Download: NEW PRODUCTS applications where the 7.5 A rating of the BT151 is not

NEW PRODUCTS applications where the 7.5 A rating of the BT151 is not required (Types: BT300-500R, BT300-600R, BT300-800R). Philips Semiconductors are working intensively on NEW5ARATED, LOGIC LEVEL THYRISTOR bringing new products to the market to meet the requirements of existing and new developing applications The BT258 series is a range of5Arated, sensitive gate areas. These are the new products and technologies that thyristors available in 500 V, 600 V and 800 V grades. appear for the first time in this data handbook. The BT258 may be interfaced directly to microcontrollers, logic integrated...
Author: Abefor Shared: 8/19/19
Downloads: 843 Views: 2536

Content

NEW PRODUCTS applications where the 7.5 A rating of the BT151 is not

required (Types: BT300-500R, BT300-600R, BT300-800R). Philips Semiconductors are working intensively on NEW5ARATED, LOGIC LEVEL THYRISTOR bringing new products to the market to meet the requirements of existing and new developing applications The BT258 series is a range of5Arated, sensitive gate areas. These are the new products and technologies that thyristors available in 500 V, 600 V and 800 V grades. appear for the first time in this data handbook. The BT258 may be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger HIGH COMMUTATION TRIACS circuits. This device is particularly suitable for Philips range of high commutation triacs now include two microprocessor controlled domestic appliances and low new devices rated at8Aand 25 A. These devices have power consumer products. (Types: BT258-500R, high off-state dV/dt and commutation capability, and are BT258-600R, BT258-800R) ideal for use in motor control circuits and other inductive ADDITIONAL VOLTAGE GRADES FOR BT150 switching applications. (Types: BTA208, BTA225). Up to now, the BT150 has only been available in the 500 V ISOLATED THYRISTORS AND TRIACS grade. Additional voltage grades of 600 V and 800 V are The Industry Standard - BT151 thyristor plus a wide range now available. (Types: BT150-600R, BT150-800R) of standard and high-commutation triacs are now available in the SOT186A isolated package, featuring UNENCAPSULATED, PASSIVATED, SILICON POWER CHIPS isolation voltage up to 2500 Vrms. The SOT186A All the devices in this data handbook are available as package allows two or more power devices to share a unencapsulated dice complete with passivation and common heatsink, without the need for insulating bushes metallised contact pads, but without bond wires or any and spacers, or alternatively allows the heatsink to be other connections or encapsulation. Contact your grounded. (Types: BT151X, BT136X, BT137X, BT138X, Regional or National Sales Office for details. BT139X, BTA208X, BTA212X, BTA216X).

APPLICATIONS

SURFACE MOUNTING BT169 The popular BT169D, sensitive gate thyristor, used in a wide variety of consumer applications is now available in For further information on applications which use a SOT223 envelope, suitable for surface mounting (Type: thyristors and triacs, refer to the new handbook "Triacs BT169DW). and thyristors - an application guide" (Order N code: 9397-750-00372).EW5ARATED THYRISTOR The BT300 series is a range of5Arated thyristors with For further information on other power semiconductor similar characteristics to the BT151, available in 500 V, applications, refer to the "Power Semiconductor 600 V and 800 V grades. It is intended for lower power Applications Handbook" (Order code:9398-652-85011).,

PHILIPS THYRISTORS AND TRIACS

glass MT1GPNPP

N

N P The Phase 2 Process MT2 The basic principle of using a PNPN structure to produce Fig.2. Phase 2 structure and Passivation. a thyristor, and a NPNPN structure (with two PNPN’s in antiparallel) to produce a triac has been known for decades. The factors controlling various important In Philips terminology we call these "Phase 1" and parameters, such as blocking voltages, on-state voltage "Phase 2" technologies respectively. drop, trigger current, latching and holding current, off-state dV/dt, triac commutation and surge capability are As can be seen, Phase 1 passivation requires a also well known. simultaneous etching of mesa troughs from both sides followed by the deposition of passivants such as The modern challenge of making good thyristors and negatively charged glass. The advantages of this triacs lies not so much in innovative design concepts as technique are small chip size and fewer processing in perfection of manufacturing technology. stages. No aluminium isolation diffusion or photolith are required, hence the overall chip cost is lower. Philips products are characterised by the use of well established, stable processes in both diffusion and By contrast, the Phase 2 technology requires an assembly, giving devices of high quality and reliability. aluminium isolation diffusion prior to the fabrication of the The strengths and special features of these products are PNPN or NPNPN structure, which has the effect of outlined below. bringing both blocking PN junctions to the top surface. These can then be passivated with trough etching and Except for those designed for specialist applications such glass deposition on the top side only. as GTO’s and ASCR’s, most common thyristors and triacs are specified to have voltage blocking capability in both The main advantage of the Phase 2 technology is a much directions. This means that in the PNPN or NPNPN more mechanically robust structure, due to the fact that structures, two opposing PN junctions need to be the edge of the chip is not reduced in thickness. Minor designed to withstand the rated voltage. damage to the edges does not intrude into the active region. A further advantage is that the flat bottom surface This is normally achieved by starting with a suitably low is compatible with automatic die bonding in assembly. doped N type silicon wafer into which two P regions are diffused simultaneously from opposite sides, resulting in The main disadvantage is increased cost in comparison a symmetric PNP structure where both PN junctions have with the Phase 1 process. high voltage blocking capability. Further N-type diffusions are then put into both sides of the structure, (for a triac). Philips has progressed from Phase 1 to Phase 2 The result is a NPNPN structure with a symmetrical passivation technology, despite its higher cost, because blocking voltage. Both of these blocking PN junctions now of the advantages of mechanical ruggedness and lower need to be passivated at the point where they intersect vulnerability to handling damage. the silicon surface, and there are two common methods for doing this, shown in the diagrams below. It is our belief that Philips thyristors and triacs produced using Phase 2 technology have fewer manufacturing glass MT1 G defects, and are more reliable than devices produced by competitors who are still using the Phase 1 structure. P N Passivation N The use of the Phase 2 passivation structure coupled with the well developed glass mesa passivation technology at P Philips results in devices with high voltage blockingN capability and extremely stable characteristics. The MT2 structure is also less vulnerable to edge damage Fig.1. Phase 1 structure and Passivation. compared to the alternative Phase 1 passivation., The typical off-state breakdown voltage of our thyristors Philips Semiconductors have a wealth of experience of and triacs is in excess of 1000V, with a very tight supplying devices in this form and are able to provide distribution, so much so that we normally consider any expert advice on the subject of mounting, soldering and devices with blocking voltages less than 500V to be attaching bond wires to unpackaged dice. defective.For example, our 200V and400V gradedevices are tested to withstand 500V. Thyristor and Triac Ratings A rating is a value that establishes either a limiting In contrast, competitors using Phase 1 passivation who capability or a limiting condition for an electronic device. deliver true 200V and 400V devices, i.e. devices whose It is determined for specified values of environment and breakdown voltages are just above 200V or 400V, are operation, and may be stated in any suitable terms. likely to suffer from glass cracks or chipped corners which Limiting conditions may be either maxima or minima. can progress to the extent that they cause quality and reliability problems. All limiting values quoted in this data handbook are Absolute Maximum Ratings - limiting values of operating and environmental conditions applicable to any device of a specified type, as defined by its published data. Assembly The absence of troughs and glass on the bottom surface The equipment manufacturer should design so that, of our chips allows us to use automated assembly. We initially and throughout the life of the device, no absolute use die bonding technology which involves scrubbing the maximum value is exceeded with any device, under the chips onto heated leadframes that are precoated with worst probable operating conditions. solder. This technique gives an excellent, void free VOLTAGE RATINGS contact with low thermal resistance and avoids having to subject the chips to long duration, high temperature VDRM, Repetitive peak off-state voltage. The maximum furnacing. Compared to our main competitors, our VRRM allowable instantaneous forward or reverse devices have superior die bonds and lower thermal voltage including transients. The rated values of resistance, which means that they operate at a lower VDRM(max) and VRRM(max) may be applied junction temperature for the same dissipation, and thus continuously over the entire operating junction have higher reliability. temperature range, provided that the thermal resistance between junction and ambient is kept Another feature of this assembly method is that, along low enough to avoid the possibility of thermal with the ultrasonic wire bonding used to connect to the runaway. top of the chip, it gives our devices a high thermal fatigue CURRENT RATINGS capability. Thus they have excellent on-state reliability as well as extremely stable off-state characteristics. IT(AV) Average on-state current. The average rated current is that value which under steady state conditions will result in the rated temperature MT1 MT1 wire G gate wire Tjmax being reached when the mounting base or heatsink is at a given temperature. Graphs of on-state dissipation versus IT(AV) or IT(RMS) arechip back metallisation provided in the data sheets. The right hand scale solder of each graph shows the maximum allowableMT2 mounting base or heatsink temperature for a lead frame given dissipation. MT2 connection

I

Fig.3. Die bonding onto leadframes, wire bonding. T(RMS) RMS on-state current. For a given average current, the power dissipated at small conduction angles is much higher than at large conduction angles. This is a result of the higher rms currents at small conduction angles. Operating the device at rms currents above the Unencapsulated Dice rated value is likely to result in rapid thermal Because of the advantages of the Philips process and cycling of the chip and the bond wires which can assembly techniques outlined above, our family of triacs lead to reliability problems. and thyristors are ideal for use in unencapsulated form, ITSM Non-repetitive peak on-state current. The in applications where space and height are at a premium. maximum allowable peak, on-state surge The glass passivation protects the, otherwise exposed current which may be applied no more than 100 surface regions giving highly stable device times in the life of the device. The data sheet characteristics. The silicon wafers are 100% electrically condition assumes a starting junction tested and are normally supplied sawn, on blue film frame temperature equal to Tjmax, and a sinusoidal carriers. Unsawn wafers can be supplied where surge current at a mains frequency of 50/ 60 Hz. necessary. For a triac, a full sine wave of current is applied., Immediately after the surge, the mains voltage Rth j-a Typical values of junction to ambient thermal is reapplied with a peak value equal to the full resistance are given in the data sheet assuming rated off-state voltage, VDRM. Graphs in the data that the device is mounted vertically on a printed sheet show the variation of ITSM with surge circuit board, in free air. duration. Zth j-mb, Whilst the average junction temperature rise I2t Device fuse rating. For correct circuit protection, Zth j-hs may be found from the thermal resistance figure, the I2t of a protective fuse must be less than the the peak junction temperature requires I2t of the device. In the data sheets, the device knowledge of the current waveform and the rating is numerically equal to I 2TSM /200 and transient thermal impedance. The thermal assumes a 10ms fusing time. impedance curves in the data sheets are based dIT/dt The maximum allowable rate of rise of on-state on rectangular power pulses. The junction current after gate triggering. The theory temperature rise due to a rectangular power underlying this rating is that, where the rate of pulse, is given by multiplying the peak rise of main current is very rapid immediately dissipation during the pulse by the thermal after triggering, local ’hot spot’ heating will occur impedance Zth j-mb for the given pulse width. in a small part of the device active area close to Analysis methods for non-rectangular pulses the gate, leading to device degradation or are covered in the Power Semiconductor complete failure. In practise, true dIT/dt failures Applications handbook. of this kind are very rare. The only conditions Tjmax The maximum operating junction temperature wheredIT/dt has been observed to cause failures range for all our thyristors and triacs is 125˚C. is in triacs operated in the T2-, G+ quadrant This applies in either the on-state or off-state, where a combination of high dIT/dt and high peak and for either half cycle or full cycle conduction. current (in excess of the data sheet ratings), can It is permissible for the junction temperature to cause damage to the gate structure. For this exceed Tj max for short periods during reason, operation of our triacs in the T2-, G+ non-repetitive surges, but for repetitive quadrant should be avoided wherever possible. operation the peak junction temperature must dIT/dt VBO or dVD/dt triggered. Where a device is remain below Tj max. triggered by exceeding the breakdown voltage, Tstg The limiting storage temperature range for all or by a high rate of rise of off-state voltage, as our thyristors and triacs is -40˚C to 150˚C. opposed to injecting current into the gate, it is necessary to limit the dIT/dt. A note in the data PG(AV), The average and peak gate power dissipation, sheet specifies the maximum allowable dI /dt for PGM, IGM, and the maximum gate voltage and gate current.T this mode of triggering. VGM Exceeding the gate ratings can cause the deviceto degrade gradually, or fail completely. THERMAL RATINGS Rth j-mb Steady state thermal resistances. Junction to Thyristor and Triac Characteristics Rth j-hs mounting base is used for TO220AB envelope. Rth j-sp Junction to heatsink for devices in full pack, A characteristic is an inherent and measurable property R isolated envelopes, SOT186 and SOT186A. of a device. Such a property may be expressed as a valueth j-lead Junction to solder point is used for devices in for stated or recognized conditions. A characteristic may SOT223 surface mounting envelope. Junction also be a set of related values, usually shown in graphical to lead is used for devices in SOT54 (TO92) form. small signal outline. The maximum value of the thermal resistance is given in the data sheet, and STATIC CHARACTERISTICS is used to specify the device rating. The average junction temperature rise for a given dissipation VT On-state voltage. The tabulated value in the data is given by multiplying the average dissipation sheet is the maximum, instantaneous on-state by the thermal resistance. voltage measured under pulse conditions toavoid excessive dissipation, at a junction Note that for triacs, two values of thermal temperature of 25˚C. The data sheet also resistance are quoted; one for half cycle contains a graph showing the maximum and operation and one for full cycle operation. This typical characteristics at 125˚C and the is because only half of the chip carries current maximum characteristic at 25˚C. The maximum in each half cycle allowing the non-conducting characteristic at 125˚C is used to calculate the half to cool down between conduction periods. dissipation for a given average or rms current, The net effect is to reduce the average thermal and hence the graph of on-state dissipation resistance for full cycle conduction. versus average or rms current in the data sheet., The on-state voltage/ current characteristic of a To ensure that a device will not trigger, the gate diode, thyristor or triac may be approximated by voltage must be held below the minimum gate a piecewise linear model as shown in the figure trigger voltage. The data sheet quotes VGT(min) at below; where RS is the slope of the tangent to the maximum junction temperature (125˚C), and the curve at the rated current, and VO is the the maximum off-state voltage (VDRM(max)). voltage axis intercept. The on-state voltage is then VT = VO + IT.RS, and the instantaneous IL Latching current. The latching current is the dissipation is P = V .I 2 value of on-state current required to maintainTOT+ IT .RS. where IT is the instantaneous on-state current. conduction at the instant when the gate currentis removed. A graph in the data sheets shows It can be shown that the average on-state the variation of normalised IL with temperature. dissipation for any current waveform is: To trigger a thyristor or triac, a gate current PT(AV) = VO.I T(AV) + IT(RMS) .RS, where IT(AV) is the greater than the maximum device gate trigger average on-state current and IT(RMS) is the rms current IGT must be applied until the on-state value of the on-state current. Graphs in the current IT rises above the maximum latching published data show on-state dissipation as a current IL. This condition must be met at the function of average current for thyristors and lowest junction temperature. versus rms current for triacs. Sinusoidal current waveforms are assumed and the graphs show IH Holding current. The holding current is the value dissipation over a range of conduction angles of on-state current required to maintainconduction once the device has fully turned on and the gate current has been removed. The IT / A 50 on-state current must have previously exceeded the latching current IL. A graph in the data sheet shows the variation of normalised IH with 40 temperature. To turn off (commutate) a thyristor or triac, the 30 load current must remain below IH for sufficient slope Rs time to allow a return to the off-state. This 20 condition must be met at the highest operating junction temperature (125˚C). 10 ID, IR The maximum off-state leakage current, specified at rated V Vo DRM(max) , VRRM(max) at 125˚C. 0 DYNAMIC CHARACTERISTICS 0 0.5 1.0 1.5 VT / V dVD/dt Critical rate of rise of off-state voltage. Fig.4. Piecewise linear approximation to thyristor and Displacement current caused by a high rate of triac on-state characteristic. rise of off-state voltage can induce a gate currentsufficient to trigger the device. Devices with I Gate trigger current. The data sheet shows the sensitive gates are particularly susceptible toGT typical and maximum gate trigger current at a dVD/dt triggering, and since gate trigger current junction temperature of 25˚C. A graph in the data decreases as junction temperature increases, sheet shows the variation of normalised I with the condition is worse when the device is hot.GT temperature. The data sheet figure is specified at 125˚C usingan exponential waveform and a maximum When designing a triac gate trigger circuit, applied voltage of 67% VDRM(max). The dVD/dt is triggering in the T2-, G+ quadrant should be measured to 63% of the maximum voltage. avoided if possible. The gate trigger current in this quadrant is much higher than in the other To prevent sensitive gate devices from false three quadrants and the device is more triggering due to high rates of rise of off state susceptible to turn-on dIT/dt failure. voltage, 1 kΩ resistor in parallel with a 10nF VGT Gate trigger voltage. The data sheet shows the capacitor may be fitted between gate and typical and maximum gate trigger voltage at a cathode (gate and terminal 1 for a triac). This gate current equal to I , at a junction approach is less effective for standard gateGT temperature of 25˚C. A graph in the data sheet devices. In this case, the preferred option is to shows the variation of normalised V with fit an RC snubber between anode and cathodeGT temperature. (T2 and T1 for a triac) to reduce the dVD/dt belowthe critical value., commutation occurs. The conventional remedy for this Percentage of maximum applied voltage VDM 100% type of commutation failure is to fit a snubber across the device to limit the rate of rise of off-state voltage dVcom/dt. 80% At high values of dIcom/dt, the recombination current dominates and, above a critical value of dIcom/dt, the dVD/dt = average slope between 10% and 63% of VDM 60% device will not commutate even at fairly low values of dVcom/dt. Under these conditions, a snubber will not prevent commutation failure, and the best option is to use 40% a High Commutation Triac. 20% 0% 012345No of time constants HIGH COMMUTATION TRIACS Fig.5. Exponential waveform used for measurement of critical off-state dV /dt. The dV /dt is the average Philips High Commutation Triacs attempt to separate theD D slope between 10% and 63% of the maximum applied two antiparallel thyristor structures to prevent the voltage V . unrecombined charge from the conducting half becomingDM gate current in the other half. This is accomplished by t Gate controlled turn-on time. A typical turn on lateral separation of the top and bottom emitters, moregt time of 2 µs is specified for all our thyristors and extensive emitter and peripheral shorting, and by a triacs. modified gate design which prevents triggering in the T2-,G+ quadrant. tq Circuit commutated turn-off time. A typical turn off time of 70 µs is specified for standard gate The device design, in addition to giving high immunity to thyristors and 100µs for sensitive gate thyristors. commutation failure, also improves the off-state dVD/dt capability. They will commutate the full rated current up TRIAC COMMUTATION to 125˚C without the aid of a snubber and will also A triac is an AC conduction device and may be thought withstand extremely high rates of rise of off-state voltage, of as two thyristors in antiparallel, monolithically in excess of 1000 V/µs. High commutation triacs can integrated onto the same silicon chip. In phase control simplify circuit design by eliminating the need for RC circuits, the triac often has to be triggered into conduction snubbers. Typical applications include; motor starting, part way into each half cycle. This means that at the end where the triac may be required to commutate the starting of each half cycle the on-state current in one direction current; the switching of d.c. operated relay coils where must drop to zero and not resume in the other direction the timeconstant of the coil is much greater than the mains until the device is triggered again. This commutation period and static switching where it is required to turn the turn-off capability is at the heart of triac power control triac off whilst it is carrying an overload current. applications. If the triac were truly two separate thyristors in antiparallel, this requirement would not present any dVcom/dt Critical rate of rise of commutating voltage. For problems. However, as the two are on the same piece of conventional, as opposed to high commutation silicon there is the possibility that the unrecombined triacs, the data sheet conditions specify a charge of one thyristor as it turns off may act as gate junction temperature of 95˚C and a dIcom/dt given current to trigger the other thyristor as the voltage rises by 2.√2.π.f.IT(RMS), where f is the mains frequency in the opposite direction. This phenomenon is called (assumed to be 50Hz). This value is the commutation failure. maximum rate of change of current which occursat the zero crossing for a sine wave current equal There are two components of current which can act as to the rated rms value, IT(RMS). Graphs in the data gate current to cause commutation failure. One of these sheet show the variation of dVcom/dt and with is the displacement current generated by the reapplied junction temperature with dIcom/dt as a dVcom/dt. The other is the recombination current, which is parameter. mainly determined by the rate of fall of commutating current, dI /dt. Both tend to create a lateral volt drop in dIcom/dt Critical rate of change of commutating current.com the emitter of the opposing thyristor which triggers the High Commutation Triacs are intended for use device in the opposite direction to the original current flow. in circuits where high values of both dIcom/dt anddVcom/dt can occur. Commutation capability is At low rates of fall of current, dIcom/dt, the ammount of specified in terms of dIcom/dt, without a snubber unrecombined charge is small and commutation failure and at the highest junction temperature, occurs mainly because of the rate of rise of off-state Tjmax = 125˚C. A graph in the data sheet shows voltage, dVcom/dt. This situation is worst for inductive loads the variation of dIcom/dt with junction where the rate of rise of voltage can be very high when temperature., Operation up to 150˚C backed up by extensive reliability testing has shown that, The maximum operating junction temperature, T of for certain applications, our thyristors and triacs can bejmax Philips thyristors and triacs is 125˚C. Operation above operated reliably at junction temperatures up to 150˚C. Tjmax for long periods, particularly in the off-state, can give rise to reliability problems due to changes in Typical applications where 150˚C operation may be characteristics which occur as a result of mobile charge allowed include:- static switching of resistive loads, power in the glass passivation. switches for domestic appliances and electric heatingapplications where the device is mounted on a high Furthermore, as a thyristor or triac gets hot, it becomes temperature substrate. more susceptible to false gate triggering, off-state dVD/dt triggering, thermal runaway and commutation failure. Extending the upper operating junction temperature to150˚C depends very much on the application. For this However, it has become apparent that some customers reason we recommend that customers wishing to use our have applications which require operation of thyristors thyristors and triacs at 150˚C contact the Field and triacs at higher junction temperatures. Applications Engineer at their Regional or National salesoffice. Recent improvements in Philips glass mesa technology,

QUALITY ensure consistent processing. Monitoring of the product,

processes and the environment takes place during Total Quality Management production. Philips Semiconductors is committed to be a world class, Approval exercises are run to ensure that new processes customer driven, volume supplier and new equipment perform at an acceptable level. of semiconductors. Written, photographic or visual standards are available at To achieve this, we operate a Total the appropriate points in the production processes. TQM Quality Management (TQM) system, based on Continuous Corrective action Improvement and Quality QUALITY ASSURANCE SYSTEM Non-conforming product found in process is investigatedAssurance in all our business and the root causes identified. Changes to product or activities, and Partnerships with process are then introduced to prevent recurrence of the our customers and suppliers. problem. The top priority throughout the company is Continuous Improvement. Quality assurance To focus on this we will: Based on ISO 9000 standards, customer standards suchas Ford TQE. Our factories are certified to ISO 9000. - Work closely with key customers, as our partners. - Monitor progress, using customer-driven data, of Partnerships with customers our product and services. - Benchmark against the best. These include: PPM co-operations, design-inagreements, ship-to-stock, just-in-time, self-qualification Furthermore, all parts of the organisation must always programmes and application support. demonstrate: - The presence of a strong, management-led Partnerships with suppliers improvement structure. In addition to ISO9000 audits and close monitoring of - Commitment and participation in all areas. supplier delivery performance, we operate a Supplier - Measurable progress towards our Quality Excellence Award scheme which requires suppliers and Improvement goals. their sub-suppliers to use statistical process control, Organisation perform gauge studies and use failure mode and effect analysis (FMEA) techniques to identify and correct the An organisation is in place which ensures that personnel root causes of quality and delivery problems. with the necessary organisational freedom and authority can identify and solve quality problems, prevent Product reliability occurrence of product non-conformity and protect the customer from non-conforming product. With the increasing complexity of Original Equipment Manufacturer (OEM) equipment, component reliability Design control must be extremely high. Our research laboratories and A comprehensive design and development procedure is development departments study the failure mechanisms in place which ensures that the requirements of good of semiconductors. Their studies result in design rules design practice are met. and process optimizations for the highest built-in product reliability. Highly accelerated tests are applied in order to Particular emphasis is placed on ensuring that the initial evaluate the product reliability. Rejects from reliability specification is agreed by the Customer and the tests and from customer complaints are submitted to Marketing and Development functions. failure analysis and the results applied to improve the product or process. There are regular formal reviews of design progress to ensure that the initial specification will be met by the Customer responses design. Our quality improvement depends on joint action with our customer. We need our customers inputs and we invite Detailed measurements are made on initial samples to constructive comment on all aspects of our performance. ensure that the initial specification has been met. Please contact your local sales representative. Process control All processes which directly affect quality are carried out Recognition under controlled conditions. Documented work The high quality of our products and services is instructions are available for all production processes and demonstrated by many Quality Awards granted by major the appropriate environmental controls are in place to customers and international organisations. QUALITY IMPROVEMENT

S SH IP ER RT N PA

]
15

Similar documents

Features Description Applications HFA3102Y Die
SEMICONDUCTORHFA3102 August 1994 Dual Long-Tailed Pair Transistor Array Features Description • High Gain-Bandwidth Product (fT) .10GHz The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on • High Power Gain-Bandwidth Product .5GHz Harri
Features Description Ordering Information Applications
SEMICONDUCTORHFA3101 July 1995 Gilbert Cell UHF Transistor Array Features Description • High Gain Bandwidth Product (fT) .10GHz The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Harris bonded wafer UHF-1 SOI • High Power Gain Bandwidth Product .5GHz process, this a
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
GA100TS60U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology VCES = 600V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 VCE(on) typ. = 1.6V kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ an
MITSUBISHI Nch POWER MOSFET
FS7KM-12 FS7KM-12 OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 2.54 ± 0.25 2.54 ± 0.25123wqGATE ¡V w DRAINDSS ... 600VqeSOURCE ¡rDS (ON) (MAX) ... 1.3Ω ¡ID ... 7A e ¡Viso ... 2000V TO-220FN APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, F
Small Signal FET
Small Signal FET ■ 2SK type (Junction type) Absolute maximum ratings Electrical characteristics Part number Package (TA = 25 °C) (TA = 25 °C) Applications VGDO (V) ID (mA) PT (mW) |Yfs1| (ms) IDSS (mA) 2SK104 TO-92 30 20 250 2.5 TYP. 2.5 TYP. HF amplification 2SK105 TO-92 50 20 250 2.1 2.5 AF amplif
MOTOROLA SEMICONDUCTOR TECHNICAL DATA GENERAL 500 mW DO-35 Glass DATA Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN 500 mW THIS GROUP DO-35 GLASS
MOTOROLA SEMICONDUCTOR TECHNICAL DATA GENERAL 500 mW DO-35 Glass DATA Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN 500 mW THIS GROUP DO-35 GLASS 500 Milliwatt Hermetically Sealed GLASS ZENER DIODES500 MILLIWATTS Glass Silicon Zener Diodes 1.8–200 VOLTS Specification Featur
SEMICONDUCTOR GENERAL 225 mW SOT-23 DATA Zener Voltage Regulator Diodes Zener Voltage Regulator Diodes
MOTOROLA SEMICONDUCTOR TECHNICAL DATA GENERAL 225 mW SOT-23 DATA Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN 225 mW THIS GROUP SOT-23 Zener Voltage Regulator Diodes31Cathode Anode Manufacturing Locations: WAFER FAB: Phoenix, Arizona ASSEMBLY: Seremban, Malaysia TEST: Sere
SEMICONDUCTOR Temperature-Compensated 1N821,A 1N823,A Zener Reference Diodes 1N825,A 1N827,A1N829,A
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Temperature-Compensated 1N821,A 1N823,A Zener Reference Diodes 1N825,A 1N827,A1N829,A Temperature-compensated zener reference diodes utilizing a single chip oxide passi- vated junction for long-term voltage stability. A rugged, glass-enclosed, hermetically seale
MOTOROLA SEMICONDUCTOR TECHNICAL DATA
MOTOROLA SEMICONDUCTOR TECHNICAL DATA % $ # ADDITIONAL VOLTAGES AVAILABLE ! Motorola Preferred Device !"# # $ !""! ! !## SOT-23 DUAL ZENER OVERVOLTAGE This dual monolithic silicon zener diode is designed for applications requiring transient TRANSIENT SUPPRESSOR overvoltage protection capability. It
SEMICONDUCTOR P6KE6.8A Zener Transient Voltage Suppressors through Undirectional and Bidirectional P6KE200A
MOTOROLA SEMICONDUCTOR TECHNICAL DATA P6KE6.8A Zener Transient Voltage Suppressors through Undirectional and Bidirectional P6KE200A The P6KE6.8A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge c
Order this document SEMICONDUCTOR TECHNICAL DATA by P4SMA16AT3/D
Order this document SEMICONDUCTOR TECHNICAL DATA by P4SMA16AT3/D -*# !" (-', * '+%"', (&, $" -))*"++(*+ Specification Features: • Nominal Breakdown Voltage Range – 16 V PLASTIC SURFACE MOUNT • Peak Power – 400 Watts @ 1ms ESD OVERVOLTAGE • 16KV ESD IMMUNITY (Class 3 per Human Body Model) TRANSIENT S
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet $! $# ! " "# % Three complete series of Zener Diodes are offered in the convenient, surface mount plastic SOD-123 package. These devices provide a convenient alternative to the leadless 34 package style. *Motorola Preferred Device Serie
Order this document SEMICONDUCTOR TECHNICAL DATA by MMQA/D Transient Voltage Suppressor for ESD Protection SC-59 QUADTRANSIENT VOLTAGE
Order this document SEMICONDUCTOR TECHNICAL DATA by MMQA/D Motorola Preferred Devices Transient Voltage Suppressor for ESD Protection SC-59 QUADTRANSIENT VOLTAGE This quad monolithic silicon voltage suppressor is designed for applications SUPPRESSOR 24 WATTS PEAK POWER requiring transient overvoltag
Order this document SEMICONDUCTOR TECHNICAL DATA by MMQA5V6T1/D Transient Voltage Suppressor SC-59 QUAD for ESD Protection TRANSIENT VOLTAGE
Order this document SEMICONDUCTOR TECHNICAL DATA by MMQA5V6T1/D Motorola Preferred Devices Transient Voltage Suppressor SC-59 QUAD for ESD Protection TRANSIENT VOLTAGE SUPPRESSOR This quad monolithic silicon voltage suppressor is designed for applications 5.6 VOLTS (4) requiring transient overvoltag
Order this document
Order this document SEMICONDUCTOR TECHNICAL DATA by MMBZ5V6ALT1/D "% & "!"% " "! !" !#$ Transient Voltage Suppressors Motorola Preferred Devices for ESD Protection These dual monolithic silicon zener diodes are designed for applications SOT–23 COMMON ANODE DUAL requiring transient overvoltage protec
SEMICONDUCTOR GENERAL 500 mW DO-35 Glass DATA Zener Voltage Regulator Diodes 500 Milliwatt Hermetically Sealed GLASS ZENER DIODES500 MILLIWATTS Glass Silicon Zener Diodes 1.8–200 VOLTS
MOTOROLA SEMICONDUCTOR TECHNICAL DATA GENERAL 500 mW DO-35 Glass DATA Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN 500 mW THIS GROUP DO-35 GLASS 500 Milliwatt Hermetically Sealed GLASS ZENER DIODES500 MILLIWATTS Glass Silicon Zener Diodes 1.8–200 VOLTS Specification Featur
MOTOROLA SEMICONDUCTOR TECHNICAL DATA GENERAL 1 to 3 Watt DO-41 Surmetic 30 DATA Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN 1–3 WATT
MOTOROLA SEMICONDUCTOR TECHNICAL DATA GENERAL 1 to 3 Watt DO-41 Surmetic 30 DATA Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN 1–3 WATT THIS GROUP DO-41 1 to 3 Watt Surmetic 30 SURMETIC 30 Silicon Zener Diodes 1 TO 3 WATT .a complete series of 1 to 3 Watt Zener Diodes with
MOTOROLA SEMICONDUCTOR TECHNICAL DATA GENERAL 1–1.3 Watt DO-41 Glass DATA Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN 1–1.3 WATT
MOTOROLA SEMICONDUCTOR TECHNICAL DATA GENERAL 1–1.3 Watt DO-41 Glass DATA Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN 1–1.3 WATT THIS GROUP DO-41 GLASS One Watt Hermetically Sealed Glass Silicon Zener Diodes 1 WATTZENER REGULATOR DIODES Specification Features: 3.3–100 VOL
MOTOROLA SEMICONDUCTOR TECHNICAL DATA
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Field-effect current regulator diodes are circuit elements that provide a current essentially independent of voltage. These diodes are especially designed for maximum impedance over the operating range. These devices may be used in parallel to obtain higher curr
TRANSIENT VOLTAGE SUPPRESSORS General Instruments CROSS REFERENCE OPTOELECTRONIC AND SIGNAL PRODUCTS DIVISION
CR103/D REV 1 TRANSIENT VOLTAGE SUPPRESSORS General Instruments CROSS REFERENCE OPTOELECTRONIC AND SIGNAL PRODUCTS DIVISION Transient Voltage Suppressors General Instruments CROSS REFERENCE GI Part Description: 1.5KA series GI Part Description: 1.5KE series (continued) GI Part Description: 1N6267A s
SEMICONDUCTOR 3 Watt Plastic Surface Mount 1SMB5913BT3 Silicon Zener Diodes through 1SMB5956BT3
MOTOROLA SEMICONDUCTOR TECHNICAL DATA 3 Watt Plastic Surface Mount 1SMB5913BT3 Silicon Zener Diodes through 1SMB5956BT3 This complete new line of 3 Watt Zener Diodes offers the following advantages. Specification Features: • A Complete Voltage Range — 3.3 to 200 Volts • Flat Handling Surface for Acc
Order this document SEMICONDUCTOR TECHNICAL DATA by 1SMA5913BT3/D !
Order this document SEMICONDUCTOR TECHNICAL DATA by 1SMA5913BT3/D !" !! ! " "! This complete new line of 1.5 Watt Zener Diodes offers the following PLASTIC SURFACE advantages. MOUNT ZENER DIODES Specification Features: 1.5 WATTS • Voltage Range – 3.3 to 68 V 3.3–68 VOLTS • ESD Rating of Class 3 (>1
Order this document SEMICONDUCTOR TECHNICAL DATA by 1SMA5.0AT3/D
Order this document SEMICONDUCTOR TECHNICAL DATA by 1SMA5.0AT3/D Specification Features: • Reverse Stand–Off Voltage Range: 5.0–78 V • Peak Power — 400 Watts @ 1.0 ms PLASTIC SURFACE MOUNT • ESD Rating of Class 3 (>16 kV) per Human Body Model ZENER OVERVOLTAGE • Pico Seconds Response Time (0 V to BV
Order this document SEMICONDUCTOR TECHNICAL DATA by 1SMA10CAT3/D
Order this document SEMICONDUCTOR TECHNICAL DATA by 1SMA10CAT3/D Specification Features: • Reverse Stand–Off Voltage Range: 10–78 V • Bidirectional Operation PLASTIC SURFACE MOUNT • Peak Power — 400 Watts @ 1.0 ms BIDIRECTIONAL ZENER OVERVOLTAGE • ESD Rating of Class 3 (>16 kV) per Human Body Model
Order this document SEMICONDUCTOR TECHNICAL DATA by 1PMT5913BT3/D %#
Order this document SEMICONDUCTOR TECHNICAL DATA by 1PMT5913BT3/D %#"& %% $% &# "&!% "! !# "$ "'# % This complete new line of zener/tvs diodes offers a 2.5 watt series in a micro PLASTIC SURFACE MOUNT miniature, space saving surface mount package. The Powermite zener/tvs ZENER DIODES diodes are desi
SEMICONDUCTOR 5 Watt Surmetic 40 1N5333B Silicon Zener Diodes through 1N5388B
MOTOROLA SEMICONDUCTOR TECHNICAL DATA 5 Watt Surmetic 40 1N5333B Silicon Zener Diodes through 1N5388B This is a complete series of 5 Watt Zener Diodes with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide-passivated junctions. All this is in a
MOTOROLA SEMICONDUCTOR TECHNICAL DATA
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Field-effect current regulator diodes are circuit elements that provide a current essentially independent of voltage. These diodes are especially designed for maximum impedance over the operating range. These devices may be used in parallel to obtain higher curr
Order this document  POWERTAP II Package
Order this document SEMICONDUCTOR TECHNICAL DATA by XBRP40045CTL/D POWERTAP II Package .employing the Schottky Barrier principle in a large area metal–to–silicon SCHOTTKY BARRIER power diode. State–of–the–art geometry features epitaxial construction with RECTIFIER oxide passivation and metal overla
Order this document  POWERTAP II Package
Order this document SEMICONDUCTOR TECHNICAL DATA by XBRP400100CTL/D POWERTAP II Package .employing the Schottky Barrier principle in a large area metal–to–silicon SCHOTTKY BARRIER power diode. State–of–the–art geometry features epitaxial construction with RECTIFIER oxide passivation and metal overl
Features Package Applications
SEMICONDUCTORRURU50120 April 1995 50A, 1200V Ultrafast Diode Features Package • Ultrafast with Soft Recovery .< 125ns SINGLE LEAD JEDEC STYLE TO-218 • Operating Temperature ..+175oC ANODE • Reverse Voltage .1200V CATHODE • Avalanche Energy Rated (FLANGE) • Planar Construction Applications • Switchin