Download: DISCRETE SEMICONDUCTORS DATA SHEET BZX79 series Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of April 1992 File under Discrete Semiconductors, SC01

DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BZX79 series Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION • Total power dissipation: Low-power voltage regulator diodes in hermetically sealed leaded glass max. 500 mW SOD27 (DO-35) packages. The diodes are available in the normalized E24 • Four tolerance series: ±1%, ±2%, ±1% (BZX79-A), ±2% (BZX79-B), ±3% (BZX79-F) and ±5% (BZX79-C) ±3% and ±5% tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. • Worki...
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DISCRETE SEMICONDUCTORS

DATA SHEET

M3D176

BZX79 series Voltage regulator diodes

Product specification 1996 Apr 26 Supersedes data of April 1992 File under Discrete Semiconductors, SC01, FEATURES DESCRIPTION • Total power dissipation: Low-power voltage regulator diodes in hermetically sealed leaded glass max. 500 mW SOD27 (DO-35) packages. The diodes are available in the normalized E24 • Four tolerance series: ±1%, ±2%, ±1% (BZX79-A), ±2% (BZX79-B), ±3% (BZX79-F) and ±5% (BZX79-C) ±3% and ±5% tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. • Working voltage range: nom. 2.4 to 75 V (E24 range) • Non-repetitive peak reverse power dissipation: max. 40 W. handbook, halfpagekaAPPLICATIONS MAM239 • Low voltage stabilizers or voltage The diodes are type branded. references. Fig.1 Simplified outline (SOD27; DO-35) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IF continuous forward current − 250 mA IZSM non-repetitive peak reverse current tp = 100 µs; square wave; see Tables Tj = 25 °C prior to surge 1, 2, 3 and 4 Ptot total power dissipation Tamb = 50 °C; note 1 − 400 mW Tamb = 50 °C; note 2 − 500 mW PZSM non-repetitive peak reverse power tp = 100 µs; square wave; − 40 W dissipation Tj = 25 °C prior to surge; see Fig.3 Tstg storage temperature −65 +200 °C Tj junction temperature −65 +200 °C Notes 1. Device mounted on a printed circuit-board without metallization pad; lead length max. 2. Tie-point temperature ≤ 50 °C; max. lead length 8 mm. 1996 Apr 26 2, ELECTRICAL CHARACTERISTICS Total BZX79-A and B and F and C series Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage IF = 10 mA; see Fig.4 0.9 V IR reverse current BZX79-A/B/F/C2V4 VR = 1 V 50 µA BZX79-A/B/F/C2V7 VR = 1 V 20 µA BZX79-A/B/F/C3V0 VR = 1 V 10 µA BZX79-A/B/F/C3V3 VR = 1V5µA BZX79-A/B/F/C3V6 VR = 1V5µA BZX79-A/B/F/C3V9 VR = 1V3µA BZX79-A/B/F/C4V3 VR = 1V3µA BZX79-A/B/F/C4V7 VR = 2V3µA BZX79-A/B/F/C5V1 VR = 2V2µA BZX79-A/B/F/C5V6 VR = 2V1µA BZX79-A/B/F/C6V2 VR = 4V3µA BZX79-A/B/F/C6V8 VR = 4V2µA BZX79-A/B/F/C7V5 VR = 5V1µA BZX79-A/B/F/C8V2 VR = 5 V 700 nA BZX79-A/B/F/C9V1 VR = 6 V 500 nA BZX79-A/B/F/C10 VR = 7 V 200 nA BZX79-A/B/F/C11 VR = 8 V 100 nA BZX79-A/B/F/C12 VR = 8 V 100 nA BZX79-A/B/F/C13 VR = 8 V 100 nA BZX79-A/B/F/C15 to 75 VR = 0.7VZnom 50 nA 1996 Apr 26 3, 1996 Apr 26 4 Table 1 Per type BZX79-A/B2V4 to A/B24 Tj = 25 °C; unless otherwise specified. WORKING VOLTAGE DIFFERENTIAL RESISTANCE TEMP. COEFF. DIODE CAP. NON-REPETITIVE PEAK VZ (V) rdif (Ω) SZ (mV/K) CBZX79- d (pF) REVERSE CURRENT atIAor B Ztest = 5 mA at IZtest = 5 mA at f = 1 MHz; IZSM (A) (see Figs 5 and 6) V = 0 V at t = 100 µs; T = 25 °C XXX Tol. ±1% (A) Tol. ±2% (B) at IZtest = 1 mA at IZtest = 5 mARpamb MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX. 2V4 2.37 2.43 2.35 2.45 275 600 70 100 −3.5 −1.6 0 450 6.0 2V7 2.67 2.73 2.65 2.75 300 600 75 100 −3.5 −2.0 0 450 6.0 3V0 2.97 3.03 2.94 3.06 325 600 80 95 −3.5 −2.1 0 450 6.0 3V3 3.26 3.34 3.23 3.37 350 600 85 95 −3.5 −2.4 0 450 6.0 3V6 3.56 3.64 3.53 3.67 375 600 85 90 −3.5 −2.4 0 450 6.0 3V9 3.86 3.94 3.82 3.98 400 600 85 90 −3.5 −2.5 0 450 6.0 4V3 4.25 4.35 4.21 4.39 410 600 80 90 −3.5 −2.5 0 450 6.0 4V7 4.65 4.75 4.61 4.79 425 500 50 80 −3.5 −1.4 0.2 300 6.0 5V1 5.04 5.16 5.00 5.20 400 480 40 60 −2.7 −0.8 1.2 300 6.0 5V6 5.54 5.66 5.49 5.71 80 400 15 40 −2.0 1.2 2.5 300 6.0 6V2 6.13 6.27 6.08 6.32 40 150 6 10 0.4 2.3 3.7 200 6.0 6V8 6.73 6.87 6.66 6.94 30 80 6 15 1.2 3.0 4.5 200 6.0 7V5 7.42 7.58 7.35 7.65 30 80 6 15 2.5 4.0 5.3 150 4.0 8V2 8.11 8.29 8.04 8.36 40 80 6 15 3.2 4.6 6.2 150 4.0 9V1 9.00 9.20 8.92 9.28 40 100 6 15 3.8 5.5 7.0 150 3.0 10 9.90 10.10 9.80 10.20 50 150 8 20 4.5 6.4 8.0 90 3.0 11 10.89 11.11 10.80 11.20 50 150 10 20 5.4 7.4 9.0 85 2.5 12 11.88 12.12 11.80 12.20 50 150 10 25 6.0 8.4 10.0 85 2.5 13 12.87 13.13 12.70 13.30 50 170 10 30 7.0 9.4 11.0 80 2.5 15 14.85 15.15 14.70 15.30 50 200 10 30 9.2 11.4 13.0 75 2.0 16 15.84 16.16 15.70 16.30 50 200 10 40 10.4 12.4 14.0 75 1.5 18 17.82 18.18 17.60 18.40 50 225 10 45 12.4 14.4 16.0 70 1.5 20 19.80 20.20 19.60 20.40 60 225 15 55 14.4 16.4 18.0 60 1.5 22 21.78 22.22 21.60 22.40 60 250 20 55 16.4 18.4 20.0 60 1.25 24 23.76 24.24 23.50 24.50 60 250 25 70 18.4 20.4 22.0 55 1.25, 1996 Apr 26 5 Table 2 Per type BZX79-A/B27 to A/B75 Tj = 25 °C; unless otherwise specified. WORKING VOLTAGE DIFFERENTIAL RESISTANCE TEMP. COEFF. DIODE CAP. NON-REPETITIVE PEAK V (V) r (Ω) S (mV/K) C (pF) REVERSE CURRENT BZX79- Z difZdat I = 2 mA at I = 2 mA at f = 1 MHz; I (A) A or B Ztest Ztest ZSM ± ± (see Figs 5 and 6) V = 0 V at t = 100 µs; T = 25 °CXXX Tol. 1% (A) Tol. 2% (B) at IZtest = 0.5 mA at IZtest = 2 mARpamb MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX. 27 26.73 27.27 26.50 27.50 65 300 25 80 21.4 23.4 25.3 50 1.0 30 29.70 30.30 29.40 30.60 70 300 30 80 24.4 26.6 29.4 50 1.0 33 32.67 33.33 32.30 33.70 75 325 35 80 27.4 29.7 33.4 45 0.9 36 35.64 36.36 35.30 36.70 80 350 35 90 30.4 33.0 37.4 45 0.8 39 38.61 39.39 38.20 39.80 80 350 40 130 33.4 36.4 41.2 45 0.7 43 42.57 43.43 42.10 43.90 85 375 45 150 37.6 41.2 46.6 40 0.6 47 46.53 47.47 46.10 47.90 85 375 50 170 42.0 46.1 51.8 40 0.5 51 50.49 51.51 50.00 52.00 90 400 60 180 46.6 51.0 57.2 40 0.4 56 55.44 56.56 54.90 57.10 100 425 70 200 52.2 57.0 63.8 40 0.3 62 61.38 62.62 60.80 63.20 120 450 80 215 58.8 64.4 71.6 35 0.3 68 67.32 68.68 66.60 69.40 150 475 90 240 65.6 71.7 79.8 35 0.25 75 74.25 75.75 73.50 76.50 170 500 95 255 73.4 80.2 88.6 35 0.2, 1996 Apr 26 6 Table 3 Per type BZX79-F/C2V4 to F/C24 Tj = 25 °C; unless otherwise specified. WORKING VOLTAGE DIFFERENTIAL RESISTANCE TEMP. COEFF. DIODE CAP. NON-REPETITIVE PEAK BZX79- VZ (V) rdif (Ω) SZ (mV/K) Cd (pF) REVERSE CURRENT at IZtest = 5 mA at IZtest = 5 mA at f = 1 MHz; IZSM (A) F or C ± (see Figs 5 and 6) V = 0 V at t = 100 µs; T = 25 °CTol. 3% (F) Tol. ±5% (C) atIRpamb XXX Ztest = 1 mA at IZtest = 5 mA MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX. 2V4 2.33 2.47 2.2 2.6 275 600 70 100 −3.5 −1.6 0 450 6.0 2V7 2.62 2.78 2.5 2.9 300 600 75 100 −3.5 −2.0 0 450 6.0 3V0 2.91 3.09 2.8 3.2 325 600 80 95 −3.5 −2.1 0 450 6.0 3V3 3.20 3.40 3.1 3.5 350 600 85 95 −3.5 −2.4 0 450 6.0 3V6 3.49 3.71 3.4 3.8 375 600 85 90 −3.5 −2.4 0 450 6.0 3V9 3.78 4.02 3.7 4.1 400 600 85 90 −3.5 −2.5 0 450 6.0 4V3 4.17 4.43 4.0 4.6 410 600 80 90 −3.5 −2.5 0 450 6.0 4V7 4.56 4.84 4.4 5.0 425 500 50 80 −3.5 −1.4 0.2 300 6.0 5V1 4.95 5.25 4.8 5.4 400 480 40 60 −2.7 −0.8 1.2 300 6.0 5V6 5.43 5.77 5.2 6.0 80 400 15 40 −2.0 1.2 2.5 300 6.0 6V2 6.01 6.39 5.8 6.6 40 150 6 10 0.4 2.3 3.7 200 6.0 6V8 6.60 7.00 6.4 7.2 30 80 6 15 1.2 3.0 4.5 200 6.0 7V5 7.28 7.72 7.0 7.9 30 80 6 15 2.5 4.0 5.3 150 4.0 8V2 7.95 8.45 7.7 8.7 40 80 6 15 3.2 4.6 6.2 150 4.0 9V1 8.83 9.37 8.5 9.6 40 100 6 15 3.8 5.5 7.0 150 3.0 10 9.70 10.30 9.4 10.6 50 150 8 20 4.5 6.4 8.0 90 3.0 11 10.67 11.33 10.4 11.6 50 150 10 20 5.4 7.4 9.0 85 2.5 12 11.64 12.36 11.4 12.7 50 150 10 25 6.0 8.4 10.0 85 2.5 13 12.61 13.39 12.4 14.1 50 170 10 30 7.0 9.4 11.0 80 2.5 15 14.55 15.45 13.8 15.6 50 200 10 30 9.2 11.4 13.0 75 2.0 16 15.50 16.50 15.3 17.1 50 200 10 40 10.4 12.4 14.0 75 1.5 18 17.50 18.50 16.8 19.1 50 225 10 45 12.4 14.4 16.0 70 1.5 20 19.40 20.60 18.8 21.2 60 225 15 55 14.4 16.4 18.0 60 1.5 22 21.30 22.70 20.8 23.3 60 250 20 55 16.4 18.4 20.0 60 1.25 24 23.30 24.70 22.8 25.6 60 250 25 70 18.4 20.4 22.0 55 1.25, 1996 Apr 26 7 Table 4 Per type BZX79-F/C27 to F/C75 Tj = 25 °C; unless otherwise specified. WORKING VOLTAGE DIFFERENTIAL RESISTANCE TEMP. COEFF. DIODE CAP. NON-REPETITIVE PEAK BZX79- VZ (V) rdif (Ω) SZ (mV/K) Cd (pF) REVERSE CURRENT at IZtest = 2 mA at IZtest = 2 mA at f = 1 MHz; IZSM (A) F or C ± ± (see Figs 5 and 6) VR = 0 V at tp = 100 µs; T = 25 °CTol. 3% (F) Tol. 5% (C) at I amb XXX Ztest = 0.5 mA at IZtest = 2 mA MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX. 27 26.20 27.80 25.1 28.9 65 300 25 80 21.4 23.4 25.3 50 1.0 30 29.10 30.90 28.0 32.0 70 300 30 80 24.4 26.6 29.4 50 1.0 33 32.00 34.00 31.0 35.0 75 325 35 80 27.4 29.7 33.4 45 0.9 36 34.90 37.10 34.0 38.0 80 350 35 90 30.4 33.0 37.4 45 0.8 39 37.80 40.20 37.0 41.0 80 350 40 130 33.4 36.4 41.2 45 0.7 43 41.70 44.30 40.0 46.0 85 375 45 150 37.6 41.2 46.6 40 0.6 47 45.60 48.40 44.0 50.0 85 375 50 170 42.0 46.1 51.8 40 0.5 51 49.50 52.50 48.0 54.0 90 400 60 180 46.6 51.0 57.2 40 0.4 56 54.30 57.70 52.0 60.0 100 425 70 200 52.2 57.0 63.8 40 0.3 62 60.10 63.90 58.0 66.0 120 450 80 215 58.8 64.4 71.6 35 0.3 68 66.00 70.00 64.0 72.0 150 475 90 240 65.6 71.7 79.8 35 0.25 75 72.80 77.20 70.0 79.0 170 500 95 255 73.4 80.2 88.6 35 0.2, THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length 8 mm. 300 K/W Rth j-a thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1 380 K/W Note 1. Device mounted on a printed circuit-board without metallization pad. 1996 Apr 26 8, GRAPHICAL DATA MBG930 handbook, full pagewidth δ = 1 Rth j-a (K/W) 0.75 0.50 0.33 102 0.20 0.10 0.05 0.02 0.01 10 ≤0.001 tptTδp=

T

10−1 1 10 102 103 104 tp (ms) 10 Fig.2 Thermal resistance from junction to ambient as a function of pulse duration. 3 MBG801 MBG78110 300 handbook, halfpage handbook, halfpage P IZSM F (W) (mA) 102 200 (1) 10 100 (2) 1 0 10−1 1 duration (ms) 10 0.6 0.8 V (V) 1.0F (1) Tj = 25 °C (prior to surge). (2) Tj = 150 °C (prior to surge). Tj = 25 °C. Fig.3 Maximum permissible non-repetitive peak reverse power dissipation Fig.4 Forward current as a function of forward versus duration. voltage; typical values. 1996 Apr 26 9, MBG783 MBG782 0 10 handbook, halfpage handbook, halfpage SZ SZ (mV/K) 4V3 (mV/K) 9V1 −1 5 3V9 8V2 7V5 3V6 6V8 6V2 5V6 5V1 −2 3V3 0 3V0 4V7 2V4 2V7 −3 −5 0 20 40 I (mA) 6004812 16 20Z IZ (mA) BZX79-A/B/F/C2V4 to A/B/F/C4V3. BZX79-A/B/F/C4V7 to A/B/F/C12. Tj = 25 to 150 °C. Tj = 25 to 150 °C. Fig.5 Temperature coefficient as a function of Fig.6 Temperature coefficient as a function of working current; typical values. working current; typical values. 1996 Apr 26 10, PACKAGE OUTLINE handbook, full pagewidth 0.56 max 1.85 4.25 25.4 min 25.4 min MLA428 - 1max max Dimensions in mm. Fig.7 SOD27 (DO-35).

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Apr 26 11]
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Order this document SEMICONDUCTOR TECHNICAL DATA by MGR2018CT/D  • Planar Epitaxial Construction RECTIFIER • Nitride Passivation for Stable Blocking Characteristics 20 AMPERES
Order this document SEMICONDUCTOR TECHNICAL DATA by MGR2018CT/D .ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: GALLIUM ARSENIDE • Planar Epitaxial Construction RECTIFIER • Nitrid