Download: Reverse Blocking Thyristors • Glassivated Surface for Reliability and Uniformity 4 AMPERES RMS • Power Rated at Economical Prices 200 thru 600 VOLTS

Preferred Device Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and http://onsemi.com remote control, and warning systems where reliability of operation is important. SCRs • Glassivated Surface for Reliability and Uniformity 4 AMPERES RMS • Power Rated at Economical Prices 200 thru 600 VOLTS • Practical Level Triggering and Holding Characteristics • Flat, Rugged, Thermopad Construction for Low Thermal Resistance, G High Heat Dissipation and Durability • A KSensitive Gate Triggering • Dev...
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Preferred Device

Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer

applications such as temperature, light, and speed control; process and http://onsemi.com remote control, and warning systems where reliability of operation is important. SCRs • Glassivated Surface for Reliability and Uniformity 4 AMPERES RMS • Power Rated at Economical Prices 200 thru 600 VOLTS • Practical Level Triggering and Holding Characteristics • Flat, Rugged, Thermopad Construction for Low Thermal Resistance,

G High Heat Dissipation and Durability

• A KSensitive Gate Triggering • Device Marking: Device Type, e.g., C106B, Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off–State Voltage(1) VDRM, Volts (Sine Wave, 50–60 Hz, RGK = 1 kΩ, VRRM TC = –40° to 110°C) C106B 200 3 C106D, C106D1 40021C106M, C106M1 600 On-State RMS Current I TO–225AAT(RMS) 4.0 Amps (180° Conduction Angles, T (formerly TO–126)C = 80°C) CASE 077 Average On–State Current IT(AV) 2.55 Amps STYLE 2 (180° Conduction Angles, TC = 80°C) Peak Non-Repetitive Surge Current ITSM 20 Amps PIN ASSIGNMENT (1/2 Cycle, Sine Wave, 60 Hz, 1 Cathode TJ = +110°C) 2 Anode Circuit Fusing Considerations (t = 8.3 ms) I2t 1.65 A2s 3 Gate Forward Peak Gate Power PGM 0.5 Watt (Pulse Width 1.0 µsec, TC = 80°C) Forward Average Gate Power PG(AV) 0.1 Watt ORDERING INFORMATION (Pulse Width 1.0 µsec, TC = 80°C) Device Package Shipping Forward Peak Gate Current IGM 0.2 Amp (Pulse Width 1.0 µsec, TC = 80°C) C106B TO225AA 500/Box Operating Junction Temperature Range TJ –40 to °C C106D TO225AA 500/Box +110 C106D1 TO225AA 500/Box Storage Temperature Range Tstg –40 to °C +150 C106M TO225AA 500/Box Mounting Torque(2) — 6.0 in. lb. C106M1 TO225AA 500/Box (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall Preferred devices are recommended choices for future use not be applied concurrent with negative potential on the anode. Blocking and best overall value. voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. (2) Torque rating applies with use of compression washer (B52200F006). Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Anode lead and heatsink contact pad are common. Semiconductor Components Industries, LLC, 2000 1 Publication Order Number: May, 2000 – Rev. 3 C106/D, THERMAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 3.0 °C/W Thermal Resistance, Junction to Ambient RθJA 75 °C/W Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current IDRM, IRRM (VAK = Rated VDRM or VRRM, RGK = 1000 Ohms) TJ = 25°C — — 10 µA TJ = 110°C — — 100 µA ON CHARACTERISTICS Peak Forward On–State Voltage(1) VTM — — 2.2 Volts (IFM = 1 A Peak for C106B, D, & M) (IFM = 4 A Peak for C106D1, & M1) Gate Trigger Current (Continuous dc)(2) IGT µA (VAK = 6 Vdc, RL = 100 Ohms) TJ = 25°C — 15 200 TJ = –40°C — 35 500 Peak Reverse Gate Voltage (IGR = 10 µA) VGRM — — 6.0 Volts Gate Trigger Voltage (Continuous dc)(2) VGT Volts (VAK = 6 Vdc, RL = 100 Ohms) TJ = 25°C 0.4 .60 0.8 TJ = –40°C 0.5 .75 1.0 Gate Non–Trigger Voltage (Continuous dc)(2) VGD 0.2 — — Volts (VAK = 12 V, RL = 100 Ohms, TJ = 110°C) Latching Current IL mA (VAK = 12 V, IG = 20 mA) TJ = 25°C — .20 5.0 TJ = –40°C — .35 7.0 Holding Current (VD = 12 Vdc) IH mA (Initiating Current = 20 mA, Gate Open) TJ = 25°C — .19 3.0 TJ = –40°C — .33 6.0 TJ = +110°C — .07 2.0 DYNAMIC CHARACTERISTICS Critical Rate–of–Rise of Off–State Voltage dv/dt — 8.0 — V/µs (VAK = Rated VDRM, Exponential Waveform, RGK = 1000 Ohms, TJ = 110°C) (1) Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. (2) RGK is not included in measurement.,

Voltage Current Characteristic of SCR

+ Current Anode + Symbol Parameter VTM VDRM Peak Repetitive Off State Forward Voltage on state IDRM Peak Forward Blocking Current IH VRRM Peak Repetitive Off State Reverse Voltage IRRM at VRRM IRRM Peak Reverse Blocking Current VTM Peak On State Voltage + Voltage IH Holding Current Reverse Blocking Region IDRM at VDRM (off state) Forward Blocking Region Reverse Avalanche Region (off state) Anode – 110 10 JUNCTION TEMPERATURE ≈ 110°C 90 8

DC

80 HALF SINE WAVE RESISTIVE OR INDUCTIVE LOAD 70 6 50 TO 400Hz.

DC

50 4 HALF SINE WAVE 40 RESISTIVE OR INDUCTIVE LOAD. 30 50 to 400 Hz 2 1000.4 .8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 0 .4 .8 1.2 1.6 2.0 2.4 2.6 3.2 3.6 4.0 IT(AV) AVERAGE ON-STATE CURRENT (AMPERES) IT(AV) AVERAGE ON-STATE CURRENT (AMPERES) Figure 1. Average Current Derating Figure 2. Maximum On–State Power Dissipation TC , CASE TEMPERATURE ( ° C) P( A V ), AVERAGE ON-STATE POWER DISSIPATION (WATTS), 100 1000 10 100 1 10 –40 –25 –10 5 20 35 50 65 80 95 110 –40 –25 –10 5 20 35 50 65 80 95 110 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 3. Typical Gate Trigger Current versus Figure 4. Typical Holding Current versus Junction Temperature Junction Temperature 1.0 1000 0.9 0.8 0.7 0.6 100 0.5 0.4 0.3 0.2 10 –45 –25 –10 5 20 35 50 65 80 95 110 –40 –25 –10 5 20 35 50 65 80 95 110 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 5. Typical Gate Trigger Voltage versus Figure 6. Typical Latching Current versus Junction Temperature Junction Temperature VGT, GATE TRIGGER VOLTAGE (V) IGT, GATE TRIGGER CURRENT ( A) IL, LATCHING CURRENT ( A) IH, HOLDING CURRENT ( A),

Package Interchangeability The dimensional diagrams below compare the critical dimensions of the ON Semiconductor C-106 package with competitive devices. It has been demonstrated that the smaller dimensions of

the ON Semiconductor package make it compatible in most lead-mount and chassis-mount applications. The user is advised to compare all critical dimensions for mounting compatibility. _.4_0_0_ _.2_9_5_ .305 _.115 .360 _ _.0_9_5_ .130 _.1_3_5_ _.1_2_7_ DIA _.1_4_5_ .105 .115 .123 _.0_2_6_ .155 .019 _.1_4_8_ .158 _.5_2_0_ _.4_2_5_ 5 TYP .480 .435123_.3_8_5_ _.3_1_5_ .365 .285 _.0_5_0_ .095 _.5_7_5_ .655 _.4_2_0_ .400 _.1_0_5_ _.0_1_5_ _.1_0_5_ .095 .040 .025 .095 _.1_9_0_ .094 BSC .170_.0_4_5_ _.0_5_4_ _.0_2_5_ .055 .046 .035 _.0_2_0_ .026

ON Semiconductor C-106 Package Competitive C-106 Package

,

PACKAGE DIMENSIONS TO–225AA

(formerly TO–126)

CASE 077–09 ISSUE W

–B–

F NOTES:U C 1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

Q 2. CONTROLLING DIMENSION: INCH.M

–A– INCHES MILLIMETERS DIM MIN MAX MIN MAX123A0.425 0.435 10.80 11.04 B 0.295 0.305 7.50 7.74 C 0.095 0.105 2.42 2.66

H D 0.020 0.026 0.51 0.66 K F 0.115 0.130 2.93 3.30

G 0.094 BSC 2.39 BSC H 0.050 0.095 1.27 2.41 J 0.015 0.025 0.39 0.63 K 0.575 0.655 14.61 16.63

VJM5TYP 5 TYP

Q 0.148 0.158 3.76 4.01

GRR0.045 0.065 1.15 1.65 S 0.25 (0.010) MAMBMS0.025 0.035 0.64 0.88U 0.145 0.155 3.69 3.93 D V 0.040 ––– 1.02 –––2 PL

0.25 (0.010) MAMBMSTYLE 2: PIN 1. CATHODE 2. ANODE 3. GATE,

Notes

, ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

NORTH AMERICA Literature Fulfillment: CENTRAL/SOUTH AMERICA: Literature Distribution Center for ON Semiconductor Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST) P.O. Box 5163, Denver, Colorado 80217 USA Email: ONlit–email is hidden Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support Email: email is hidden Phone: 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time) Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada Toll Free from Hong Kong & Singapore: 001–800–4422–3781 N. American Technical Support: 800–282–9855 Toll Free USA/Canada Email: ONlit–email is hidden EUROPE: LDC for ON Semiconductor – European Support JAPAN: ON Semiconductor, Japan Customer Focus Center German Phone: (+1) 303–308–7140 (M–F 1:00pm to 5:00pm Munich Time) 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Email: ONlit–email is hidden Phone: 81–3–5740–2745 French Phone: (+1) 303–308–7141 (M–F 1:00pm to 5:00pm Toulouse Time) Email: email is hidden Email: ONlit–email is hidden English Phone: (+1) 303–308–7142 (M–F 12:00pm to 5:00pm UK Time) ON Semiconductor Website: http://onsemi.com Email: email is hidden EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781 For additional information, please contact your local *Available from Germany, France, Italy, England, Ireland Sales Representative. http://onsemi.com C106/D]
15

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