Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MR2835S/D • High Power Capability SUPPRESSOR • Economical 24 V – 32 V

Order this document SEMICONDUCTOR TECHNICAL DATA by MR2835S/D .designed for applications requiring a diode with reverse avalanche characteris- tics for use as reverse power transient suppressor. Developed to suppress transients in the automotive system, this device operates in reverse mode as power zener diode and will protect expensive modules such as OVERVOLTAGE ignition, injection and autoblocking systems from overvoltage conditions. TRANSIENT • High Power Capability SUPPRESSOR • Economical 24 V – 32 V MAXIMUM RATINGS Parameters Symbol Value Unit DC Blocking Voltage VR 23 V Peak Repetitive...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MR2835S/D

.designed for applications requiring a diode with reverse avalanche characteris- tics for use as reverse power transient suppressor. Developed to suppress transients in the automotive system, this device operates in reverse mode as power zener diode and will protect expensive modules such as OVERVOLTAGE ignition, injection and autoblocking systems from overvoltage conditions. TRANSIENT • High Power Capability SUPPRESSOR • Economical 24 V – 32 V MAXIMUM RATINGS Parameters Symbol Value Unit DC Blocking Voltage VR 23 V Peak Repetitive Reverse Surge Current IRSM A (Time Constant = 10 ms, TC = 25°C) 62 Non Repetitive Peak Surge Current IFSM A (Halfwave, Single Phase, 50 Hz) 400 Storage Temperature Tstg –40 to +150 °C Maximum Operating Junction Temperature TJ –40 to +150 °C THERMAL CHARACTERISTICS CASE 460–02 Parameters Symbol Value Unit Thermal Resistance Junction to Case RJC 1.0 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Instantaneous Forward Voltage (IF = 100 A) (1) VF — 1.1 V Reverse Current (VR = 20 V) (1) IR — 5.0 A Breakdown Voltage (IZ = 100 mA) (1) V(BR) 24 32 V Breakdown Voltage (IZ = 80 A, TC = 85°C, PW = 80 µs) V(BR) — 40 V Breakdown Voltage Temperature Coefficient V(BR)TC — 0.09 %/°C Forward Voltage Temperature Coefficient (IF = 10 mA) VFTC — –2.0* mV/°C MECHANICAL CHARACTERISTICS Finish All External Surfaces are Corrosion Resistant Polarity Cathode to Terminal Weight 1.78 g* Maximum Temperature for Soldering 260°C for 10 s Using Belt Furnace 1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2%. * Typical di/dt LIMITATION 2.0 OHMS 100H0– 150 V 50 mF MR2835S Figure 1. Load Dump Test Circuit Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. REV 1 Motorola Power Products Division Device Data 1 Motorola, Inc. 1997, 100 1000 t (37%) = TIME CONSTANT t (50%) = 0.7 t (37%) 80 di/dt < 1.0 AMP/s T = 25°Ct (10%) = 2.3 t (37%) C 20 t (50%) t (37%) t (10%) 0 10 0 0.1 0.2 0.3 0.4 0.5 1.0 10 100 1000 Time (second) TIME CONSTANT (mS)

Figure 2. Load Dump Pulse Current Figure 3. Maximum Peak Reverse Current

1000 100 TC = 25°C TJ = 150°C 1.0 TJ = 100°C 0.1 0.01 TJ = 25°C 1.0 0.001 1.0 10 100 1000 0 10 20 30 TIME CONSTANT (mS) VR, REVERSE VOLTAGE (V)

Figure 4. Maximum Reverse Energie Figure 5. Typical Reverse Current

1000 10,000 TC = 25°C 100 TJ = 150°C TJ = 100°C 1000 10 TJ = 25°C 1.0 100 500 600 700 800 900 1000 1100 1.0 10 100 1000 VF, INSTANTANEOUS FORWARD VOLTAGE (mV) TIME CONSTANT (mS)

Figure 6. Typical Forward Voltage Figure 7. Maximum Peak Reverse Power

2 Motorola Power Products Division Device Data IF, INSTANTANEOUS FORWARD CURRENT (A) WRSM, PEAK REVERSE ENERGIE (J) % PRSM, PEAK REVERSE POWER (W) IR, REVERSE CURRENT ( A) IRSM, PEAK REVERSE CURRENT (A), 2800 10 1800 TIME CONSTANT = 10 ms 1600 TJ = 25°C 800 TIME CONSTANT = 100 ms 200 1.0 25 50 75 100 125 150 0.1 1.0 10 100 CASE TEMPERATURE (°C) VR (V)

Figure 8. Reverse Power Derating Figure 9. Typical Reverse Capacitance Reel of 500 Units ÎÎÎÎÎÎÎLOÎKREÎEL CARDBOARD CARRIERTAPE ÎÎÎÎÎÎÎÎÎ W1

ÎÎÎÎÎÎÎÎÎ N

COVER ÎÎÎÎÎÎÎÎÎ TAPE ÎÎÎÎÎÎÎÎÎ W3 A W2 BAR CODE LABEL

(stuck on the opposite side of the carrier holes) DIM mm T 24 B NL B NL B NLTA330 MR2835S MR2835S MR2835S YYWW YYWW YYWW N 100 W1 24.4 W2 28.5 W3 25 16 DIMENSIONS: millimeter BAR CODE

LABEL Figure 10. Reel Packing of MR2835S — Top Can Motorola Power Products Division Device Data 3

PEAK REVERSE POWER (W) CT (nF),

PACKAGE DIMENSIONS A

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

B D 2. CONTROLLING DIMENSION: MILLIMETER.

MILLIMETERS INCHES DIM MIN MAX MIN MAX A 9.1 9.5 0.358 0.374

S B 9.5 9.9 0.374 0.390C 5.2 5.6 0.205 0.220

D 6.4 6.8 0.252 0.268

K F 3.4 3.8 0.134 0.149

H 2.0 2.4 0.079 0.095 K 11.3 11.7 0.445 0.460 L 1.7 2.1 0.067 0.083

C S 6.5 6.9 0.256 0.272 H L F CASE 460–02 ISSUE A FOOTPRINT

Minimum circuit board footprint 0.0711.80 for Topcan Diode in Case 460–01 0.161 4.10 0.134 3.40 0.157 4.00 0.244 6.20

DIMENSIONS : inchesmm TOLERANCES

0.1 0.004 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 81–3–3521–8315 Mfax: email is hidden – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET: http://www.mot.com/SPS/ 4 ◊ Motorola Power Products Division DevMicRe2 D83a5taS/D]
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Features Package Applications Description Symbol
SEMICONDUCTORRHRU50120 April 1995 50A, 1200V Hyperfast Diode Features Package • Hyperfast with Soft Recovery .tRR Q t3 > 01 +V L1 t≤ A(MIN)1 R4 10 0 dIFtLIRR t LOOP F dt 2 tA tBRt21 DUT Q4 0.25 IRM t3 IRM C1R04VR Q3 -V2 R -V3 4 VRM FIGURE 1. tRR TEST CIRCUIT
Features Package Applications
SEMICONDUCTORRHRU150120 September 1995 150A, 1200V Hyperfast Diode Features Package • Hyperfast with Soft Recovery .tRR Q t3 > 01 +V L1 t≤ A(MIN)1 R4 10 0 dIFtLIRR t LOOP F2 dt tA tB R2 DUT 0t1 Q4 0.25 IRM t3 IRM C1R04VR Q3 -V2 R -V3 4 VRM FIGURE 1. tRR TEST CIRCUIT FIGURE 2. tRR WAVEFORMS AND DEFIN