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SEMICONDUCTORRHR1Y75120CC October 1995 75A, 1200V Hyperfast Dual Diode Features Package • Hyperfast with Soft Recovery .tRR Q t3 > 01 +V L1 t≤ A(MIN)1 R4 10 0 dIFtLIRR t LOOP F2 dt tA tBRt21 DUT Q4 0.25 IRM t3 IRM C1R04VR Q3 -V2 R -V3 4 VRM FIGURE 1. tRR TEST CIRCUIT FIGURE 2. tRR WAVEFORMS AND DEFINITIONS 400 1000 +175oC +100oC +175oC +100oC +25oC +25oC 1 0.1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 200 400 600 800 100...
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SEMICONDUCTORRHR1Y75120CC October 1995 75A, 1200V Hyperfast Dual Diode

Features Package

• Hyperfast with Soft Recovery .<85ns JEDEC TO-264AA • Operating Temperature ..+175oC ANODE 2

CATHODE

• Reverse Voltage .1200V CATHODE ANODE 1 (BOTTOM SIDE • Avalanche Energy Rated METAL) • Planar Construction

Applications

• Switching Power Supplies • Power Switching Circuits • General Purpose

Description Symbol

The RHR1Y75120CC is a hyperfast dual diode with soft recovery characteristics (tRR < 85ns). It has half the recovery K time of ultrafast diodes and is silicon nitride passivated ion- implanted epitaxial planar construction. This device is intended for use as freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored A1 A2 charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. PACKAGING AVAILABILITY PART NUMBER PACKAGE BRAND RHR1Y75120CC TO-264AA RHR75120C NOTE: When ordering, use the entire part number. Formerly developmental type TA49042.

Absolute Maximum Ratings (Per Leg) TC = +25oC, Unless Otherwise Specified

RHR1Y75120CC UNITS Peak Repetitive Reverse Voltage .VRRM 1200 V Working Peak Reverse Voltage .VRWM 1200 V DC Blocking Voltage..VR 1200 V Average Rectified Forward Current .IF(AV) 75AToC = 42 C Repetitive Peak Surge Current.IFSM 150 A Square Wave, 20kHz Nonrepetitive Peak Surge Current .IFSM 500 A Halfwave, 1 Phase, 60Hz Maximum Power Dissipation ..PD 190 W Avalanche Energy (See Figures 10 and 11).EAVL 50 mJ Operating and Storage Temperature .T , T oSTG J -65 to +175 C Copyright © Harris Corporation 1995 File Number 4048,

Specifications RHR1Y75120CC Electrical Specifications (per leg) TC = +25oC, Unless Otherwise Specified

SYMBOL TEST CONDITION MIN TYP MAX UNITS V oF IF = 75A, TC = +25 C - - 3.2 V IF = 75A, TC = +150 oC - - 2.6 V IR VR = 1200V, TC = +25 oC - - 250 µA VR = 1200V, TC = +150 oC - - 2.0 mA tRR IF = 1A, dIF/dt = 200A/µs - - 85 ns IF = 75A, dIF/dt = 200A/µs - - 100 ns tA IF = 75A, dIF/dt = 200A/µs - 45 - ns tB IF = 75A, dIF/dt = 200A/µs - 40 - ns QRR IF = 75A, dIF/dt = 200A/µs - 380 - nC CJ VR = 10V, IF = 0A - 225 - pF RθJC - - 0.8 oC/W

DEFINITIONS

VF = Instantaneous forward voltage (pw = 300µs, D = 2%). IR = Instantaneous reverse current. tRR = Reverse recovery time (See Figure 2), summation of tA + tB. tA = Time to reach peak reverse current (See Figure 2). tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2). QRR = Reverse recovery charge. CJ = Junction Capacitance. RθJC = Thermal resistance junction to case. EAVL = Controlled Avalanche Energy (See Figures 10 and 11). pw = pulse width. D = duty cycle. V1 AMPLITUDE CONTROLS IF V2 AMPLITUDE CONTROLS dIF/dt L1 = SELF INDUCTANCE OF +V3 R4 + LLOOP R1 Q t1 ³ 5tA(MAX)2 t2 > tRR Q t3 > 01 +V L1 t≤ A(MIN)1 R4 10 0 dIFtLI

RR

t LOOP F2 dt tA tB

R

t 21 DUT Q4 0.25 IRM t3 IRM C1R04VR Q3 -V2 R -V3 4

VRM

FIGURE 1. tRR TEST CIRCUIT FIGURE 2. tRR WAVEFORMS AND DEFINITIONS, 400 1000 +175oC +100oC +175oC +100oC +25oC +25oC 1 0.1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 200 400 600 800 1000 1200 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE VOLTAGE DROP VOLTAGE TC = +25 oC, dIF/dt = 200A/µs TC = +100oC, dIF/dt = 200A/µs 100 200 80 160 t tRR RR 60 120 40 tA 80 tA tB tB 20 4000110 75 1 10 75 IF, FORWARD CURRENT (A) IF, FORWARD CURRENT (A) FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD FIGURE 6. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +25oC CURRENT AT +100oC T oC = +175 C, dIF/dt = 200A/µs 350 75 250 DC tRR SQ. WAVE 150 t 30A tB 1500110 75 25 50 75 100 125 150 175 IF , FORWARD CURRENT (A) TC, CASE TEMPERATURE ( oC) FIGURE 7. TYPICAL tRR, tA AND tB CURVES vs FORWARD FIGURE 8. CURRENT DERATING CURVE CURRENT AT +175oC t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) IF, FORWARD CURRENT (A) IF(AV), AVERAGE FORWARD CURRENT (A) t, RECOVERY TIMES (ns) IR, REVERSE CURRENT (µA), 0 50 100 150 200 VR, REVERSE VOLTAGE (V) FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE

VOLTAGE

L = 40mH R < 0.1Ω EAVL = 1/2LI 2 [VAVL/(VAVL - VDD)] Q1 AND Q2 ARE 1000V MOSFETs

L

Q R1 +

VDD

130Ω 1MΩ

DUT

Q VAVL 12V 2 CURRENT IL IL 130Ω SENSEIV

VDD

- 12V t0 t1 t2 t FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE

WAVEFORMS

CJ, JUNCTION CAPACITANCE (pF),

Packaging

TERM. 4 TO-264AAEAØS 3 LEAD JEDEC TO-264AA PLASTIC PACKAGE

ØP

INCHES MILLIMETERS SYMBOL MIN MAX MIN MAX NOTES

Q

ØR A 0.185 0.209 4.70 5.31 - Q b 0.037 0.055 0.94 1.40 3, 41 D b1 0.087 0.102 2.21 2.59 2, 3 b2 0.110 0.126 2.79 3.20 2, 3 ØR1 c 0.017 0.029 0.43 0.74 2, 3, 4bD1.007 1.047 25.58 26.59 -1 L1bE0.760 0.799 19.30 20.29 -2cLe0.215 BSC 5.46 BSC5bJ1 0.102 0.118 2.59 3.006L0.779 0.842 19.79 21.39 - 123321eL1 0.087 0.102 2.21 2.59 2J1 BACK VIEW ØP 0.122 0.138 3.10 3.51 - Q 0.240 0.256 6.10 6.50 - Q1 0.330 0.346 8.38 8.79 - ØR 0.155 0.187 3.94 4.75 - ØR1 0.085 0.093 2.16 2.36 - ØS 0.270 0.280 6.87 7.12 - NOTES: 1. These dimensions are within allowable dimensions of Rev. B of JEDEC TO-264AA outline dated 11-93. 2. Lead dimension and finish uncontrolled in L1. 3. Lead dimension (without solder). 4. Add typically 0.002 inches (0.05mm) for solder coating. 5. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 6. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D. 7. Controlling dimension: Inch. 8. Revision 1 dated 5-95.

All Harris Semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries.

Sales Office Headquarters

For general information regarding Harris Semiconductor and its products, call 1-800-4-HARRIS NORTH AMERICA EUROPE ASIA Harris Semiconductor Harris Semiconductor Harris Semiconductor PTE Ltd. P. O. Box 883, Mail Stop 53-210 Mercure Center No. 1 Tannery Road Melbourne, FL 32902 100, Rue de la Fusee Cencon 1, #09-01 TEL: 1-800-442-7747 1130 Brussels, Belgium Singapore 1334 (407) 729-4984 TEL: (32) 2.724.2111 TEL: (65) 748-4200 FAX: (407) 729-5321 FAX: (32) 2.724.22.05 FAX: (65) 748-0400SEMICONDUCTOR]
15

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