Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MBRM120LT3/D POWERMITE Power Surface Mount Package

Order this document SEMICONDUCTOR TECHNICAL DATA by MBRM120LT3/D POWERMITE Power Surface Mount Package SCHOTTKY BARRIER The Schottky Powermite employs the Schottky Barrier principle with a barrier metal RECTIFIER and epitaxial construction that produces optimal forward voltage drop–reverse current 1.0 AMPERES tradeoff. The advanced packaging techniques provide for a highly efficient micro 20 VOLTS miniature, space saving surface mount Rectifier. With its unique heatsink design, the Powermite has the same thermal performance as the SMA while being 50% smaller in footprint area, and delivering o...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MBRM120LT3/D POWERMITE Power Surface Mount Package

SCHOTTKY BARRIER The Schottky Powermite employs the Schottky Barrier principle with a barrier metal RECTIFIER and epitaxial construction that produces optimal forward voltage drop–reverse current 1.0 AMPERES tradeoff. The advanced packaging techniques provide for a highly efficient micro 20 VOLTS miniature, space saving surface mount Rectifier. With its unique heatsink design, the Powermite has the same thermal performance as the SMA while being 50% smaller in footprint area, and delivering one of the lowest height profiles, < 1.1 mm in the industry. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are ac/dc and dc–dc converters, reverse battery ANODE protection, and “Oring” of multiple supply voltages and any other application where CATHODE performance and size are critical. Features: CASE 457–03 • Low Profile — Maximum Height of 1.1 mm ISSUE B • Small Footprint — Footprint Area of 8.45 mm2 • Low VF Provides Higher Efficiency and Extends Battery Life • Supplied in 12 mm Tape and Reel — 12,000 Units per Reel • Low Thermal Resistance with Direct Thermal Path of Die on Exposed Cathode Heat Sink Mechanical Characteristics: • Powermite is JEDEC Registered as D0–216AA • Case: Molded Epoxy • Epoxy Meets UL94, VO at 1/8″ • Weight: 62 mg (approximately) • Device Marking: BCD • Lead and Mounting Surface Temperature for Soldering Purposes. 260°C Maximum for 10 Seconds MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 20 V Working Peak Reverse Voltage VRWM DC Blocking Voltage VR Average Rectified Forward Current (At Rated VR, TC = 135°C) IO 1.0 A Peak Repetitive Forward Current IFRM 2.0 A (At Rated VR, Square Wave, 100 kHz, TC = 135°C) Non–Repetitive Peak Surge Current IFSM 50 A (Non–Repetitive peak surge current, halfwave, single phase, 60 Hz) Storage / Operating Case Temperature Tstg, TC –55 to 150 °C Operating Junction Temperature TJ –55 to 125 °C Voltage Rate of Change (Rated VR, TJ = 25°C) dv/dt 10,000 V/s THERMAL CHARACTERISTICS Thermal Resistance – Junction–to–Lead (Anode) (1) Rtjl 35 °C/W Thermal Resistance – Junction–to–Tab (Cathode) (1) Rtjtab 15 Thermal Resistance – Junction–to–Ambient (1) Rtja 248 (1) Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2%. This document contains information on a new product. Specifications and information herein are subject to change without notice. POWERMITE is a registered trademark of MicroSemi Corporation (Replaces MBRM5817T3/D) R Meoctotriofilea,r InDce. 1v9ic97e Data 1,

ELECTRICAL CHARACTERISTICS

Maximum Instantaneous Forward Voltage (1), See Figure 2 VF TJ = 25°C TJ = 85°C V (IF = 0.1 A) 0.34 0.26 (IF = 1.0 A) 0.45 0.415 (IF = 3.0 A) 0.65 0.67 Maximum Instantaneous Reverse Current, See Figure 4 IR TJ = 25°C TJ = 85°C mA (VR = 20 V) 0.40 25 (VR = 10 V) 0.10 18 (1) Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2%. 10 10 TJ = 150°C TJ = 85°C TJ = 150°C 1.0 1.0 TJ = 85°C TJ = 25°C TJ = –40°C TJ = 25°C 0.1 0.1 0.1 0.3 0.5 0.7 0.9 0.1 0.3 0.5 0.7 0.9 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage

100E–3 100E+0 10E+0 10E–3 1.0E+0 1.0E–3 TJ = 85°C 100E–3 TJ = 85°C 100E–6 10E–3 1.0E–3 T = 25°C 10E–6 J TJ = 25°C 100E–6 1.0E–6 10E–6 0 5.0 10 15 20 0 5.0 10 15 20 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)

Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current

2 Rectifier Device Data IR, REVERSE CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IR, MAXIMUM REVERSE CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS), 1.8 0.7 dc FREQ = 20 kHz 1.6 0.6 SQUARE Ipk/I = 1.4 o WAVEI /I = 5 dc 0.5 pk o 1.2 SQUARE WAVE Ipk/Io = 10 1.0 0.4 Ipk/Io = Ipk/Io = 20 0.8 I /I = 5 0.3pk o 0.6 Ipk/Io = 10 0.2 0.4 Ipk/Io = 20 0.1 0.20025 45 65 85 105 125 145 165 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS)

Figure 5. Current Derating Figure 6. Forward Power Dissipation

1000 150 145 Rtja = 33.72°C/W TJ = 25°C 140 51°C/W 135 69°C/W 130 83.53°C/W 96°C/W 10 115 0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 VR, REVERSE VOLTAGE (VOLTS) VR, DC REVERSE VOLTAGE (VOLTS)

Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating*

* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re- verse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ may be calculated from the equation: TJ = TJmax – r(t)(Pf + Pr) where r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax – r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. 1.0 50% 20% 0.1 10% 5.0% 0.01 2.0% 1.0% Rtjl(t) = Rtjl*r(t) 0.001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 T, TIME (s)

Figure 9. Thermal Response Junction to Lead Rectifier Device Data 3

R(T), TRANSIENT THERMAL RESISTANCE (NORMALIZED) C, CAPACITANCE (pF) IO, AVERAGE FORWARD CURRENT (AMPS) TJ, DERATED OPERATING TEMPERATURE ( ° C) PFO, AVERAGE POWER DISSIPATION (WATTS), 1.0 50% 20% 0.1 10% 5.0% 0.01 2.0% Rtjl(t) = Rtjl*r(t) 1.0% 0.001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1,000 T, TIME (s)

Figure 10. Thermal Response Junction to Ambient PACKAGE DIMENSIONS

–A– C F

J 0.08 (0.003) MTBSCS S

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI TERM. 1 Y14.5M, 1982. –B– 2. CONTROLLING DIMENSION: MILLIMETER.

K 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH,

PROTRUSIONS OR GATE BURRS. MOLD FLASH, TERM. 2 PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE.

R MILLIMETERS INCHES L DIM MIN MAX MIN MAXA 1.75 2.05 0.069 0.081

B 1.75 2.15 0.069 0.086

J C 0.85 1.15 0.033 0.045

D 0.40 0.65 0.016 0.026

HDF0.70 1.00 0.028 0.039

H –0.05 +0.10 –0.002 +0.004 –T– 0.08 (0.003) MTBSCSJ0.10 0.25 0.004 0.010 K 3.60 3.90 0.142 0.154 L 0.50 0.80 0.020 0.031 R 1.10 1.50 0.043 0.059

CASE 457–03 S 0.25 0.85 0.010 0.033 ISSUE B

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 Customer Focus Center: 1–800–521–6274 Mfax: email is hidden – TOUCHTONE 1–602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 – http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ 4 ◊ RectifieMr BDReMvi1c2e0 DLTa3ta/D R(T), TRANSIENT THERMAL RESISTANCE (NORMALIZED)]
15

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