Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MGR2025CT/D • Planar Epitaxial Construction 20 AMPERES • Nitride Passivation for Stable Blocking Characteristics 250 VOLTS

Order this document SEMICONDUCTOR TECHNICAL DATA by MGR2025CT/D .ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: GALLIUM ARSENIDE RECTIFIER • Planar Epitaxial Construction 20 AMPERES • Nitride Passivation for Stable Blocking Characteristics 250 VOLTS • Monolithic Dual Die Construction – May be Paralleled for High Current Output (10A per leg or 20A per package) • Epoxy Meets UL94, VO @ 1/8″ 1 • Hyperfast and Soft Reverse Recovery Over Specified Temperature 2, 4 Range (15 ns) 3...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MGR2025CT/D

.ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: GALLIUM ARSENIDE

RECTIFIER

• Planar Epitaxial Construction 20 AMPERES • Nitride Passivation for Stable Blocking Characteristics 250 VOLTS • Monolithic Dual Die Construction – May be Paralleled for High Current Output (10A per leg or 20A per package) • Epoxy Meets UL94, VO @ 1/8″ 1 • Hyperfast and Soft Reverse Recovery Over Specified Temperature 2, 4 Range (15 ns) 3 4 Mechanical Characteristics • Case: Epoxy, Molded • Weight: 1.9 grams (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads 1 are Readily Solderable 2 • Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 3 CASE 221A-06 • Shipped 50 units per plastic tube TO-220AB • Marking: MGR2025CT MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 250 V Working Peak Reverse Voltage VRWM DC Blocking Voltage VR DC Forward Current Per Leg IDC 10 A (TC = 95°C) Peak Repetitive Forward Current Per Leg IFRM 20 A (At Rated VR, Square Wave, 20 kHz, TC = 25°C) Non–Repetitive Peak Surge Current Per Package IFSM 40 A (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) Operating Junction Temperature and Storage Temperature TJ, Tstg –55 to 175 °C THERMAL CHARACTERISTICS Thermal Resistance – Junction to Case Per Leg RθJC 3.1 °C/W Thermal Resistance – Junction to Ambient Per Leg RθJA 64 ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (1), see Figure 2 Per Leg VF TJ=25°C TJ=125°C V (IF = 10 A) 2.2 2.5 (IF = 5 A) 1.5 1.6 Maximum Instantaneous Reverse Current, see Figure 4 Per Leg IR TJ=25°C TJ=125°C µA (VR = 250 V) 25 440 (VR = 125 V) 2 125 Typical Reverse Recovery Time (2) Per Leg trr TJ=25°C TJ=125°C ns (VR = 200 V, IF = 5 A, di/dt = 200 A/µs) 11.8 12.0 (VR = 200 V, IF = 10 A, di/dt = 200 A/µs) 12.2 12.2 Typical Peak Reverse Recovery Current Per Leg IRM TJ=25°C TJ=125°C A (VR = 200 V, IF = 5 A, di/dt = 200 A/µs) 1.4 1.4 (VR = 200 V, IF = 10 A, di/dt = 200 A/µs) 1.5 1.5 Note: This data sheet contains advance information only and is subject to change without notice. (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%. (2) trr measured projecting from 25% of IRM to ground. M Moottoororolal,a In Rc.F 1 9D95evice Data 1, 100 100 50 50 20 20 TJ = 175°C TJ = 25°C TJ = 25°C 10 10 TJ = 125°C TJ = 175°C TJ = 125°C 5.0 5.0 2.0 2.0 1.0 1.0 0.5 0.5 0.2 0.2 0.1 0.1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VF , INSTANTANEOUS FORWARD VOLTAGE (V) VF , MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (V)

Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage

1000 1000 TJ = 125°C 100 TJ = 175°C 100 10 10 TJ = 125°C TJ = 25°C110.1 0.1 0.01 TJ = 25°C 0.01 0.001 0.0010 25 50 75 100 125 150 175 200 225 250 0 25 50 75 100 125 150 175 200 225 250 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V)

Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current

2 Motorola RF Device Data IR , REVERSE CURRENT ( A) I F , INSTANTANEOUS FORWARD CURRENT (A) IR , MAXIMUM REVERSE CURRENT ( A) I F , INSTANTANEOUS FORWARD CURRENT (A), 16 60 dc freq = 20 kHz TJ = 175°C square wave dc 14 Ipk/Io = square wave Ipk/Io = 8.0 30 6.0 4.0 2.000050 100 150 200 0 4.0 8.0 12 16 TC, CASE TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (A)

Figure 5. Current Derating Per Leg Figure 6. Forward Power Dissipation Per Leg

20 20 VR = 200 V VR = 200 V 15 15 IF = 10 A IF = 10 A IF = 1 A IF = 5 A IF = 1 A 10 IF = 5 A 10 5.0 5.0 50 100 150 200 250 300 50 100 150 200 250 300 di/dt, CURRENT SLEW RATE (A/s) di/dt, CURRENT SLEW RATE (A/s)

Figure 7. Typical trr Characteristics, TJ = 25°C Figure 8. Typical trr Characteristics, TJ = 125°C

0 0 VR = 200 V VR = 200 V – 0.5 – 0.5 – 1.0 – 1.0 IF = 1 A IF = 1 A – 1.5 – 1.5 IF = 10 A – 2.0 – 2.0 IF = 10 A IF = 5 A – 2.5 – 2.5 IF = 5 A – 3.0 – 3.0 50 100 150 200 250 300 50 100 150 200 250 300 di/dt, CURRENT SLEW RATE (A/s) di/dt, CURRENT SLEW RATE (A/s)

Figure 9. Typical IRM Characteristics, TJ = 25°C Figure 10. Typical IRM Characteristics, TJ = 125°C Motorola RF Device Data 3

IRM, MAXIMUM REVERSE CURRENT (A) t rr , REVERSE RECOVERY TIME (ns) I O , AVERAGE FORWARD CURRENT (A) IRM, MAXIMUM REVERSE CURRENT (A) t rr , REVERSE RECOVERY TIME (ns) PFO, AVERAGE POWER DISSIPATION (W), 1.0 0.5 SINGLE PULSE 0.2 0.1 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 t, TIME (s)

Figure 11. Typical Thermal Response

200 TJ = 25°C12510 20 50 100 200 VR, REVERSE VOLTAGE (V)

Figure 12. Typical Capacitance

4 Motorola RF Device Data R(T), NORMALIZED TRANSIENT THERMAL RESISTANCE C, CAPACITANCE (pF),

PACKAGE DIMENSIONS

NOTES: –T– SEATING 1. DIMENSIONING AND TOLERANCING PER ANSIPLANE Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.

BFC3. DIMENSION Z DEFINES A ZONE WHERE ALL T S BODY AND LEAD IRREGULARITIES ARE

ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX

QAA0.570 0.620 14.48 15.75

B 0.380 0.405 9.66 10.28123USTYLE 6: C 0.160 0.190 4.07 4.82

H PIN 1. ANODE D 0.025 0.035 0.64 0.88

2. CATHODE F 0.142 0.147 3.61 3.73

K 3. ANODE G 0.095 0.105 2.42 2.66 Z 4. CATHODE H 0.110 0.155 2.80 3.93

J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52

LRN0.190 0.210 4.83 5.33

Q 0.100 0.120 2.54 3.04

VJR0.080 0.110 2.04 2.79 G S 0.045 0.055 1.15 1.39T 0.235 0.255 5.97 6.47 D U 0.000 0.050 0.00 1.27 N V 0.045 ––– 1.15 –––Z ––– 0.080 ––– 2.04 CASE 221A–06 ISSUE Y Motorola RF Device Data 5

, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: email is hidden – TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 6 ◊ Motorola RMFG RD2e0v2ic5eC TD/Data]
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Features Package Applications Description Symbol
SEMICONDUCTORRHRU50120 April 1995 50A, 1200V Hyperfast Diode Features Package • Hyperfast with Soft Recovery .tRR Q t3 > 01 +V L1 t≤ A(MIN)1 R4 10 0 dIFtLIRR t LOOP F dt 2 tA tBRt21 DUT Q4 0.25 IRM t3 IRM C1R04VR Q3 -V2 R -V3 4 VRM FIGURE 1. tRR TEST CIRCUIT
Features Package Applications
SEMICONDUCTORRHRU150120 September 1995 150A, 1200V Hyperfast Diode Features Package • Hyperfast with Soft Recovery .tRR Q t3 > 01 +V L1 t≤ A(MIN)1 R4 10 0 dIFtLIRR t LOOP F2 dt tA tB R2 DUT 0t1 Q4 0.25 IRM t3 IRM C1R04VR Q3 -V2 R -V3 4 VRM FIGURE 1. tRR TEST CIRCUIT FIGURE 2. tRR WAVEFORMS AND DEFIN
Features Package Applications
SEMICONDUCTORRHRP8120CC April 1995 8A, 1200V Hyperfast Dual Diode Features Package • Hyperfast with Soft Recovery .tRR dIFtQt3 > 0 I RR 1
Features Package Applications Description K
SEMICONDUCTORRHRP6120CC January 1996 6A, 1200V Hyperfast Dual Diode Features Package • Hyperfast with Soft Recovery .tRR4 LOOP Q t3 > 01 +V L1 tA(MIN)1 £ R4 10 0 dIFttLRR LOOP IF 2 dt tA tBRt21 DUT 0 Q4 0.25 IRM t3 IRM C1 R4 Q3 -V2 R -V3 4 VR VRM FIGURE 1. tRR
Features Package Applications
SEMICONDUCTORRHRG50120 April 1995 50A, 1200V Hyperfast Diode Features Package • Hyperfast with Soft Recovery .tRR Q t3 > 01 +V L1 t≤ A(MIN)1 R4 10 0 dIFtIRR t LLOOP F2 dt tA tB R2 DUT 0t1 Q4 0.25 IRM t3 IRM C1R04VR Q3 -V2 R -V3 4 VRM FIGURE 1. tRR
Features Package Applications Description
SEMICONDUCTORRHRG15120CC April 1995 15A, 1200V Hyperfast Dual Diode Features Package • Hyperfast with Soft Recovery .< 65ns JEDEC STYLE TO-247 • Operating Temperature ..+175oC ANODE 2 CATHODE • Reverse Voltage .1200V CATHODE ANODE 1 (BOTTOM SIDE • Avalanche Energy Rated METAL) • Planar Construction
Features Package Applications Description Symbol
SEMICONDUCTORRHR1Y75120CC October 1995 75A, 1200V Hyperfast Dual Diode Features Package • Hyperfast with Soft Recovery .tRR Q t3 > 01 +V L1 t≤ A(MIN)1 R4 10 0 dIFtLIRR t LOOP F2 dt tA tBRt21 DUT Q4 0.25 IRM t3 IRM C1R04VR Q3 -V2 R -V3 4 VRM FIGURE 1. tRR TEST CIRCUIT FIGURE 2. tRR WAVEFORMS AND DEFI