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SEMICONDUCTORRHRU150120 September 1995 150A, 1200V Hyperfast Diode Features Package • Hyperfast with Soft Recovery .tRR Q t3 > 01 +V L1 t≤ A(MIN)1 R4 10 0 dIFtLIRR t LOOP F2 dt tA tB R2 DUT 0t1 Q4 0.25 IRM t3 IRM C1R04VR Q3 -V2 R -V3 4 VRM FIGURE 1. tRR TEST CIRCUIT FIGURE 2. tRR WAVEFORMS AND DEFINITIONS Typical Performance Curves 500 2000 1000 +175oC 100 100 10 +100oC +175oC +100oC +25oC 10 1.0 +25o...
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SEMICONDUCTORRHRU150120 September 1995 150A, 1200V Hyperfast Diode
Features Package
• Hyperfast with Soft Recovery .<100ns • Operating Temperature ..+175oC SINGLE LEAD JEDEC STYLE TO-218 • Reverse Voltage .1200VANODE
• Avalanche Energy Rated • Planar ConstructionCATHODE
(FLANGE)Applications
• Switching Power Supplier • Power Switching Circuits • General PurposeDescription Symbol
The RHRU150120 are hyperfast diodes with soft recovery characteristics (tRR < 100ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion- K implanted epitaxial planar construction. These devices are intended for use as freewheeling/clamp- ing diodes and rectifiers in a variety of switching power sup- plies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing A and electrical noise in many power switching circuits reduc- ing power loss in the switching transistors. PACKAGE AVAILABILITY PART NUMBER PACKAGE BRAND RHRU150120 TO-218 RHR150120 NOTE: When ordering, use the entire part number. Formerly developmental type TA49074.Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
RHRU150120 UNITS Peak Repetitive Reverse Voltage .VRRM 1200 V Working Peak Reverse Voltage .VRWM 1200 V DC Blocking Voltage..VR 1200 V Average Rectified Forward Current .IF(AV) 150 A TC = 37.5 oC Repetitive Peak Surge Current.IFSM 300 A (Square Wave, 20kHz) Nonrepetitive Peak Surge Current .IFSM 1500 A (Halfwave, 1 phase, 60Hz) Maximum Power Dissipation ..PD 375 W Avalanche Energy (See Figures 10 and 11).EAVL 50 mj Operating and Storage Temperature .TSTG, TJ -65 to +175 oC Copyright © Harris Corporation 1995 File Number 4049,Specifications RHRU150120 Electrical Specifications TC = +25oC, Unless Otherwise Specified
RHRU150120 LIMITS SYMBOL TEST CONDITION MIN TYP MAX UNITS VF IF = 150A, ToC= +25 C - - 3.2 V IF = 150A, ToC= +150 C - - 2.6 V IR VR = 1200V, TC = +25 oC - - 250 µA VR = 1200V, ToC= +150 C - - 3.0 mA tRR IF = 1A, dIF/dt = 200A/µs - - 100 ns IF = 150A, dIF/dt = 200A/µs - - 125 ns tA IF = 150A, dIF/dt = 200A/µs - 70 - ns tB IF = 150A, dIF/dt = 200A/µs - 40 - ns QRR IF = 150A, dIF/dt = 200A/µs - 460 - nC CJ VR = 10V, IF = 0A - 420 - pF R oθJC - - 0.4 C/WDEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%). IR = Instantaneous reverse current. tRR = Reverse recovery time (See Figure 2), summation of tA + tB. tA = Time to reach peak reverse current (See Figure 2). tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2). QRR = Reverse recovery charge. CJ = Junction Capacitance. RθJC = Thermal resistance junction to case. EAVL = Controlled Avalanche Energy (See Figures 10 and 11). pw = pulse width. D = duty cycle. V1 AMPLITUDE CONTROLS IF V2 AMPLITUDE CONTROLS dIF/dt L1 = SELF INDUCTANCE OF +V3 R4 + LLOOP R1 Q t1 ≥ 5tA(MAX)2 t2 > tRR Q t3 > 01 +V L1 t≤ A(MIN)1 R4 10 0 dIFtLIRR
t LOOP F2 dt tA tB R2 DUT 0t1 Q4 0.25 IRM t3 IRM C1R04VR Q3 -V2 R -V3 4VRM
FIGURE 1. tRR TEST CIRCUIT FIGURE 2. tRR WAVEFORMS AND DEFINITIONS,Typical Performance Curves
500 2000 1000 +175oC 100 100 10 +100oC +175oC +100oC +25oC 10 1.0 +25oC 0.1 1 0.01 0 0.5 1 1.5 2 2.5 3 3.5 0 200 400 600 800 1000 1200 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE VOLTAGE DROP VOLTAGEoT= +25oC, dI /dt = 200A/µs TC = +100 C, dIF/dt = 200A/µsC F 250 100 200 tRR 75 150 tRR 50 100tA tA tB 25 50 tB00110 50 150 1 10 50 150 IF , FORWARD CURRENT (A) IF , FORWARD CURRENT (A) FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD FIGURE 6. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT 25oC CURRENT AT 100oC TC = +175 oC, dIF/dt = 200A/µs 400 150 300 DC t 100RR SQ. WAVE 200 75 tA 50 100 tB00110 50 150 25 50 75 100 125 150 175 IF , FORWARD CURRENT (A) TC, CASE TEMPERATURE ( oC) FIGURE 7. TYPICAL tRR, tA AND tB CURVES vs FORWARD FIGURE 8. CURRENT DERATING CURVE CURRENT AT 175oC t, RECOVERY TIMES (ns) IF, FORWARD CURRENT (A) I , AVERAGE FORWARD CURRENT (A) t, RECOVERY TIMES (ns) IR, REVERSE CURRENT (µA)F(AV),Typical Performance Curves (Continued)
0 50 100 150 200 VR, REVERSE VOLTAGE (V) FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSEVOLTAGE
L = 40mH R < 0.1Ω EAVL = 1/2LI 2 [VAVL/(VAVL - VDD)] Q1 AND Q2 ARE 1000V MOSFETsL
Q R1 +VDD
130Ω 1MΩDUT
Q V2 AVL12V CURRENT IL IL 130Ω SENSEIVVDD
- 12V t0 t1 t2 t FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGEWAVEFORMS
CJ, JUNCTION CAPACITANCE (pF),Packaging
E A TO-218 A SINGLE LEAD JEDEC STYLE TO-218 PLASTIC PACKAGEØP 1 INCHES MILLIMETERSQ
H SYMBOL MIN MAX MIN MAX NOTES1 A 0.185 0.195 4.70 4.95 - D A1 0.058 0.062 1.48 1.57 -TERM. 2 b 0.433 0.443 11.00 11.25 - q c 0.018 0.022 0.46 0.55 - L D 0.800 0.820 20.32 20.82 -L12E0.615 0.625 15.63 15.87 2 TERM. 1 H1 - 0.330 - 8.38 - R L J1 0.115 0.125 2.93 3.17 4 L3 L 0.635 0.655 16.13 16.63 - o L1 - 0.130 - 3.30 -15 c L2 - 0.034 - 0.86 - b J1 L3 0.195 0.205 4.96 5.20 - ØP 0.159 0.163 4.04 4.14 - TERM 1 - ANODE Q 0.176 0.186 4.48 4.72 2 TERM 2 - CATHODE q 1.080 1.088 27.44 27.63 - R 0.078 0.082 1.99 2.08 - NOTES: 1. No current JEDEC outline for this package. 2. Tab outline optional within boundaries of dimensions E and Q. 3. Maximum radius of 0.050 inches (1.27mm) on all body edges and corners. 4. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D. 5. Controlling dimension: Inch. 6. Revision 1 dated 1-93.All Harris Semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries.Sales Office Headquarters
For general information regarding Harris Semiconductor and its products, call 1-800-4-HARRIS NORTH AMERICA EUROPE ASIA Harris Semiconductor Harris Semiconductor Harris Semiconductor PTE Ltd. P. O. Box 883, Mail Stop 53-210 Mercure Center No. 1 Tannery Road Melbourne, FL 32902 100, Rue de la Fusee Cencon 1, #09-01 TEL: 1-800-442-7747 1130 Brussels, Belgium Singapore 1334 (407) 729-4984 TEL: (32) 2.724.2111 TEL: (65) 748-4200 FAX: (407) 729-5321 FAX: (32) 2.724.22.05 FAX: (65) 748-0400SEMICONDUCTOR]15
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