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SEMICONDUCTORCA3018 March 1993 General Purpose Transistor Arrays Features Description • Matched Monolithic General Purpose Transistors The CA3018 and CA3018A consist of four general purpose silicon n-p-n transistors on a common monolithic substrate. • hFE Matched ..±10% Two of the four transistors are connected in the Darlington • VBE Matched configuration. The substrate is connected to a separate - CA3018A .±2mV terminal for maximum flexibility. - CA3018 .±5mV The transistors of the CA3018 and the CA3018A are well • Operation From DC to 120MHz suited to a wide variety of applications in low p...
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SEMICONDUCTORCA3018 March 1993 General Purpose Transistor Arrays

Features Description

• Matched Monolithic General Purpose Transistors The CA3018 and CA3018A consist of four general purpose silicon n-p-n transistors on a common monolithic substrate. • hFE Matched ..±10% Two of the four transistors are connected in the Darlington • VBE Matched configuration. The substrate is connected to a separate - CA3018A .±2mV terminal for maximum flexibility. - CA3018 .±5mV The transistors of the CA3018 and the CA3018A are well • Operation From DC to 120MHz suited to a wide variety of applications in low power systems • Wide Operating Current Range in the DC through VHF range. They may be used as discrete transistors in conventional circuits but in addition they • CA3018A Performance Characteristics Controlled provide the advantages of close electrical and thermal from 10µA to 10mA matching inherent in integrated circuit construction. • Low Noise Figure ..3.2dB Typical at 1kHz The CA3018A is similar to the CA3018 but features tighteroocontrol of current gain, leakage, and offset parameters• Full Military Temperature Range .-55 C to +125 C making it suitable for more critical applications requiring premium performance.

Applications

• Two Isolated Transistors and a Darlington Connected Ordering Information Transistor Pair for Low Power Applications at Frequencies from DC through the VHF Range PART TEMPERATURE NUMBER RANGE PACKAGE • Custom Designed Differential Amplifiers CA3018 -55oC to +125oC 12 Pin CAN • Temperature Compensated Amplifiers CA3018A -55oC to +125oC 12 Pin CAN • See Application Note, AN5296 “Application of the CA3018 Integrated Circuit Transistor Array” for Suggested Applications

Pinout

CA3018, CA3018A (TO-5 CAN) TOP VIEW 1 11 Q4 2 10 SUBSTRATE 3 Q394Q2 Q1857CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures. File Number 338.2 Copyright © Harris Corporation 1993 6-5,

Specifications CA3018, CA3018A Absolute Maximum Ratings (TA = +25oC) Operating Conditions

CA3018 CA3018A Operating Temperature Range .-55oC ≤ TA ≤ +125oC Collector-to-Emitter Voltage, VCEO .15V 15V Storage Temperature Range.-65 oC ≤ TA ≤ +150oC Collector-to-Base Voltage, VCBO .20V 30V Collector-to-Substrate Voltage, VCIO (Note 1) .20V 40V Emitter-to-Base Voltage, VEBO .5V 5V Collector Current, IC .50mA 50mA Power Dissipation Any One Transistor .300mW Total Package .450mW TA > +85 oC .Derate at 5mW/oC Junction Temperature .+175oC Lead Temperature (Soldering 10 Sec.).+300oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Electrical Specifications T = +25oA C LIMITS

CA3018 CA3018A PARAMETERS SYMBOL TEST CONDITIONS MIN TYP MAX MIN TYP MAX UNITS STATIC CHARACTERISTICS Collector Cutoff Current ICBO VCB = 10V, IE = 0 - 0.002 100 - 0.002 40 nA (Figure 1) Collector Cutoff Current ICEO VCE = 10V, IB = 0 - See 5 - See 0.5 µA (Figure 2) Fig. 2 Fig. 2 Collector Cutoff Current ICEOD VCE = 10V, IB = 0 - - - - - 5 µA Darlington Pair Collector-to-Emitter V(BR)CEO IC = 1mA, IB = 0 15 24 - 15 24 - V Breakdown Voltage Collector-to-Base Breakdown V(BR)CBO IC = 10µA, IE = 0 20 60 - 30 60 - V Voltage Emitter-to-Base Breakdown V(BR)EBO IE = 10µA, IC = 057- 5 7 - V Voltage Collector-to-Substrate V(BR)CIO IC = 10µA, ICI = 0 20 60 - 40 60 - V Breakdown Voltage Collector-to-Emitter VCES IB = 1mA, IC = 10mA - 0.23 - - 0.23 0.5 V Saturation Voltage Static Forward Current hFE VCE = 3V IC = 10mA - 100 - 50 100 - - Transfer Ratio (Note 2) (Figure 3) IC = 1mA 30 100 200 60 100 200 - IC = 10µA - 54 - 30 54 - - Magnitude of Static-Beta VCE = 3V, 0.9 0.97 - 0.9 0.97 - - Ratio (Isolated Transistors Q1 IC1 = IC2 = 1mA and Q2) (Figure 3) Static Forward Current hFED VCE = 3V IC = 1mA 1500 5400 - 2000 5400 - - Transfer Ratio Darlington Pair (Q3 and Q4) (Figure 4) IC = 100µA - - - 1000 2800 - - Base-to-Emitter Voltage VBE VCE = 3V IE = 1mA - 0.715 - 0.600 0.715 0.800 V (Figure 5) IE = 10mA - 0.800 - - 0.800 0.900 V Input Offset Voltage V VCE = 3V, IE = 1mA - 0.48 5 - 0.48 2 mV (Figures 5, 7) BE1−VBE2 6-6,

Specifications CA3018, CA3018A Electrical Specifications TA = +25oC (Continued) LIMITS

CA3018 CA3018A PARAMETERS SYMBOL TEST CONDITIONS MIN TYP MAX MIN TYP MAX UNITS Temperature Coefficient: ∆V VCE = 3V, IE = 1mA - -1.9 - - -1.9 - mV/oC Base-to-Emitter Voltage Q1,

BE

Q2 (Figure 6) ∆T Base (Q3)-to-Emitter (Q4) VBED (V9-1) VCE = 3V IE = 10mA - 1.46 - - 1.46 1.60 V Voltage Darlington Pair (Figure 8) IE = 1mA - 1.32 - 1.10 1.32 1.50 V Temperature Coefficient: ∆V VCE = 3V, IE = 1mA - 4.4 - - 4.4 - mV/ oC Base-to-Emitter Voltage BED Darlington Pair (Q3 and Q4) ∆T (Figure 9) Temperature Coefficient: V − V VCC = 6V, VEE = -6V, - 10 - - 10 - µV/oC Magnitude of Input Offset BE1 BE2 IC1 = IC2 = 1mA Voltage ∆T DYNAMIC CHARACTERISTICS Low Frequency Noise Figure NF f = 1kHz, VCE = 3V, - 3.25 - - 3.25 - dB (Figures 10 - 12) IC = 100µA, Source Resistance = 1kΩ Low Frequency, Small Signal Equivalent Circuit Characteristics Forward Current Transfer hFE f = 1kHz, VCE = 3V, - 110 - - 110 - - Ratio (Figure 13) IC = 1mA Short Circuit Input hIE f = 1kHz, VCE = 3V, - 3.5 - - 3.5 - kΩ Impedance (Figure 13) IC = 1mA Open Circuit Output hOE f = 1kHz, VCE = 3V, - 15.6 - - 15.6 - µmho Impedance (Figure 13) IC = 1mA Open Circuit Reverse hRE f = 1kHz, VCE = 3V, - 1.8 x - - 1.8 x - - Voltage Transfer Ratio IC = 1mA 10 -4 10-4 (Figure 13) Admittance Characteristics Forward Transfer YFE f = 1MHz, VCE = 3V, - 31 - - - 31 - - mmho Admittance (Figure 14) IC = 1mA j1.5 j1.5 Input Admittance YIE f = 1MHz, VCE = 3V, - 0.3 + - - 0.3 + - mmho (Figure 15) IC = 1mA j0.04 j0.04 Output Admittance YOE f = 1MHz, VCE = 3V, - 0.001 - - 0.001 - mmho (Figure 16) IC = 1mA + j0.03 + j0.03 Reverse Transfer YRE f = 1MHz, VCE = 3V, See Figure 17 mmho Admittance (Figure 17) IC = 1mA Gain Bandwidth Product fT VCE = 3V, IC = 3mA 300 500 - 300 500 - MHz (Figure 18) Emitter-to-Base Capacitance CEB VEB = 3V, IE = 0 - 0.6 - - 0.6 - pF Collector-to-Base Capacitance CCB VCB = 3V, IC = 0 - 0.58 - - 0.58 - pF Collector-to-Substrate CCI VCI = 3V, IC = 0 - 2.8 - - 2.8 - pF Capacitance NOTE: 1. The collector of each transistor of the CA3018 and CA3018A is isolated from the substrate by an integral diode. The substrate (Terminal 10) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action. 2. Actual forcing current is via the emitter for this test. 6-7,

Typical Performance Curves

102 10 I = 0 IB = 0E 10 10 VCB = 15V VCE = 10V VCB = 10V 10 1 VCB = 5V VCE = 5V 10-1 1 10-2 10 -1 -3 10-210 10-4 10 -3 0 25 50 75 100 125 0 25 50 75 100 125 AMBIENT TEMPERATURE (oC) AMBIENT TEMPERATURE (oC) FIGURE 1. TYPICAL COLLECTOR-TO-BASE CUTOFF CURRENT FIGURE 2. TYPICAL COLLECTOR-TO-EMITTER CUTOFF vs TEMPERATURE CURRENT vs TEMPERATURE 120 1.1 VCE = 3V 8000 TA = +25 oC VCE = 3V h 7000 TA = +25 oC

FE

100 1 6000 90 5000hhFE1ORFE24000 80 h hFE2FE10.9 60 0.8 1000 50 0 0.01 0.1 1 10 0.1 1 10 EMITTER CURRENT (mA) EMITTER CURRENT (mA) FIGURE 3. TYPICAL STATIC FORWARD CURRENT TRANSFER FIGURE4. TYPICAL STATIC FORWARD CURRENT - TRANSFER RATIO AND BETA RATIO FOR TRANSISTORS Q1 RATIO FOR DARLINGTON CONNECTED AND Q2 vs EMITTER CURRENT TRANSISTORS Q3 AND Q4 vs EMITTER CURRENT 0.8 4 VCE = 3V VCE = 3V TA = +25 oC 1.0 0.73V0.9BE 0.8 0.6 2 0.7 IE = 3mA 0.6 0.5 1 IE = 1mAVI= 0.5mAIO = |VBE1 - VBE2| 0.5 E 0.4 0 0.4 0.01 0.1 1.0 10 -75 -50 -25 0 25 50 75 100 125 EMITTER CURRENT (mA) AMBIENT TEMPERATURE (oC) FIGURE 5. TYPICAL STATIC BASE-TO-EMITTER VOLTAGE FIGURE 6. TYPICAL BASE-TO-EMITTER VOLTAGE CHARACTERISTIC AND INPUT OFFSET VOLTAGE CHARACTERISTIC FOR EACH TRANSISTOR vs FOR Q1 AND Q2 vs EMITTER CURRENT TEMPERATURE 6-8 BASE-TO-EMITTER VOLTAGE (V) STATIC FORWARD CURRENT TRANSFER RATIO (hFE) COLLECTOR CUTOFF CURRENT (nA) INPUT OFFSET VOLTAGE Q1 AND Q2 (mV) BETA RATIO STATIC FORWARD CURRENT COLLECTOR CUTOFF CURRENT (nA) BASE-TO-EMITTER VOLTAGE (V) TRANSFER RATIO FOR DARLINGTON PAIR (hFED),

Typical Performance Curves (Continued)

1.7 5 VCE = 3V VCE = 3V TA = +25 oC 4 IE = 10mA 1.6 1.5 0.75 IE = 1mA 1.4 0.50 1.3 0.25 IE = 0.1mA 0 1.2 -75 -50 -25 0 25 50 75 100 125 0.1 1 10 AMBIENT TEMPERATURE (oC) EMITTER CURRENT (mA) FIGURE 7. TYPICAL OFFSET VOLTAGE CHARACTERISTIC vs FIGURE8. TYPICAL STATIC INPUT VOLTAGE CHARACTERISTIC TEMPERATURE FOR DARLINGTON PAIR (Q3 AND Q4) vs EMITTER

CURRENT

2 VCE = 3V VCE = 3V RS = 500Ω IE = 3mA T = +25 oC 1.75 20

A

IE = 1mA f = 0.1kHz 1.50 15 f = 1kHz IE = 0.5mA 1.25 10 f = 10kHz 0.75 -75 -50 -25 0 25 50 75 100 125 00.01 0.1 1 AMBIENT TEMPERATURE (oC) COLLECTOR CURRENT (mA) FIGURE9. TYPICAL STATIC INPUT VOLTAGE CHARACTERISTIC FIGURE 10. NOISE FIGURE vs COLLECTOR CURRENT, RS = 500Ω FOR DARLINGTON PAIR (Q3 AND Q4) vs

TEMPERATURE

VCE = 3V 30 R VCE = 3VS = 1000Ω o RS = 10000ΩTA = +25 C20 25 TA = +25oC f = 0.1kHz 20 15 f = 0.1kHz f = 1kHz 15 f = 1kHz f = 10kHz 10 f = 10kHz000.01 0.1 1 0.01 0.1 1 COLLECTOR CURRENT (mA) COLLECTOR CURRENT (mA) FIGURE 11. NOISE FIGURE vs COLLECTOR CURRENT, RS = 1kΩ FIGURE 12. NOISE FIGURE vs COLLECTOR CURRENT, RS = 10kΩ 6-9 NOISE FIGURE (dB) BASE-TO-EMITTER VOLTAGE OFFSET VOLTAGE (mV) FOR DARLINGTON PAIR (V) NOISE FIGURE (dB) NOISE FIGURE (dB) BASE-TO-EMITTER VOLTAGE FOR DARLINGTON PAIR (V),

Typical Performance Curves (Continued)

VCE = 3V COMMON EMITTER CIRCUIT, BASE INPUT f = 1kHz T = +25oC, V = 3V, I = 1mA T = +25oA C hFE = 110 hOE 40 A CE C hIE = 3.5kΩ AT h hRE = 1.88 x 10 -4 1mA IE h = 15.6µmho 30 10 OE hRE 20 gFE h 1.0 FE hRE -10 bFE hIE 0.1 -20 0.01 0.1 1.0 10 0.1 1 10 100 COLLECTOR CURRENT (mA) FREQUENCY (MHz) FIGURE 13. h PARAMETERS vs COLLECTOR CURRENT FIGURE 14. FORWARD TRANSFER ADMITTANCE (YFE) 6 COMMON EMITTER CIRCUIT, BASE INPUT COMMON EMITTER CIRCUIT, BASE INPUT 6 TA = +25 oC, VCE = 3V, IC = 1mA TA = +25 oC, VCE = 3V, IC = 1mA5544bOE33bIE2211gIE gOE000.1 1 10 100 0.1 1 10 100 FREQUENCY (MHz) FREQUENCY (MHz) FIGURE 15. INPUT ADMITTANCE (YIE) FIGURE 16. OUTPUT ADMITTANCE (YOE) COMMON EMITTER CIRCUIT, BASE INPUT o VCE = 3VTA = +25 C, VCE = 3V, IC = 1mA TA = +25 oC gRE IS SMALL AT FREQUENCIES LESS THAN 500MHz 900 0 800 b -0.5 RE 600 -1.0 400 -1.5 200 -2.0 1 10 100012345678910 11 12 13 14 FREQUENCY (MHz) COLLECTOR CURRENT (mA) FIGURE 17. REVERSE TRANSFER ADMITTANCE (YRE) FIGURE 18. TYPICAL GAIN BANDWIDTH PRODUCT (fT) vs COLLECTOR CURRENT 6-10 REVERSE TRANSFER CONDUCTANCE (g ) INPUT CONDUCTANCE (gIE) NORMALIZED h PARAMETERSRE OR SUSCEPTANCE (bRE) (mmhos) OR SUSCEPTANCE (bIE) (mmhos) GAIN BANDWIDTH PRODUCT (MHz) OUTPUT CONDUCTANCE (gOE) FORWARD TRANSFER CONDUCTANCE (gFE) OR SUSCEPTANCE (bOE) (mmhos) OR SUSCEPTANCE (bFE) (mmhos)]
15

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