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SEMICONDUCTORRHRP6120CC January 1996 6A, 1200V Hyperfast Dual Diode Features Package • Hyperfast with Soft Recovery .tRR4 LOOP Q t3 > 01 +V L1 tA(MIN)1 £ R4 10 0 dIFttLRR LOOP IF 2 dt tA tBRt21 DUT 0 Q4 0.25 IRM t3 IRM C1 R4 Q3 -V2 R -V3 4 VR VRM FIGURE 1. tRR...
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SEMICONDUCTORRHRP6120CC January 1996 6A, 1200V Hyperfast Dual Diode

Features Package

• Hyperfast with Soft Recovery ..<55ns JEDEC TO-220AB • Operating Temperature ..+175oC ANODE 2 • Reverse Voltage ..1200V ANODE 1 • Avalanche Energy Rated • Planar Construction (FLANGE)

Applications

• Switching Power Supplies • Power Switching Circuits • General Purpose Symbol

Description K

The RHRP6120CC is a hyperfast dual diode with soft recovery characteristics (tRR < 55ns). It has half the recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode A1 A2 and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. PACKAGE AVAILABILITY PART NUMBER PACKAGE BRAND RHRP6120CC TO-220AB RHR6120C NOTE: When ordering, use the entire part number. Formerly developmental type TA49058.

Absolute Maximum Ratings (per leg) TC = +25oC, Unless Otherwise Specified

RHRP6120CC UNITS Peak Repetitive Reverse Voltage..VRRM 1200 V Working Peak Reverse Voltage .VRWM 1200 V DC Blocking Voltage..VR 1200 V Average Rectified Forward Current .IF(AV) 6 A (TC = 130 oC) Repetitive Peak Surge Current.IFSM 12 A (Square Wave, 20kHz) Nonrepetitive Peak Surge Current .IFSM 60 A (Halfwave, 1 phase, 60Hz) Maximum Power Dissipation ..PD 50 W Avalanche Energy (See Figures 10 and 11).EAVL 10 mJ Operating and Storage Temperature ..TSTG,TJ -55 to +175 oC Copyright © Harris Corporation 1996 File Number 4091,

Specifications RHRP6120CC Electrical Specifications (per leg) TC = +25oC, Unless Otherwise Specified

SYMBOL TEST CONDITION MIN TYP MAX UNITS VF IF = 6A, TC = +25 oC - - 3.2 V IF = 6A, TC = +150 oC - - 2.6 V IR VR = 1200V, TC = +25 oC - - 100 µA VR = 1200V, TC = +150 oC - - 500 µA tRR IF = 1A, dIF/dt = 200A/µs - - 55 ns IF = 6A, dIF/dt = 200A/µs - - 65 ns tA IF = 6A, dIF/dt = 200A/µs - 33 - ns tB IF = 6A, dIF/dt = 200A/µs - 22 - ns QRR IF = 6A, dIF/dt = 200A/µs - 210 - nC CJ VR = 10V, IF = 0A - 22 - pF R oθJC - - 3 C/W

DEFINITIONS

VF = Instantaneous forward voltage (pw = 300µs, D = 2%). IR = Instantaneous reverse current. tRR = Reverse recovery time (See Figure 2), summation of tA + tB. tA = Time to reach peak reverse current (See Figure 2). tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2). QRR = Reverse recovery charge. CJ = Junction Capacitance. RθJC = Thermal resistance junction to case. EAVL = Controlled Avalanche Energy (See Figures 10 and 11). pw = pulse width. D = duty cycle. V1 AMPLITUDE CONTROLS IF +V3 V2 AMPLITUDE CONTROLS dIF/dtt³5t L1 = SELF INDUCTANCE OF R1Q1A(MAX)2 R + L t2 > tRR4 LOOP Q t3 > 01 +V L1 tA(MIN)1 £ R4 10 0 dIFttL

RR

LOOP IF 2 dt tA tB

R

t 21 DUT 0 Q4 0.25 IRM t3 IRM C1 R4 Q3 -V2 R -V3 4 VR

VRM

FIGURE 1. tRR TEST CIRCUIT FIGURE 2. tRR WAVEFORMS AND DEFINITIONS,

Typical Performance Curves

30 500 +175oC +100oC +175oC +100oC +25oC 0.1 +25oC 0.5 0.01012340200 400 600 800 1000 1200 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE VOLTAGE DROP VOLTAGE TC = +25 oC, dIF/dt = 200A/msToC= +100 C, dIF/dt = 200A/ms 60 100 tRR 60 tRR tA 40 20 tA 10 tB tB000.5160.516IF, FORWARD CURRENT (A) IF, FORWARD CURRENT (A) FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD FIGURE 6. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT 25oC CURRENT AT 100oC TC = +175 oC, dIF/dt = 200A/ms 125 6

DC

75 tRR SQ. WAVE tA 2 25 tB1000.516100 115 130 145 160 175 IF , FORWARD CURRENT (A) TC, CASE TEMPERATURE ( oC) FIGURE 7. TYPICAL tRR, tA AND tB CURVES vs FORWARD FIGURE 8. CURRENT DERATING CURVE CURRENT AT 175oC t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) IF, FORWARD CURRENT (A) I , AVERAGE FORWARD CURRENT (A) IR, REVERSE CURRENT (mA)F(AV) t, RECOVERY TIMES (ns),

Typical Performance Curves (Continued)

0 50 100 150 200 VR, REVERSE VOLTAGE (V) FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs. REVERSE VOLTAGE L = 40mH R < 0.1Ω EAVL = 1/2LI 2 [VAVL/(VAVL - VDD)] Q1 AND Q2 ARE 1000V MOSFETs

L

Q R1 + 130Ω 1MΩ

DUT

Q V 12V 2

AVL

CURRENT IL IL 130Ω SENSEIV- 12V t0 t1 t2 t FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE

WAVEFORMS

CJ, JUNCTION CAPACITANCE (pF),

Packaging

A TO-220AB ØPE3LEAD JEDEC TO-220AB PLASTIC PACKAGE A1 INCHES MILLIMETERS

Q

H1 SYMBOL MIN MAX MIN MAX NOTES A 0.170 0.180 4.32 4.57 - D TERM. 4 A1 0.048 0.052 1.22 1.32 - E 45o b 0.030 0.034 0.77 0.86 3, 41 D1 b1 0.045 0.055 1.15 1.39 2, 3 L1 c 0.014 0.019 0.36 0.48 2, 3, 4b1 D 0.590 0.610 14.99 15.49 - L b D1 - 0.160 - 4.06 -c E 0.395 0.410 10.04 10.41 - 60o

E

1231- 0.030 - 0.76 - e J1 e 0.100 TYP 2.54 TYP 5 e1 e1 0.200 BSC 5.08 BSC 5 H1 0.235 0.255 5.97 6.47 - LEAD 1. ANODE 1 LEAD 2. CATHODE J1 0.100 0.110 2.54 2.79 6 LEAD 3. ANODE2L0.530 0.550 13.47 13.97 - TERM. 4. CATHODE L1 0.130 0.150 3.31 3.81 2 ØP 0.149 0.153 3.79 3.88 - Q 0.102 0.112 2.60 2.84 - NOTES: 1. These dimensions are within allowable dimensions of Rev. J of JEDEC TO-220AB outline dated 3-24-87. 2. Lead dimension and finish uncontrolled in L1. 3. Lead dimension (without solder). 4. Add typically 0.002 inches (0.05mm) for solder coating. 5. Position of lead to be measured 0.250 inches (6.35mm) from bot- tom of dimension D. 6. Position of lead to be measured 0.100 inches (2.54mm) from bot- tom of dimension D. 7. Controlling dimension: Inch. 8. Revision 1 dated 1-93.

All Harris Semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries.

Sales Office Headquarters

For general information regarding Harris Semiconductor and its products, call 1-800-4-HARRIS NORTH AMERICA EUROPE ASIA Harris Semiconductor Harris Semiconductor Harris Semiconductor PTE Ltd. P. O. Box 883, Mail Stop 53-210 Mercure Center No. 1 Tannery Road Melbourne, FL 32902 100, Rue de la Fusee Cencon 1, #09-01 TEL: 1-800-442-7747 1130 Brussels, Belgium Singapore 1334 (407) 729-4984 TEL: (32) 2.724.2111 TEL: (65) 748-4200 FAX: (407) 729-5321 FAX: (32) 2.724.22.05 FAX: (65) 748-0400SEMICONDUCTOR]
15

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