Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MBRV7030CTL/D D3PAK Power Surface Mount Package

Order this document SEMICONDUCTOR TECHNICAL DATA by MBRV7030CTL/D Motorola Preferred Device D3PAK Power Surface Mount Package SCHOTTKY BARRIER Employing the Schottky Barrier principle in a large area metal–to–silicon power RECTIFIER rectifier. Features epitaxial construction with oxide passivation and metal overlay 70 AMPERES contact. Ideally suited for low voltage, high frequency switching power supplies; 30 VOLTS free wheeling diodes and polarity protection diodes. • Compact Package Ideal for Automated Handling 1 • Short Heat Sink Tab Manufactured — Not Sheared 2 • Highly Stable Oxide Pass...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MBRV7030CTL/D

Motorola Preferred Device

D3PAK Power Surface Mount Package

SCHOTTKY BARRIER Employing the Schottky Barrier principle in a large area metal–to–silicon power RECTIFIER rectifier. Features epitaxial construction with oxide passivation and metal overlay 70 AMPERES contact. Ideally suited for low voltage, high frequency switching power supplies; 30 VOLTS free wheeling diodes and polarity protection diodes. • Compact Package Ideal for Automated Handling 1 • Short Heat Sink Tab Manufactured — Not Sheared 2 • Highly Stable Oxide Passivated Junction 3 • Guardring for Over–voltage Protection • Low Forward Voltage Drop • Monolithic Dual Die Construction. May be Paralleled for High Current Output. Mechanical Characteristics: 2 • Case: Epoxy, Molded 1 • Weight: 2 Grams (approximately) 3 • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • CASE 433A–01, Style 1Maximum Temperature of 260°C for 10 Seconds for Soldering D PAK • Shipped 29 Units per Plastic Tube 3 • Marking: MBRV7030CTL MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 30 V Working Peak Reverse Voltage VRWM DC Blocking Voltage VR Average Rectified Forward Current Per Leg IO 35 A (At Rated VR, TC = 135°C) Per Package 70 Peak Repetitive Forward Current Per Leg IFRM 70 A (At Rated VR, Square Wave, 20 kHz, TC = 135°C) Non–Repetitive Peak Surge Current Per Package IFSM 500 A (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) Storage / Operating Case Temperature Tstg, TC – 55 to 150 °C Operating Junction Temperature TJ – 55 to 150 °C Voltage Rate of Change (Rated VR, TJ = 25°C) dv/dt 10,000 V/s THERMAL CHARACTERISTICS Thermal Resistance — Junction–to–Case Per Leg RJC 0.59 °C/W Thermal Resistance — Junction–to–Ambient (2) Per Leg RJA 54 ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (1), see Figure 2 Per Leg VF V (IF = 35 A, TJ = 25°C) 0.50 (IF = 70 A, TJ = 25°C) 0.62 (IF = 35 A, TJ = 100°C) 0.47 Maximum Instantaneous Reverse Current, see Figure 4 Per Leg IR mA (Rated VR, TJ = 25°C) 2.0 (Rated VR, TJ = 100°C) 40 (1) Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2% (2) Rating applies when using minimum pad size, FR4 PC Board Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Designer’s and Switchmode are trademarks of Motorola, Inc. Preferred devices are Motorola recommended choices for future use and best overall value. Mototororloa,l aIn cT. M19O97S Power MOSFET Transistor Device Data 1,

TYPICAL ELECTRICAL CHARACTERISTICS

100 100 10 10 TJ = 150°C TJ = 25°C TJ = 150°C TJ = 25°C T = 100°C T = 100°C 1.0 J 1.0J00.2 0.4 0.6 0.8 0 0.2 0.4 0.6 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage

1.0 10 TJ = 150°C 0.1 1.0 TJ = 150°C TJ = 100°C 0.01 TJ = 100°C 0.1 0.001 TJ = 25°C 0.01 TJ = 25°C 0.0001 0.00001 0.001 0 10 20 30 0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)

Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current

60 30 FREQ = 20 kHz dc dc TJ = 150°C 50 25 square Ipk/Io = square wave wave 40 20 Ipk/Io = 5 Ipk/Io = 10 Ipk/Io = 30 15 Ipk/Io = 20 Ipk/Io = 5 20 10 Ipk/Io = 10 10 Ipk/Io = 20500020 40 60 80 100 120 140 160 0 25 50 75 TC, CASE TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS)

Figure 5. Current Derating (Per Leg) Figure 6. Forward Power Dissipation (Per Leg)

2 Motorola TMOS Power MOSFET Transistor Device Data I O, AVERAGE FORWARD CURRENT (AMPS) I R , REVERSE CURRENT (AMPS) I F , INSTANTANEOUS FORWARD CURRENT (AMPS) PFO, AVERAGE POWER DISSIPATION (WATTS) I R , MAXIMUM REVERSE CURRENT (AMPS) I F , INSTANTANEOUS FORWARD CURRENT (AMPS),

TYPICAL ELECTRICAL CHARACTERISTICS

100,000 TJ = 25°C 10,000 1,000 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Capacitance SAFE OPERATING AREA

1.0 P(pk) 0.1 RθJC(t) = r(t) RθJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) – TC = P(pk) RθJC(t) DUTY CYCLE, D = t1/t2 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 t, TIME (SECONDS)

Figure 8. Thermal Response

VCC + 150 V, 12 Vdc 10 mAdc 12 V 1002k2N2222 D.U.T. 2s1kHz CURRENT 2N6277 + AMPLITUDE 1004FADJUST CARBON 1 CARBON 0 –10 AMPS 1N5817

Figure 9. Test Circuit for Repetitive Reverse Current Motorola TMOS Power MOSFET Transistor Device Data 3

r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE C, CAPACITANCE (pF),

INFORMATION FOR USING THE DPAK SURFACE MOUNT PACKAGE

RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total between the board and the package. With the correct pad design. The footprint for the semiconductor packages must be geometry, the packages will self align when subjected to a the correct size to ensure proper solder connection interface solder reflow process. 0.165 0.118 4.191 3.0 0.100 2.54 0.063 1.6 0.190 0.243 4.826 6.172 inches mm POWER DISSIPATION FOR A SURFACE MOUNT DEVICE The power dissipation for a surface mount device is a dissipation can be increased. Although one can almost double function of the drain pad size. These can vary from the the power dissipation with this method, one will be giving up minimum pad size for soldering to a pad size given for area on the printed circuit board which can defeat the purpose maximum power dissipation. Power dissipation for a surface of using surface mount technology. For example, a graph of mount device is determined by TJ(max), the maximum rated RθJA versus drain pad area is shown in Figure 11. junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating 100 Board Material = 0.0625″ temperature, TA. Using the values provided on the data sheet, G–10/FR–4, 2 oz Copper PD can be calculated as follows: 1.75 Watts TA = 25°CT P = J(max) – TA

D

RθJA 60 3.0 Watts The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into 40 the equation for an ambient temperature TA of 25°C, one can 5.0 Watts calculate the power dissipation of the device. For a D3PAK device, PD is calculated as follows. 200246810 P = 150°C – 25°C A, AREA (SQUARE INCHES) D = 2.31 Watts 54°C/W Figure 10. Thermal Resistance versus Drain Pad Area for the D3PAK Package (Typical) The 54°C/W for the D3PAK package assumes the use of the recommended footprint on a glass epoxy printed circuit board Another alternative would be to use a ceramic substrate or to achieve a power dissipation of 2.31 Watts. There are other an aluminum core board such as Thermal Clad. Using a alternatives to achieving higher power dissipation from the board material such as Thermal Clad, an aluminum core surface mount packages. One is to increase the area of the board, the power dissipation can be doubled using the same drain pad. By increasing the area of the drain pad, the power footprint. 4 Motorola TMOS Power MOSFET Transistor Device Data RθJA, THERMAL RESISTANCE, JUNCTION TO AMBIENT (°C/W), SOLDER STENCIL GUIDELINES Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. Solder stencils are used to screen the optimum amount. These ÇÇÇÇÇÇ stencils are typically 0.008 inches thick and may be made of brass or stainless steel. For packages such as the SC–59, ÇÇÇÇÇÇÇÇ ÇÇ SOLDER PASTE SC–70/SOT–323, SOD–123, SOT–23, SOT–143, SOT–223, OPENINGSÇÇÇÇÇÇÇÇ ÇÇ SO–8, SO–14, SO–16, and SMB/SMC diode packages, the stencil opening should be the same as the pad size or a 1:1 ÇÇÇÇÇÇÇÇ STENCIL registration. This is not the case with the DPAK and D2PAK ÇÇÇÇÇÇÇÇ packages. If one uses a 1:1 opening to screen solder onto the drain pad, misalignment and/or “tombstoning” may occur due Figure 11. Typical Stencil for DPAK and to an excess of solder. For these two packages, the opening D2PAK Packages in the stencil for the paste should be approximately 50% of the tab area. The opening for the leads is still a 1:1 registration. Figure 12 shows a typical stencil for the DPAK and D2PAK packages. The pattern of the opening in the stencil for the drain pad is not critical as long as it allows approximately 50% of the pad to be covered with paste. SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated • When shifting from preheating to soldering, the maximum temperature of the device. When the entire device is heated temperature gradient shall be 5°C or less. to a high temperature, failure to complete soldering within a • After soldering has been completed, the device should be short time could result in device failure. Therefore, the allowed to cool naturally for at least three minutes. following items should always be observed in order to Gradual cooling should be used as the use of forced minimize the thermal stress to which the devices are cooling will increase the temperature gradient and result subjected. in latent failure due to mechanical stress. • Always preheat the device. • Mechanical stress or shock should not be applied during • The delta temperature between the preheat and soldering cooling. should be 100°C or less.* • When preheating and soldering, the temperature of the * Soldering a device without preheating can cause excessive leads and the case must not exceed the maximum thermal shock and stress which can result in damage to the temperature ratings as shown on the data sheet. When device. using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. * Due to shadowing and the inability to set the wave height to • The soldering temperature and time shall not exceed incorporate other surface mount components, the D2PAK is 260°C for more than 10 seconds. not recommended for wave soldering. Motorola TMOS Power MOSFET Transistor Device Data 5,

TYPICAL SOLDER HEATING PROFILE

For any given circuit board, there will be a group of control line on the graph shows the actual temperature that might be settings that will give the desired heat pattern. The operator experienced on the surface of a test board at or near a central must set temperatures for several heating zones, and a figure solder joint. The two profiles are based on a high density and for belt speed. Taken together, these control settings make up a low density board. The Vitronics SMD310 convection/in- a heating “profile” for that particular circuit board. On frared reflow soldering system was used to generate this machines controlled by a computer, the computer remembers profile. The type of solder used was 62/36/2 Tin Lead Silver these profiles from one operating session to the next. Figure with a melting point between 177–189°C. When this type of 18 shows a typical heating profile for use when soldering a furnace is used for solder reflow work, the circuit boards and surface mount device to a printed circuit board. This profile will solder joints tend to heat first. The components on the board vary among soldering systems but it is a good starting point. are then heated by conduction. The circuit board, because it Factors that can affect the profile include the type of soldering has a large surface area, absorbs the thermal energy more system in use, density and types of components on the board, efficiently, then distributes this energy to the components. type of solder used, and the type of board or substrate material Because of this effect, the main body of a component may be being used. This profile shows temperature versus time. The up to 30 degrees cooler than the adjacent solder joints. STEP 1 STEP 2 STEP 3 STEP 4 STEP 5 STEP 6 STEP 7 PREHEAT VENT HEATING HEATING HEATING VENT COOLING ZONE 1 “SOAK” ZONES 2 & 5 ZONES 3 & 6 ZONES 4 & 7 205° TO 219°C “RAMP” “RAMP” “SOAK” “SPIKE” PEAK AT 200°C DESIRED CURVE FOR HIGH 170°C SOLDER JOINT MASS ASSEMBLIES 160°C 150°C 150°C SOLDER IS LIQUID FOR 40 TO 80 SECONDS 100°C 140°C (DEPENDING ON ° MASS OF ASSEMBLY)100 C DESIRED CURVE FOR LOW MASS ASSEMBLIES 50°C TIME (3 TO 7 MINUTES TOTAL) TMAX Figure 12. Typical Solder Heating Profile 6 Motorola TMOS Power MOSFET Transistor Device Data,

PACKAGE DIMENSIONS

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. –T– SEATING 2. CONTROLLING DIMENSION: INCH.PLANE INCHES MILLIMETERS

BCWDIM MIN MAX MIN MAX

A 0.588 0.592 14.94 15.04

SQEB0.625 0.629 15.88 15.98

C 0.196 0.200 4.98 5.08

Y D 0.048 0.052 1.22 1.32

E 0.058 0.062 1.47 1.57

V F 0.078 0.082 1.98 2.08 NAG4.30 BSC 10.92 BSCH 0.105 0.110 2.67 2.79

J 0.018 0.022 0.46 0.56 K 0.150 0.160 3.81 4.06 N 0.373 0.377 9.47 9.58123KP0.070 0.074 1.78 1.88P Q 0.054 0.058 1.37 1.47

FXS0.313 0.317 7.95 8.05 UJU0.050 ––– 1.27 –––

V 0.044 ––– 1.12 –––

H D 2 PL W 0.066 0.070 1.68 1.78

X 0.050 0.060 1.27 1.52

G 0.13 (0.005) MTY0.107 0.111 2.72 2.82

STYLE 1: PIN 1. GATE 2. COLLECTOR

CASE 433A–01 3. EMITTER ISSUE A Motorola TMOS Power MOSFET Transistor Device Data 7

, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 Mfax: email is hidden – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET: http://motorola.com/sps 8 ◊ Motorola TMOS Power MOSFET TransistMorB DRVe7v0ic3e0 CDTaLta/D]
15

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SEMICONDUCTORRHRU50120 April 1995 50A, 1200V Hyperfast Diode Features Package • Hyperfast with Soft Recovery .tRR Q t3 > 01 +V L1 t≤ A(MIN)1 R4 10 0 dIFtLIRR t LOOP F dt 2 tA tBRt21 DUT Q4 0.25 IRM t3 IRM C1R04VR Q3 -V2 R -V3 4 VRM FIGURE 1. tRR TEST CIRCUIT
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