Download: Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

PD - 91352B IRF530NS IRF530NL HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 100V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 90mΩ Fast Switching G Fully Avalanche Rated ID = 17A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device fo...
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PD - 91352B

IRF530NS IRF530NL HEXFET® Power MOSFET

Advanced Process Technology D Ultra Low On-Resistance VDSS = 100V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 90mΩ Fast Switching G Fully Avalanche Rated ID = 17A

S Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the 2 lowest possible on-resistance in any existing surface mount package. The D Pak TO-262 D2Pak is suitable for high current applications because of its low internal IRF530NS IRF530NL connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF530NL) is available for low-profile applications.

Absolute Maximum Ratings

Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 17 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12 A IDM Pulsed Drain Current 60 PD @TA = 25°C Power Dissipation 3.8 W PD @TC = 25°C Power Dissipation 70 W Linear Derating Factor 0.47 W/°C VGS Gate-to-Source Voltage ± 20 V IAR Avalanche Current 9.0 A EAR Repetitive Avalanche Energy 7.0 mJ dv/dt Peak Diode Recovery dv/dt 7.4 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

Thermal Resistance

Parameter Typ. Max. Units RθJC Junction-to-Case ––– 2.15 °C/W RθJA Junction-to-Ambient (PCB Mounted,steady-state)** ––– 40 www.irf.com 1,

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 90 mΩ VGS = 10V, ID = 9.0A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 12 ––– ––– S VDS = 50V, ID = 9.0A I Drain-to-Source Leakage Current ––– ––– 25 VDS = 100V, VGS = 0VDSS µA ––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20VIGSS nAGate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Qg Total Gate Charge ––– ––– 37 ID = 9.0A Qgs Gate-to-Source Charge ––– ––– 7.2 nC VDS = 80V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 11 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 9.2 ––– VDD = 50V tr Rise Time ––– 22 ––– ID = 9.0Ans td(off) Turn-Off Delay Time ––– 35 ––– RG = 12Ω tf Fall Time ––– 25 ––– VGS = 10V, See Fig. 10 Between lead, D LD Internal Drain Inductance ––– ––– 6mm (0.25in.) nH from package G LS Internal Source Inductance ––– ––– and center of die contact S Ciss Input Capacitance ––– 920 ––– VGS = 0V Coss Output Capacitance ––– 130 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 19 ––– pF ƒ = 1.0MHz, See Fig. 5 EAS Single Pulse Avalanche Energy ––– 340 93 mJ IAS = 9.0A, L = 2.3mH

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol

D

––– ––– 17 (Body Diode) showing the ISM Pulsed Source Current integral reverse G ––– ––– 60 (Body Diode) p-n junction diode. S VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 9.0A, VGS = 0V trr Reverse Recovery Time ––– 93 140 ns TJ = 25°C, IF = 9.0A Qrr Reverse Recovery Charge ––– 320 480 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by This is a typical value at device destruction and represents max. junction temperature. (See fig. 11) operation outside rated limits. Starting TJ = 25°C, L = 2.3mH This is a calculated value limited to TJ = 175°C . RG = 25Ω, IAS = 9.0A, VGS=10V (See Figure 12) Uses IRF530N data and test conditions. ISD ≤9.0Adi/d ≤410A/µs, VDD≤V(BR)DSS, **When mounted on 1" square PCB (FR-4 or G-10 Material). For TJ ≤ 175°C recommended footprint and soldering techniques refer to Pulse width ≤ 400µs; duty cycle ≤ 2%. application note #AN-994 2 www.irf.com, 100 100 VGS VGS TOP 15V TOP 15V 10V 10V 8.0V 8.0V 7.0V 7.0V 6.0V 6.0V 5.5V 5.5V 5.0V 5.0V BOTTOM 4.5V BOTTOM 4.5V 4.5V 10 4.5V 10 20µs PULSE WIDTH 20µs PULSE WIDTH TJ = 25 °CTJ= 175 °C110.1 1 10 100 0.1 1 10 100 VD S , Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 3.5 ID = 15A 3.0 TJ = 25 ° C 2.5 TJ = 175 ° C 2.0 1.5 1.0 0.5VDS= 50V 20µs PULSE WIDTH VGS= 10V 10 0.0 4.0 5.0 6.0 7.0 8.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 VG S , Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature

www.irf.com3ID, Drain-to-Source Current (A) I D , Drain-to-Source Current (A) RDS( o n ) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A), 1600 20 VGS = 0V, f = 1MHz ID = 9.0A Ciss = Cgs + Cgd , Cd s SHORTED C = C VDS = 80Vrss gd C = C V = 50Voss ds + Cgd 16 DSVDS = 20V1200 Ciss Coss 8 Crss FOR TEST CIRCUIT SEE FIGURE1300110 100 0 10 20 30 40VDS, Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage

100 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 175 ° C 100 10 100µsec 1 1msec TJ = 25 ° C Tc = 25°C Tj = 175°C 10msecVGS= 0 V Single Pulse 0.1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 1000 VS D ,Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage

4 www.irf.com C, Capacitance (pF) IS D , Reverse Drain Current (A) ID, Drain-to-Source Current (A) VG S , Gate-to-Source Voltage (V), + - ≤ 1 ≤ 0.1 %

VDS

90% 25 50 75 100 125 150 175TC, Case Temperature ( ° C) 10%

V Fig 9. Maximum Drain Current Vs. GS

tttt

Case Temperature d(on) r d(off) f

D = 0.50 0.20 0.10 0.05 PDM 0.1 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. PeakTJ=P DMxZthJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5

Thermal Response (ZthJC) I D , Drain Current (A)

, 15V ID TOP 3.7A 6.4A DRIVER BOTTOM 9.0A V LDS RG D.U.T + 120 - VDD IAS A 2V0GVS tp 0.01Ω

V(BR)DSS

tp 25 50 75 100 125 150 175

Starting TJ , Junction Temperature ( ° C)

! " #$

IAS

Current Regulator Same Type as D.U.T. 50KΩ 12V .2µF QG .3µF + V D.U.T. - DS QGS QGD

VGS

VG 3mA IG ID Charge Current Sampling Resistors 6 www.irf.com

EA S , Single Pulse Avalanche Energy (mJ)

, + $"" % $#" "# % • %&' • () • %&%*+ $ #,- - + - - + • + • - • !"# %#)" , ,)!$. Driver Gate Drive Period D = P.W. P.W. Period

VGS=10V

D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt

VDD

Re-Applied Voltage Body Diode Forward Drop Inductor Curent Ripple ≤ 5% &ISD' %%% / ,%+"%0 ""#

For N-channelHEXFET® power MOSFETs

www.irf.com 7, THIS IS AN IRF530S WITH PART NUMBER LOT CODE 8024 INTERNATIONAL ASSEMBLED ON WW 02, 2000 RECTIFIER F530S IN THE ASSEMBLY LINE "L" LOGO DATE CODE ASSEMBLY YEAR 0 = 2000 LOT CODE WEEK 02 LINEL8www.irf.com,

TO-262 Package Outline IGBT

1- GATE 2- COLLECTOR 3- EMITTER 4- COLLECTOR

TO-262 Part Marking Information

EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 PART NUMBER

INTERNATIONAL

ASSEMBLED ON WW 19, 1997 RECTIFIER IN THE ASSEMBLY LINE "C" LOGO DATE CODE ASSEMB YEAR 7 = 1997LY LOT CODE WEEK 19 LINE C www.irf.com 9,

TRR

1.60 (.063) 1.50 (.059) 1.60 (.063) 4.10 (.161) 1.50 (.059) 3.90 (.153) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 11.60 (.457) 1.65 (.065) 11.40 (.449) 15.42 (.609) 24.30 (.957) 15.22 (.601) 23.90 (.941)

TRL

1.75 (.069) 10.90 (.429) 1.25 (.049) 10.70 (.421) 4.72 (.136) 16.10 (.634) 4.52 (.178) 15.90 (.626) FEED DIRECTION 13.50 (.532) 27.40 (1.079) 12.80 (.504) 23.90 (.941) 330.00 60.00 (2.362) (14.173) MIN. MAX. 30.40 (1.197) NOTES : MAX. 1. COMFORMS TO EIA-418. 26.40 (1.039) 4 2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961) 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 3

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/02

10 www.irf.com]
15

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