Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MUR490E/D Ultrafast “E’’ Series with High Reverse Energy Capability

Order this document SEMICONDUCTOR TECHNICAL DATA by MUR490E/D Ultrafast “E’’ Series with High Reverse Energy Capability

MUR4100E is a .designed for use in switching power supplies, inverters and as Motorola Preferred Device free wheeling diodes, these state–of–the–art devices have the following features: • 20 mJ Avalanche Energy Guaranteed • Excellent Protection Against Voltage Transients in Switching ULTRAFAST Inductive Load Circuits RECTIFIERS • Ultrafast 75 Nanosecond Recovery Time 4.0 AMPERES 900–1000 VOLTS • 175°C Operating Junction Temperature • Low Forward Voltage • Low Leakage Current • High Temperature Glass Passivated Junction • Reverse Voltage to 1000 Volts Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.1 gram (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable CASE 267–03 • Lead and Mounting Surface Temperature for Soldering Purposes: 220°C Max. for 10 Seconds, 1/16″ from case • Shipped in plastic bags, 5,000 per bag • Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to the part number • Polarity: Cathode indicated by Polarity Band • Marking: U490E, U4100E MAXIMUM RATINGS Rating Symbol MUR490E MUR4100E Unit Peak Repetitive Reverse Voltage VRRM 900 1000 Volts Working Peak Reverse Voltage VRWM DC Blocking Voltage VR Average Rectified Forward Current (Square Wave) IF(AV) 4.0 @ TA = 35°C Amps (Mounting Method #3 Per Note 1) Nonrepetitive Peak Surge Current IFSM 70 Amps (Surge applied at rated load conditions, half wave, single phase, 60 Hz) Operating Junction Temperature and Storage Temperature TJ, Tstg 65 to +175 °C THERMAL CHARACTERISTICS Maximum Thermal Resistance, Junction to Case RθJC See Note 1 °C/W (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%. SWITCHMODE is a trademark of Motorola, Inc. Preferred devices are Motorola recommended choices for future use and best overall value. Rev2RMeoctotriofilea,r InDce. 1v9ic96e Data 1, ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (1) vF Volts (iF = 3.0 Amps, TJ = 150°C) 1.53 (iF = 3.0 Amps, TJ = 25°C) 1.75 (iF = 4.0 Amps, TJ = 25°C) 1.85 Maximum Instantaneous Reverse Current (1) iR µA (Rated dc Voltage, TJ = 100°C) 900 (Rated dc Voltage, TJ = 25°C) 25 Maximum Reverse Recovery Time trr ns (IF = 1.0 Amp, di/dt = 50 Amp/µs) 100 (IF = 0.5 Amp, iR = 1.0 Amp, IREC = 0.25 Amp) 75 Maximum Forward Recovery Time tfr 75 ns (IF = 1.0 Amp, di/dt = 100 Amp/µs, Recovery to 1.0 V) Controlled Avalanche Energy (See Test Circuit in Figure 6) WAVAL 20 mJ (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%. 2 Rectifier Device Data,

MUR490E, MUR4100E

20 1000 200 TJ = 175°C TJ = 175°C 25°C 40 10 20 100°C 100°C 10 7.0 4.0 2.0 5.0 1.0 25°C 0.4 0.2 0.1 3.0 0.04 0.02 *The curves shown are typical for the highest voltage 0.01 device in the voltage grouping. Typical reverse current 2.0 0.004 for lower voltage selections can be estimated from these 0.002 same curves if VR is sufficiently below rated VR. 0.001 0 100 200 300 400 500 600 700 800 900 1000 1.0 VR, REVERSE VOLTAGE (VOLTS) 0.7 Figure 2. Typical Reverse Current* 0.5 0.3 10 Rated VR 0.2 R 8.0 JA = 28°C/W 0.1 6.0 0.07 4.0 dc 0.05 SQUARE WAVE 2.0 0.03 0.02000.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.82050 100 150 200 250 vF, INSTANTANEOUS VOLTAGE (VOLTS) TA, AMBIENT TEMPERATURE (°C)

Figure 1. Typical Forward Voltage Figure 3. Current Derating

(Mounting Method #3 Per Note 1) 10 70 9.0 TJ = 175°C 60 8.0 50 5.0 7.0 40 TJ = 25°C 6.0 10 30 5.0 (Capacitive IPK =20 4.0 Load) IAV dc 20 3.0

SQUAREWAVE

2.0 1.0 9.0 8.0 0 7.0 0 1.0 2.0 3.0 4.0 5.0 0 10 20 30 40 50 IF(AV), AVERAGE FORWARD CURRENT (AMPS) VR, REVERSE VOLTAGE (VOLTS)

Figure 4. Power Dissipation Figure 5. Typical Capacitance Rectifier Device Data 3

PF(AV), AVERAGE POWER DISSIPATION (WATTS) iF, INSTANTANEOUS FORWARD CURRENT (AMPS) C, CAPACITANCE (pF) IR, REVERSE CURRENT ( A)IF(AV), AVERAGE FORWARD CURRENT (AMPS), +VDD IL 40 H COIL

BVDUT VD ID MERCURY

SWITCH ID

IL DUT

S1

VDD

t0 t1 t2 t Figure 6. Test Circuit Figure 7. Current–Voltage Waveforms The unclamped inductive switching circuit shown in ponent resistances. Assuming the component resistive ele- Figure 6 was used to demonstrate the controlled avalanche ments are small Equation (1) approximates the total energy capability of the new “E’’ series Ultrafast rectifiers. A mercury transferred to the diode. It can be seen from this equation switch was used instead of an electronic switch to simulate a that if the VDD voltage is low compared to the breakdown noisy environment when the switch was being opened. voltage of the device, the amount of energy contributed by When S1 is closed at t0 the current in the inductor IL ramps the supply during breakdown is small and the total energy up linearly; and energy is stored in the coil. At t1 the switch is can be assumed to be nearly equal to the energy stored in opened and the voltage across the diode under test begins to the coil during the time when S1 was closed, Equation (2). rise rapidly, due to di/dt effects, when this induced voltage The oscilloscope picture in Figure 8, shows the information reaches the breakdown voltage of the diode, it is clamped at obtained for the MUR8100E (similar die construction as the BVDUT and the diode begins to conduct the full load current MUR4100E Series) in this test circuit conducting a peak cur- which now starts to decay linearly through the diode, and rent of one ampere at a breakdown voltage of 1300 volts, goes to zero at t2. and using Equation (2) the energy absorbed by the By solving the loop equation at the point in time when S1 is MUR8100E is approximately 20 mjoules. opened; and calculating the energy that is transferred to the Although it is not recommended to design for this condi- diode it can be shown that the total energy transferred is tion, the new “E’’ series provides added protection against equal to the energy stored in the inductor plus a finite amount those unforeseen transient viruses that can produce unex- of energy from the VDD power supply while the diode is in plained random failures in unfriendly environments. breakdown (from t1 to t2) minus any losses due to finite com- EQUATION (1): CH1 500V A 20 s 953 V VERT CHANNEL 2: BV CH2 50mV

IL

W 1 LI DUT 0.5 AMPS/DIV.AVAL 2 LPK BVDUT–VDD CHANNEL 1:

V

EQUATION (2): DUT500 VOLTS/DIV. 1 2WAVAL LI2 LPK TIME BASE: 20 s/DIV. 1 ACQUISITIONS 217:33 HRS SAVEREF SOURCE STACK CH1 CH2 REF REF Figure 8. Current–Voltage Waveforms 4 Rectifier Device Data,

NOTE 1 — AMBIENT MOUNTING DATA Data shown for thermal resistance junction–to–ambient

(RθJA) for the mountings shown is to be used as typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured. TYPICAL VALUES FOR RθJA IN STILL AIR Mounting Lead Length, L (IN) Method 1/8 1/4 1/2 3/4 Units 1 50 51 53 55 °C/W 2 RθJA 58 59 61 63 °C/W 3 28 °C/W MOUNTING METHOD 1 P.C. Board Where Available Copper Surface area is small. L L

ÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉ

MOUNTING METHOD 2 Vector Push–In Terminals T–28LL

ÉÉÉÉÉÉÉÉÉÉÉÉ

MOUNTING METHOD 3 P.C. Board with 1–1/2″ x 1–1/2″ Copper Surface

ÉÉ

ÉÉ L = 1/2″

ÉÉ ÉÉ ÉÉ ÉÉ

ÉÉ Board Ground Plane

ÉÉ Rectifier Device Data 5

,

PACKAGE DIMENSIONS B D NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982. 1 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS

K DIM MIN MAX MIN MAX

A 0.370 0.380 9.40 9.65 B 0.190 0.210 4.83 5.33 D 0.048 0.052 1.22 1.32 K 1.000 ––– 25.40 –––

A STYLE 1:

PIN 1. CATHODE 2. ANODE

K CASE 267–03 ISSUE C

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