Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MBRS240LT3/D SMB Power Surface Mount Package
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRS240LT3/D SMB Power Surface Mount Package .employing the Schottky Barrier principle in a metal–to–silicon power SCHOTTKY BARRIER rectifier. Features epitaxial construction with oxide passivation and metal RECTIFIER overlay contact. Ideally suited for low voltage, high frequency switching power 2.0 AMPERES supplies; free wheeling diodes and polarity protection diodes. 40 VOLTS • Compact Package with J–Bend Leads Ideal for Automated Handling • Highly Stable Oxide Passivated Junction • Guardring for Over–Voltage Protection • Low Forward Volta...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MBRS240LT3/D SMB Power Surface Mount Package
.employing the Schottky Barrier principle in a metal–to–silicon power SCHOTTKY BARRIER rectifier. Features epitaxial construction with oxide passivation and metal RECTIFIER overlay contact. Ideally suited for low voltage, high frequency switching power 2.0 AMPERES supplies; free wheeling diodes and polarity protection diodes. 40 VOLTS • Compact Package with J–Bend Leads Ideal for Automated Handling • Highly Stable Oxide Passivated Junction • Guardring for Over–Voltage Protection • Low Forward Voltage Drop Mechanical Characteristics: • Case: Molded Epoxy • Epoxy Meets UL94, VO at 1/8″ • Weight: 95 mg (approximately) CASE 403A–03 • Polarity: Notch in Plastic Body Indicates Cathode Lead SMB • Maximum Temperature of 260°C/10 Seconds for Soldering • Available in 12 mm Tape, 2500 Units per 13″ Reel, Add “T3” Suffix to Part Number • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Marking: 2BL4 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 40 Volts Working Peak Reverse Voltage VRWM DC Blocking Voltage VR Average Rectified Forward Current (At Rated VR, TC = 100°C) IO 2.0 Amps Peak Repetitive Forward Current IFRM 4.0 Amps (At Rated VR, Square Wave, 20 kHz, TC = 105°C) Non–Repetitive Peak Surge Current IFSM 25 Amps (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) Storage / Operating Case Temperature Tstg, TC – 55 to +150 °C Operating Junction Temperature TJ – 55 to +125 °C Voltage Rate of Change (Rated VR, TJ = 25°C) dv/dt 10,000 V/s THERMAL CHARACTERISTICS Thermal Resistance — Junction–to–Lead (2) RθJL 18 °C/W Thermal Resistance — Junction–to–Ambient (3) RθJA 78 ELECTRICAL CHARACTERISTICS (1), VF TJ = 25°C TJ = 125°C VoltsMaximum Instantaneous Forward Voltage see Figure 2 (IF = 2.0 A) 0.43 0.375 (IF = 4.0 A) 0.54 0.55IT= 25°C T = 100°C mA Maximum Instantaneous Reverse Current, see Figure4RJJ(VR = 40 V) 2.0 60 (VR = 20 V) 0.50 40 This document contains information on a new product. Specifications and information herein are subject to change without notice. (1) Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2.0%. (2) Mounted with minimum recommended pad size, PC Board FR4. (3) 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. R Meoctotriofilea,r InDce. 1v9ic98e Data 1, 10 10 1.0 1.0 TJ = 125°C TJ = 125°C 25°C 85°C ° 85°C– 40 C 25°C 0.1 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
100E–3 100E–3 100°C 10E–3 TJ = 125°C 10E–3 85°C 1.0E–3 1.0E–3 100E–6 100E–6 10E–6 10E–6 0 10 20 30 40 0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
3.5 1.6 FREQ = 20 kHz dc 3.0 dc 1.4 SQUARE WAVE 1.2 Ipk/Io = 2.5 SQUARE WAVE 1.0 Ipk/Io = 5.0 2.0 Ipk/Io = 10 Ipk/Io = 0.8 1.5 Ipk/Io = 20Ipk/Io = 5.0 0.6 1.0 Ipk/Io = 10 0.4 Ipk/Io = 20 0.5 0.200020 40 60 80 100 120 140 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS)Figure 5. Current Derating Figure 6. Forward Power Dissipation
2 Rectifier Device Data IO, AVERAGE FORWARD CURRENT (AMPS) IR, REVERSE CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IR, MAXIMUM REVERSE CURRENT (AMPS)PFO, AVERAGE POWER DISSIPATION (WATTS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS), 1000 1000 TJ = 25°C 1.0 10 0 5.0 10 15 20 25 30 35 40 1.0 10 100 1000 10000 VR, REVERSE VOLTAGE (VOLTS) PULSE WIDTH (µSEC)Figure 7. Capacitance Figure 8. Maximum Non–Repetitive Forward Surge Current
1.0E+00 50% 20% 10% 1.0E–01 5.0% 2.0% 1.0E–02 1.0% 1.0E–03 Rtjl(t) = Rtjl*r(t) 1.0E–04 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 t, TIME (s)Figure 9. Thermal Response
0.089 2.261 0.108 2.743 0.085 2.159 inches mmSMB Rectifier Device Data 3
RT, TRANSIENT THERMAL RESISTANCE (NORMALIZED) C, CAPACITANCE (pF) SURGE CURRENT (AMPS),PACKAGE DIMENSIONS S A NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.D B
INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.160 0.180 4.06 4.57 B 0.130 0.150 3.30 3.81 C 0.075 0.095 1.90 2.41 D 0.077 0.083 1.96 2.11 H 0.0020 0.0060 0.051 0.152 J 0.006 0.012 0.15 0.30C K 0.030 0.050 0.76 1.27
P 0.020 REF 0.51 REF S 0.205 0.220 5.21 5.59K P J H CASE 403A–03 ISSUE C
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