Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MBRS340T3/D

Order this document SEMICONDUCTOR TECHNICAL DATA by MBRS340T3/D .employing the Schottky Barrier principle in a large area metal–to–silicon Motorola Preferred Device power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the SCHOTTKY BARRIER system. RECTIFIERS • Small Compact Surface Mountable Package with J–Bend Leads 3.0 AMPERES • Rectangula...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MBRS340T3/D

.employing the Schottky Barrier principle in a large area metal–to–silicon Motorola Preferred Device power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the SCHOTTKY BARRIER system. RECTIFIERS • Small Compact Surface Mountable Package with J–Bend Leads 3.0 AMPERES • Rectangular Package for Automated Handling 40, 60 VOLTS • Highly Stable Oxide Passivated Junction • Very Low Forward Voltage Drop (0.5 Volts Max @ 3.0 A, TJ = 25°C) • Excellent Ability to Withstand Reverse Avalanche Energy Transients • Guardring for Stress Protection Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 217 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable CASE 403–03 • Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds • Shipped in 16 mm Tape and Reel, 2500 units per reel • Polarity: Notch in Plastic Body Indicates Cathode Lead • Marking: B34, B36 MAXIMUM RATINGS Rating Symbol MBRS340T3 MBRS360T3 Unit Peak Repetitive Reverse Voltage VRRM 40 60 Volts Working Peak Reverse Voltage VRWM DC Blocking Voltage VR Average Rectified Forward Current IF(AV) 3.0 @ TL = 100°C Amps 4.0 @ TL = 90°C Nonrepetitive Peak Surge Current IFSM 80 Amps (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature TJ – 65 to +125 °C THERMAL CHARACTERISTICS Thermal Resistance — Junction to Lead RθJL 11 11 °C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (1) VF Volts (iF = 3.0 A, TJ = 25°C) 0.525 0.740 Maximum Instantaneous Reverse Current (1) iR mA (Rated dc Voltage, TJ = 25°C) 2.0 0.5 (Rated dc Voltage, TJ = 100°C) 20 20 (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%. Preferred devices are Motorola recommended choices for future use and best overall value. Rev2RMeoctotriofilea,r InDce. 1v9ic96e Data 1, 3 50 2 20 TJ = 125°C TC = 100°C 1015100°C 0.7 2 0.5 1 75°C 0.3 0.5 0.2 0.2 TC = 25°C 0.1 0.1 0.05 25°C 0.07 0.02 0.05 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.404812 16 20 24 28 32 36 40 vF, INSTANTANEOUS VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)

Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current

TJ = 100°C

SQUARE

10 WAVE 3 (CAPACITIVE LOAD) DC

IPK

= 20 2 IAV012345IF(AV), AVERAGE FORWARD CURRENT (AMPS)

Figure 3. Power Dissipation

10 500 TYPICAL CAPACITANCE AT0V= 480 pF 9 RATED VOLTAGE APPLIED 8 RθJC = 10.5°C/W 400 TJ = 125°C TJ = 25°C 6 300 5 DC 4 200 3 SQUARE 2 WAVE 100 40 50 60 70 80 90 100 110 120 130 140 004812 16 20 24 28 32 36 40 TC, CASE TEMPERATURE (°C) VR, REVERSE VOLTAGE (VOLTS)

Figure 4. Current Derating (Case) Figure 5. Typical Capacitance

2 Rectifier Device Data I F(AV), AVERAGE FORWARD CURRENT (AMPS) iF , INSTANTANEOUS FORWARD CURRENT (AMPS PF(AV), AVERAGE POWER DISSIPATION (WATTS) C, CAPACITANCE (pF) I R , REVERSE CURRENT (mA),

PACKAGE DIMENSIONS S A

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN

D B DIMENSION P.

INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.260 0.280 6.60 7.11 B 0.220 0.240 5.59 6.10 C 0.075 0.095 1.90 2.41 D 0.115 0.121 2.92 3.07 H 0.0020 0.0060 0.051 0.152 J 0.006 0.012 0.15 0.30

C K 0.030 0.050 0.76 1.27P 0.020 REF 0.51 REF

S 0.305 0.320 7.75 8.13

KPJH CASE 403–03 ISSUE B Rectifier Device Data 3

, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 81–3–3521–8315 Mfax: email is hidden – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 4 ◊ CODELINE TO BE PLACED HERE RectifMieBr RDSe3v4ic0eT 3D/Data]
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Features Package Applications Description Symbol
SEMICONDUCTORRHRU50120 April 1995 50A, 1200V Hyperfast Diode Features Package • Hyperfast with Soft Recovery .tRR Q t3 > 01 +V L1 t≤ A(MIN)1 R4 10 0 dIFtLIRR t LOOP F dt 2 tA tBRt21 DUT Q4 0.25 IRM t3 IRM C1R04VR Q3 -V2 R -V3 4 VRM FIGURE 1. tRR TEST CIRCUIT
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SEMICONDUCTORRHRU150120 September 1995 150A, 1200V Hyperfast Diode Features Package • Hyperfast with Soft Recovery .tRR Q t3 > 01 +V L1 t≤ A(MIN)1 R4 10 0 dIFtLIRR t LOOP F2 dt tA tB R2 DUT 0t1 Q4 0.25 IRM t3 IRM C1R04VR Q3 -V2 R -V3 4 VRM FIGURE 1. tRR TEST CIRCUIT FIGURE 2. tRR WAVEFORMS AND DEFIN
Features Package Applications
SEMICONDUCTORRHRP8120CC April 1995 8A, 1200V Hyperfast Dual Diode Features Package • Hyperfast with Soft Recovery .tRR dIFtQt3 > 0 I RR 1
Features Package Applications Description K
SEMICONDUCTORRHRP6120CC January 1996 6A, 1200V Hyperfast Dual Diode Features Package • Hyperfast with Soft Recovery .tRR4 LOOP Q t3 > 01 +V L1 tA(MIN)1 £ R4 10 0 dIFttLRR LOOP IF 2 dt tA tBRt21 DUT 0 Q4 0.25 IRM t3 IRM C1 R4 Q3 -V2 R -V3 4 VR VRM FIGURE 1. tRR
Features Package Applications
SEMICONDUCTORRHRG50120 April 1995 50A, 1200V Hyperfast Diode Features Package • Hyperfast with Soft Recovery .tRR Q t3 > 01 +V L1 t≤ A(MIN)1 R4 10 0 dIFtIRR t LLOOP F2 dt tA tB R2 DUT 0t1 Q4 0.25 IRM t3 IRM C1R04VR Q3 -V2 R -V3 4 VRM FIGURE 1. tRR
Features Package Applications Description
SEMICONDUCTORRHRG15120CC April 1995 15A, 1200V Hyperfast Dual Diode Features Package • Hyperfast with Soft Recovery .< 65ns JEDEC STYLE TO-247 • Operating Temperature ..+175oC ANODE 2 CATHODE • Reverse Voltage .1200V CATHODE ANODE 1 (BOTTOM SIDE • Avalanche Energy Rated METAL) • Planar Construction
Features Package Applications Description Symbol
SEMICONDUCTORRHR1Y75120CC October 1995 75A, 1200V Hyperfast Dual Diode Features Package • Hyperfast with Soft Recovery .tRR Q t3 > 01 +V L1 t≤ A(MIN)1 R4 10 0 dIFtLIRR t LOOP F2 dt tA tBRt21 DUT Q4 0.25 IRM t3 IRM C1R04VR Q3 -V2 R -V3 4 VRM FIGURE 1. tRR TEST CIRCUIT FIGURE 2. tRR WAVEFORMS AND DEFI
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