Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MSRB860–1/D D2PAK–SL Straight Lead

Order this document SEMICONDUCTOR TECHNICAL DATA by MSRB860–1/D D2PAK–SL Straight Lead SOFT RECOVERY Designed for use as free wheeling diodes in variable speed motor control POWER RECTIFIER applications and other average frequency switching power supplies. These 8.0 AMPERES state–of–the–art devices have the following features: 600 VOLTS • Soft Recovery with Guaranteed Low Reverse Recovery Charge (QRR) and Peak Reverse Recovery Current (IRRM) • 150°C Operating Junction Temperature • Epoxy meets UL94, VO @ 1/8″ • Low Forward Voltage • Low Leakage Current • High Temperature Glass Passivated Junc...
Author: เดชเพียร Shared: 8/19/19
Downloads: 743 Views: 1634

Content

Order this document SEMICONDUCTOR TECHNICAL DATA by MSRB860–1/D D2PAK–SL Straight Lead

SOFT RECOVERY Designed for use as free wheeling diodes in variable speed motor control POWER RECTIFIER applications and other average frequency switching power supplies. These 8.0 AMPERES state–of–the–art devices have the following features: 600 VOLTS • Soft Recovery with Guaranteed Low Reverse Recovery Charge (QRR) and Peak Reverse Recovery Current (IRRM) • 150°C Operating Junction Temperature • Epoxy meets UL94, VO @ 1/8″ • Low Forward Voltage • Low Leakage Current • High Temperature Glass Passivated Junction Mechanical Characteristics: • Case: Molded Epoxy • Weight: 1.9 Grams (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds • Shipped in 50 Units per Plastic Tube CASE 418C–01, Style 22 • Marking: MSRB860 D PAK–SL MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 600 V Working Peak Reverse Voltage VRWM DC Blocking Voltage VR Average Rectified Forward Current (At Rated VR, TC = 125°C) IO 8.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 125°C) IFRM 16 A Non–Repetitive Peak Surge Current IFSM 100 A (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) Storage / Operating Case Temperature Tstg, TC – 65 to 150 °C Operating Junction Temperature TJ – 65 to 150 °C THERMAL CHARACTERISTICS Thermal Resistance — Junction–to–Case RJC 1.6 °C/W Thermal Resistance — Junction–to–Ambient RJA 72.8 ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (1) (IF = 8.0 A) VF TJ = 25°C TJ = 150°C V 1.7 1.3 Typical 1.4 1.1 Maximum Instantaneous Reverse Current (VR = 600 V) IR TJ = 25°C TJ = 150°C A 10 1000 Typical 2.0 80 Maximum Reverse Recovery Time (2) (VR = 400 V, IF = 8.0 A, di/dt = 200 A/s) trr TJ = 25°C TJ = 125°C ns 120 190 Typical 95 125 Typical Recovery Softness Factor (VR = 400 V, IF = 8.0 A, di/dt = 200 A/s) s = tb/ta 2.5 3.0 Typical Peak Reverse Recovery Current (VR = 400 V, IF = 8.0 A, di/dt = 200 A/s) IRRM 5.8 8.3 A Typical Reverse Recovery Charge (VR = 400 V, IF = 8.0 A, di/dt = 200 A/s) QRR 350 700 nC This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. (1) Pulse Test: Pulse Width ≤ 380 µs, Duty Cycle ≤ 2% (2) TRR measured projecting from 25% of IRRM to zero current Switchmode is a trademark of Motorola, Inc. Mototororloa,l aIn cR. e19c9ti7fier Device Data 1,

TYPICAL ELECTRICAL CHARACTERISTICS

100 100 TJ = 150°C 10 125°C 100°C 1.0 25°C TJ = 150°C ° 0.1100 C 100 200 300 400 500 600 25°C VR, REVERSE VOLTAGE (VOLTS) 10 Figure 2. Typical Reverse Current 12 dc 8.0 SQUARE WAVE 6.0 4.0 2.0 RATED VR APPLIED 1.0 0 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 0 40 80 120 160 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) TC, CASE TEMPERATURE (°C)

Figure 1. Typical Forward Voltage Figure 3. Current Derating, Case

3.0 16 2.5 2.0 dc SQUARE WAVE dc 1.5 8.0 SQUARE WAVE 6.0 1.0 4.0 0.5 RATED VR APPLIED 2.0 TJ = 150°C00040 80 120 160 0 2.0 4.0 6.0 8.0 10 12 14 TA, AMBIENT TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (AMPS)

Figure 4. Current Derating, Ambient Figure 5. Power Dissipation

2 Motorola Rectifier Device Data IF(AV), AVERAGE FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) PF(AV), AVERAGE POWER DISSIPATION (WATTS) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) IR, REVERSE CURRENT ( A),

TYPICAL ELECTRICAL CHARACTERISTICS

160 250 TJ = 25°C TJ = 125°C140 VR = 400VV= 400 V 200 R IF = 16 A 100 150 IF = 16 A 808A8A60 1004A4A00100 200 300 400 500 100 200 300 400 500 dIF/dt (A/S) dIF/dt (A/S)

Figure 6. Typical Reverse Recovery Time Figure 7. Typical Reverse Recovery Time

8.0 14 IF = 16 A 12 IF = 16 A 6.0 108A4A8.08A4.04A6.0 4.0 2.0 TJ = 25°C 2.0 TJ = 125°C VR = 400 V VR = 400V00100 200 300 400 500 100 200 300 400 500 dIF/dt (A/S) dIF/dt (A/S)

Figure 8. Typical Peak Reverse Recovery Figure 9. Typical Peak Reverse Recovery Current Current

350 900 700 IF = 16 A 250 IF = 16 A 600 200 5008A8A150 4004A4A300 50 TJ = 25°C TJ = 125°C V = 400 V 100R VR = 400V00100 200 300 400 500 100 200 300 400 500 dIF/dt (A/S) dIF/dt (A/S)

Figure 10. Typical Reverse Recovery Charge Figure 11. Typical Reverse Recovery Charge Motorola Rectifier Device Data 3

QRR, REVERSE RECOVERY CHARGE (nC) IRRM, PEAK REVERSE RECOVERY CURRENT (AMPS) t rr , REVERSE RECOVERY TIME (ns) QRR, REVERSE RECOVERY CHARGE (nC) IRRM, PEAK REVERSE RECOVERY CURRENT (AMPS) t rr, REVERSE RECOVERY TIME (ns), 90 250 80 IF = 16 A IF = 16 A 70 2008A8A304A4A20 50 TJ = 25°C TJ = 125°C10 VR = 400 V VR = 400V00100 200 300 400 500 100 200 300 400 500 dlF/dt (A/S) dIF/dt (A/S)

Figure 12. Typical Switching Off Losses Figure 13. Typical Switching Off Losses

1.0 D = 0.5 0.1 0.1 0.05 P(pk) ZθJC(t) = r(t) RθJC 0.01 RθJC = 1.6°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN SINGLE PULSE t1 t READ TIME AT t2 1TJ(pk) – T = PDUTY CYCLE, D = t /t C (pk) ZθJC(t) 1 2 0.01 0.01 0.1 1.0 10 100 1000 t, TIME (ms)

Figure 14. Thermal Response

4 Motorola Rectifier Device Data r(t), TRANSIENT THERMAL RESPONSE EOFF, SWITCHING OFF LOSSES ( J) (NORMALIZED) EOFF, SWITCHING OFF LOSSES ( J),

PACKAGE DIMENSIONS C E

–B– V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 4 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX

WAA0.340 0.380 8.64 9.65

B 0.380 0.405 9.65 10.29123C0.160 0.190 4.06 4.83 D 0.020 0.035 0.51 0.89 E 0.045 0.055 1.14 1.40 –T– F 0.039 REF 1.00 REF SEATINGFKG0.100 BSC 2.54 BSCPLANESH0.080 0.110 2.03 2.79 J 0.018 0.025 0.46 0.64 K 0.280 0.360 7.11 9.14 S 0.276 REF 7.00 REF

GJV0.045 0.055 1.14 1.40W 0.423 0.462 10.75 11.75 D 3 PL H

0.13 (0.005) MTBMSTYLE 2:PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN

CASE 418C–01 ISSUE O Motorola Rectifier Device Data 5

, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 Mfax: email is hidden – TOUCHTONE 1–602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 – http://sps.motorola.com/mfax INTERNET: SPS home–http://motorola.com/sps 6 ◊ Motorola Rectifier MDSeRviBce86 D0–a1ta/D]
15

Similar documents

Order this document SEMICONDUCTOR TECHNICAL DATA by MSR860/D  Plastic TO–220 Package
Order this document SEMICONDUCTOR TECHNICAL DATA by MSR860/D Plastic TO–220 Package Designed for use as free wheeling diodes in variable speed motor control applications and other average frequency switching power supplies. These SOFT RECOVERY state–of–the–art devices have the following features: P
Order this document SEMICONDUCTOR TECHNICAL DATA by MRS1504T3/D SMB Power Surface Mount Package
Order this document SEMICONDUCTOR TECHNICAL DATA by MRS1504T3/D SMB Power Surface Mount Package Features mesa epitaxial construction with glass passivation. STANDARD RECOVERY Ideally suited for high frequency switching power supplies; free RECTIFIER wheeling diodes and polarity protection diodes. 1.
Order this document SEMICONDUCTOR TECHNICAL DATA by MR850/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MR850/D Axial lead mounted fast recovery power rectifiers are designed for special applications such as dc power supplies, inverters, converters, ultrasonic systems, choppers, low RF interference and free wheeling diodes. A complete line of fast re
Order this document SEMICONDUCTOR TECHNICAL DATA by MR750/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MR750/D • Current Capacity Comparable to Chassis Mounted Rectifiers • Very High Surge Capacity • Insulated Case Mechanical Characteristics: • Case: Epoxy, Molded MR754 and MR760 are Motorola Preferred Devices • Weight: 2.5 grams (approximately) •
Order this document SEMICONDUCTOR TECHNICAL DATA by MR2835S/D  • High Power Capability SUPPRESSOR • Economical 24 V – 32 V
Order this document SEMICONDUCTOR TECHNICAL DATA by MR2835S/D .designed for applications requiring a diode with reverse avalanche characteris- tics for use as reverse power transient suppressor. Developed to suppress transients in the automotive system, this device operates in reverse mode as power
Order this document SEMICONDUCTOR TECHNICAL DATA by MR2535L/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MR2535L/D .designed for applications requiring a low voltage rectifier with reverse avalanche characteristics for use as reverse power transient suppressors. Developed to suppress transients in the automotive system, these devices MEDIUM CURRENT op
Order this document SEMICONDUCTOR TECHNICAL DATA by MGRB2025CT/D  • Planar Epitaxial Construction 20 AMPERES • Nitride Passivation for Stable Blocking Characteristics 250 VOLTS
Order this document SEMICONDUCTOR TECHNICAL DATA by MGRB2025CT/D .ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: GALLIUM ARSENIDE RECTIFIER • Planar Epitaxial Construction 20 AMPE
Order this document SEMICONDUCTOR TECHNICAL DATA by MGRB2018CT/D  • Planar Epitaxial Construction RECTIFIER • Nitride Passivation for Stable Blocking Characteristics 20 AMPERES
Order this document SEMICONDUCTOR TECHNICAL DATA by MGRB2018CT/D .ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: GALLIUM ARSENIDE • Planar Epitaxial Construction RECTIFIER • Nitri
Order this document SEMICONDUCTOR TECHNICAL DATA by MGRB1018/D  • Planar Epitaxial Construction GALLIUM ARSENIDE • Nitride Passivation for Stable Blocking Characteristics RECTIFIER
Order this document SEMICONDUCTOR TECHNICAL DATA by MGRB1018/D .ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction GALLIUM ARSENIDE • Nitride Passivati
Order this document SEMICONDUCTOR TECHNICAL DATA by MGR2025CT/D  • Planar Epitaxial Construction 20 AMPERES • Nitride Passivation for Stable Blocking Characteristics 250 VOLTS
Order this document SEMICONDUCTOR TECHNICAL DATA by MGR2025CT/D .ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: GALLIUM ARSENIDE RECTIFIER • Planar Epitaxial Construction 20 AMPER
Order this document SEMICONDUCTOR TECHNICAL DATA by MGR2018CT/D  • Planar Epitaxial Construction RECTIFIER • Nitride Passivation for Stable Blocking Characteristics 20 AMPERES
Order this document SEMICONDUCTOR TECHNICAL DATA by MGR2018CT/D .ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: GALLIUM ARSENIDE • Planar Epitaxial Construction RECTIFIER • Nitrid
Order this document SEMICONDUCTOR TECHNICAL DATA by MGR1018/D  • Planar Epitaxial Construction GALLIUM ARSENIDE • Nitride Passivation for Stable Blocking Characteristics RECTIFIER
Order this document SEMICONDUCTOR TECHNICAL DATA by MGR1018/D .ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction GALLIUM ARSENIDE • Nitride Passivatio
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRV7030CTL/D   D3PAK Power Surface Mount Package
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRV7030CTL/D Motorola Preferred Device D3PAK Power Surface Mount Package SCHOTTKY BARRIER Employing the Schottky Barrier principle in a large area metal–to–silicon power RECTIFIER rectifier. Features epitaxial construction with oxide passivation
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRS340T3/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRS340T3/D .employing the Schottky Barrier principle in a large area metal–to–silicon Motorola Preferred Device power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRS240LT3/D SMB Power Surface Mount Package
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRS240LT3/D SMB Power Surface Mount Package .employing the Schottky Barrier principle in a metal–to–silicon power SCHOTTKY BARRIER rectifier. Features epitaxial construction with oxide passivation and metal RECTIFIER overlay contact. Ideally suite
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRS2040LT3/D SMB Power Surface Mount Package
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRS2040LT3/D SMB Power Surface Mount Package .employing the Schottky Barrier principle in a metal–to–silicon power SCHOTTKY BARRIER rectifier. Features epitaxial construction with oxide passivation and metal RECTIFIER overlay contact. Ideally suit
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRS1540T3/D SMB Power Surface Mount Package
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRS1540T3/D SMB Power Surface Mount Package .employing the Schottky Barrier principle in a metal–to–silicon power SCHOTTKY BARRIER rectifier. Features epitaxial construction with oxide passivation and metal RECTIFIER overlay contact. Ideally suite
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRS140T3/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRS140T3/D .employing the Schottky Barrier principle in a large area metal–to–silicon Motorola Preferred Device power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRS140LT3/D SMB Power Surface Mount Package
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRS140LT3/D SMB Power Surface Mount Package .employing the Schottky Barrier principle in a metal–to–silicon power SCHOTTKY BARRIER rectifier. Features epitaxial construction with oxide passivation and metal RECTIFIER overlay contact. Ideally suite
Order this document  Surface Mount Power Package Motorola Preferred Device
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRS130LT3/D Surface Mount Power Package Motorola Preferred Device .Employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal ove
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRS1100T3/D  Surface Mount Power Package
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRS1100T3/D Surface Mount Power Package Motorola Preferred Device Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction w
Order this document
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRP60035CTL/D Motorola Preferred Device The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: LOW V • FDual Diode Construction — May Be Parall
Order this document  SWITCHMODE Power Rectifier
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRP40045CTL/D SWITCHMODE Power Rectifier .using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: Features: SCHOTTKY BARRIER • Dual Diode Construction — May be Paralleled for
Order this document  SWITCHMODE Power Rectifier
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRP400100CTL/D SWITCHMODE Power Rectifier .using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: Features: SCHOTTKY BARRIER • Dual Diode Construction — May be Paralleled fo
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRP30060CT/D   POWERTAP II Package SCHOTTKY BARRIERRECTIFIER
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRP30060CT/D POWERTAP II Package SCHOTTKY BARRIERRECTIFIER .employing the Schottky Barrier principle in a large area metal–to–silicon 300 AMPERES power diode. State of the art geometry features epitaxial construction with oxide 60 VOLTS passivat
Order this document
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRP30045CT/D Motorola Preferred Devices .using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Dual Diode Construction — May Be Paralleled for Higher Current Output SCHOT
Order this document  POWERTAP III Package
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRP30035L/D POWERTAP III Package .employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation SCHOTTKY BARRIER and metal overlay contact.
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRP20060CT/D   POWERTAP II Package SCHOTTKY BARRIERRECTIFIER
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRP20060CT/D POWERTAP II Package SCHOTTKY BARRIERRECTIFIER .employing the Schottky Barrier principle in a large area metal–to–silicon 200 AMPERES power diode. State of the art geometry features epitaxial construction with oxide 60 VOLTS passivat
Order this document
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRP20045CT/D Motorola Preferred Devices .using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Dual Diode Construction — May Be Paralleled for Higher Current Output SCHOT
Order this document  POWERTAP III Package
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRP20035L/D POWERTAP III Package .employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation SCHOTTKY BARRIER and metal overlay contact.