = 3V, IC = 1mA T = +25oA C, VCE = 3V, I5 C = 1mA 4 bOE b 3IE22g1IE gOE000.1 1 10 100 0.1 1 10 100 FREQUENCY (MHz) FREQUENCY (MHz) FIGURE 13. TYPICAL INPUT ADMITTANCE vs FREQUENCY FIGURE 14. TYPICAL OUTPUT ADMITTANCE vs FREQUENCY 6-19 INPUT CONDUCTANCE (gIE) NORMALIZED h PARAMETERS NOISE FIGURE (dB) OR SUSCEPTANCE (bIE) (mmhos) OUTPUT CONDUCTANCE (g ) FORWARD TRANSFER CONDUCTANCE (gFE) NOISE FIGURE (dB)OE OR SUSCEPTANCE (bOE) (mmhos) OR SUSCEPTANCE (bFE) (mmhos), COMMON EMITTER CIRCUIT, BASE INPUT

V

T = +25oC, V CE = 3V A CE = 3V, IC = 1mA TA = +25 oC gRE IS SMALL AT FREQUENCIES 900 LESS THAN 500MHz 0 800 -0.5 bRE 600 -1.0 400 -1.5 200 -2.0 1 10 100012345678910 11 12 13 14 FREQUENCY (MHz) COLLECTOR CURRENT (mA) FIGURE 15. TYPICAL REVERSE TRANSFER ADMITTANCE vs FIGURE 16. TYPICAL GAIN BANDWIDTH PRODUCT vs FREQUENCY COLLECTOR CURRENT 6-20 REVERSE TRANSFER CONDUCTANCE (gRE) OR SUSCEPTANCE (bRE) (mmhos) GAIN BANDWIDTH PRODUCT (MHz)]

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