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SEMICONDUCTORRHRG15120CC April 1995 15A, 1200V Hyperfast Dual Diode Features Package • Hyperfast with Soft Recovery .< 65ns JEDEC STYLE TO-247 • Operating Temperature ..+175oC ANODE 2 CATHODE • Reverse Voltage .1200V CATHODE ANODE 1 (BOTTOM SIDE • Avalanche Energy Rated METAL) • Planar Construction Applications • Switching Power Supplies • Power Switching Circuits Symbol • General Purpose K Description The RHRG15120CC (TA49098) are hyperfast dual diodes with soft recovery characteristics (tRR < 65ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-i...
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SEMICONDUCTORRHRG15120CC April 1995 15A, 1200V Hyperfast Dual Diode
Features Package
• Hyperfast with Soft Recovery .< 65ns JEDEC STYLE TO-247 • Operating Temperature ..+175oC ANODE 2CATHODE
• Reverse Voltage .1200V CATHODE ANODE 1 (BOTTOM SIDE • Avalanche Energy Rated METAL) • Planar ConstructionApplications
• Switching Power Supplies • Power Switching Circuits Symbol • General Purpose KDescription
The RHRG15120CC (TA49098) are hyperfast dual diodes with soft recovery characteristics (tRR < 65ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construc- A1 A2 tion. These devices are intended for use as freewheeling/clamp- ing diodes and rectifiers in a variety of switching power sup- plies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reduc- ing power loss in the switching transistors. PACKAGING AVAILABILITY PART NUMBER PACKAGE BRAND RHRG15120CC TO-247 RHR15120C NOTE: When ordering, use the entire part number.Absolute Maximum Ratings (Per Leg) T oC = +25 C, Unless Otherwise Specified
RHRG15120CC UNITS Peak Repetitive Reverse Voltage .VRRM 1200 V Working Peak Reverse Voltage .VRWM 1200 V DC Blocking Voltage..VR 1200 V Average Rectified Forward Current .IF(AV) 15 A (TC = 130 oC) Repetitive Peak Surge Current.IFSM 30 A (Square Wave, 20kHz) Nonrepetitive Peak Surge Current .IFSM 200 A (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation ..PD 100 W Avalanche Energy (L = 40mH) .EAVL 20 mj Operating and Storage Temperature .TSTG, TJ -65 to +175 oC Copyright © Harris Corporation 1995 File Number 3686.1 8-23,Specifications RHRG15120CC Electrical Specifications (Per Leg) TC = +25oC, Unless Otherwise Specified
RHRG15120CC LIMITS SYMBOL TEST CONDITION MIN TYP MAX UNITS VF IF = 15A, TC = +25 oC - - 3.2 V IF = 15A, ToC= +150 C - - 2.6 V IR VR = 1200V, TC = +25 oC - - 100 µA V oR = 1200V, TC = +150 C - - 500 µA tRR IF = 1A, dIF/dt = 100A/µs - - 65 ns IF = 15A, dIF/dt = 100A/µs - - 75 ns tA IF = 15A, dIF/dt = 100A/µs - 36 - ns tB IF = 15A, dIF/dt = 100A/µs - 28 - ns QRR IF = 15A, dIF/dt = 100A/µs - 150 - nC CJ VR = 10V, IF = 0A - 55 - pF RθJC - - 1.5 oC/WDEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%). IR = Instantaneous reverse current. tRR = Reverse recovery time (See Figure 2), summation of tA + tB. tA = Time to reach peak reverse current (See Figure 2). tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2). RθJC = Thermal resistance junction to case. EAVL = Controlled avalanche energy. (See Figures 10 and 11). pw = pulse width. D = duty cycle. V1 AMPLITUDE CONTROLS IF +V3 V2 AMPLITUDE CONTROLS dIF/dt t ≥ 5t L1 = SELF INDUCTANCE OF R1Q1A(MAX)2 R4 + L t2 > tRRLOOP
Q t3 > 01 +V L1 t≤ A(MIN)1 R4 10 0 dIF tRR t LLOOP IF2 dt tA tBR
t 21 DUT 0 Q4 0.25 IRM t3 IRM C1 R4 Q3 -V2 R -V3 4 VRVRM
FIGURE 1. tRR TEST CIRCUIT FIGURE 2. tRR WAVEFORMS AND DEFINITIONS 8-24,Typical Performance Curves
100 1000 +175oC o +175oC +100oC +25oC +100 C10 0.1 +25oC 0.5 0.010123450200 400 600 800 1000 1200 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE VOLTAGE DROP VOLTAGE TC = +25 oC TC = +100 oC 75 150 tRR 100 t 45 RR t 30 A tA tB 15 tB000.51510 15 0.51510 15 IF, FORWARD CURRENT (A) IF, FORWARD CURRENT (A) FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD FIGURE 6. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +25oC CURRENT AT +100oC TC = +175 oC 200 15DC
SQ. WAVE tRR tA 50 tB 0.5 10 01 5 15 100 115 130 145 160 175 IF, FORWARD CURRENT (A) TC, CASE TEMPERATURE ( oC) FIGURE 7. TYPICAL tRR, tA AND tB CURVES vs FORWARD FIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES CURRENT AT +175oC 8-25 t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) IF, FORWARD CURRENT (A) I I , REVERSE CURRENT (µA)F(AV), AVERAGE FORWARD CURRENT (A) t, RECOVERY TIMES (ns) R,Typical Performance Curves (Continued)
0 50 100 150 200 VR, REVERSE VOLTAGE (V) FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGETest Circuit and Waveforms
IMAX = 1A L = 40mH R < 0.1Ω EAVL = 1/2LI 2 [VAVL/(VAVL - VDD)] R Q1 and Q2 ARE 1000V MOSFETS Q1 L + 130Ω 1MΩ VAVLDUT VDD
12V Q2IL
CURRENT - I V 130Ω SENSE t0 t1 t2 t 12V FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGEWAVEFORMS
8-26 CJ, JUNCTION CAPACITANCE (pF)]15
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