Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MBRS240LT3/D SMB Power Surface Mount Package

Order this document SEMICONDUCTOR TECHNICAL DATA by MBRS240LT3/D SMB Power Surface Mount Package .employing the Schottky Barrier principle in a metal–to–silicon power SCHOTTKY BARRIER rectifier. Features epitaxial construction with oxide passivation and metal RECTIFIER overlay contact. Ideally suited for low voltage, high frequency switching power 2.0 AMPERES supplies; free wheeling diodes and polarity protection diodes. 40 VOLTS • Compact Package with J–Bend Leads Ideal for Automated Handling • Highly Stable Oxide Passivated Junction • Guardring for Over–Voltage Protection • Low Forward Volta...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MBRS240LT3/D SMB Power Surface Mount Package

.employing the Schottky Barrier principle in a metal–to–silicon power SCHOTTKY BARRIER rectifier. Features epitaxial construction with oxide passivation and metal RECTIFIER overlay contact. Ideally suited for low voltage, high frequency switching power 2.0 AMPERES supplies; free wheeling diodes and polarity protection diodes. 40 VOLTS • Compact Package with J–Bend Leads Ideal for Automated Handling • Highly Stable Oxide Passivated Junction • Guardring for Over–Voltage Protection • Low Forward Voltage Drop Mechanical Characteristics: • Case: Molded Epoxy • Epoxy Meets UL94, VO at 1/8″ • Weight: 95 mg (approximately) CASE 403A–03 • Polarity: Notch in Plastic Body Indicates Cathode Lead SMB • Maximum Temperature of 260°C/10 Seconds for Soldering • Available in 12 mm Tape, 2500 Units per 13″ Reel, Add “T3” Suffix to Part Number • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Marking: 2BL4 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 40 Volts Working Peak Reverse Voltage VRWM DC Blocking Voltage VR Average Rectified Forward Current (At Rated VR, TC = 100°C) IO 2.0 Amps Peak Repetitive Forward Current IFRM 4.0 Amps (At Rated VR, Square Wave, 20 kHz, TC = 105°C) Non–Repetitive Peak Surge Current IFSM 25 Amps (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) Storage / Operating Case Temperature Tstg, TC – 55 to +150 °C Operating Junction Temperature TJ – 55 to +125 °C Voltage Rate of Change (Rated VR, TJ = 25°C) dv/dt 10,000 V/s THERMAL CHARACTERISTICS Thermal Resistance — Junction–to–Lead (2) RθJL 18 °C/W Thermal Resistance — Junction–to–Ambient (3) RθJA 78 ELECTRICAL CHARACTERISTICS (1), VF TJ = 25°C TJ = 125°C VoltsMaximum Instantaneous Forward Voltage see Figure 2 (IF = 2.0 A) 0.43 0.375 (IF = 4.0 A) 0.54 0.55IT= 25°C T = 100°C mA Maximum Instantaneous Reverse Current, see Figure4RJJ(VR = 40 V) 2.0 60 (VR = 20 V) 0.50 40 This document contains information on a new product. Specifications and information herein are subject to change without notice. (1) Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2.0%. (2) Mounted with minimum recommended pad size, PC Board FR4. (3) 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. R Meoctotriofilea,r InDce. 1v9ic98e Data 1, 10 10 1.0 1.0 TJ = 125°C TJ = 125°C 25°C 85°C ° 85°C– 40 C 25°C 0.1 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage

100E–3 100E–3 100°C 10E–3 TJ = 125°C 10E–3 85°C 1.0E–3 1.0E–3 100E–6 100E–6 10E–6 10E–6 0 10 20 30 40 0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)

Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current

3.5 1.6 FREQ = 20 kHz dc 3.0 dc 1.4 SQUARE WAVE 1.2 Ipk/Io = 2.5 SQUARE WAVE 1.0 Ipk/Io = 5.0 2.0 Ipk/Io = 10 Ipk/Io = 0.8 1.5 Ipk/Io = 20Ipk/Io = 5.0 0.6 1.0 Ipk/Io = 10 0.4 Ipk/Io = 20 0.5 0.200020 40 60 80 100 120 140 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS)

Figure 5. Current Derating Figure 6. Forward Power Dissipation

2 Rectifier Device Data IO, AVERAGE FORWARD CURRENT (AMPS) IR, REVERSE CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IR, MAXIMUM REVERSE CURRENT (AMPS)PFO, AVERAGE POWER DISSIPATION (WATTS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS), 1000 1000 TJ = 25°C 1.0 10 0 5.0 10 15 20 25 30 35 40 1.0 10 100 1000 10000 VR, REVERSE VOLTAGE (VOLTS) PULSE WIDTH (µSEC)

Figure 7. Capacitance Figure 8. Maximum Non–Repetitive Forward Surge Current

1.0E+00 50% 20% 10% 1.0E–01 5.0% 2.0% 1.0E–02 1.0% 1.0E–03 Rtjl(t) = Rtjl*r(t) 1.0E–04 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 t, TIME (s)

Figure 9. Thermal Response

0.089 2.261 0.108 2.743 0.085 2.159 inches mm

SMB Rectifier Device Data 3

RT, TRANSIENT THERMAL RESISTANCE (NORMALIZED) C, CAPACITANCE (pF) SURGE CURRENT (AMPS),

PACKAGE DIMENSIONS S A NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.

D B

INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.160 0.180 4.06 4.57 B 0.130 0.150 3.30 3.81 C 0.075 0.095 1.90 2.41 D 0.077 0.083 1.96 2.11 H 0.0020 0.0060 0.051 0.152 J 0.006 0.012 0.15 0.30

C K 0.030 0.050 0.76 1.27

P 0.020 REF 0.51 REF S 0.205 0.220 5.21 5.59

K P J H CASE 403A–03 ISSUE C

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 Mfax: email is hidden – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET: http://motorola.com/sps 4 ◊ RectifieMr DBeRvSi2c4e0 DLTa3ta/D]
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SEMICONDUCTORRHRU50120 April 1995 50A, 1200V Hyperfast Diode Features Package • Hyperfast with Soft Recovery .tRR Q t3 > 01 +V L1 t≤ A(MIN)1 R4 10 0 dIFtLIRR t LOOP F dt 2 tA tBRt21 DUT Q4 0.25 IRM t3 IRM C1R04VR Q3 -V2 R -V3 4 VRM FIGURE 1. tRR TEST CIRCUIT
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SEMICONDUCTORRHRU150120 September 1995 150A, 1200V Hyperfast Diode Features Package • Hyperfast with Soft Recovery .tRR Q t3 > 01 +V L1 t≤ A(MIN)1 R4 10 0 dIFtLIRR t LOOP F2 dt tA tB R2 DUT 0t1 Q4 0.25 IRM t3 IRM C1R04VR Q3 -V2 R -V3 4 VRM FIGURE 1. tRR TEST CIRCUIT FIGURE 2. tRR WAVEFORMS AND DEFIN
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SEMICONDUCTORRHRP8120CC April 1995 8A, 1200V Hyperfast Dual Diode Features Package • Hyperfast with Soft Recovery .tRR dIFtQt3 > 0 I RR 1
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SEMICONDUCTORRHRP6120CC January 1996 6A, 1200V Hyperfast Dual Diode Features Package • Hyperfast with Soft Recovery .tRR4 LOOP Q t3 > 01 +V L1 tA(MIN)1 £ R4 10 0 dIFttLRR LOOP IF 2 dt tA tBRt21 DUT 0 Q4 0.25 IRM t3 IRM C1 R4 Q3 -V2 R -V3 4 VR VRM FIGURE 1. tRR
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SEMICONDUCTORRHRG50120 April 1995 50A, 1200V Hyperfast Diode Features Package • Hyperfast with Soft Recovery .tRR Q t3 > 01 +V L1 t≤ A(MIN)1 R4 10 0 dIFtIRR t LLOOP F2 dt tA tB R2 DUT 0t1 Q4 0.25 IRM t3 IRM C1R04VR Q3 -V2 R -V3 4 VRM FIGURE 1. tRR
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SEMICONDUCTORRHRG15120CC April 1995 15A, 1200V Hyperfast Dual Diode Features Package • Hyperfast with Soft Recovery .< 65ns JEDEC STYLE TO-247 • Operating Temperature ..+175oC ANODE 2 CATHODE • Reverse Voltage .1200V CATHODE ANODE 1 (BOTTOM SIDE • Avalanche Energy Rated METAL) • Planar Construction
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