Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MURB1620CT/D D2PAK Power Surface Mount Package Motorola Preferred Device

Order this document SEMICONDUCTOR TECHNICAL DATA by MURB1620CT/D D2PAK Power Surface Mount Package Motorola Preferred Device Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Package Designed for Power Surface Mount Applications • Ultrafast 35 Nanosecond Recovery Times ULTRAFAST RECTIFIER • 175°C Operating Junction Temperature 16 AMPERES • Epoxy Meets UL94, VO @ 1/8″ 200 VOLTS • High Temperature Glass Passivated Junction • Low Leakage Specified @ 150°C Case Temperature • Short Heat Sink Tab Manuf...
Author: Abefor Shared: 8/19/19
Downloads: 1330 Views: 2934

Content

Order this document SEMICONDUCTOR TECHNICAL DATA by MURB1620CT/D D2PAK Power Surface Mount Package Motorola Preferred Device

Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Package Designed for Power Surface Mount Applications • Ultrafast 35 Nanosecond Recovery Times ULTRAFAST RECTIFIER • 175°C Operating Junction Temperature 16 AMPERES • Epoxy Meets UL94, VO @ 1/8″ 200 VOLTS • High Temperature Glass Passivated Junction • Low Leakage Specified @ 150°C Case Temperature • Short Heat Sink Tab Manufactured — Not Sheared! • Similar in Size to Industrial Standard TO–220 Package 4 Mechanical Characteristics 4 • Case: Epoxy, Molded 1 • Weight: 1.7 grams (approximately) 3 • Finish: All External Surfaces Corrosion Resistant and Terminal CASE 418B–02 Leads are Readily Solderable D2PAK • Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds • Shipped 50 units per plastic tube • Available in 24 mm Tape and Reel, 800 units per reel by adding a “T4” suffix to the part number • Marking: U1620T MAXIMUM RATING, PER LEG Rating Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 200 Volts Working Peak Reverse Voltage VRWM DC Blocking Voltage VR Average Rectified Forward Current IF(AV) 8 Amps Total Device, (Rated VR), TC = 150°C Total Device 16 Peak Repetitive Forward Current IFM 16 Amps (Rated VR, Square Wave, 20 kHz), TC = 150°C Non–repetitive Peak Surge Current IFSM 100 Amps (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction and Storage Temperature TJ, Tstg – 65 to +175 °C THERMAL CHARACTERISTICS, PER LEG Maximum Thermal Resistance, Junction to Case RθJC 3 °C/W Maximum Thermal Resistance, Junction to Ambient (1) RθJA 50 °C/W Temperature for Soldering TL 260 °C Purposes: 1/8″ from Case for 5 Seconds (1) See Chapter 7 for mounting conditions Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Designer’s and SWITCHMODE are trademarks of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. Rev1RMeoctotriofilea,r InDce. 1v9ic96e Data 1,

ELECTRICAL CHARACTERISTICS, PER LEG

Characteristic Symbol Max Unit Maximum Instantaneous Forward Voltage (2) vF Volts (iF = 8 Amp, TC = 150°C) 0.895 (iF = 8 Amp, TC = 25°C) 0.975 Maximum Instantaneous Reverse Current (2) iR µA (Rated dc Voltage, TC = 150°C) 250 (Rated dc Voltage, TC = 25°C) 5 Maximum Reverse Recovery Time trr ns (IF = 1 Amp, di/dt = 50 Amp/µs) 35 (IF = 0.5 Amp, iR = 1 Amp, IREC = 0.25 Amp) 25 (2) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤2.0% 100 10 K 1.0 K 20 400 10 100

T

5.0 J = 175°C 2.0 4 1.0 TJ = 175°C 100°C 25°C 100°C 0.7 0.2 25°C 0.3 0.04 0.1 0.01 0.2 0.4 0.6 0.8 1 1.2 0 20 40 60 80 100 120 140 160 180 200 vF, INSTANTANEOUS VOLTAGE (V) VR, REVERSE VOLTAGE (V)

Figure 1. Typical Forward Voltage, Per Leg Figure 2. Typical Reverse Current, Per Leg*

10 10 RATED VR APPLIED 9.0 RθJC = 3°C/W 9.0 TJ = 175°C8.0 8.0

DC

7.0 7.0 SQUARE WAVE 6.0 6.0

DC

5.0 5.0 4.0 4.0 SQUARE WAVE 3.0 3.0 2.0 2.0 1.0 1.0 140 150 160 170 1800012345678910 TC, CASE TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (AMPS)

Figure 3. Current Derating Case, Per Leg Figure 4. Power Dissipation, Per Leg

2 Rectifier Device Data I F(AV), AVERAGE POWER DISSIPATION (WATTS) iF , INSTANTANEOUS FORWARD CURRENT (AMPS) P , AVERAGE POWER DISSIPATION (WATTS) I R, REVERSE CURRENT (µA)F(AV), D = 0.5 0.5 0.2 0.1 P(pk) ZθJC(t) = r(t) RθJC 0.1 D curves apply for power0.05 pulse train shown 0.01 0.05 t1 read time at T1 t2 SINGLE PULSE Duty Cycle, D = t1/t2 TJ(pk) – TC = P(pk) ZθJC(t) 0.02 0.01 0.01 0.02 0.05 0.1 0.2 0.512510 20 50 100 200 500 1K t, TIME (ms)

Figure 5. Thermal Response

1 K TJ = 25°C 1 10 100 VR, REVERSE VOLTAGE (V)

Figure 6. Typical Capacitance, Per Leg Rectifier Device Data 3

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) C, CAPACITANCE (pF),

INFORMATION FOR USING THE D2PAK SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total between the board and the package. With the correct pad design. The footprint for the semiconductor packages must be geometry, the packages will self align when subjected to a the correct size to insure proper solder connection interface solder reflow process. 0.74 18.79 0.065 1.651 0.420 10.66 0.07 1.78 0.14 0.330 3.56 8.38 inches mm D2PAK POWER DISSIPATION The power dissipation of the D2PAK is a function of the drain the equation for an ambient temperature TA of 25°C, one can pad size. This can vary from the minimum pad size for calculate the power dissipation of the device which in this case soldering to a pad size given for maximum power dissipation. is 3.0 watts. Power dissipation for a surface mount device is determined by 175°C – 25°C TJ(max), the maximum rated junction temperature of the die, PD = = 3.0 watts RθJA, the thermal resistance from the device junction to 50°C/W ambient; and the operating temperature, TA. Using the values The 50°C/W for the D2PAK package assumes the provided on the data sheet for the D2PAK package, PD can be recommended drain pad area of 158K mil2 on FR–4 glass calculated as follows: epoxy printed circuit board to achieve a power dissipation of TJ(max) – TA 3.0 watts using the footprint shown. Another alternative is to PD = R use a ceramic substrate or an aluminum core board such asθJA Thermal Clad. By using an aluminum core board material The values for the equation are found in the maximum such as Thermal Clad, the power dissipation can be doubled ratings table on the data sheet. Substituting these values into using the same footprint. GENERAL SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated • When shifting from preheating to soldering, the maximum temperature of the device. When the entire device is heated temperature gradient shall be 5°C or less. to a high temperature, failure to complete soldering within a • After soldering has been completed, the device should be short time could result in device failure. Therefore, the allowed to cool naturally for at least three minutes. following items should always be observed in order to Gradual cooling should be used as the use of forced minimize the thermal stress to which the devices are cooling will increase the temperature gradient and result subjected. in latent failure due to mechanical stress. • Always preheat the device. • Mechanical stress or shock should not be applied during • The delta temperature between the preheat and soldering cooling should be 100°C or less.* • When preheating and soldering, the temperature of the * Soldering a device without preheating can cause excessive leads and the case must not exceed the maximum thermal shock and stress which can result in damage to the temperature ratings as shown on the data sheet. When device. using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. * Due to shadowing and the inability to set the wave height to • The soldering temperature and time shall not exceed incorporate other surface mount components, the D2PAK is 260°C for more than 5 seconds. not recommended for wave soldering. 4 Rectifier Device Data,

RECOMMENDED PROFILE FOR REFLOW SOLDERING

For any given circuit board, there will be a group of control the graph shows the actual temperature that might be settings that will give the desired heat pattern. The operator experienced on the surface of a test board at or near a central must set temperatures for several heating zones, and a figure solder joint. The two profiles are based on a high density and for belt speed. Taken together, these control settings make up a low density board. The Vitronics SMD310 convection/in- a heating “profile” for that particular circuit board. On frared reflow soldering system was used to generate this machines controlled by a computer, the computer remembers profile. The type of solder used was 62/36/2 Tin Lead Silver these profiles from one operating session to the next. Figure with a melting point between 177–189°C. When this type of 7 shows a typical heating profile for use when soldering the furnace is used for solder reflow work, the circuit boards and D2PAK to a printed circuit board. This profile will vary among solder joints tend to heat first. The components on the board soldering systems but it is a good starting point. Factors that are then heated by conduction. The circuit board, because it can affect the profile include the type of soldering system in has a large surface area, absorbs the thermal energy more use, density and types of components on the board, type of efficiently, then distributes this energy to the components. solder used, and the type of board or substrate material being Because of this effect, the main body of a component may be used. This profile shows temperature versus time. The line on up to 30 degrees cooler than the adjacent solder joints. STEP 1 STEP 2 STEP 3 STEP 4 STEP 5 STEP 6 STEP 7 PREHEAT VENT HEATING HEATING HEATING VENT COOLING ZONE 1 “SOAK” ZONES 2 & 5 ZONES 3 & 6 ZONES 4 & 7 “RAMP” “RAMP” “SOAK” “SPIKE” 205° TO 219°C PEAK AT 200°C 170°C SOLDER JOINT DESIRED CURVE FOR HIGH MASS ASSEMBLIES 160°C 150°C 150°C SOLDER IS LIQUID FOR 40 TO 80 SECONDS 100°C 140°C (DEPENDING ON 100°C MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES 50°C TIME (3 TO 7 MINUTES TOTAL) TMAX Figure 7. Typical Solder Heating Profile for D2PAK Rectifier Device Data 5,

PACKAGE DIMENSIONS C E V B NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI 4 Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS

A DIM MIN MAX MIN MAX S A 0.340 0.380 8.64 9.65

123B0.380 0.405 9.65 10.29 C 0.160 0.190 4.06 4.83 D 0.020 0.035 0.51 0.89 –T– K E 0.045 0.055 1.14 1.40 SEATING G 0.100 BSC 2.54 BSC PLANEJH0.080 0.110 2.03 2.79G J 0.018 0.025 0.46 0.64 K 0.090 0.110 2.29 2.79

H S 0.575 0.625 14.60 15.88 D 3 PL V 0.045 0.055 1.14 1.40

0.13 (0.005) M T STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE

CASE 418B–02 ISSUE B

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 81–3–3521–8315 Mfax: email is hidden – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET: http://motorola.com/sps 6 ◊ RectifieMr UDReBvi1c6e2 0DCaTta/D]
15

Similar documents

Order this document SEMICONDUCTOR TECHNICAL DATA by MUR820/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR820/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Time Motorola Preferred Devices • 175°C Operat
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR620CT/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MUR620CT/D .designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 Nanosecond Recovery Time Motorola Preferred Device • 175°C Operating Juncti
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
PD - 91352B IRF530NS IRF530NL HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 100V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 90mΩ Fast Switching G Fully Avalanche Rated ID = 17A S Description Advanced HEXFET® Power MOSFETs from International Rectifi
Data Sheet No. PD60173-E HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation Packages • Gate drive supply range from 10 to 20V 8-Lead SOIC
Data Sheet No. PD60173-E HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation Packages Fully operational to +600V Tolerant to negative transient voltage 14-Lead PDIP dV/dt immune IR21834 • Gate drive supply range from 10 to 20V 8-Lead SOIC • Undervoltage lockout for both c
NEW PRODUCTS applications where the 7.5 A rating of the BT151 is not
NEW PRODUCTS applications where the 7.5 A rating of the BT151 is not required (Types: BT300-500R, BT300-600R, BT300-800R). Philips Semiconductors are working intensively on NEW5ARATED, LOGIC LEVEL THYRISTOR bringing new products to the market to meet the requirements of existing and new developing a
Features Description Applications HFA3102Y Die
SEMICONDUCTORHFA3102 August 1994 Dual Long-Tailed Pair Transistor Array Features Description • High Gain-Bandwidth Product (fT) .10GHz The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on • High Power Gain-Bandwidth Product .5GHz Harri
Features Description Ordering Information Applications
SEMICONDUCTORHFA3101 July 1995 Gilbert Cell UHF Transistor Array Features Description • High Gain Bandwidth Product (fT) .10GHz The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Harris bonded wafer UHF-1 SOI • High Power Gain Bandwidth Product .5GHz process, this a
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
GA100TS60U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology VCES = 600V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 VCE(on) typ. = 1.6V kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ an
MITSUBISHI Nch POWER MOSFET
FS7KM-12 FS7KM-12 OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 2.54 ± 0.25 2.54 ± 0.25123wqGATE ¡V w DRAINDSS ... 600VqeSOURCE ¡rDS (ON) (MAX) ... 1.3Ω ¡ID ... 7A e ¡Viso ... 2000V TO-220FN APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, F
Small Signal FET
Small Signal FET ■ 2SK type (Junction type) Absolute maximum ratings Electrical characteristics Part number Package (TA = 25 °C) (TA = 25 °C) Applications VGDO (V) ID (mA) PT (mW) |Yfs1| (ms) IDSS (mA) 2SK104 TO-92 30 20 250 2.5 TYP. 2.5 TYP. HF amplification 2SK105 TO-92 50 20 250 2.1 2.5 AF amplif
MOTOROLA SEMICONDUCTOR TECHNICAL DATA GENERAL 500 mW DO-35 Glass DATA Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN 500 mW THIS GROUP DO-35 GLASS
MOTOROLA SEMICONDUCTOR TECHNICAL DATA GENERAL 500 mW DO-35 Glass DATA Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN 500 mW THIS GROUP DO-35 GLASS 500 Milliwatt Hermetically Sealed GLASS ZENER DIODES500 MILLIWATTS Glass Silicon Zener Diodes 1.8–200 VOLTS Specification Featur
SEMICONDUCTOR GENERAL 225 mW SOT-23 DATA Zener Voltage Regulator Diodes Zener Voltage Regulator Diodes
MOTOROLA SEMICONDUCTOR TECHNICAL DATA GENERAL 225 mW SOT-23 DATA Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN 225 mW THIS GROUP SOT-23 Zener Voltage Regulator Diodes31Cathode Anode Manufacturing Locations: WAFER FAB: Phoenix, Arizona ASSEMBLY: Seremban, Malaysia TEST: Sere
SEMICONDUCTOR Temperature-Compensated 1N821,A 1N823,A Zener Reference Diodes 1N825,A 1N827,A1N829,A
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Temperature-Compensated 1N821,A 1N823,A Zener Reference Diodes 1N825,A 1N827,A1N829,A Temperature-compensated zener reference diodes utilizing a single chip oxide passi- vated junction for long-term voltage stability. A rugged, glass-enclosed, hermetically seale
MOTOROLA SEMICONDUCTOR TECHNICAL DATA
MOTOROLA SEMICONDUCTOR TECHNICAL DATA % $ # ADDITIONAL VOLTAGES AVAILABLE ! Motorola Preferred Device !"# # $ !""! ! !## SOT-23 DUAL ZENER OVERVOLTAGE This dual monolithic silicon zener diode is designed for applications requiring transient TRANSIENT SUPPRESSOR overvoltage protection capability. It
SEMICONDUCTOR P6KE6.8A Zener Transient Voltage Suppressors through Undirectional and Bidirectional P6KE200A
MOTOROLA SEMICONDUCTOR TECHNICAL DATA P6KE6.8A Zener Transient Voltage Suppressors through Undirectional and Bidirectional P6KE200A The P6KE6.8A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge c
Order this document SEMICONDUCTOR TECHNICAL DATA by P4SMA16AT3/D
Order this document SEMICONDUCTOR TECHNICAL DATA by P4SMA16AT3/D -*# !" (-', * '+%"', (&, $" -))*"++(*+ Specification Features: • Nominal Breakdown Voltage Range – 16 V PLASTIC SURFACE MOUNT • Peak Power – 400 Watts @ 1ms ESD OVERVOLTAGE • 16KV ESD IMMUNITY (Class 3 per Human Body Model) TRANSIENT S
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet $! $# ! " "# % Three complete series of Zener Diodes are offered in the convenient, surface mount plastic SOD-123 package. These devices provide a convenient alternative to the leadless 34 package style. *Motorola Preferred Device Serie
Order this document SEMICONDUCTOR TECHNICAL DATA by MMQA/D Transient Voltage Suppressor for ESD Protection SC-59 QUADTRANSIENT VOLTAGE
Order this document SEMICONDUCTOR TECHNICAL DATA by MMQA/D Motorola Preferred Devices Transient Voltage Suppressor for ESD Protection SC-59 QUADTRANSIENT VOLTAGE This quad monolithic silicon voltage suppressor is designed for applications SUPPRESSOR 24 WATTS PEAK POWER requiring transient overvoltag
Order this document SEMICONDUCTOR TECHNICAL DATA by MMQA5V6T1/D Transient Voltage Suppressor SC-59 QUAD for ESD Protection TRANSIENT VOLTAGE
Order this document SEMICONDUCTOR TECHNICAL DATA by MMQA5V6T1/D Motorola Preferred Devices Transient Voltage Suppressor SC-59 QUAD for ESD Protection TRANSIENT VOLTAGE SUPPRESSOR This quad monolithic silicon voltage suppressor is designed for applications 5.6 VOLTS (4) requiring transient overvoltag
Order this document
Order this document SEMICONDUCTOR TECHNICAL DATA by MMBZ5V6ALT1/D "% & "!"% " "! !" !#$ Transient Voltage Suppressors Motorola Preferred Devices for ESD Protection These dual monolithic silicon zener diodes are designed for applications SOT–23 COMMON ANODE DUAL requiring transient overvoltage protec
SEMICONDUCTOR GENERAL 500 mW DO-35 Glass DATA Zener Voltage Regulator Diodes 500 Milliwatt Hermetically Sealed GLASS ZENER DIODES500 MILLIWATTS Glass Silicon Zener Diodes 1.8–200 VOLTS
MOTOROLA SEMICONDUCTOR TECHNICAL DATA GENERAL 500 mW DO-35 Glass DATA Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN 500 mW THIS GROUP DO-35 GLASS 500 Milliwatt Hermetically Sealed GLASS ZENER DIODES500 MILLIWATTS Glass Silicon Zener Diodes 1.8–200 VOLTS Specification Featur
MOTOROLA SEMICONDUCTOR TECHNICAL DATA GENERAL 1 to 3 Watt DO-41 Surmetic 30 DATA Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN 1–3 WATT
MOTOROLA SEMICONDUCTOR TECHNICAL DATA GENERAL 1 to 3 Watt DO-41 Surmetic 30 DATA Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN 1–3 WATT THIS GROUP DO-41 1 to 3 Watt Surmetic 30 SURMETIC 30 Silicon Zener Diodes 1 TO 3 WATT .a complete series of 1 to 3 Watt Zener Diodes with
MOTOROLA SEMICONDUCTOR TECHNICAL DATA GENERAL 1–1.3 Watt DO-41 Glass DATA Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN 1–1.3 WATT
MOTOROLA SEMICONDUCTOR TECHNICAL DATA GENERAL 1–1.3 Watt DO-41 Glass DATA Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN 1–1.3 WATT THIS GROUP DO-41 GLASS One Watt Hermetically Sealed Glass Silicon Zener Diodes 1 WATTZENER REGULATOR DIODES Specification Features: 3.3–100 VOL
MOTOROLA SEMICONDUCTOR TECHNICAL DATA
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Field-effect current regulator diodes are circuit elements that provide a current essentially independent of voltage. These diodes are especially designed for maximum impedance over the operating range. These devices may be used in parallel to obtain higher curr
TRANSIENT VOLTAGE SUPPRESSORS General Instruments CROSS REFERENCE OPTOELECTRONIC AND SIGNAL PRODUCTS DIVISION
CR103/D REV 1 TRANSIENT VOLTAGE SUPPRESSORS General Instruments CROSS REFERENCE OPTOELECTRONIC AND SIGNAL PRODUCTS DIVISION Transient Voltage Suppressors General Instruments CROSS REFERENCE GI Part Description: 1.5KA series GI Part Description: 1.5KE series (continued) GI Part Description: 1N6267A s
SEMICONDUCTOR 3 Watt Plastic Surface Mount 1SMB5913BT3 Silicon Zener Diodes through 1SMB5956BT3
MOTOROLA SEMICONDUCTOR TECHNICAL DATA 3 Watt Plastic Surface Mount 1SMB5913BT3 Silicon Zener Diodes through 1SMB5956BT3 This complete new line of 3 Watt Zener Diodes offers the following advantages. Specification Features: • A Complete Voltage Range — 3.3 to 200 Volts • Flat Handling Surface for Acc
Order this document SEMICONDUCTOR TECHNICAL DATA by 1SMA5913BT3/D !
Order this document SEMICONDUCTOR TECHNICAL DATA by 1SMA5913BT3/D !" !! ! " "! This complete new line of 1.5 Watt Zener Diodes offers the following PLASTIC SURFACE advantages. MOUNT ZENER DIODES Specification Features: 1.5 WATTS • Voltage Range – 3.3 to 68 V 3.3–68 VOLTS • ESD Rating of Class 3 (>1
Order this document SEMICONDUCTOR TECHNICAL DATA by 1SMA5.0AT3/D
Order this document SEMICONDUCTOR TECHNICAL DATA by 1SMA5.0AT3/D Specification Features: • Reverse Stand–Off Voltage Range: 5.0–78 V • Peak Power — 400 Watts @ 1.0 ms PLASTIC SURFACE MOUNT • ESD Rating of Class 3 (>16 kV) per Human Body Model ZENER OVERVOLTAGE • Pico Seconds Response Time (0 V to BV
Order this document SEMICONDUCTOR TECHNICAL DATA by 1SMA10CAT3/D
Order this document SEMICONDUCTOR TECHNICAL DATA by 1SMA10CAT3/D Specification Features: • Reverse Stand–Off Voltage Range: 10–78 V • Bidirectional Operation PLASTIC SURFACE MOUNT • Peak Power — 400 Watts @ 1.0 ms BIDIRECTIONAL ZENER OVERVOLTAGE • ESD Rating of Class 3 (>16 kV) per Human Body Model
Order this document SEMICONDUCTOR TECHNICAL DATA by 1PMT5913BT3/D %#
Order this document SEMICONDUCTOR TECHNICAL DATA by 1PMT5913BT3/D %#"& %% $% &# "&!% "! !# "$ "'# % This complete new line of zener/tvs diodes offers a 2.5 watt series in a micro PLASTIC SURFACE MOUNT miniature, space saving surface mount package. The Powermite zener/tvs ZENER DIODES diodes are desi