Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MBRS340T3/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRS340T3/D .employing the Schottky Barrier principle in a large area metal–to–silicon Motorola Preferred Device power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the SCHOTTKY BARRIER system. RECTIFIERS • Small Compact Surface Mountable Package with J–Bend Leads 3.0 AMPERES • Rectangula...
Author:
เดชเพียร Shared: 8/19/19
Downloads: 1423 Views: 3782
Content
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRS340T3/D
.employing the Schottky Barrier principle in a large area metal–to–silicon Motorola Preferred Device power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the SCHOTTKY BARRIER system. RECTIFIERS • Small Compact Surface Mountable Package with J–Bend Leads 3.0 AMPERES • Rectangular Package for Automated Handling 40, 60 VOLTS • Highly Stable Oxide Passivated Junction • Very Low Forward Voltage Drop (0.5 Volts Max @ 3.0 A, TJ = 25°C) • Excellent Ability to Withstand Reverse Avalanche Energy Transients • Guardring for Stress Protection Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 217 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable CASE 403–03 • Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds • Shipped in 16 mm Tape and Reel, 2500 units per reel • Polarity: Notch in Plastic Body Indicates Cathode Lead • Marking: B34, B36 MAXIMUM RATINGS Rating Symbol MBRS340T3 MBRS360T3 Unit Peak Repetitive Reverse Voltage VRRM 40 60 Volts Working Peak Reverse Voltage VRWM DC Blocking Voltage VR Average Rectified Forward Current IF(AV) 3.0 @ TL = 100°C Amps 4.0 @ TL = 90°C Nonrepetitive Peak Surge Current IFSM 80 Amps (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature TJ – 65 to +125 °C THERMAL CHARACTERISTICS Thermal Resistance — Junction to Lead RθJL 11 11 °C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (1) VF Volts (iF = 3.0 A, TJ = 25°C) 0.525 0.740 Maximum Instantaneous Reverse Current (1) iR mA (Rated dc Voltage, TJ = 25°C) 2.0 0.5 (Rated dc Voltage, TJ = 100°C) 20 20 (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%. Preferred devices are Motorola recommended choices for future use and best overall value. Rev2RMeoctotriofilea,r InDce. 1v9ic96e Data 1, 3 50 2 20 TJ = 125°C TC = 100°C 1015100°C 0.7 2 0.5 1 75°C 0.3 0.5 0.2 0.2 TC = 25°C 0.1 0.1 0.05 25°C 0.07 0.02 0.05 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.404812 16 20 24 28 32 36 40 vF, INSTANTANEOUS VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current
TJ = 100°CSQUARE
10 WAVE 3 (CAPACITIVE LOAD) DCIPK
= 20 2 IAV012345IF(AV), AVERAGE FORWARD CURRENT (AMPS)Figure 3. Power Dissipation
10 500 TYPICAL CAPACITANCE AT0V= 480 pF 9 RATED VOLTAGE APPLIED 8 RθJC = 10.5°C/W 400 TJ = 125°C TJ = 25°C 6 300 5 DC 4 200 3 SQUARE 2 WAVE 100 40 50 60 70 80 90 100 110 120 130 140 004812 16 20 24 28 32 36 40 TC, CASE TEMPERATURE (°C) VR, REVERSE VOLTAGE (VOLTS)Figure 4. Current Derating (Case) Figure 5. Typical Capacitance
2 Rectifier Device Data I F(AV), AVERAGE FORWARD CURRENT (AMPS) iF , INSTANTANEOUS FORWARD CURRENT (AMPS PF(AV), AVERAGE POWER DISSIPATION (WATTS) C, CAPACITANCE (pF) I R , REVERSE CURRENT (mA),PACKAGE DIMENSIONS S A
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIND B DIMENSION P.
INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.260 0.280 6.60 7.11 B 0.220 0.240 5.59 6.10 C 0.075 0.095 1.90 2.41 D 0.115 0.121 2.92 3.07 H 0.0020 0.0060 0.051 0.152 J 0.006 0.012 0.15 0.30C K 0.030 0.050 0.76 1.27P 0.020 REF 0.51 REF
S 0.305 0.320 7.75 8.13KPJH CASE 403–03 ISSUE B Rectifier Device Data 3
, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 81–3–3521–8315 Mfax: email is hidden – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 4 ◊ CODELINE TO BE PLACED HERE RectifMieBr RDSe3v4ic0eT 3D/Data]15
Similar documents
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRS240LT3/D SMB Power Surface Mount Package .employing the Schottky Barrier principle in a metal–to–silicon power SCHOTTKY BARRIER rectifier. Features epitaxial construction with oxide passivation and metal RECTIFIER overlay contact. Ideally suite
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRS2040LT3/D SMB Power Surface Mount Package .employing the Schottky Barrier principle in a metal–to–silicon power SCHOTTKY BARRIER rectifier. Features epitaxial construction with oxide passivation and metal RECTIFIER overlay contact. Ideally suit
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRS1540T3/D SMB Power Surface Mount Package .employing the Schottky Barrier principle in a metal–to–silicon power SCHOTTKY BARRIER rectifier. Features epitaxial construction with oxide passivation and metal RECTIFIER overlay contact. Ideally suite
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRS140T3/D .employing the Schottky Barrier principle in a large area metal–to–silicon Motorola Preferred Device power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRS140LT3/D SMB Power Surface Mount Package .employing the Schottky Barrier principle in a metal–to–silicon power SCHOTTKY BARRIER rectifier. Features epitaxial construction with oxide passivation and metal RECTIFIER overlay contact. Ideally suite
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRS130LT3/D Surface Mount Power Package Motorola Preferred Device .Employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal ove
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRS1100T3/D Surface Mount Power Package Motorola Preferred Device Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction w
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRP60035CTL/D Motorola Preferred Device The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: LOW V • FDual Diode Construction — May Be Parall
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRP40045CTL/D SWITCHMODE Power Rectifier .using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: Features: SCHOTTKY BARRIER • Dual Diode Construction — May be Paralleled for
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRP400100CTL/D SWITCHMODE Power Rectifier .using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: Features: SCHOTTKY BARRIER • Dual Diode Construction — May be Paralleled fo
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRP30060CT/D POWERTAP II Package SCHOTTKY BARRIERRECTIFIER .employing the Schottky Barrier principle in a large area metal–to–silicon 300 AMPERES power diode. State of the art geometry features epitaxial construction with oxide 60 VOLTS passivat
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRP30045CT/D Motorola Preferred Devices .using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Dual Diode Construction — May Be Paralleled for Higher Current Output SCHOT
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRP30035L/D POWERTAP III Package .employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation SCHOTTKY BARRIER and metal overlay contact.
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRP20060CT/D POWERTAP II Package SCHOTTKY BARRIERRECTIFIER .employing the Schottky Barrier principle in a large area metal–to–silicon 200 AMPERES power diode. State of the art geometry features epitaxial construction with oxide 60 VOLTS passivat
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRP20045CT/D Motorola Preferred Devices .using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Dual Diode Construction — May Be Paralleled for Higher Current Output SCHOT
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRP20035L/D POWERTAP III Package .employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation SCHOTTKY BARRIER and metal overlay contact.
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRP20030CTL/D Motorola Preferred Device The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state–of–the–art device has the following LOW V features: FSCHOTTKY BARRIER • Dual Diode Constructio
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRM140T3/D POWERMITE Power Surface Mount Package SCHOTTKY BARRIER The Schottky Powermite employs the Schottky Barrier principle with a barrier metal RECTIFIER and epitaxial construction that produces optimal forward voltage drop–reverse current 1.
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRM120LT3/D POWERMITE Power Surface Mount Package SCHOTTKY BARRIER The Schottky Powermite employs the Schottky Barrier principle with a barrier metal RECTIFIER and epitaxial construction that produces optimal forward voltage drop–reverse current 1
SEMICONDUCTORRHRU50120 April 1995 50A, 1200V Hyperfast Diode Features Package • Hyperfast with Soft Recovery .tRR Q t3 > 01 +V L1 t≤ A(MIN)1 R4 10 0 dIFtLIRR t LOOP F dt 2 tA tBRt21 DUT Q4 0.25 IRM t3 IRM C1R04VR Q3 -V2 R -V3 4 VRM FIGURE 1. tRR TEST CIRCUIT
SEMICONDUCTORRHRU150120 September 1995 150A, 1200V Hyperfast Diode Features Package • Hyperfast with Soft Recovery .tRR Q t3 > 01 +V L1 t≤ A(MIN)1 R4 10 0 dIFtLIRR t LOOP F2 dt tA tB R2 DUT 0t1 Q4 0.25 IRM t3 IRM C1R04VR Q3 -V2 R -V3 4 VRM FIGURE 1. tRR TEST CIRCUIT FIGURE 2. tRR WAVEFORMS AND DEFIN
SEMICONDUCTORRHRP8120CC April 1995 8A, 1200V Hyperfast Dual Diode Features Package • Hyperfast with Soft Recovery .tRR dIFtQt3 > 0 I RR 1
SEMICONDUCTORRHRP6120CC January 1996 6A, 1200V Hyperfast Dual Diode Features Package • Hyperfast with Soft Recovery .tRR4 LOOP Q t3 > 01 +V L1 tA(MIN)1 £ R4 10 0 dIFttLRR LOOP IF 2 dt tA tBRt21 DUT 0 Q4 0.25 IRM t3 IRM C1 R4 Q3 -V2 R -V3 4 VR VRM FIGURE 1. tRR
SEMICONDUCTORRHRG50120 April 1995 50A, 1200V Hyperfast Diode Features Package • Hyperfast with Soft Recovery .tRR Q t3 > 01 +V L1 t≤ A(MIN)1 R4 10 0 dIFtIRR t LLOOP F2 dt tA tB R2 DUT 0t1 Q4 0.25 IRM t3 IRM C1R04VR Q3 -V2 R -V3 4 VRM FIGURE 1. tRR
SEMICONDUCTORRHRG15120CC April 1995 15A, 1200V Hyperfast Dual Diode Features Package • Hyperfast with Soft Recovery .< 65ns JEDEC STYLE TO-247 • Operating Temperature ..+175oC ANODE 2 CATHODE • Reverse Voltage .1200V CATHODE ANODE 1 (BOTTOM SIDE • Avalanche Energy Rated METAL) • Planar Construction
SEMICONDUCTORRHR1Y75120CC October 1995 75A, 1200V Hyperfast Dual Diode Features Package • Hyperfast with Soft Recovery .tRR Q t3 > 01 +V L1 t≤ A(MIN)1 R4 10 0 dIFtLIRR t LOOP F2 dt tA tBRt21 DUT Q4 0.25 IRM t3 IRM C1R04VR Q3 -V2 R -V3 4 VRM FIGURE 1. tRR TEST CIRCUIT FIGURE 2. tRR WAVEFORMS AND DEFI
Order this document SEMICONDUCTOR TECHNICAL DATA by MURS320T3/D .employing state–of–the–art epitaxial construction with oxide passivation Motorola Preferred Devices and metal overlay contact. Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes, in
Order this document SEMICONDUCTOR TECHNICAL DATA by MURS120T3/D Ideally suited for high voltage, high frequency rectification, or as free Motorola Preferred Devices wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. • Small Compact
Order this document SEMICONDUCTOR TECHNICAL DATA by MURP20040CT/D POWERTAP II Package ULTRAFAST RECTIFIER Features mesa epitaxial construction with glass passivation. Ideally suited 200 AMPERES high frequency switching power supplies; free wheeling diodes and polarity protection diodes. • Stable,
Order this document SEMICONDUCTOR TECHNICAL DATA by MURP20020CT/D Motorola Preferred Devices .designed for use in switching power supplies, inverters, and as free wheeling diodes. These state–of–the–art devices have the following features: • Dual Diode Construction ULTRAFAST • Low Leakage Current R