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Order this document SEMICONDUCTOR TECHNICAL DATA by MBRP20045CT/D Motorola Preferred Devices .using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Dual Diode Construction — May Be Paralleled for Higher Current Output SCHOTTKY BARRIER • Guardring for Stress Protection RECTIFIERS • Low Forward Voltage 200 AMPERES • 175°C Operating Junction Temperature 45 to 60 VOLTS • Guaranteed Reverse Avalanche Mechanical Characteristics: • Case: Epoxy, Molded with metal heatsink base 2 • Weight: 80 grams (approximately) • Finish: Al...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MBRP20045CT/D

Motorola Preferred Devices .using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Dual Diode Construction — May Be Paralleled for Higher Current Output SCHOTTKY BARRIER • Guardring for Stress Protection RECTIFIERS • Low Forward Voltage 200 AMPERES • 175°C Operating Junction Temperature 45 to 60 VOLTS • Guaranteed Reverse Avalanche Mechanical Characteristics: • Case: Epoxy, Molded with metal heatsink base 2 • Weight: 80 grams (approximately) • Finish: All External Surfaces Corrosion Resistant 1 • Top Terminal Torque: 25–40 lb–in max • Base Plate Torques: See procedure given in the13Package Outline Section 3 • Shipped 25 units per foam 2 CASE 357C–03 • Marking: B20045T, B20060T POWERTAP II MAXIMUM RATINGS Rating Symbol MBRP20045CT MBRP20060CT Unit Peak Repetitive Reverse Voltage VRRM 45 60 Volts Working Peak Reverse Voltage VRWM DC Blocking Voltage VR Average Rectified Forward Current Per Device IF(AV) 200 200 Amps (Rated VR) TC = 140°C Per Leg 100 100 Peak Repetitive Forward Current, Per Leg IFRM 200 200 Amps (Rated VR, Square Wave, 20 kHz), TC = 140°C Non–Repetitive Peak Surge Current IFSM 1500 1500 Amps (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Peak Repetitive Reverse Current, Per Leg (2.0 µs, 1.0 kHz) See Figure 6. IRRM 2.0 2.0 Amps Operating Junction Temperature TJ 55 to +175 55 to +175 °C Storage Temperature Tstg 55 to +150 55 to +150 °C Voltage Rate of Change (Rated VR) dv/dt 10000 10000 V/µs THERMAL CHARACTERISTICS PER LEG Thermal Resistance, Junction to Case RθJC 0.6 0.6 °C/W ELECTRICAL CHARACTERISTICS PER LEG Instantaneous Forward Voltage (1) vF Volts (iF = 200 Amps, TJ = 25°C) 0.89 0.91 (iF = 200 Amps, TJ = 25°C) 0.78 0.80 Instantaneous Reverse Current (1) iR mA (Rated dc Voltage, TJ = 125°C) 50 50 (Rated dc Voltage, TJ = 25°C) 0.5 0.5 (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%. POWERTAP II and SWITCHMODE are trademarks of Motorola, Inc. This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. Preferred devices are Motorola recommended choices for future use and best overall value. Rev2RMeoctotriofilea,r InDce. 1v9ic96e Data 1,

PACKAGE DIMENSIONS

NOTES: –A– W 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

R 0.25 (0.010) MTAMBM2. CONTROLLING DIMENSION: INCH.

3. TERMINAL PENETRATION: 5.97 (0.235) MAXIMUM.

G N INCHES MILLIMETERS

DIM MIN MAX MIN MAX –B– A 3.450 3.635 87.63 92.33 B 0.700 0.810 17.78 20.57

Q 2 PL C 0.615 0.640 15.53 16.26

E 0.120 0.130 3.05 3.30

H F 0.25 (0.010) MTAMBMF0.435 0.445 11.05 11.30

G 1.370 1.380 34.80 35.05 H 0.007 0.030 0.18 0.76 N 1/4–20UNC–2B 1/4–20UNC–2B SEATING Q 0.270 0.285 6.86 7.32

C –T– PLANE R 31.50 BSC 80.01 BSC E U 0.600 0.630 15.24 16.00 UVV0.330 0.375 8.39 9.52

W 0.170 0.190 4.32 4.82

CASE 357C–03 ISSUE C

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 Mfax: email is hidden – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET: http://motorola.com/sps 2 ◊ CODELINE TO BE PLACED HERE RecMtiBfiRerP D20e0v4ic5eC TD/Data]
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PD - 91352B IRF530NS IRF530NL HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 100V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 90mΩ Fast Switching G Fully Avalanche Rated ID = 17A S Description Advanced HEXFET® Power MOSFETs from International Rectifi