Download: DISCRETE SEMICONDUCTORS DATA SHEET BZX284 series Voltage regulator diodes Product specification 1995 Dec 13 File under Discrete Semiconductors, SC01

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D154 BZX284 series Voltage regulator diodes Product specification 1995 Dec 13 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION • Total power dissipation: Low-power voltage regulator diodes in a small ceramic SMD SOD110 package. max. 400 mW The diodes are available in the normalized E24 ±2% (BZX284-B) and ±5% • Two tolerance series: (BZX284-C) tolerance range. The series consists of 37 types with nominal ±2% and ±5% working voltages from 2.4 to 75 V. • Working voltage range: nom. 2.4 to 75 V (E24 range). cathode mark handbook,...
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DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, halfpage M3D154

BZX284 series Voltage regulator diodes

Product specification 1995 Dec 13 File under Discrete Semiconductors, SC01, FEATURES DESCRIPTION • Total power dissipation: Low-power voltage regulator diodes in a small ceramic SMD SOD110 package. max. 400 mW The diodes are available in the normalized E24 ±2% (BZX284-B) and ±5% • Two tolerance series: (BZX284-C) tolerance range. The series consists of 37 types with nominal ±2% and ±5% working voltages from 2.4 to 75 V. • Working voltage range: nom. 2.4 to 75 V (E24 range). cathode mark handbook, 4 columnsakka

APPLICATIONS

• General regulation functions. bottom view side view top view MAM219 Fig.1 Simplified outline (SOD110) and symbol.

MARKING

TYPE MARKING TYPE MARKING TYPE MARKING TYPE MARKING NUMBER CODE NUMBER CODE NUMBER CODE NUMBER CODE BZX284-B2V4 WO BZX284-B15 XH BZX284-C2V4 YO BZX284-C15 ZH BZX284-B2V7 WP BZX284-B16 XI BZX284-C2V7 YP BZX284-C16 ZI BZX284-B3V0 WQ BZX284-B18 XJ BZX284-C3V0 YQ BZX284-C18 ZJ BZX284-B3V3 WR BZX284-B20 XK BZX284-C3V3 YR BZX284-C20 ZK BZX284-B3V6 WS BZX284-B22 XL BZX284-C3V6 YS BZX284-C22 ZL BZX284-B3V9 WT BZX284-B24 XM BZX284-C3V9 YT BZX284-C24 ZM BZX284-B4V3 WU BZX284-B27 XN BZX284-C4V3 YU BZX284-C27 ZN BZX284-B4V7 WV BZX284-B30 XO BZX284-C4V7 YV BZX284-C30 ZO BZX284-B5V1 WW BZX284-B33 XP BZX284-C5V1 YW BZX284-C33 ZP BZX284-B5V6 WX BZX284-B36 XQ BZX284-C5V6 YX BZX284-C36 ZQ BZX284-B6V2 WY BZX284-B39 XR BZX284-C6V2 YY BZX284-C39 ZR BZX284-B6V8 WZ BZX284-B43 XS BZX284-C6V8 YZ BZX284-C43 ZS BZX284-B7V5 XA BZX284-B47 XT BZX284-C7V5 ZA BZX284-C47 ZT BZX284-B8V2 XB BZX284-B51 XU BZX284-C8V2 ZB BZX284-C51 ZU BZX284-B9V1 XC BZX284-B56 XV BZX284-C9V1 ZC BZX284-C56 ZV BZX284-B10 XD BZX284-B62 XW BZX284-C10 ZD BZX284-C62 ZW BZX284-B11 XE BZX284-B68 XX BZX284-C11 ZE BZX284-C68 ZX BZX284-B12 XF BZX284-B75 XY BZX284-C12 ZF BZX284-C75 ZY BZX284-B13 XG − − BZX284-C13 ZG − − 1995 Dec 13 2, LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IF continuous forward current − 250 mA IZSM non-repetitive peak reverse current tp = 100 µs; square wave; see Tables 1 and 2 Tamb = 25 °C prior to surge Ptot total power dissipation Tamb = 25 °C; note 1 − 400 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Note 1. Device mounted on a printed-circuit board: 11 × 25 × 1.6 mm. ELECTRICAL CHARACTERISTICS Total BZX284-B and C series Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage IF = 10 mA; see Fig.4 0.9 V IF = 100 mA; see Fig.4 1.1 V IR reverse current BZX284-B/C2V4 VR = 1 V 50 µA BZX284-B/C2V7 VR = 1 V 20 µA BZX284-B/C3V0 VR = 1 V 10 µA BZX284-B/C3V3 VR = 1V5µA BZX284-B/C3V6 VR = 1V5µA BZX284-B/C3V9 VR = 1V3µA BZX284-B/C4V3 VR = 1V3µA BZX284-B/C4V7 VR = 2V3µA BZX284-B/C5V1 VR = 2V2µA BZX284-B/C5V6 VR = 2V1µA BZX284-B/C6V2 VR = 4V3µA BZX284-B/C6V8 VR = 4V2µA BZX284-B/C7V5 VR = 5V1µA BZX284-B/C8V2 VR = 5 V 700 nA BZX284-B/C9V1 VR = 6 V 500 nA BZX284-B/C10 VR = 7 V 200 nA BZX284-B/C11 VR = 8 V 100 nA BZX284-B/C12 VR = 8 V 100 nA BZX284-B/C13 VR = 8 V 100 nA BZX284-B/C15 to 75 VR = 0.7VZnom 50 nA 1995 Dec 13 3, 1995 Dec 13 4 Table 1 Per type BZX284-B/C2V4 to B/C24 Tj = 25 °C unless otherwise specified. WORKING VOLTAGE DIFFERENTIAL RESISTANCE TEMP. COEFF. DIODE CAP. NON-REPETITIVE PEAK V (V) r (Ω) S (mV/K) C (pF) REVERSE CURRENT BZX284- Z difZdat IZtest = 5 mA at IZtest = 5 mA at f = 1 MHz; IZSM (A) at tp = 100 µs;B or C ± (see Figs 5 and 6) V = 0VT= 25 °CXXX Tol. 2% (B) Tol. ±5% (C) at IZtest = 1 mA atIRambZtest = 5 mA MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. TYP. MAX. MAX. 2V4 2.35 2.45 2.20 2.60 275 400 70 100 −1.6 450 12.0 2V7 2.65 2.75 2.50 2.90 300 450 75 100 −2.0 440 12.0 3V0 2.94 3.06 2.80 3.20 325 500 80 95 −2.1 425 12.0 3V3 3.23 3.37 3.10 3.50 350 500 85 95 −2.4 410 12.0 3V6 3.53 3.67 3.40 3.80 375 500 85 90 −2.4 390 12.0 3V9 3.82 3.98 3.70 4.10 400 500 85 90 −2.5 370 12.0 4V3 4.21 4.39 4.00 4.60 410 600 80 90 −2.5 350 12.0 4V7 4.61 4.79 4.40 5.00 425 500 50 80 −1.4 325 12.0 5V1 5.00 5.20 4.80 5.40 400 480 40 60 −0.8 300 12.0 5V6 5.49 5.71 5.20 6.00 80 400 15 40 1.2 275 12.0 6V2 6.08 6.32 5.80 6.60 40 150 6 10 2.3 250 12.0 6V8 6.66 6.94 6.40 7.20 30 80 6 15 3.0 215 12.0 7V5 7.35 7.65 7.00 7.90 15 80 2 10 4.0 170 4.0 8V2 8.04 8.36 7.70 8.70 20 80 2 10 4.6 150 4.0 9V1 8.92 9.28 8.50 9.60 20 100 2 10 5.5 120 3.0 10 9.80 10.20 9.40 10.60 20 150 2 10 6.4 110 3.0 11 10.80 11.20 10.40 11.60 25 150 2 10 7.4 108 2.5 12 11.80 12.20 11.40 12.70 25 150 2 10 8.4 105 2.5 13 12.70 13.30 12.40 14.10 25 170 2 10 9.4 103 2.5 15 14.70 15.30 13.80 15.60 25 200 3 15 11.4 99 2.0 16 15.70 16.30 15.30 17.10 25 200 4 20 12.4 97 1.5 18 17.60 18.40 16.80 19.10 25 225 4 20 14.4 93 1.5 20 19.60 20.40 18.80 21.20 30 225 4 20 16.4 88 1.5 22 21.60 22.40 20.80 23.30 30 250 5 25 18.4 84 1.25 24 23.50 24.50 22.80 25.60 30 250 6 30 20.4 80 1.25, 1995 Dec 13 5 Table 2 Per type BZX284-B/C27 to B/C75 Tj = 25 °C unless otherwise specified. WORKING VOLTAGE DIFFERENTIAL RESISTANCE TEMP. COEFF. DIODE CAP. NON-REPETITIVE PEAK VZ (V) rdif (Ω) SZ (mV/K) Cd (pF) REVERSE CURRENTBZX284- at I = 2 mA at I = 2 mA at f = 1 MHz; I (A) at t = 100 µs; B or C Ztest Ztest ZSM p ± ± VR = 0 V Tamb = 25 °CXXX Tol. 2% (B) Tol. 5% (C) at IZtest = 0.5 mA at IZtest = 2 mA MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. TYP. MAX. MAX. 27 26.50 27.50 25.10 28.90 35 250 8 40 23.4 73 1.0 30 29.40 30.60 28.00 32.00 35 250 10 40 26.6 66 1.0 33 32.30 33.70 31.00 35.00 40 275 11 40 29.7 60 0.9 36 35.30 36.70 34.00 38.00 40 300 15 60 33.0 59 0.8 39 38.20 39.80 37.00 41.00 40 300 25 75 36.4 58 0.7 43 42.10 43.90 40.00 46.00 45 325 30 80 41.2 56 0.6 47 46.10 47.90 44.00 50.00 45 325 30 90 46.1 55 0.5 51 50.00 52.00 48.00 54.00 45 350 35 110 51.0 52 0.4 56 54.90 57.10 52.00 60.00 50 375 40 120 57.0 49 0.3 62 60.80 63.20 58.00 66.00 60 400 50 140 64.4 44 0.3 68 66.60 69.40 64.00 72.00 75 400 55 160 71.7 40 0.25 75 73.50 76.50 70.00 79.00 85 400 70 175 80.2 35 0.2, THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 315 K/W Note 1. Device mounted on a printed-circuit board: 11 × 25 × 1.6 mm.

MOUNTING

Wave soldering Reflow soldering Before wave soldering, attach SOD110 packages to the Follow standard reflow soldering techniques to ensure printed-circuit boards using a small dot of thermo-setting correct application of solder paste and placement of the epoxy or UV-curing adhesive centred between the SOD110 package (see Fig.2). soldering lands (see Fig.3). 3.00 handbook, halfpage 3.40 handbook, halfpage 1.25 1.25 1.00 1.00 MGC119 1.10 1.10 MGC126 Dimensions in mm. Dimensions in mm. Fig.2 SOD110 reflow soldering pattern. Fig.3 SOD110 wave soldering pattern. 1995 Dec 13 6, GRAPHICAL DATA MBG781 MBG783 300 0 handbook, halfpage handbook, halfpage IF SZ (mA) (mV/K) 4V3 200 −1 3V9 3V6 100 −2 3V3 3V0 2V4 2V7 0 −3 0.6 0.8 VF (V) 1.0 0 20 40 IZ (mA) BZX284-B/C2V4 to B/C4V3. Tj = 25 °C. Tj = 25 to 150 °C. Fig.4 Forward current as a function of Fig.5 Temperature coefficient as a function of forward voltage; typical values. working current; typical values. MBG782 handbook, halfpage SZ 11 (mV/K) 9V1 8V2 7V5 6V8 6V2 5V6 5V1 4V7 −504812 16 20 IZ (mA) BZX284-B/C4V7 to B/C12. Tj = 25 to 150 °C. Fig.6 Temperature coefficient as a function of working current; typical values. 1995 Dec 13 7, PACKAGE OUTLINE cathode mark 2.10 1.90 1.6 max MSA323 - 1 1.40 1.10 0.1 Dimensions in mm. Fig.7 SOD110.

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1995 Dec 13 8,

NOTES

1995 Dec 13 9,

NOTES

1995 Dec 13 10,

NOTES

1995 Dec 13 11,

Philips Semiconductors – a worldwide company

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Publication thereof does not convey nor imply any license under patent- or New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, other industrial or intellectual property rights. Tel. (09)849-4160, Fax. (09)849-7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. (022)74 8000, Fax. (022)74 8341 Printed in The Netherlands Pakistan: Philips Electrical Industries of Pakistan Ltd., Exchange Bldg. ST-2/A, Block 9, KDA Scheme 5, Clifton, 113061/1100/01/pp12 Date of release: 1995 Dec 13 KARACHI 75600, Tel. (021)587 4641-49, Document order number: 9397 750 00525 Fax. (021)577035/5874546]
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Order this document SEMICONDUCTOR TECHNICAL DATA by MR750/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MR750/D • Current Capacity Comparable to Chassis Mounted Rectifiers • Very High Surge Capacity • Insulated Case Mechanical Characteristics: • Case: Epoxy, Molded MR754 and MR760 are Motorola Preferred Devices • Weight: 2.5 grams (approximately) •
Order this document SEMICONDUCTOR TECHNICAL DATA by MR2835S/D  • High Power Capability SUPPRESSOR • Economical 24 V – 32 V
Order this document SEMICONDUCTOR TECHNICAL DATA by MR2835S/D .designed for applications requiring a diode with reverse avalanche characteris- tics for use as reverse power transient suppressor. Developed to suppress transients in the automotive system, this device operates in reverse mode as power
Order this document SEMICONDUCTOR TECHNICAL DATA by MR2535L/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MR2535L/D .designed for applications requiring a low voltage rectifier with reverse avalanche characteristics for use as reverse power transient suppressors. Developed to suppress transients in the automotive system, these devices MEDIUM CURRENT op
Order this document SEMICONDUCTOR TECHNICAL DATA by MGRB2025CT/D  • Planar Epitaxial Construction 20 AMPERES • Nitride Passivation for Stable Blocking Characteristics 250 VOLTS
Order this document SEMICONDUCTOR TECHNICAL DATA by MGRB2025CT/D .ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: GALLIUM ARSENIDE RECTIFIER • Planar Epitaxial Construction 20 AMPE
Order this document SEMICONDUCTOR TECHNICAL DATA by MGRB2018CT/D  • Planar Epitaxial Construction RECTIFIER • Nitride Passivation for Stable Blocking Characteristics 20 AMPERES
Order this document SEMICONDUCTOR TECHNICAL DATA by MGRB2018CT/D .ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: GALLIUM ARSENIDE • Planar Epitaxial Construction RECTIFIER • Nitri
Order this document SEMICONDUCTOR TECHNICAL DATA by MGRB1018/D  • Planar Epitaxial Construction GALLIUM ARSENIDE • Nitride Passivation for Stable Blocking Characteristics RECTIFIER
Order this document SEMICONDUCTOR TECHNICAL DATA by MGRB1018/D .ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction GALLIUM ARSENIDE • Nitride Passivati
Order this document SEMICONDUCTOR TECHNICAL DATA by MGR2025CT/D  • Planar Epitaxial Construction 20 AMPERES • Nitride Passivation for Stable Blocking Characteristics 250 VOLTS
Order this document SEMICONDUCTOR TECHNICAL DATA by MGR2025CT/D .ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: GALLIUM ARSENIDE RECTIFIER • Planar Epitaxial Construction 20 AMPER
Order this document SEMICONDUCTOR TECHNICAL DATA by MGR2018CT/D  • Planar Epitaxial Construction RECTIFIER • Nitride Passivation for Stable Blocking Characteristics 20 AMPERES
Order this document SEMICONDUCTOR TECHNICAL DATA by MGR2018CT/D .ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: GALLIUM ARSENIDE • Planar Epitaxial Construction RECTIFIER • Nitrid
Order this document SEMICONDUCTOR TECHNICAL DATA by MGR1018/D  • Planar Epitaxial Construction GALLIUM ARSENIDE • Nitride Passivation for Stable Blocking Characteristics RECTIFIER
Order this document SEMICONDUCTOR TECHNICAL DATA by MGR1018/D .ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction GALLIUM ARSENIDE • Nitride Passivatio
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRV7030CTL/D   D3PAK Power Surface Mount Package
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRV7030CTL/D Motorola Preferred Device D3PAK Power Surface Mount Package SCHOTTKY BARRIER Employing the Schottky Barrier principle in a large area metal–to–silicon power RECTIFIER rectifier. Features epitaxial construction with oxide passivation