Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MURP20040CT/D POWERTAP II Package ULTRAFAST

Order this document SEMICONDUCTOR TECHNICAL DATA by MURP20040CT/D POWERTAP II Package ULTRAFAST RECTIFIER Features mesa epitaxial construction with glass passivation. Ideally suited 200 AMPERES high frequency switching power supplies; free wheeling diodes and polarity protection diodes. • Stable, High Temperature, Glass Passivated Junction • Monolithic Dual Die Construction. May be Paralleled for High Current Output Mechanical Characteristics: • Case: Molded Epoxy with Metal Heatsink Base 1 • Weight: 80 grams (approximately) 32 • Finish: All External Surfaces Corrosion Resistant CASE 357C–03...
Author: Abefor Shared: 8/19/19
Downloads: 908 Views: 2516

Content

Order this document SEMICONDUCTOR TECHNICAL DATA by MURP20040CT/D POWERTAP II Package ULTRAFAST RECTIFIER

Features mesa epitaxial construction with glass passivation. Ideally suited 200 AMPERES high frequency switching power supplies; free wheeling diodes and polarity protection diodes. • Stable, High Temperature, Glass Passivated Junction • Monolithic Dual Die Construction. May be Paralleled for High Current Output Mechanical Characteristics: • Case: Molded Epoxy with Metal Heatsink Base 1 • Weight: 80 grams (approximately) 32 • Finish: All External Surfaces Corrosion Resistant CASE 357C–03 • Base Plate Torques: See procedure given in the Package Outline Section POWERTAP II • Shipped 25 units per tray • Marking: URP20040CT MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 400 Volts Working Peak Reverse Voltage VRWM DC Blocking Voltage VR Average Rectified Forward Current Per Leg IO 100 Amps (At Rated VR, TC = 115°C) Per Package 200 Peak Repetitive Forward Current Per Leg IFRM 200 Amps (At Rated VR, Square Wave, 20 kHz, TC = 115°C) Non-Repetitive Peak Surge Current Per Package IFSM 800 Amps (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) Storage/Operating Case Temperature Tstg, TC –55 to +150 °C Operating Junction Temperature TJ –55 to +175 °C THERMAL CHARACTERISTICS Thermal Resistance — Junction–to–Case Per Leg Rtjc 0.5 °C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (1), see Figure 2 Per Leg VF TJ = 25°C TJ = 100°C Volts (IF = 100 A) 1.3 1.2 (IF = 200 A) 1.5 1.4 Maximum Instantaneous Reverse Current, see Figure 4 Per Leg IR TJ = 25°C TJ = 100°C A (VR = 400 V) 5.0 193 (VR = 200 V) 0.8 61 Typical Reverse Recovery Time (2) Per Leg TRR TJ = 25°C ns (IF = 1.0 A, di/dt = 50 A/s) 85 Typical Peak Reverse Recovery Current Per Leg IRM TJ = 25°C Amps (IF = 1.0 A, di/dt = 50 A/s) –3.0 (1) Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2%. (2) TRR measured projecting from 25% of IRM to ground. POWERTAP and SWITCHMODE are trademarks of Motorola, Inc. This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. MMoottoororloal,a In Uc. l1tr9a9f5ast Power Rectifier Data 1, 1E+3 1E+3 1E+2 1E+2 TJ = 175°C TJ = 175°C 1E+1 1E+1 TJ = 25°C TJ = 25°C TJ = 100°C TJ = 100°C 1E+0 1E+0 0.4 0.6 0.8 1.0 1.2 1.4 0.5 0.7 0.9 1.1 1.3 1.5 1.7 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage

1E – 3 1E – 2 TJ = 175°C 1E – 4 1E – 3 TJ = 100°C 1E – 4 1E – 5 TJ = 100°C 1E– 5 1E – 6 TJ = 25°C 1E– 6 1E – 7 TJ = 25°C 1E– 7 1E – 8 1E– 8 1E – 9 1E – 9 0 50 100 150 200 250 300 350 400 0 50 100 150 200 250 300 350 400 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)

Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current

160 200 dc dc 140 180 SQUARE SQUARE160 120 WAVE Ipk/Io = 10 Ipk/Io = WAVE Ipk/Io = 20 Ipk/Io = 5100 Ipk/Io = 120 80 100 Ipk/Io = 5 60 80 Ipk/Io = 10 60 Ipk/Io = 20 40 20 20 TJ = 175°C00020 40 60 80 100 120 140 160 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS)

Figure 5. Current Derating Figure 6. Forward Power Dissipation

(PER LEG) (PER LEG) 2 Motorola Ultrafast Power Rectifier Data IO , AVERAGE FORWARD CURRENT (AMPS) IR , REVERSE CURRENT (AMPS) IF , INSTANTANEOUS FORWARD CURRENT (AMPS) PFO, AVERAGE POWER DISSIPATION (WATTS) I , MAXIMUM REVERSE CURRENT (AMPS) IF , INSTANTANEOUS FORWARD CURRENT (AMPS)R, 1E+4 TJ = 25°C 1E+3 1E+2 1E+0 1E+1 1E+2 1E+3 VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Capacitance

1E+0 1E–1 Rtjc(t) = Rtjc*r(t) 1E– 2 1E– 5 1E– 4 1E– 3 1E– 2 1E–1 1E+0 1E+1 1E+2 t, TIME (ms)

Figure 8. Thermal Response

VCC + 150 V, 12 Vdc 10 mAdc2k12 V 100 2N2222 D.U.T. 2s1kHz CURRENT 2N6277 + AMPLITUDE 1004FADJUST CARBON 1 CARBON 0 –10 AMPS 1N5817

Figure 9. Test Circuit for Repetitive Reverse Current Motorola Ultrafast Power Rectifier Data 3

R(T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) C, CAPACITANCE (pF), MAXIMUM MECHANICAL RATINGS POWERTAP MECHANICAL DATA APPLIES OVER OPERATING TEMPERATURE Terminal Penetration: 0.235 max Terminal Torque: 70 in-lb max 2″ Mounting Torque — Outside Holes: 70 in-lb max Mounting Torque — Vertical Pull 2 in. Lever Pull Center Hole: 8–10 in-lb max 250 lbs. max 50 lbs. max Seating Plane 1 mil per in. Flatness (between mounting holes) Note: While the POWERTAP is capable of sustaining these vertical and levered tensions, the intimate contact Note: between POWERTAP and heat sink may be lost. This could lead to thermal runaway. The use of very Note: flexible leads is recommended for the anode connections. Use of thermal grease is highly recommended.

MOUNTING PROCEDURE

The POWERTAP package requires special mounting considerations because of the long longitudinal axis of the copper heat sink. It is important to follow the proper tightening sequence to avoid warping the heat sink, which can reduce thermal contact between the POWERTAP and heat sink. 2–3 TURNS 2–3 TURNS 2–3 TURNS STEP 1: Locate the POWERTAP on the heat sink and start mounting bolts into the threads by hand POWER TAP (2 or 3 turns).

HEAT SINK

2–3 TURNS FINGER-TIGHT 2–3 TURNS STEP 2: Finger tighten the center bolt. The bolt may catch on the threads of the heat sink so it is im- POWER TAP portant to make sure the face of the bolt or washer is in contact with the surface of the HEAT SINK POWERTAP. 5–10 IN-LB FINGER-TIGHT 5–10 IN-LB STEP 3: Tighten each of the end bolts between 5 to 10 in-lb. POWER TAP

HEAT SINK

5–10 IN-LB 8–10 IN-LB 5–10 IN-LB STEP 4: Tighten the center bolt between 8 to 10 in-lb. POWER TAP

HEAT SINK

70 IN-LB 8–10 IN-LB 70 IN-LB STEP 5: Finally, tighten the end bolts to 70 in-lb. POWER TAP

HEAT SINK

4 Motorola Ultrafast Power Rectifier Data,

PACKAGE DIMENSIONS

NOTES: -A- W 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

R 0.25 (0.010) MTAMBM2. CONTROLLING DIMENSION: INCH.

3. TERMINAL PENETRATION: 5.97 (0.235) MAXIMUM.

G N INCHES MILLIMETERS

DIM MIN MAX MIN MAX -B- A 3.450 3.635 87.63 92.33 B 0.700 0.810 17.78 20.57

Q 2 PL C 0.615 0.640 15.53 16.26

E 0.120 0.130 3.05 3.30

H F 0.25 (0.010) MTAMBMF0.435 0.445 11.05 11.30

G 1.370 1.380 34.80 35.05 H 0.007 0.030 0.18 0.76 N 1/4–20UNC 2B 1/4–20UNC 2B SEATING Q 0.270 0.285 6.86 7.32

C -T- PLANE R 31.50 BSC 80.01 BSC E U 0.600 0.630 15.24 16.00 UVV0.330 0.375 8.39 9.52

W 0.170 0.190 4.32 4.82

CASE 357C–03 ISSUE C Motorola Ultrafast Power Rectifier Data 5

, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: email is hidden – TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 6 ◊ Motorola Ultrafast PoweMr URRePc2ti0fi0e4r0 DCaTt/aD]
15

Similar documents

Order this document
Order this document SEMICONDUCTOR TECHNICAL DATA by MURP20020CT/D Motorola Preferred Devices .designed for use in switching power supplies, inverters, and as free wheeling diodes. These state–of–the–art devices have the following features: • Dual Diode Construction ULTRAFAST • Low Leakage Current R
Order this document
Order this document SEMICONDUCTOR TECHNICAL DATA by MURHF860CT/D .designed for use in switching power supplies, inverters and as free Motorola Preferred Device wheeling diodes, these state-of-the-art devices have the following features: • Ultrafast 35 Nanosecond Recovery Times • 175°C Operating Jun
Order this document SEMICONDUCTOR TECHNICAL DATA by MURHB840CT/D   D2PAK Power Surface Mount Package Motorola Preferred Device
Order this document SEMICONDUCTOR TECHNICAL DATA by MURHB840CT/D D2PAK Power Surface Mount Package Motorola Preferred Device Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Package Designed for Power
Order this document SEMICONDUCTOR TECHNICAL DATA by MURH860CT/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MURH860CT/D .designed for use in switching power supplies, inverters and as free Motorola Preferred Device wheeling diodes, these state-of-the-art devices have the following features: • Ultrafast 35 Nanosecond Recovery Times • 175°C Operating Jun
Order this document SEMICONDUCTOR TECHNICAL DATA by MURH840CT/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MURH840CT/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: Motorola Preferred Device • Ultrafast 28 Nanosecond Recovery Time • 175°C Operating Junct
Order this document SEMICONDUCTOR TECHNICAL DATA by MURH8100E/D  Plastic TO–220 Package
Order this document SEMICONDUCTOR TECHNICAL DATA by MURH8100E/D Plastic TO–220 Package ULTRAFAST RECTIFIER Features mesa epitaxial construction with glass passivation. Ideally suited high 8.0 AMPERES frequency switching power supplies; free wheeling diodes; polarity protection diodes; 1000 VOLTS an
Order this document SEMICONDUCTOR TECHNICAL DATA by MURF820/D  Motorola Preferred Device
Order this document SEMICONDUCTOR TECHNICAL DATA by MURF820/D Motorola Preferred Device Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 ns Recovery Times ULTRAFAST RECTIFIER • 150°C Opera
Order this document SEMICONDUCTOR TECHNICAL DATA by MURF1660CT/D  Motorola Preferred Device
Order this document SEMICONDUCTOR TECHNICAL DATA by MURF1660CT/D Motorola Preferred Device Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 60 Nanosecond Recovery Times ULTRAFAST RECTIFIER •
Order this document SEMICONDUCTOR TECHNICAL DATA by MURF1620CT/D  Motorola Preferred Device
Order this document SEMICONDUCTOR TECHNICAL DATA by MURF1620CT/D Motorola Preferred Device Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 Nanosecond Recovery Times ULTRAFAST RECTIFIER •
Order this document SEMICONDUCTOR TECHNICAL DATA by MURD620CT/D  DPAK Surface Mount Package
Order this document SEMICONDUCTOR TECHNICAL DATA by MURD620CT/D DPAK Surface Mount Package .designed for use in switching power supplies, inverters and as MURD620CT is a free wheeling diodes, these state–of–the–art devices have the Motorola Preferred Device following features: • Ultrafast 35 Nanose
Order this document SEMICONDUCTOR TECHNICAL DATA by MURD320/D  DPAK Surface Mount Package
Order this document SEMICONDUCTOR TECHNICAL DATA by MURD320/D DPAK Surface Mount Package .designed for use in switching power supplies, inverters and as MURD320 is a free wheeling diodes, these state–of–the–art devices have the Motorola Preferred Device following features: • Ultrafast 35 Nanosecond
Order this document SEMICONDUCTOR TECHNICAL DATA by MURB1660CT/D   D2PAK Power Surface Mount Package Motorola Preferred Device
Order this document SEMICONDUCTOR TECHNICAL DATA by MURB1660CT/D D2PAK Power Surface Mount Package Motorola Preferred Device Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Package Designed for Power
Order this document SEMICONDUCTOR TECHNICAL DATA by MURB1620CT/D   D2PAK Power Surface Mount Package Motorola Preferred Device
Order this document SEMICONDUCTOR TECHNICAL DATA by MURB1620CT/D D2PAK Power Surface Mount Package Motorola Preferred Device Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Package Designed for Power
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR820/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR820/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Time Motorola Preferred Devices • 175°C Operat
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR620CT/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR620CT/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 Nanosecond Recovery Time Motorola Preferred Device • 175°C Operating Juncti
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
PD - 91352B IRF530NS IRF530NL HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 100V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 90mΩ Fast Switching G Fully Avalanche Rated ID = 17A S Description Advanced HEXFET® Power MOSFETs from International Rectifi
Data Sheet No. PD60173-E HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation Packages • Gate drive supply range from 10 to 20V 8-Lead SOIC
Data Sheet No. PD60173-E HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation Packages Fully operational to +600V Tolerant to negative transient voltage 14-Lead PDIP dV/dt immune IR21834 • Gate drive supply range from 10 to 20V 8-Lead SOIC • Undervoltage lockout for both c
NEW PRODUCTS applications where the 7.5 A rating of the BT151 is not
NEW PRODUCTS applications where the 7.5 A rating of the BT151 is not required (Types: BT300-500R, BT300-600R, BT300-800R). Philips Semiconductors are working intensively on NEW5ARATED, LOGIC LEVEL THYRISTOR bringing new products to the market to meet the requirements of existing and new developing a
Features Description Applications HFA3102Y Die
SEMICONDUCTORHFA3102 August 1994 Dual Long-Tailed Pair Transistor Array Features Description • High Gain-Bandwidth Product (fT) .10GHz The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on • High Power Gain-Bandwidth Product .5GHz Harri
Features Description Ordering Information Applications
SEMICONDUCTORHFA3101 July 1995 Gilbert Cell UHF Transistor Array Features Description • High Gain Bandwidth Product (fT) .10GHz The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Harris bonded wafer UHF-1 SOI • High Power Gain Bandwidth Product .5GHz process, this a
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
GA100TS60U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology VCES = 600V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 VCE(on) typ. = 1.6V kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ an
MITSUBISHI Nch POWER MOSFET
FS7KM-12 FS7KM-12 OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 2.54 ± 0.25 2.54 ± 0.25123wqGATE ¡V w DRAINDSS ... 600VqeSOURCE ¡rDS (ON) (MAX) ... 1.3Ω ¡ID ... 7A e ¡Viso ... 2000V TO-220FN APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, F
Small Signal FET
Small Signal FET ■ 2SK type (Junction type) Absolute maximum ratings Electrical characteristics Part number Package (TA = 25 °C) (TA = 25 °C) Applications VGDO (V) ID (mA) PT (mW) |Yfs1| (ms) IDSS (mA) 2SK104 TO-92 30 20 250 2.5 TYP. 2.5 TYP. HF amplification 2SK105 TO-92 50 20 250 2.1 2.5 AF amplif
MOTOROLA SEMICONDUCTOR TECHNICAL DATA GENERAL 500 mW DO-35 Glass DATA Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN 500 mW THIS GROUP DO-35 GLASS
MOTOROLA SEMICONDUCTOR TECHNICAL DATA GENERAL 500 mW DO-35 Glass DATA Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN 500 mW THIS GROUP DO-35 GLASS 500 Milliwatt Hermetically Sealed GLASS ZENER DIODES500 MILLIWATTS Glass Silicon Zener Diodes 1.8–200 VOLTS Specification Featur
SEMICONDUCTOR GENERAL 225 mW SOT-23 DATA Zener Voltage Regulator Diodes Zener Voltage Regulator Diodes
MOTOROLA SEMICONDUCTOR TECHNICAL DATA GENERAL 225 mW SOT-23 DATA Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN 225 mW THIS GROUP SOT-23 Zener Voltage Regulator Diodes31Cathode Anode Manufacturing Locations: WAFER FAB: Phoenix, Arizona ASSEMBLY: Seremban, Malaysia TEST: Sere
SEMICONDUCTOR Temperature-Compensated 1N821,A 1N823,A Zener Reference Diodes 1N825,A 1N827,A1N829,A
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Temperature-Compensated 1N821,A 1N823,A Zener Reference Diodes 1N825,A 1N827,A1N829,A Temperature-compensated zener reference diodes utilizing a single chip oxide passi- vated junction for long-term voltage stability. A rugged, glass-enclosed, hermetically seale
MOTOROLA SEMICONDUCTOR TECHNICAL DATA
MOTOROLA SEMICONDUCTOR TECHNICAL DATA % $ # ADDITIONAL VOLTAGES AVAILABLE ! Motorola Preferred Device !"# # $ !""! ! !## SOT-23 DUAL ZENER OVERVOLTAGE This dual monolithic silicon zener diode is designed for applications requiring transient TRANSIENT SUPPRESSOR overvoltage protection capability. It
SEMICONDUCTOR P6KE6.8A Zener Transient Voltage Suppressors through Undirectional and Bidirectional P6KE200A
MOTOROLA SEMICONDUCTOR TECHNICAL DATA P6KE6.8A Zener Transient Voltage Suppressors through Undirectional and Bidirectional P6KE200A The P6KE6.8A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge c
Order this document SEMICONDUCTOR TECHNICAL DATA by P4SMA16AT3/D
Order this document SEMICONDUCTOR TECHNICAL DATA by P4SMA16AT3/D -*# !" (-', * '+%"', (&, $" -))*"++(*+ Specification Features: • Nominal Breakdown Voltage Range – 16 V PLASTIC SURFACE MOUNT • Peak Power – 400 Watts @ 1ms ESD OVERVOLTAGE • 16KV ESD IMMUNITY (Class 3 per Human Body Model) TRANSIENT S
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet $! $# ! " "# % Three complete series of Zener Diodes are offered in the convenient, surface mount plastic SOD-123 package. These devices provide a convenient alternative to the leadless 34 package style. *Motorola Preferred Device Serie