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SEMICONDUCTORRHRG50120 April 1995 50A, 1200V Hyperfast Diode Features Package • Hyperfast with Soft Recovery .tRR Q t3 > 01 +V L1 t≤ A(MIN)1 R4 10 0 dIFtIRR t LLOOP F2 dt tA tB R2 DUT 0t1 Q4 0.25 IRM t3 IRM C1R04VR Q3 -V2 R -V3 4 VRM FIGURE 1. tRR ...
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SEMICONDUCTORRHRG50120 April 1995 50A, 1200V Hyperfast Diode
Features Package
• Hyperfast with Soft Recovery .<85ns JEDEC STYLE TO-247 • Operating Temperature ..+175oCANODE
• Reverse Voltage .1200V CATHODECATHODE
• Avalanche Energy Rated (BOTTOM SIDE METAL) • Planar ConstructionApplications
• Switching Power Supplies • Power Switching Circuits • General PurposeSymbol Description K
The RHRG50120 (TA49100) are hyperfast diodes with soft recovery characteristics (tRR < 85ns). They have half the recovery time of ultrafast diodes and are silicon nitride passi- vated ion-implanted epitaxial planar construction.A
These devices are intended for use as freewheeling/clamp- ing diodes and rectifiers in a variety of switching power sup- plies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reduc- ing power loss in the switching transistors. PACKAGING AVAILABILITY PART NUMBER PACKAGE BRAND RHRG50120 TO-247 RHRG50120 NOTE: When ordering, use the entire part number.Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
RHRG50120 UNITS Peak Repetitive Reverse Voltage.VRRM 1200 V Working Peak Reverse Voltage .VRWM 1200 V DC Blocking Voltage.VR 1200 V Average Rectified Forward Current .IF(AV) 50 A (TC = 50 oC) Repetitive Peak Surge Current.IFSM 100 A (Square Wave, 20kHz) Nonrepetitive Peak Surge Current .IFSM 500 A (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation .PD 150 W Avalanche Energy (See Figures 10 and 11)..EAVL 50 mj Operating and Storage Temperature .TSTG, TJ -65 to +175 oC Copyright © Harris Corporation 1995 File Number 3947.1 7-39,Specifications RHRG50120 Electrical Specifications T = +25oC C, Unless Otherwise Specified LIMITS
SYMBOL TEST CONDITION MIN TYP MAX UNITS VF IF = 50A, TC = +25 oC - - 3.2VIoF = 50A, TC = +150 C - - 2.6 V IR VR = 1200V, T = +25oCC- - 500 µA VR = 1200V, TC = +150 oC - - 1.0 mA tRR IF = 1A, dIF/dt = 100A/µs - - 85 ns IF = 50A, dIF/dt = 100A/µs - - 100 ns tA IF = 50A, dIF/dt = 100A/µs - 50 - ns tB IF = 50A, dIF/dt = 100A/µs - 40 - ns QRR IF = 50A, dIF/dt = 100A/µs - 240 - nC CJ VR = 10V, IF = 0A - 150 - pF R oθJC - - 1.0 C/WDEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%). IR = Instantaneous reverse current. tRR = Reverse recovery time (See Figure 2), summation of tA + tB. tA = Time to reach peak reverse current (See Figure 2). tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2). QRR = Reverse recovery charge. CJ = Junction Capacitance. RθJC = Thermal resistance junction to case. EAVL = Controlled avalanche energy. (See Figures 10 and 11). pw = pulse width. D = duty cycle. V1 AMPLITUDE CONTROLS IF V2 AMPLITUDE CONTROLS dIF/dt L1 = SELF INDUCTANCE OF +V3 R4 + LLOOP R1 Q t1 ≥ 5tA(MAX)2 t2 > tRR Q t3 > 01 +V L1 t≤ A(MIN)1 R4 10 0 dIFtIRR t LLOOP F2 dt tA tB R2 DUT 0t1 Q4 0.25 IRM t3 IRM C1R04VR Q3 -V2 R -V3 4VRM
FIGURE 1. tRR TEST CIRCUIT FIGURE 2. tRR WAVEFORMS AND DEFINITIONS 7-40,Typical Performance Curves
300 3000 +175oC +100oC 100 +100oC +175oC +25oC 10 +25oC 1 0.10123450200 400 600 800 1000 1200 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE VOLTAGE VOLTAGE DROP TC = +25 oC TC = +100 oC 100 250 80 t 200RR tRR 60 150 tA tA 40 100 tB tB 20 5000110 50 1 10 50 IF, FORWARD CURRENT (A) IF, FORWARD CURRENT (A) FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD FIGURE 6. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +25oC CURRENT AT +100oC TC = +175 oC 400 50DC
tRR 30 SQ. WAVE tA 20 100 tB 1 10 50 25 50 75 100 125 150 175 IF, FORWARD CURRENT (A) TC, CASE TEMPERATURE ( oC) FIGURE 7. TYPICAL tRR, tA AND tB CURVES vs FORWARD FIGURE 8. CURRENT DERATING CURVE CURRENT AT +175oC 7-41 t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) IF, FORWARD CURRENT (A) t, RECOVERY TIMES (ns) IR, REVERSE CURRENT (µA)IF(AV), AVERAGE FORWARD CURRENT (A),Typical Performance Curves (Continued)
0 50 100 150 200 VR, REVERSE VOLTAGE (V) FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGETest Circuit and Waveforms
IMAX = 1A L = 40mH R < 0.1Ω EAVL = 1/2LI 2 [VAVL/(VAVL - VDD)] Q1 AND Q2 ARE 1000V MOSFETsLQR1 +VDD
130Ω 1MΩDUT
Q VAVL 12V 2 CURRENT IL IL 130Ω SENSEIVVDD
- 12V t0 t1 t2 t FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGEWAVEFORMS
7-42 CJ, JUNCTION CAPACITANCE (pF)]15
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