Download: DISCRETE SEMICONDUCTORS DATA SHEET BZX55 series Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of April 1992 File under Discrete Semiconductors, SC01

DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BZX55 series Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION • Total power dissipation: Low-power voltage regulator diodes in hermetically sealed leaded glass max. 500 mW SOD27 (DO-35) packages. • Tolerance series: ±5% The diodes are available in the normalized E24 ±5% tolerance range. • Working voltage range: The series consists of 37 types with nominal working voltages from 2.4 to 75 V nom. 2.4 to 75 V (E24 range) (BZX55-C2V4 to BZX55-C75). • Non-re...
Author: เดชเพียร Shared: 8/19/19
Downloads: 413 Views: 4094

Content

DISCRETE SEMICONDUCTORS

DATA SHEET

M3D176

BZX55 series Voltage regulator diodes

Product specification 1996 Apr 26 Supersedes data of April 1992 File under Discrete Semiconductors, SC01, FEATURES DESCRIPTION • Total power dissipation: Low-power voltage regulator diodes in hermetically sealed leaded glass max. 500 mW SOD27 (DO-35) packages. • Tolerance series: ±5% The diodes are available in the normalized E24 ±5% tolerance range. • Working voltage range: The series consists of 37 types with nominal working voltages from 2.4 to 75 V nom. 2.4 to 75 V (E24 range) (BZX55-C2V4 to BZX55-C75). • Non-repetitive peak reverse power dissipation: max. 40 W.

APPLICATIONS

handbook, halfpageka• Low voltage stabilizers or voltage MAM239 references. The diodes are type branded. Fig.1 Simplified outline (SOD27; DO-35) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IF continuous forward current − 250 mA IZSM non-repetitive peak reverse current tp = 100 µs; square wave; see Table Tj = 25 °C prior to surge “Per type” Ptot total power dissipation Tamb = 50 °C; note 1 − 400 mW Tamb = 50 °C; note 2 − 500 mW PZSM non-repetitive peak reverse power tp = 100 µs; square wave; − 40 W dissipation Tj = 25 °C prior to surge tp = 8.3 ms; square wave; − 30 W Tj ≤ 150 °C prior to surge Tstg storage temperature −65 +200 °C Tj junction temperature − 200 °C Notes 1. Device mounted on a printed circuit-board without metallization pad; lead length max. 2. Tie-point temperature ≤ 50 °C; lead length 8 mm. ELECTRICAL CHARACTERISTICS Total series Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VF forward voltage IF = 100 mA; see Fig.4 − 1.0 V 1996 Apr 26 2, 1996 Apr 26 3 Per type Tj = 25 °C; unless otherwise specified. WORKING DIFFERENTIAL TEMP. COEFF. TEST DIODE CAP. REVERSE CURRENT at NON-REPETITIVE VOLTAGE RESISTANCE SZ (mV/K) CURRENT Cd (pF) REVERSE VOLTAGE PEAK REVERSE VZ (V) rdif (Ω) at IZtest IZtest (mA) at f = 1 MHz; IR (µA) CURRENT BZX55- at IZtest see Figs 5 and 6 at VR = 0 V IZSM (A) CXXX at at at at at tp = 100 µs;IZ IZtest Tj = 25 °C T Vj = 150 °CRT= 25 °C (V) amb MIN. MAX. MAX. MAX. TYP. MAX. MAX. MAX. MAX. 2V4 2.28 2.56 600 85 −1.8 5 450 50 100 1.0 6.0 2V7 2.5 2.9 600 85 −1.9 5 450 10 50 1.0 6.0 3V0 2.8 3.2 600 85 −2.1 5 450 4 40 1.0 6.0 3V3 3.1 3.5 600 85 −2.2 5 450 2 40 1.0 6.0 3V6 3.4 3.8 600 85 −2.4 5 450 2 40 1.0 6.0 3V9 3.7 4.1 600 85 −2.4 5 450 2 40 1.0 6.0 4V3 4.0 4.6 600 80 −2.4 5 450 1 20 1.0 6.0 4V7 4.4 5.0 600 70 −1.4 5 300 0.5 10 1.0 6.0 5V1 4.8 5.4 550 50 −0.8 5 300 0.1 2 1.0 6.0 5V6 5.2 6.0 450 30 1.6 5 300 0.1 2 1.0 6.0 6V2 5.8 6.6 200 10 2.2 5 200 0.1 2 2.0 6.0 6V8 6.4 7.2 150 8 3.0 5 200 0.1 2 3.0 6.0 7V5 7.0 7.9 50 7 3.8 5 150 0.1 2 5.0 4.0 8V2 7.7 8.7 50 7 4.5 5 150 0.1 2 6.15 4.0 9V1 8.5 9.6 50 10 5.5 5 150 0.1 2 6.8 3.0 10 9.4 10.6 70 15 6.5 5 90 0.1 2 7.5 3.0 11 10.4 11.6 70 20 7.7 5 85 0.1 2 8.25 2.5 12 11.4 12.7 90 20 8.4 5 85 0.1 2 9.0 2.5 13 12.4 14.1 110 26 9.8 5 80 0.1 2 9.75 2.5 15 13.8 15.6 110 30 11.3 5 75 0.1 2 11.25 2.0 16 15.3 17.1 170 40 12.8 5 75 0.1 2 12.0 1.5 18 16.8 19.1 170 50 14.4 5 70 0.1 2 13.5 1.5 20 18.8 21.2 220 55 16.0 5 60 0.1 2 15.0 1.5, 1996 Apr 26 4 WORKING DIFFERENTIAL TEMP. COEFF. TEST DIODE CAP. REVERSE CURRENT at NON-REPETITIVE VOLTAGE RESISTANCE SZ (mV/K) CURRENT Cd (pF) REVERSE VOLTAGE PEAK REVERSE VZ (V) rdif (Ω) at IZtest IZtest (mA) at f = 1 MHz; IR (µA) CURRENT BZX55- at IZtest see Figs 5 and 6 at Vat at R = 0 V IZSM (A) CXXX at at at t = 100 µs; IZIpZtest Tj = 25 °C Tj = 150 °C VR T = 25 °C (V) amb MIN. MAX. MAX. MAX. TYP. MAX. MAX. MAX. MAX. 22 20.8 23.3 220 55 18.7 5 60 0.1 2 16.5 1.25 24 22.8 25.6 220 80 20.4 5 55 0.1 2 18.0 1.25 27 25.1 28.9 220 80 22.9 5 50 0.1 2 20.25 1.0 30 28.0 32.0 220 80 27.0 5 50 0.1 2 22.25 1.0 33 31.0 35.0 220 80 29.7 5 45 0.1 2 24.75 0.9 36 34.0 38.0 220 80 32.4 5 45 0.1 2 27.0 0.8 39 37.0 41.0 500 90 35.1 2.5 45 0.1 2 29.25 0.7 43 40.0 46.0 600 90 38.7 2.5 40 0.1 2 32.25 0.6 47 44.0 50.0 700 110 44.0 2.5 40 0.1 2 35.25 0.5 51 48.0 54.0 700 125 49.0 2.5 40 0.1 2 38.25 0.4 56 52.0 60.0 1000 135 55.0 2.5 40 0.1 2 42.0 0.3 62 58.0 66.0 1000 150 62.0 2.5 35 0.1 2 46.5 0.3 68 64.0 72.0 1000 200 70.0 2.5 35 0.1 2 51.0 0.25 75 70.0 79.0 1500 250 78.0 2.5 35 0.1 2 56.25 0.2 Note 1. For BZX55-C2V4 up to C36 IZ = 1 mA; for C39 up to C75 IZ = 0.5 mA., THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length 8 mm 300 K/W Rth j-a thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1 380 K/W Note 1. Device mounted on a printed circuit-board without metallization pad. 1996 Apr 26 5, GRAPHICAL DATA MBG930 handbook, full pagewidth δ = 1 Rth j-a (K/W) 0.75 0.50 0.33 102 0.20 0.10 0.05 0.02 0.01 10 ≤0.001 tptTδp=

T

10−1 1 10 102 103 104 tp (ms) 10 Fig.2 Thermal resistance from junction to ambient as a function of pulse duration. 3 MBG801 MBG78110 300 handbook, halfpage handbook, halfpage P IZSM F (W) (mA) 102 200 (1) 10 100 (2) 1 0 10−1 1 duration (ms) 10 0.6 0.8 VF (V) 1.0 (1) Tj = 25 °C (prior to surge). (2) Tj = 150 °C (prior to surge). Fig.3 Maximum permissible non-repetitive peak reverse power dissipation Fig.4 Forward current as a function of forward versus duration. voltage; typical values. 1996 Apr 26 6, MBG783 MBG782 0 10 handbook, halfpage handbook, halfpage SZ SZ 4V3 11(mV/K) (mV/K) 9V1 −1 5 3V9 8V2 7V5 3V6 6V8 6V2 5V6 5V1 −2 3V3 0 3V0 4V7 2V4 2V7 −3 −5 0 20 40 I (mA) 6004812 16 20Z IZ (mA) BZX55-C2V4 to C4V3. BZX55-C4V7 to C12. Tj = 25 to 150 °C. Tj = 25 to 150 °C. Fig.5 Temperature coefficient as a function of Fig.6 Temperature coefficient as a function of working current; typical values. working current; typical values. 1996 Apr 26 7, PACKAGE OUTLINE handbook, full pagewidth 0.56 max 1.85 4.25 25.4 min 25.4 min MLA428 - 1max max Dimensions in mm. Fig.7 SOD27 (DO-35).

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Apr 26 8]
15

Similar documents

DISCRETE SEMICONDUCTORS DATA SHEET BZX284 series Voltage regulator diodes Product specification 1995 Dec 13 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D154 BZX284 series Voltage regulator diodes Product specification 1995 Dec 13 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION • Total power dissipation: Low-power voltage regulator diodes in a small ceramic SMD SOD110 package. max
DISCRETE SEMICONDUCTORS DATA SHEET BZW03 series Voltage regulator diodes Product specification 1996 May 14 Supersedes data of April 1992 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BZW03 series Voltage regulator diodes Product specification 1996 May 14 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION construction. This package is hermetically sealed and fatigue free • Glass
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR6040/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR6040/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: Motorola Preferred Device • Ultrafast 100 Nanosecond Recovery Time • 175°C Operating Juncti
Order this document   For Use As A Damper Diode Motorola Preferred Device In High and Very High Resolution Monitors
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR5150E/D For Use As A Damper Diode Motorola Preferred Device In High and Very High Resolution Monitors SCANSWITCH The MUR5150E is a state-of-the-art Ultrafast Power Rectifier specifically RECTIFIER designed for use as a damper diode in horizont
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR490E/D  Ultrafast “E’’ Series with High Reverse Energy Capability
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR490E/D Ultrafast “E’’ Series with High Reverse Energy Capability MUR4100E is a .designed for use in switching power supplies, inverters and as Motorola Preferred Device free wheeling diodes, these state–of–the–art devices have the following fea
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR420/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR420/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • ° MUR420 and MUR460 are175 C Operating
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR3080/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR3080/D Motorola Preferred Device .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 75 ns (Typ) Soft Recovery Time • 175°C Operating Junc
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR3040/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR3040/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: Motorola Preferred Device • Ultrafast 100 Nanosecond Recovery Time • 175°C Operating Juncti
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR3020WT/D  .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features:
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR3020WT/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 and 60 Nanosecond Recovery Time • 175°C Operating Junction Temperature Mot
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR3020PT/D  .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features:
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR3020PT/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 and 60 Nanosecond Recovery Time *Motorola Preferred Devices • 175°C Operat
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR190E/D  Ultrafast “E’’ Series with High Reverse Energy Capability
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR190E/D Ultrafast “E’’ Series with High Reverse Energy Capability .designed for use in switching power supplies, inverters and as MUR1100E is a free wheeling diodes, these state–of–the–art devices have the Motorola Preferred Device following fea
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR1620CTR/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR1620CTR/D .designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Motorola Preferred Device Rectifiers, makes a single phase full–wave bridge. T
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR1620CT/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR1620CT/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 and 60 Nanosecond Recovery Times • 175°C Operating Junction Temperature Mo
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR1520/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR1520/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 and 60 Nanosecond Recovery Time Motorola Preferred Devices • 175°C Operating
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR120/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR120/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • 175°C Operating Junction Temperature M
Order this document   For Use As A Damper Diode Motorola Preferred Device In High and Very High Resolution Monitors
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR10150E/D For Use As A Damper Diode Motorola Preferred Device In High and Very High Resolution Monitors The MUR10150E is a state-of-the-art Power Rectifier specifically designed for use as a SCANSWITCH damper diode in horizontal deflection circ
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR10120E/D  For High and Very High Resolution Monitors
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR10120E/D For High and Very High Resolution Monitors This state–of–the–art power rectifier is specifically designed for Motorola Preferred Device use as a damper diode in horizontal deflection circuits for high and very high resolution monitors.
Order this document SEMICONDUCTOR TECHNICAL DATA by MSRB860–1/D  D2PAK–SL Straight Lead
Order this document SEMICONDUCTOR TECHNICAL DATA by MSRB860–1/D D2PAK–SL Straight Lead SOFT RECOVERY Designed for use as free wheeling diodes in variable speed motor control POWER RECTIFIER applications and other average frequency switching power supplies. These 8.0 AMPERES state–of–the–art devices
Order this document SEMICONDUCTOR TECHNICAL DATA by MSR860/D  Plastic TO–220 Package
Order this document SEMICONDUCTOR TECHNICAL DATA by MSR860/D Plastic TO–220 Package Designed for use as free wheeling diodes in variable speed motor control applications and other average frequency switching power supplies. These SOFT RECOVERY state–of–the–art devices have the following features: P
Order this document SEMICONDUCTOR TECHNICAL DATA by MRS1504T3/D SMB Power Surface Mount Package
Order this document SEMICONDUCTOR TECHNICAL DATA by MRS1504T3/D SMB Power Surface Mount Package Features mesa epitaxial construction with glass passivation. STANDARD RECOVERY Ideally suited for high frequency switching power supplies; free RECTIFIER wheeling diodes and polarity protection diodes. 1.
Order this document SEMICONDUCTOR TECHNICAL DATA by MR850/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MR850/D Axial lead mounted fast recovery power rectifiers are designed for special applications such as dc power supplies, inverters, converters, ultrasonic systems, choppers, low RF interference and free wheeling diodes. A complete line of fast re
Order this document SEMICONDUCTOR TECHNICAL DATA by MR750/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MR750/D • Current Capacity Comparable to Chassis Mounted Rectifiers • Very High Surge Capacity • Insulated Case Mechanical Characteristics: • Case: Epoxy, Molded MR754 and MR760 are Motorola Preferred Devices • Weight: 2.5 grams (approximately) •
Order this document SEMICONDUCTOR TECHNICAL DATA by MR2835S/D  • High Power Capability SUPPRESSOR • Economical 24 V – 32 V
Order this document SEMICONDUCTOR TECHNICAL DATA by MR2835S/D .designed for applications requiring a diode with reverse avalanche characteris- tics for use as reverse power transient suppressor. Developed to suppress transients in the automotive system, this device operates in reverse mode as power
Order this document SEMICONDUCTOR TECHNICAL DATA by MR2535L/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MR2535L/D .designed for applications requiring a low voltage rectifier with reverse avalanche characteristics for use as reverse power transient suppressors. Developed to suppress transients in the automotive system, these devices MEDIUM CURRENT op
Order this document SEMICONDUCTOR TECHNICAL DATA by MGRB2025CT/D  • Planar Epitaxial Construction 20 AMPERES • Nitride Passivation for Stable Blocking Characteristics 250 VOLTS
Order this document SEMICONDUCTOR TECHNICAL DATA by MGRB2025CT/D .ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: GALLIUM ARSENIDE RECTIFIER • Planar Epitaxial Construction 20 AMPE
Order this document SEMICONDUCTOR TECHNICAL DATA by MGRB2018CT/D  • Planar Epitaxial Construction RECTIFIER • Nitride Passivation for Stable Blocking Characteristics 20 AMPERES
Order this document SEMICONDUCTOR TECHNICAL DATA by MGRB2018CT/D .ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: GALLIUM ARSENIDE • Planar Epitaxial Construction RECTIFIER • Nitri
Order this document SEMICONDUCTOR TECHNICAL DATA by MGRB1018/D  • Planar Epitaxial Construction GALLIUM ARSENIDE • Nitride Passivation for Stable Blocking Characteristics RECTIFIER
Order this document SEMICONDUCTOR TECHNICAL DATA by MGRB1018/D .ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction GALLIUM ARSENIDE • Nitride Passivati
Order this document SEMICONDUCTOR TECHNICAL DATA by MGR2025CT/D  • Planar Epitaxial Construction 20 AMPERES • Nitride Passivation for Stable Blocking Characteristics 250 VOLTS
Order this document SEMICONDUCTOR TECHNICAL DATA by MGR2025CT/D .ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: GALLIUM ARSENIDE RECTIFIER • Planar Epitaxial Construction 20 AMPER
Order this document SEMICONDUCTOR TECHNICAL DATA by MGR2018CT/D  • Planar Epitaxial Construction RECTIFIER • Nitride Passivation for Stable Blocking Characteristics 20 AMPERES
Order this document SEMICONDUCTOR TECHNICAL DATA by MGR2018CT/D .ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: GALLIUM ARSENIDE • Planar Epitaxial Construction RECTIFIER • Nitrid
Order this document SEMICONDUCTOR TECHNICAL DATA by MGR1018/D  • Planar Epitaxial Construction GALLIUM ARSENIDE • Nitride Passivation for Stable Blocking Characteristics RECTIFIER
Order this document SEMICONDUCTOR TECHNICAL DATA by MGR1018/D .ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction GALLIUM ARSENIDE • Nitride Passivatio