Download: DISCRETE SEMICONDUCTORS DATA SHEET BZX84 series Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of November 1993 File under Discrete Semiconductors, SC01

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D088 BZX84 series Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of November 1993 File under Discrete Semiconductors, SC01 FEATURES PINNING • Total power dissipation: PIN DESCRIPTION max. 250 mW 1 anode • Three tolerance series: ±1%, ±2% ± 2 not connectedand 5% 3 cathode • Working voltage range: nom. 2.4 to 75 V (E24 range) • Non-repetitive peak reverse power dissipation: max. 40 W. APPLICATIONS handbook, halfpag2e 1 • General regulation functions. 2 1 DESCRIPTION n.c. Low-power voltage regulator diodes 3 in sm...
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DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, halfpage M3D088

BZX84 series Voltage regulator diodes

Product specification 1996 Apr 26 Supersedes data of November 1993 File under Discrete Semiconductors, SC01, FEATURES PINNING • Total power dissipation: PIN DESCRIPTION max. 250 mW 1 anode • Three tolerance series: ±1%, ±2% ± 2 not connectedand 5% 3 cathode • Working voltage range: nom. 2.4 to 75 V (E24 range) • Non-repetitive peak reverse power dissipation: max. 40 W.

APPLICATIONS

handbook, halfpag2e 1 • General regulation functions. 2 1 DESCRIPTION n.c. Low-power voltage regulator diodes 3 in small plastic SMD SOT23 3 packages. Top view MAM243 The diodes are available in the normalized E24 ±1% (BZX84-A), ±2% (BZX84-B) and ±5% (BZX84-C) tolerance range. The series consists of 37 types with nominal working Fig.1 Simplified outline (SOT23) and symbol. voltages from 2.4 to 75 V. 1996 Apr 26 2,

MARKING

TYPE MARKING TYPE MARKING TYPE MARKING TYPE MARKING NUMBER CODE NUMBER CODE NUMBER CODE NUMBER CODE Marking codes for BZX84-C2V4 to BZX84-C75 BZX84-C2V4 Z11 BZX84-C6V2 Z4p BZX84-C16 Y5p BZX84-C43 Y15 BZX84-C2V7 Z12 BZX84-C6V8 Z5p BZX84-C18 Y6p BZX84-C47 Y16 BZX84-C3V0 Z13 BZX84-C7V5 Z6p BZX84-C20 Y7p BZX84-C51 Y17 BZX84-C3V3 Z14 BZX84-C8V2 Z7p BZX84-C22 Y8p BZX84-C56 Y18 BZX84-C3V6 Z15 BZX84-C9V1 Z8p BZX84-C24 Y9p BZX84-C62 Y19 BZX84-C3V9 Z16 BZX84-C10 Z9p BZX84-C27 Y10 BZX84-C68 Y20 BZX84-C4V3 Z17 BZX84-C11 Y1p BZX84-C30 Y11 BZX84-C75 Y21 BZX84-C4V7 Z1p BZX84-C12 Y2p BZX84-C33 Y12 − − BZX84-C5V1 Z2p BZX84-C13 Y3p BZX84-C36 Y13 − − BZX84-C5V6 Z3p BZX84-C15 Y4p BZX84-C39 Y14 − − Marking codes for BZX84-B2V4 to BZX84-B75 BZX84-B2V4 Z50 BZX84-B6V2 Z60 BZX84-B16 Z70 BZX84-B43 Z80 BZX84-B2V7 Z51 BZX84-B6V8 Z61 BZX84-B18 Z71 BZX84-B47 Z81 BZX84-B3V0 Z52 BZX84-B7V5 Z62 BZX84-B20 Z72 BZX84-B51 Z82 BZX84-B3V3 Z53 BZX84-B8V2 Z63 BZX84-B22 Z73 BZX84-B56 Z83 BZX84-B3V6 Z54 BZX84-B9V1 Z64 BZX84-B24 Z74 BZX84-B62 Z84 BZX84-B3V9 Z55 BZX84-B10 Z65 BZX84-B27 Z75 BZX84-B68 Z85 BZX84-B4V3 Z56 BZX84-B11 Z66 BZX84-B30 Z76 BZX84-B75 Z86 BZX84-B4V7 Z57 BZX84-B12 Z67 BZX84-B33 Z77 − − BZX84-B5V1 Z58 BZX84-B13 Z68 BZX84-B36 Z78 − − BZX84-B5V6 Z59 BZX84-B15 Z69 BZX84-B39 Z79 − − Marking codes for BZX84-A2V4 to BZX84-A75 BZX84-A2V4 Y50 BZX84-A6V2 Y60 BZX84-A16 Y70 BZX84-A43 Y80 BZX84-A2V7 Y51 BZX84-A6V8 Y61 BZX84-A18 Y71 BZX84-A47 Y81 BZX84-A3V0 Y52 BZX84-A7V5 Y62 BZX84-A20 Y72 BZX84-A51 Y82 BZX84-A3V3 Y53 BZX84-A8V2 Y63 BZX84-A22 Y73 BZX84-A56 Y83 BZX84-A3V6 Y54 BZX84-A9V1 Y64 BZX84-A24 Y74 BZX84-A62 Y84 BZX84-A3V9 Y55 BZX84-A10 Y65 BZX84-A27 Y75 BZX84-A68 Y85 BZX84-A4V3 Y56 BZX84-A11 Y66 BZX84-A30 Y76 BZX84-A75 Y86 BZX84-A4V7 Y57 BZX84-A12 Y67 BZX84-A33 Y77 − − BZX84-A5V1 Y58 BZX84-A13 Y68 BZX84-A36 Y78 − − BZX84-A5V6 Y59 BZX84-A15 Y69 BZX84-A39 Y79 − − 1996 Apr 26 3, LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IF continuous forward current − 200 mA IZSM non-repetitive peak reverse current tp = 100 µs; square wave; see Tables Tj = 25 °C prior to surge 1 and 2 Ptot total power dissipation Tamb = 25 °C; note 1 − 250 mW PZSM non-repetitive peak reverse power tp = 100 µs; square wave; − 40 W dissipation Tj = 25 °C prior to surge; see Fig.2 Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C Note 1. Device mounted on an FR4 printed circuit-board. ELECTRICAL CHARACTERISTICS Total BZX84-A and B and C series Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage IF = 10 mA; see Fig.3 0.9 V IR reverse current BZX84-A/B/C2V4 VR = 1 V 50 µA BZX84-A/B/C2V7 VR = 1 V 20 µA BZX84-A/B/C3V0 VR = 1 V 10 µA BZX84-A/B/C3V3 VR = 1V5µA BZX84-A/B/C3V6 VR = 1V5µA BZX84-A/B/C3V9 VR = 1V3µA BZX84-A/B/C4V3 VR = 1V3µA BZX84-A/B/C4V7 VR = 2V3µA BZX84-A/B/C5V1 VR = 2V2µA BZX84-A/B/C5V6 VR = 2V1µA BZX84-A/B/C6V2 VR = 4V3µA BZX84-A/B/C6V8 VR = 4V2µA BZX84-A/B/C7V5 VR = 5V1µA BZX84-A/B/C8V2 VR = 5 V 700 nA BZX84-A/B/C9V1 VR = 6 V 500 nA BZX84-A/B/C10 VR = 7 V 200 nA BZX84-A/B/C11 VR = 8 V 100 nA BZX84-A/B/C12 VR = 8 V 100 nA BZX84-A/B/C13 VR = 8 V 100 nA BZX84-A/B/C15 to 75 VR = 0.7VZnom 50 nA 1996 Apr 26 4, 1996 Apr 26 5 Table 1 Per type BZX84-A/B/C2V4 to A/B/C24 Tj = 25 °C; unless otherwise specified. WORKING VOLTAGE DIFFERENTIAL TEMP. COEFF. DIODE CAP. NON-REPETITIVE VZ (V) RESISTANCE SZ (mV/K) Cd (pF) PEAK REVERSE BZX84-A at IZtest = 5 mA rdif (Ω) at IZtest = 5 mA at f = 1 MHz; CURRENT or B or C (see Figs 4 and 5) VR = 0 V IZSM (A) at at XXX Tol. ±1% (A) Tol. ±2% (B) Tol. ±5% (C) at tp = 100 µs; IZtest = 1 mA IZtest = 5 mA Tamb = 25 °C MIN. MAX. MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX. 2V4 2.37 2.43 2.35 2.45 2.2 2.6 275 600 70 100 −3.5 −1.6 0 450 6.0 2V7 2.67 2.73 2.65 2.75 2.5 2.9 300 600 75 100 −3.5 −2.0 0 450 6.0 3V0 2.97 3.03 2.94 3.06 2.8 3.2 325 600 80 95 −3.5 −2.1 0 450 6.0 3V3 3.26 3.34 3.23 3.37 3.1 3.5 350 600 85 95 −3.5 −2.4 0 450 6.0 3V6 3.56 3.64 3.53 3.67 3.4 3.8 375 600 85 90 −3.5 −2.4 0 450 6.0 3V9 3.86 3.94 3.82 3.98 3.7 4.1 400 600 85 90 −3.5 −2.5 0 450 6.0 4V3 4.25 4.35 4.21 4.39 4.0 4.6 410 600 80 90 −3.5 −2.5 0 450 6.0 4V7 4.65 4.75 4.61 4.79 4.4 5.0 425 500 50 80 −3.5 −1.4 0.2 300 6.0 5V1 5.04 5.16 5.00 5.20 4.8 5.4 400 480 40 60 −2.7 −0.8 1.2 300 6.0 5V6 5.54 5.66 5.49 5.71 5.2 6.0 80 400 15 40 −2.0 1.2 2.5 300 6.0 6V2 6.13 6.27 6.08 6.32 5.8 6.6 40 150 6 10 0.4 2.3 3.7 200 6.0 6V8 6.73 6.87 6.66 6.94 6.4 7.2 30 80 6 15 1.2 3.0 4.5 200 6.0 7V5 7.42 7.58 7.35 7.65 7.0 7.9 30 80 6 15 2.5 4.0 5.3 150 4.0 8V2 8.11 8.29 8.04 8.36 7.7 8.7 40 80 6 15 3.2 4.6 6.2 150 4.0 9V1 9.00 9.20 8.92 9.28 8.5 9.6 40 100 6 15 3.8 5.5 7.0 150 3.0 10 9.90 10.10 9.80 10.20 9.4 10.6 50 150 8 20 4.5 6.4 8.0 90 3.0 11 10.80 11.11 10.80 11.20 10.4 11.6 50 150 10 20 5.4 7.4 9.0 85 2.5 12 11.88 12.12 11.80 12.20 11.4 12.7 50 150 10 25 6.0 8.4 10.0 85 2.5 13 12.87 13.13 12.70 13.30 12.4 14.1 50 170 10 30 7.0 9.4 11.0 80 2.5 15 14.85 15.15 14.70 15.30 13.8 15.6 50 200 10 30 9.2 11.4 13.0 75 2.0 16 15.84 16.16 15.70 16.30 15.3 17.1 50 200 10 40 10.4 12.4 14.0 75 1.5 18 17.82 18.18 17.60 18.40 16.8 19.1 50 225 10 45 12.4 14.4 16.0 70 1.5 20 19.80 20.20 19.60 20.40 18.8 21.2 60 225 15 55 14.4 16.4 18.0 60 1.5 22 21.78 22.22 21.60 22.40 20.8 23.3 60 250 20 55 16.4 18.4 20.0 60 1.25 24 23.76 24.24 23.50 24.50 22.8 25.6 60 250 25 70 18.4 20.4 22.0 55 1.25, 1996 Apr 26 6 Table 2 Per type BZX84-A/B/C27 to A/B/C75 Tj = 25 °C; unless otherwise specified. WORKING VOLTAGE DIFFERENTIAL TEMP. COEFF. DIODE CAP. NON-REPETITIVE VZ (V) RESISTANCE SZ (mV/K) Cd (pF) PEAK REVERSE BZX84-A at IZtest = 2 mA rdif (Ω) at IZtest = 2 mA at f = 1 MHz CURRENT or B or C (see Figs 4 and 5) ; IZSM (A) at at XXX Tol. ±1% (A) Tol. ±2% (B) Tol. ±5% (C) VR = 0 V at tp = 100 µs; IZtest = 0.5 mA IZtest = 2 mA Tamb = 25 °C MIN. MAX. MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX. 27 26.73 27.27 26.50 27.50 25.1 28.9 65 300 25 80 21.4 23.4 25.3 50 1.0 30 29.70 30.30 29.40 30.60 28.0 32.0 70 300 30 80 24.4 26.6 29.4 50 1.0 33 32.67 33.33 32.30 33.70 31.0 35.0 75 325 35 80 27.4 29.7 33.4 45 0.9 36 35.64 36.36 35.30 36.70 34.0 38.0 80 350 35 90 30.4 33.0 37.4 45 0.8 39 38.61 39.39 38.20 39.80 37.0 41.0 80 350 40 130 33.4 36.4 41.2 45 0.7 43 42.57 43.43 42.10 43.90 40.0 46.0 85 375 45 150 37.6 41.2 46.6 40 0.6 47 46.53 47.47 46.10 47.90 44.0 50.0 85 375 50 170 42.0 46.1 51.8 40 0.5 51 50.49 51.51 50.00 52.00 48.0 54.0 90 400 60 180 46.6 51.0 57.2 40 0.4 56 55.44 56.56 54.90 57.10 52.0 60.0 100 425 70 200 52.2 57.0 63.8 40 0.3 62 61.38 62.62 60.80 63.20 58.0 66.0 120 450 80 215 58.8 64.4 71.6 35 0.3 68 67.32 68.68 66.60 69.40 64.0 72.0 150 475 90 240 65.6 71.7 79.8 35 0.25 75 74.25 75.75 73.50 76.50 70.0 79.0 170 500 95 255 73.4 80.2 88.6 35 0.2, THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point 330 K/W Rth j-a thermal resistance from junction to ambient note 1 500 K/W Note 1. Device mounted on an FR4 printed circuit-board. 1996 Apr 26 7, GRAPHICAL DATA 3 MBG801 MBG78110 300 handbook, halfpage handbook, halfpage P IZSM F (W) (mA) 102 200 (1) 10 100 (2) 1 0 10−1 1 duration (ms) 10 0.6 0.8 V (V) 1.0F (1) Tj = 25 °C (prior to surge). (2) Tj = 150 °C (prior to surge). Tj = 25 °C. Fig.2 Maximum permissible non-repetitive peak reverse power dissipation Fig.3 Forward current as a function of forward versus duration. voltage; typical values. MBG783 MBG782 0 10 handbook, halfpage handbook, halfpage SZ SZ 11 (mV/K) 4V3 (mV/K) 9V1 −1 5 3V9 8V2 7V5 3V6 6V8 6V2 5V6 5V1 −2 3V3 0 3V0 4V7 2V4 2V7 −3 −5 0 20 40 I (mA) 6004812 16 20Z IZ (mA) BZX84-A/B/C2V4 to A/B/C4V3. BZX84-A/B/C4V7 to A/B/C12. Tj = 25 to 150 °C. Tj = 25 to 150 °C. Fig.4 Temperature coefficient as a function of Fig.5 Temperature coefficient as a function of working current; typical values. working current; typical values. 1996 Apr 26 8, PACKAGE OUTLINE 3.0 handbook, full pagewidth 2.8

B

1.9 0.150 0.55 0.090 0.95 A 0.2MA0.4521o0.1 10 max 2.5 max 1.4 1.2 max 10 o max 1.1 0.48 max 30 o 0.38 0.1MABMBC846 max TOP VIEW Dimensions in mm. Fig.6 SOT23.

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Apr 26 9]
15

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