Download: Features Description Applications For applications such as balanced modulators or ring modu-

SEMICONDUCTORCA3039 March 1993 Diode Array Features Description • Six Matched Diodes on a Common Substrate The CA3039 consists of six ultra-fast, low capacitance diodes on a common monolithic substrate. Integrated circuit • Excellent Reverse Recovery Time 1ns Typical construction assures excellent static and dynamic matching • Matched Monolithic Construction of the diodes, making the array extremely useful for a wide - V Matched Within 5mV variety of applications in communication and switching sys-F tems. • Low Diode Capacitance - C = 0.65pF Typical at V = -2V Five of the diodes are independen...
Author: เดชเพียร Shared: 8/19/19
Downloads: 2255 Views: 4834

Content

SEMICONDUCTORCA3039 March 1993 Diode Array

Features Description

• Six Matched Diodes on a Common Substrate The CA3039 consists of six ultra-fast, low capacitance diodes on a common monolithic substrate. Integrated circuit • Excellent Reverse Recovery Time 1ns Typical construction assures excellent static and dynamic matching • Matched Monolithic Construction of the diodes, making the array extremely useful for a wide - V Matched Within 5mV variety of applications in communication and switching sys-F tems. • Low Diode Capacitance - C = 0.65pF Typical at V = -2V Five of the diodes are independently accessible, the sixthD R shares a common terminal with the substrate.

Applications For applications such as balanced modulators or ring modu-

lators where capacitive balance is important, the substrate • Ultra-Fast Low Capacitance Matched Diodes for should be returned to a DC potential which is significantly Applications in Communications and Switching more negative (with respect to the active diodes) than the Systems peak signal applied. • Balanced Modulators or Demodulators

Ordering Information

• Ring Modulators PART TEMPERATURE • High Speed Diode Gates NUMBER RANGE PACKAGE • Analog Switches CA3039 -55oC to +125oC 12 Pin CAN CA3039M -55oC to +125oC 14 Lead SOIC CA3039M96 -55oC to +125oC 14 Lead SOIC* * Denotes Tape and Reel

Pinouts

CA3039 CA3039 (SOIC) (TO-5 CAN) TOP VIEW TOP VIEW 1 14 12 1 11

D

2 5 13 SUBSTRATE 2 D5 10 3 12 D4 D D64 DS D639411 D3 DS D2 D1 5 1048D3 D1 NC69NC57D2678CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures. File Number 343.2 Copyright © Harris Corporation 1993 6-11,

Specifications CA3039 Absolute Maximum Ratings Operating Conditions

Inverse Voltage (PIV) for: D1 - D5 .5V Operating Temperature Range .-55 oC ≤ TA ≤ +125oC D6 .0.5V Storage Temperature Range.-65 oC ≤ TA ≤ +150oC Diode-to-Substrate Voltage (VDI) for D1 - D5 ..+20V, -1V (Terminal 1, 4, 5, 8 or 12 to Terminal 10) DC Forward Current (IF) .25mA Recurrent Forward Current (IF) .100mA Forward Surge Current (IF(SURGE)) .100mA Power Dissipation Any One Diode Unit .100mW Total for Device .600mW For TA > +55 oC ..Derate Linearly 5.7mW/oC Junction Temperature .+175oC Junction Temperature (Plastic Package) .+150oC Lead Temperature (Soldering 10 Sec.).+300oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Electrical Specifications TA = +25oC. Characteristics apply for each diode unit, Unless Otherwise Specified LIMITS

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS DC Forward Voltage Drop (Figure 1) VF IF = 50µA - 0.65 0.69 V IF = 1mA - 0.73 0.78 V IF = 3mA - 0.76 0.80 V IF = 10mA - 0.81 0.90 V DC Reverse Breakdown Voltage V(BR)R IR = -10µA57- V DC Reverse Breakdown Voltage Between Any V(BR)R IR = -10µA 20 - - V Diode Unit and Substrate DC Reverse (Leakage) Current (Figure 2) IR VR = -4V - 0.016 100 nA DC Reverse (Leakage) Current Between Any IR VR = -10V - 0.022 100 nA Diode Unit and Substrate (Figure 3) Magnitude of Diode Offset Voltage (Note 1) VF1 − VF2 IF = 1mA - 0.5 5.0 mV (Figure 1) Temperature Coefficient of |VF1 - VF2| (Figure 4) ∆ V − V IF = 1mA - 1.0 - µV/oCF1 F2 ∆T Temperature Coefficient of Forward Drop ∆V IF = 1mA - -1.9 - mV/oC (Figure 5) F ∆T DC Forward Voltage Drop for Anode-to- VF IF = 1mA - 0.65 - V Substrate Diode (DS) Reverse Recovery Time tRR IF = 10mA, IR = -10mA - 1.0 - ns Diode Resistance (Figure 6) RD f = 1kHz, IF = 1mA 25 30 45 Ω Diode Capacitance (Figure 7) CD VR = -2V, IF = 0 - 0.65 - pF Diode-to-Substrate Capacitance (Figure 8) CDI VDI = 4V, IF = 0 - 3.2 - pF NOTE: 1. Magnitude of Diode Offset Voltage is the difference in DC Forward Voltage Drops of any two diode units. 6-12,

Typical Performance Curves

T oA = +25 C VR = -4V 0.8651FORWARD VOLTAGE DROP (VF) 0.7 4 0.1 0.6 2 0.01 DIODE OFFSET ( VF1 − VF2 ) 1 0.5 0 0.001 0.01 0.1 1 10 -75 -50 -25 0 25 50 75 100 125 DC FORWARD CURRENT (mA) TEMPERATURE (oC) FIGURE 1. DC FORWARD VOLTAGE DROP (ANY DIODE) AND FIGURE 2. DC REVERSE (LEAKAGE) CURRENT (D1 - D5) vs DIODE OFFSET VOLTAGE vs DC FORWARD TEMPERATURE

CURRENT

100 4 VR = -10V IF = 10mA 1 0.7 0.6 0.1 IF = 1mA 0.5 0.01 IF = 0.1mA 0.4 0.001 0.3 -75 -50 -25 0 25 50 75 100 125 -75 -50 -25 0 25 50 75 100 125 TEMPERATURE (oC) TEMPERATURE (oC) FIGURE 3. DC REVERSE (LEAKAGE) CURRENT BETWEEN D1, FIGURE 4. DIODE OFFSET VOLTAGE (ANY DIODE) vs D2, D3, D4, D5 AND SUBSTRATE vs TEMPERATURE TEMPERATURE IF = 1mA TA = +25 oC f = 1kHz 0.9 0.8 100 0.7 0.6 10 0.5 0.4 1 -75 -50 -25 0 25 50 75 100 125 0.01 0.1 1 10 TEMPERATURE (oC) DC FORWARD CURRENT (mA) FIGURE 5. DC FORWARD VOLTAGE DROP (ANY DIODE) vs FIGURE 6. DIODE RESISTANCE (ANY DIODE) vs DC FORWARD TEMPERATURE CURRENT 6-13 DC FORWARD VOLTAGE (V) DC REVERSE CURRENT (nA) DC FORWARD VOLTAGE (V) DIODE OFFSET VOLTAGE (mV) DIODE RESISTANCE (Ω) DC REVERSE CURRENT (nA)DIODE OFFSET VOLTAGE ( VF1 − V (mV)F2 ),

Typical Performance Curves (Continued)

T = +25oAC6I= 0 TA = +25 oC

F

5 IF = 03322110123401234DC REVERSE VOLTAGE ACROSS DIODE (V) DC REVERSE VOLTAGE BETWEEN TERMINALS 1, 4, 5, 8, OR 12 AND SUBSTRATE (TERMINAL 10) (V) FIGURE 7. DIODE CAPACITANCE (D1 - D5) vs REVERSE VOLTAGE FIGURE 8. DIODE-TO-SUBSTRATE CAPACITANCE vs REVERSE

VOLTAGE

6-14 DIODE CAPACITANCE (pF) DIODE TO SUBSTRATE CAPACITANCE (pF)]
15

Similar documents

Features Description
SEMICONDUCTORCA3018 March 1993 General Purpose Transistor Arrays Features Description • Matched Monolithic General Purpose Transistors The CA3018 and CA3018A consist of four general purpose silicon n-p-n transistors on a common monolithic substrate. • hFE Matched ..±10% Two of the four transistors a
Reverse Blocking Thyristors • Glassivated Surface for Reliability and Uniformity 4 AMPERES RMS • Power Rated at Economical Prices 200 thru 600 VOLTS
Preferred Device Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and http://onsemi.com remote control, and warning systems where reliability of operation is important. SCRs • Glassivated Surfac
DISCRETE SEMICONDUCTORS DATA SHEET BZX84 series Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of November 1993 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D088 BZX84 series Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of November 1993 File under Discrete Semiconductors, SC01 FEATURES PINNING • Total power dissipation: PIN DESCRIPTION max. 250 mW 1 anode • Three toler
DISCRETE SEMICONDUCTORS DATA SHEET BZX79 series Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of April 1992 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BZX79 series Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION • Total power dissipation: Low-power voltage regulator diodes in hermetically sealed leaded gl
DISCRETE SEMICONDUCTORS DATA SHEET BZX55 series Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of April 1992 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BZX55 series Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION • Total power dissipation: Low-power voltage regulator diodes in hermetically sealed leaded gl
DISCRETE SEMICONDUCTORS DATA SHEET BZX284 series Voltage regulator diodes Product specification 1995 Dec 13 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D154 BZX284 series Voltage regulator diodes Product specification 1995 Dec 13 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION • Total power dissipation: Low-power voltage regulator diodes in a small ceramic SMD SOD110 package. max
DISCRETE SEMICONDUCTORS DATA SHEET BZW03 series Voltage regulator diodes Product specification 1996 May 14 Supersedes data of April 1992 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BZW03 series Voltage regulator diodes Product specification 1996 May 14 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION construction. This package is hermetically sealed and fatigue free • Glass
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR6040/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR6040/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: Motorola Preferred Device • Ultrafast 100 Nanosecond Recovery Time • 175°C Operating Juncti
Order this document   For Use As A Damper Diode Motorola Preferred Device In High and Very High Resolution Monitors
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR5150E/D For Use As A Damper Diode Motorola Preferred Device In High and Very High Resolution Monitors SCANSWITCH The MUR5150E is a state-of-the-art Ultrafast Power Rectifier specifically RECTIFIER designed for use as a damper diode in horizont
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR490E/D  Ultrafast “E’’ Series with High Reverse Energy Capability
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR490E/D Ultrafast “E’’ Series with High Reverse Energy Capability MUR4100E is a .designed for use in switching power supplies, inverters and as Motorola Preferred Device free wheeling diodes, these state–of–the–art devices have the following fea
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR420/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR420/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • ° MUR420 and MUR460 are175 C Operating
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR3080/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR3080/D Motorola Preferred Device .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 75 ns (Typ) Soft Recovery Time • 175°C Operating Junc
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR3040/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR3040/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: Motorola Preferred Device • Ultrafast 100 Nanosecond Recovery Time • 175°C Operating Juncti
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR3020WT/D  .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features:
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR3020WT/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 and 60 Nanosecond Recovery Time • 175°C Operating Junction Temperature Mot
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR3020PT/D  .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features:
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR3020PT/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 and 60 Nanosecond Recovery Time *Motorola Preferred Devices • 175°C Operat
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR190E/D  Ultrafast “E’’ Series with High Reverse Energy Capability
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR190E/D Ultrafast “E’’ Series with High Reverse Energy Capability .designed for use in switching power supplies, inverters and as MUR1100E is a free wheeling diodes, these state–of–the–art devices have the Motorola Preferred Device following fea
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR1620CTR/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR1620CTR/D .designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Motorola Preferred Device Rectifiers, makes a single phase full–wave bridge. T
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR1620CT/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR1620CT/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 and 60 Nanosecond Recovery Times • 175°C Operating Junction Temperature Mo
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR1520/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR1520/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 and 60 Nanosecond Recovery Time Motorola Preferred Devices • 175°C Operating
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR120/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR120/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • 175°C Operating Junction Temperature M
Order this document   For Use As A Damper Diode Motorola Preferred Device In High and Very High Resolution Monitors
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR10150E/D For Use As A Damper Diode Motorola Preferred Device In High and Very High Resolution Monitors The MUR10150E is a state-of-the-art Power Rectifier specifically designed for use as a SCANSWITCH damper diode in horizontal deflection circ
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR10120E/D  For High and Very High Resolution Monitors
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR10120E/D For High and Very High Resolution Monitors This state–of–the–art power rectifier is specifically designed for Motorola Preferred Device use as a damper diode in horizontal deflection circuits for high and very high resolution monitors.
Order this document SEMICONDUCTOR TECHNICAL DATA by MSRB860–1/D  D2PAK–SL Straight Lead
Order this document SEMICONDUCTOR TECHNICAL DATA by MSRB860–1/D D2PAK–SL Straight Lead SOFT RECOVERY Designed for use as free wheeling diodes in variable speed motor control POWER RECTIFIER applications and other average frequency switching power supplies. These 8.0 AMPERES state–of–the–art devices
Order this document SEMICONDUCTOR TECHNICAL DATA by MSR860/D  Plastic TO–220 Package
Order this document SEMICONDUCTOR TECHNICAL DATA by MSR860/D Plastic TO–220 Package Designed for use as free wheeling diodes in variable speed motor control applications and other average frequency switching power supplies. These SOFT RECOVERY state–of–the–art devices have the following features: P
Order this document SEMICONDUCTOR TECHNICAL DATA by MRS1504T3/D SMB Power Surface Mount Package
Order this document SEMICONDUCTOR TECHNICAL DATA by MRS1504T3/D SMB Power Surface Mount Package Features mesa epitaxial construction with glass passivation. STANDARD RECOVERY Ideally suited for high frequency switching power supplies; free RECTIFIER wheeling diodes and polarity protection diodes. 1.
Order this document SEMICONDUCTOR TECHNICAL DATA by MR850/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MR850/D Axial lead mounted fast recovery power rectifiers are designed for special applications such as dc power supplies, inverters, converters, ultrasonic systems, choppers, low RF interference and free wheeling diodes. A complete line of fast re
Order this document SEMICONDUCTOR TECHNICAL DATA by MR750/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MR750/D • Current Capacity Comparable to Chassis Mounted Rectifiers • Very High Surge Capacity • Insulated Case Mechanical Characteristics: • Case: Epoxy, Molded MR754 and MR760 are Motorola Preferred Devices • Weight: 2.5 grams (approximately) •
Order this document SEMICONDUCTOR TECHNICAL DATA by MR2835S/D  • High Power Capability SUPPRESSOR • Economical 24 V – 32 V
Order this document SEMICONDUCTOR TECHNICAL DATA by MR2835S/D .designed for applications requiring a diode with reverse avalanche characteris- tics for use as reverse power transient suppressor. Developed to suppress transients in the automotive system, this device operates in reverse mode as power
Order this document SEMICONDUCTOR TECHNICAL DATA by MR2535L/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MR2535L/D .designed for applications requiring a low voltage rectifier with reverse avalanche characteristics for use as reverse power transient suppressors. Developed to suppress transients in the automotive system, these devices MEDIUM CURRENT op
Order this document SEMICONDUCTOR TECHNICAL DATA by MGRB2025CT/D  • Planar Epitaxial Construction 20 AMPERES • Nitride Passivation for Stable Blocking Characteristics 250 VOLTS
Order this document SEMICONDUCTOR TECHNICAL DATA by MGRB2025CT/D .ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: GALLIUM ARSENIDE RECTIFIER • Planar Epitaxial Construction 20 AMPE