Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MBRP20060CT/D POWERTAP II Package SCHOTTKY BARRIERRECTIFIER

Order this document SEMICONDUCTOR TECHNICAL DATA by MBRP20060CT/D POWERTAP II Package SCHOTTKY BARRIERRECTIFIER .employing the Schottky Barrier principle in a large area metal–to–silicon 200 AMPERES power diode. State of the art geometry features epitaxial construction with oxide 60 VOLTS passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes. • Guardring for Stress Protection • Matched dual die construction – May be Paralleled for High Current Output • High dv/dt Capability • Very Low...
Author: เดชเพียร Shared: 8/19/19
Downloads: 11 Views: 109

Content

Order this document SEMICONDUCTOR TECHNICAL DATA by MBRP20060CT/D POWERTAP II Package SCHOTTKY BARRIERRECTIFIER

.employing the Schottky Barrier principle in a large area metal–to–silicon 200 AMPERES power diode. State of the art geometry features epitaxial construction with oxide 60 VOLTS passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes. • Guardring for Stress Protection • Matched dual die construction – May be Paralleled for High Current Output • High dv/dt Capability • Very Low Forward Voltage Drop13Mechanical Characteristics: 2 • Case: Epoxy, Molded with Metal Heatsink Base CASE 357C-03 • Weight: 80 grams (approximately) POWERTAP II • Finish: All External Surfaces Corrosion Resistant • Base Plate Torques: See procedure given in the Package Outline Section • Top Terminal Torque: 70 in– lb max. • Shipped 25 units per foam • Marking: MBRP20060CT MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 60 Volts Working Peak Reverse Voltage VRWM DC Blocking Voltage VR Average Rectified Forward Current Per Leg IO 100 Amps (At Rated VR, TC = 120°C) Per Package 200 Peak Repetitive Forward Current Per Leg IFRM 200 Amps (At Rated VR, Square Wave, 20 kHz, TC = 125°C) Non-Repetitive Peak Surge Current Per Package IFSM 1500 Amps (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) Storage/Operating Case Temperature Tstg, TC –55 to +150 °C Operating Junction Temperature TJ –55 to +150 °C Voltage Rate of Change (Rated VR, TJ = 25°C) dv/dt 1,000 V/µs THERMAL CHARACTERISTICS Thermal Resistance — Junction–to–Case Per Leg Rtjc 0.44 °C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (1), see Figure 2 Per Leg VF TJ = 25°C TJ = 100°C Volts (IF = 100 Amps) 0.80 0.72 (IF = 200 Amps) 0.92 0.82 Maximum Instantaneous Reverse Current, see Figure 4 Per Leg IR TJ = 25°C TJ = 100°C mA (VR = 60 V) 0.5 100 (VR = 30 V) 0.2 50 (1) Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2%. POWERTAP and SWITCHMODE are trademarks of Motorola, Inc. This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. MMoottoororloal,a In Sc. c1h99o5ttky Power Rectifier Data 1, 1000 1000 100 100 TJ = 150°C TJ = 150°C 10 10 25°C 25°C 100°C 100°C 1.0 1.0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage

1.0 1.0 TJ = 150°C 0.01 100°C 100°C 0.01 0.0001 0.00001 ° 0.000125 C 25°C 0.000001 0.00001 0 10 20 30 40 50 60 0 10 20 30 40 50 60 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)

Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current

160 120 dc FREQ = 20 kHz dc SQUARE SQUARE 120 WAVE WAVE Ipk/Io = Ipk/Io = 80 60 Ipk/Io = 5Ipk/Io = 5 Ipk/Io = 10 Ipk/Io = 10 40 Ipk/Io = 20 Ipk/Io = 20 20 TJ = 150°C00020 40 60 80 100 120 140 160 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS)

Figure 5. Current Derating Figure 6. Forward Power Dissipation

(PER LEG) (PER LEG) 2 Motorola Schottky Power Rectifier Data IO , AVERAGE FORWARD CURRENT (AMPS) IR , REVERSE CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IR , MAXIMUM REVERSE CURRENT (AMPS)P , AVERAGE POWER DISSIPATION (WATTS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS)FO, 10,000 TJ = 25°C 1,000 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Capacitance

1.0 0.01 Rtjc(t) = Rtjc*r(t) 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 T, TIME (s)

Figure 8. Thermal Response

VCC + 150 V, 12 Vdc 10 mAdc 100 2 k12 V 2N2222 D.U.T. 2s1kHz CURRENT 2N6277 + AMPLITUDE 1004FADJUST CARBON 1 CARBON 0 –10 AMPS 1N5817

Figure 9. Test Circuit for Repetitive Reverse Current Motorola Schottky Power Rectifier Data 3

R(T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) C, CAPACITANCE (pF), MAXIMUM MECHANICAL RATINGS POWERTAP MECHANICAL DATA APPLIES OVER OPERATING TEMPERATURE Terminal Penetration: 0.235 max Terminal Torque: 70 in-lb max 2″ Mounting Torque — Outside Holes: 70 in-lb max Mounting Torque — Vertical Pull 2 in. Lever Pull Center Hole: 8–10 in-lb max 250 lbs. max 50 lbs. max Seating Plane 1 mil per in. Flatness (between mounting holes) Note: While the POWERTAP is capable of sustaining these vertical and levered tensions, the intimate contact Note: between POWERTAP and heat sink may be lost. This could lead to thermal runaway. The use of very Note: flexible leads is recommended for the anode connections. Use of thermal grease is highly recommended.

MOUNTING PROCEDURE

The POWERTAP package requires special mounting considerations because of the long longitudinal axis of the copper heat sink. It is important to follow the proper tightening sequence to avoid warping the heat sink, which can reduce thermal contact between the POWERTAP and heat sink. 2–3 TURNS 2–3 TURNS 2–3 TURNS STEP 1: Locate the POWERTAP on the heat sink and start mounting bolts into the threads by hand POWER TAP (2 or 3 turns).

HEAT SINK

2–3 TURNS FINGER-TIGHT 2–3 TURNS STEP 2: Finger tighten the center bolt. The bolt may catch on the threads of the heat sink so it is im- POWER TAP portant to make sure the face of the bolt or washer is in contact with the surface of the HEAT SINK POWERTAP. 5–10 IN-LB FINGER-TIGHT 5–10 IN-LB STEP 3: Tighten each of the end bolts between 5 to 10 in-lb. POWER TAP

HEAT SINK

5–10 IN-LB 8–10 IN-LB 5–10 IN-LB STEP 4: Tighten the center bolt between 8 to 10 in-lb. POWER TAP

HEAT SINK

70 IN-LB 8–10 IN-LB 70 IN-LB STEP 5: Finally, tighten the end bolts to 70 in-lb. POWER TAP

HEAT SINK

4 Motorola Schottky Power Rectifier Data,

PACKAGE DIMENSIONS

NOTES: -A- W 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

R 0.25 (0.010) MTAMBM2. CONTROLLING DIMENSION: INCH.

3. TERMINAL PENETRATION: 5.97 (0.235) MAXIMUM.

G N INCHES MILLIMETERS

DIM MIN MAX MIN MAX -B- A 3.450 3.635 87.63 92.33 B 0.700 0.810 17.78 20.57

Q 2 PL C 0.615 0.640 15.53 16.26

E 0.120 0.130 3.05 3.30

H F 0.25 (0.010) MTAMBMF0.435 0.445 11.05 11.30

G 1.370 1.380 34.80 35.05 H 0.007 0.030 0.18 0.76 N 1/4–20UNC 2B 1/4–20UNC 2B SEATING Q 0.270 0.285 6.86 7.32

C -T- PLANE R 31.50 BSC 80.01 BSC E U 0.600 0.630 15.24 16.00 UVV0.330 0.375 8.39 9.52

W 0.170 0.190 4.32 4.82

CASE 357C–03 ISSUE C Motorola Schottky Power Rectifier Data 5

, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: email is hidden – TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 6 ◊ Motorola Schottky PoweMr BRRePc2ti0fi0e6r 0DCaTt/aD]
15

Similar documents

Order this document
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRP20045CT/D Motorola Preferred Devices .using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Dual Diode Construction — May Be Paralleled for Higher Current Output SCHOT
Order this document  POWERTAP III Package
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRP20035L/D POWERTAP III Package .employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation SCHOTTKY BARRIER and metal overlay contact.
Order this document
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRP20030CTL/D Motorola Preferred Device The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state–of–the–art device has the following LOW V features: FSCHOTTKY BARRIER • Dual Diode Constructio
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRM140T3/D POWERMITE Power Surface Mount Package
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRM140T3/D POWERMITE Power Surface Mount Package SCHOTTKY BARRIER The Schottky Powermite employs the Schottky Barrier principle with a barrier metal RECTIFIER and epitaxial construction that produces optimal forward voltage drop–reverse current 1.
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRM120LT3/D POWERMITE Power Surface Mount Package
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRM120LT3/D POWERMITE Power Surface Mount Package SCHOTTKY BARRIER The Schottky Powermite employs the Schottky Barrier principle with a barrier metal RECTIFIER and epitaxial construction that produces optimal forward voltage drop–reverse current 1
Features Package Applications Description Symbol
SEMICONDUCTORRHRU50120 April 1995 50A, 1200V Hyperfast Diode Features Package • Hyperfast with Soft Recovery .tRR Q t3 > 01 +V L1 t≤ A(MIN)1 R4 10 0 dIFtLIRR t LOOP F dt 2 tA tBRt21 DUT Q4 0.25 IRM t3 IRM C1R04VR Q3 -V2 R -V3 4 VRM FIGURE 1. tRR TEST CIRCUIT
Features Package Applications
SEMICONDUCTORRHRU150120 September 1995 150A, 1200V Hyperfast Diode Features Package • Hyperfast with Soft Recovery .tRR Q t3 > 01 +V L1 t≤ A(MIN)1 R4 10 0 dIFtLIRR t LOOP F2 dt tA tB R2 DUT 0t1 Q4 0.25 IRM t3 IRM C1R04VR Q3 -V2 R -V3 4 VRM FIGURE 1. tRR TEST CIRCUIT FIGURE 2. tRR WAVEFORMS AND DEFIN
Features Package Applications
SEMICONDUCTORRHRP8120CC April 1995 8A, 1200V Hyperfast Dual Diode Features Package • Hyperfast with Soft Recovery .tRR dIFtQt3 > 0 I RR 1
Features Package Applications Description K
SEMICONDUCTORRHRP6120CC January 1996 6A, 1200V Hyperfast Dual Diode Features Package • Hyperfast with Soft Recovery .tRR4 LOOP Q t3 > 01 +V L1 tA(MIN)1 £ R4 10 0 dIFttLRR LOOP IF 2 dt tA tBRt21 DUT 0 Q4 0.25 IRM t3 IRM C1 R4 Q3 -V2 R -V3 4 VR VRM FIGURE 1. tRR
Features Package Applications
SEMICONDUCTORRHRG50120 April 1995 50A, 1200V Hyperfast Diode Features Package • Hyperfast with Soft Recovery .tRR Q t3 > 01 +V L1 t≤ A(MIN)1 R4 10 0 dIFtIRR t LLOOP F2 dt tA tB R2 DUT 0t1 Q4 0.25 IRM t3 IRM C1R04VR Q3 -V2 R -V3 4 VRM FIGURE 1. tRR
Features Package Applications Description
SEMICONDUCTORRHRG15120CC April 1995 15A, 1200V Hyperfast Dual Diode Features Package • Hyperfast with Soft Recovery .< 65ns JEDEC STYLE TO-247 • Operating Temperature ..+175oC ANODE 2 CATHODE • Reverse Voltage .1200V CATHODE ANODE 1 (BOTTOM SIDE • Avalanche Energy Rated METAL) • Planar Construction
Features Package Applications Description Symbol
SEMICONDUCTORRHR1Y75120CC October 1995 75A, 1200V Hyperfast Dual Diode Features Package • Hyperfast with Soft Recovery .tRR Q t3 > 01 +V L1 t≤ A(MIN)1 R4 10 0 dIFtLIRR t LOOP F2 dt tA tBRt21 DUT Q4 0.25 IRM t3 IRM C1R04VR Q3 -V2 R -V3 4 VRM FIGURE 1. tRR TEST CIRCUIT FIGURE 2. tRR WAVEFORMS AND DEFI
Order this document SEMICONDUCTOR TECHNICAL DATA by MURS320T3/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MURS320T3/D .employing state–of–the–art epitaxial construction with oxide passivation Motorola Preferred Devices and metal overlay contact. Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes, in
Order this document SEMICONDUCTOR TECHNICAL DATA by MURS120T3/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MURS120T3/D Ideally suited for high voltage, high frequency rectification, or as free Motorola Preferred Devices wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. • Small Compact
Order this document SEMICONDUCTOR TECHNICAL DATA by MURP20040CT/D   POWERTAP II Package ULTRAFAST
Order this document SEMICONDUCTOR TECHNICAL DATA by MURP20040CT/D POWERTAP II Package ULTRAFAST RECTIFIER Features mesa epitaxial construction with glass passivation. Ideally suited 200 AMPERES high frequency switching power supplies; free wheeling diodes and polarity protection diodes. • Stable,
Order this document
Order this document SEMICONDUCTOR TECHNICAL DATA by MURP20020CT/D Motorola Preferred Devices .designed for use in switching power supplies, inverters, and as free wheeling diodes. These state–of–the–art devices have the following features: • Dual Diode Construction ULTRAFAST • Low Leakage Current R
Order this document
Order this document SEMICONDUCTOR TECHNICAL DATA by MURHF860CT/D .designed for use in switching power supplies, inverters and as free Motorola Preferred Device wheeling diodes, these state-of-the-art devices have the following features: • Ultrafast 35 Nanosecond Recovery Times • 175°C Operating Jun
Order this document SEMICONDUCTOR TECHNICAL DATA by MURHB840CT/D   D2PAK Power Surface Mount Package Motorola Preferred Device
Order this document SEMICONDUCTOR TECHNICAL DATA by MURHB840CT/D D2PAK Power Surface Mount Package Motorola Preferred Device Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Package Designed for Power
Order this document SEMICONDUCTOR TECHNICAL DATA by MURH860CT/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MURH860CT/D .designed for use in switching power supplies, inverters and as free Motorola Preferred Device wheeling diodes, these state-of-the-art devices have the following features: • Ultrafast 35 Nanosecond Recovery Times • 175°C Operating Jun
Order this document SEMICONDUCTOR TECHNICAL DATA by MURH840CT/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MURH840CT/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: Motorola Preferred Device • Ultrafast 28 Nanosecond Recovery Time • 175°C Operating Junct
Order this document SEMICONDUCTOR TECHNICAL DATA by MURH8100E/D  Plastic TO–220 Package
Order this document SEMICONDUCTOR TECHNICAL DATA by MURH8100E/D Plastic TO–220 Package ULTRAFAST RECTIFIER Features mesa epitaxial construction with glass passivation. Ideally suited high 8.0 AMPERES frequency switching power supplies; free wheeling diodes; polarity protection diodes; 1000 VOLTS an
Order this document SEMICONDUCTOR TECHNICAL DATA by MURF820/D  Motorola Preferred Device
Order this document SEMICONDUCTOR TECHNICAL DATA by MURF820/D Motorola Preferred Device Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 ns Recovery Times ULTRAFAST RECTIFIER • 150°C Opera
Order this document SEMICONDUCTOR TECHNICAL DATA by MURF1660CT/D  Motorola Preferred Device
Order this document SEMICONDUCTOR TECHNICAL DATA by MURF1660CT/D Motorola Preferred Device Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 60 Nanosecond Recovery Times ULTRAFAST RECTIFIER •
Order this document SEMICONDUCTOR TECHNICAL DATA by MURF1620CT/D  Motorola Preferred Device
Order this document SEMICONDUCTOR TECHNICAL DATA by MURF1620CT/D Motorola Preferred Device Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 Nanosecond Recovery Times ULTRAFAST RECTIFIER •
Order this document SEMICONDUCTOR TECHNICAL DATA by MURD620CT/D  DPAK Surface Mount Package
Order this document SEMICONDUCTOR TECHNICAL DATA by MURD620CT/D DPAK Surface Mount Package .designed for use in switching power supplies, inverters and as MURD620CT is a free wheeling diodes, these state–of–the–art devices have the Motorola Preferred Device following features: • Ultrafast 35 Nanose
Order this document SEMICONDUCTOR TECHNICAL DATA by MURD320/D  DPAK Surface Mount Package
Order this document SEMICONDUCTOR TECHNICAL DATA by MURD320/D DPAK Surface Mount Package .designed for use in switching power supplies, inverters and as MURD320 is a free wheeling diodes, these state–of–the–art devices have the Motorola Preferred Device following features: • Ultrafast 35 Nanosecond
Order this document SEMICONDUCTOR TECHNICAL DATA by MURB1660CT/D   D2PAK Power Surface Mount Package Motorola Preferred Device
Order this document SEMICONDUCTOR TECHNICAL DATA by MURB1660CT/D D2PAK Power Surface Mount Package Motorola Preferred Device Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Package Designed for Power
Order this document SEMICONDUCTOR TECHNICAL DATA by MURB1620CT/D   D2PAK Power Surface Mount Package Motorola Preferred Device
Order this document SEMICONDUCTOR TECHNICAL DATA by MURB1620CT/D D2PAK Power Surface Mount Package Motorola Preferred Device Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Package Designed for Power
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR820/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR820/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Time Motorola Preferred Devices • 175°C Operat
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR620CT/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR620CT/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 Nanosecond Recovery Time Motorola Preferred Device • 175°C Operating Juncti