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SEMICONDUCTORRHRP8120CC April 1995 8A, 1200V Hyperfast Dual Diode Features Package • Hyperfast with Soft Recovery .tRR dIFtQt3 > 0 I RR 1 ...
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SEMICONDUCTORRHRP8120CC April 1995 8A, 1200V Hyperfast Dual Diode

Features Package

• Hyperfast with Soft Recovery .<55ns JEDEC TO-220AB • Operating Temperature ..+175oC ANODE 2CATHODE ANODE 1 • Reverse Voltage .1200V • Avalanche Energy Rated • Planar Construction CATHODE (FLANGE)

Applications

• Switching Power Supplies • Power Switching Circuits • General Purpose Symbol

K Description

The RHRP8120CC (TA49096) is a hyperfast dual diode with soft recovery characteristics (tRR < 55ns). It has half the recovery time of ultrafast diodes and is silicon nitride passi- vated ion-implanted epitaxial planar construction. A1 A2 This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. PACKAGING AVAILABILITY PART NUMBER PACKAGE BRAND RHRP8120CC TO-220AB RHR8120C NOTE: When ordering, use the entire part number.

Absolute Maximum Ratings (per leg) T = +25oC C, Unless Otherwise Specified

RHRP8120CC UNITS Peak Repetitive Reverse Voltage .VRRM 1200 V Working Peak Reverse Voltage .VRWM 1200 V DC Blocking Voltage.VR 1200 V Average Rectified Forward Current ..IF(AV) 8 A (TC = +140 oC) Repetitive Peak Surge Current.IFSM 16 A (Square Wave, 20kHz) Nonrepetitive Peak Surge Current .IFSM 100 A (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation .PD 75 W Avalanche Energy (See Figures 10 and 11).EAVL 20 mj Operating and Storage Temperature .TSTG, TJ -65 to +175 oC Copyright © Harris Corporation 1995 File Number 3966.1 8-11,

Specifications RHRP8120CC Electrical Specifications (per leg) T oC = +25 C, Unless Otherwise Specified LIMITS

SYMBOL TEST CONDITION MIN TYP MAX UNITS VF IF = 8A, TC = +25 oC - - 3.2VIoF = 8A, TC = +150 C - - 2.6 V IR VR = 1200V, T = +25oCC- - 100 µA VR = 1200V, ToC= +150 C - - 500 µA tRR IF = 1A, dIF/dt = 200A/µs - - 55 ns IF = 8A, dIF/dt = 200A/µs - - 65 ns tA IF = 8A, dIF/dt = 200A/µs - 30 - ns tB IF = 8A, dIF/dt = 200A/µs - 20 - ns QRR IF = 8A, dIF/dt = 200A/µs - 165 - nC CJ VR = 10V, IF = 0A - 25 - pF R - - 2 oθJC C/W

DEFINITIONS

VF = Instantaneous forward voltage (pw = 300µs, D = 2%). IR = Instantaneous reverse current. tRR = Reverse recovery time (See Figure 2), summation of tA + tB. tA = Time to reach peak reverse current (See Figure 2). tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2). QRR = Reverse recovery charge. CJ = Junction Capacitance. RθJC = Thermal resistance junction to case. EAVL = Controlled avalanche energy. (See Figures 10 and 11). pw = pulse width. D = duty cycle. V1 AMPLITUDE CONTROLS IF V2 AMPLITUDE CONTROLS dIF/dt L1 = SELF INDUCTANCE OF +V3 R4 + LLOOP R1 Q t1 ≥ 5tA(MAX)2 t2 > tRR dIFtQt3 > 0 I

RR

1 F dt +V L1tttA(MIN) AB1≤ R4 10 t LLOOP2 0.25 IRM

R

t 2 DUT

IRM

Q4 VR t3 C1R04Q3 VRM -V2 R -V3 4 FIGURE 1. tRR TEST CIRCUIT FIGURE 2. tRR WAVEFORMS AND DEFINITIONS 8-12,

Typical Performance Curves

40 500 +175oC 10 10 +100oC +25oC 0.1 +175oC +100oC +25oC 1 0.01 0.5 0.0010123450200 400 600 800 1000 1200 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE VOLTAGE DROP VOLTAGE TC = +25 oC, dIF/dt = 200A/µs TC = +100 oC, dIF/dt = 200A/µs 60 100 t 60RR 30 tRR t 40 20 A tA tB 10 tB000.51480.5148IF, FORWARD CURRENT (A) IF, FORWARD CURRENT (A) FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD FIGURE 6. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +25oC CURRENT AT +100oC TC = +175 oC, dIF/dt = 200A/µs 10 100 8

DC

t 6RR SQ. WAVE 40 tAt220B000.5148100 115 130 145 160 175 I , FORWARD CURRENT (A) TC, CASE TEMPERATURE ( oC)

F

FIGURE 7. TYPICAL tRR, tA AND tB CURVES vs FORWARD FIGURE 8. CURRENT DERATING CURVE CURRENT AT +175oC 8-13 t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) IF, FORWARD CURRENT (A) I , AVERAGE FORWARD CURRENT (A) t, RECOVERY TIMES (ns) IR, REVERSE CURRENT (mA)F(AV),

Typical Performance Curves (Continued)

0 50 100 150 200 VR, REVERSE VOLTAGE (V) FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE IMAX = 1A L = 40mH R < 0.1Ω E 2AVL = 1/2LI [VAVL/(VAVL - VDD)] Q1 AND Q2 ARE 1000V MOSFETsLQR1 +

VDD

130Ω V 1MΩ AVL

DUT Q

12V 2 IL ILIV

CURRENT

130Ω SENSEVttttDD012- 12V FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE

WAVEFORMS

8-14 CJ, JUNCTION CAPACITANCE (pF)]
15

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