Download: Features Description Applications HFA3102Y Die

SEMICONDUCTORHFA3102 August 1994 Dual Long-Tailed Pair Transistor Array Features Description • High Gain-Bandwidth Product (fT) .10GHz The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on • High Power Gain-Bandwidth Product .5GHz Harris bonded wafer UHF-1 SOI process, this array achieves • High Current Gain (hFE) .70 very high fT (10GHz) while maintaining excellent hFE and V matching characteristics over temperature. Collector • Noise Figure (Transistor) .3.5dB BEleakage currents are maintained to under 0.01nA. • Low Collector Le...
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SEMICONDUCTORHFA3102 August 1994 Dual Long-Tailed Pair Transistor Array

Features Description

• High Gain-Bandwidth Product (fT) .10GHz The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on • High Power Gain-Bandwidth Product .5GHz Harris bonded wafer UHF-1 SOI process, this array achieves • High Current Gain (hFE) .70 very high fT (10GHz) while maintaining excellent hFE and V matching characteristics over temperature. Collector • Noise Figure (Transistor) .3.5dB BEleakage currents are maintained to under 0.01nA. • Low Collector Leakage Current .<0.01nA • Excellent hFE and VBE Matching Ordering Information • Pin-to-Pin to UPA102G PART NUMBER PRODUCT DESCRIPTION

Applications HFA3102Y Die

• Single Balanced Mixers HFA3102B 14 Lead Plastic SOIC (N) • Wide Band Amplification Stages HFA3102B96 14 Lead Plastic SOIC (N) - Tape and Reel • Differential Amplifiers • Multipliers • Automatic Gain Control Circuits • Frequency Doublers, Tripplers • Oscillators • Constant Current Sources • Wireless Communication Systems • Radio and Satellite Communications • Fiber Optic Signal Processing • High Performance Instrumentation

Pinout/Functional Diagram

HFA3102 TOP VIEW 14 13 12 11 1098Q6 Q1 Q2 Q4 Q5 Q31234567CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures. File Number 3635.1 Copyright © Harris Corporation 1995 9-38,

Specifications HFA3102 Absolute Maximum Ratings Thermal Information

VCEO Collector to Emitter Voltage .8.0V Thermal Resistance θJA VCBO Collector to Base Voltage .12.0V Plastic SOIC Package .125 oC/W VEBO Emitterr to Base Voltage .12.0V Maximum Package Power Dissipation at +75 oC IC, Collector Current .30mA Any One Transistor .0.25W TSTG, Storage Temperature Range .-65 oC to +150oC Plastic SOIC Package .0.6W Operating Temperature Range.-40oC to +85°oC Derating Factor Above +75oC TJ, Junction Temperature (Die) .+175 oC Plastic SOIC Package..8mW/oC TJ, Junction Temperature (Plastic Package) .+150 oC Lead Temperature (Soldering 10s) .+300°oC (Lead Tips Only) CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Electrical Specifications at +25oC

ALL GRADES

TEST

SYMBOLS PARAMETER TEST CONDITIONS LEVEL MIN TYP MAX UNITS V(BR)CBO Collector-to-Base Breakdown Voltage IC = 100µA, IE = 0 A 12 18 - V (Q1, Q2, Q4, and Q5) V(BR)CEO Collector-to-Emitter Breakdown IC = 100µA, IB = 0A812 - V Voltage (Q1 thru Q6) V(BR)EBO Emitter-to-Base Breakdown Voltage IE = 50µA, IC = 0 A 5.5 6 - V (Q3 and Q6) ICBO Collector Cutoff Current VCB = 5V, IE = 0 A - 0.1 10 nA (Q1, Q2, Q4, and Q5) IEBO Emitter Cutoff Current (Q3 and Q6) VEB = 1V, IC = 0 A - - 100 nA hFE DC Current Gain (Q1 thru Q6) IC = 10mA, VCE = 3VA40 70 - - CCB Collector-to-Base Capacitance VCB = 5V, f = 1MHz B - 300 - fF CEB Emitter-to-Base Capacitance VEB = 0, f = 1MHz B - 200 - fF fT Current Gain-Bandwidth Product IC = 10mA, VCE = 5V C - 10 - GHz fMAX Power Gain-Bandwidth Product IC = 10mA, VCE = 5V C - 5 - GHz GNFMIN Available Gain at Minimum Noise IC = 3mA, VCE = 3 C - - - - Figure f = 0.5GHz - - 17.5 - dB f = 1.0GHz - - 12.4 - - NFMIN Minimum Noise Figure IC = 3mA, VCE = 3V C - - - - f = 0.5GHz - - 1.8 - dB f = 1.0GHz - - 2.1 - - NF50Ω 50Ω Noise Figure IC = 3mA, VCE = 3V C - - - - f = 0.5GHz - - 3.3 - dB f = 1.0GHz - - 3.5 - - hFE1/hFE2 DC Current Gain Matching VCE = 3V, IC = 10mA A 0.9 1.0 1.1 - (Q1 and Q2, Q4 and Q5) VOS Input Offset Voltage (Q1 and Q2), IC = 10mA, VCE = 3V A - 1.5 5 mV (Q4 and Q5) IOS Input Offset Current (Q1 and Q2), IC = 10mA, VCE = 3V A - 5 25 µA (Q4 and Q5) dVOS/dT Input Offset Voltage TC IC = 10mA, VCE = 3V C - 0.5 - µV/oC (Q1 and Q2, Q4 and Q5) ITRENCH- Collector-to-Collector Leakage ∆VTEST = 5V B - 0.01 - nA LEAKAGE (Pin 6, 7, 13, and 14) Test Level: A. Production Tested B. Guaranteed Limit or Typical Based on Characterization C. Design Typical for Information Only 9-39,

Performance Curves

x 103 12.0 140.0 IB = 150µ 120.0 10.0 IB = 120µ 100.0 8.0 IB = 90µ 80.0 6.0 IB = 60µ 60.0 4.0 40.0 IB = 30µ 2.0 20.0 0.0 0.0 0.0 1.0 2.0 3.0 4.0 5.0 10-10 10-8 10-6 10-4 10-2 100 VCE (V) IC (A) FIGURE 1. IC vs VCE FIGURE 2. hFE vs IC VCE = 3 VCE = 5V 100 12.0 10-2 10.0 10-4 8.0 10-6 6.0 10-8 4.0 10-10 2.0 10-12 0.0 0.40 0.60 0.80 1.0 10-4 10-3 10-2 10-1 VBE (V) IC (A) FIGURE 3. GUMMEL PLOT FIGURE 4. fT vs IC 4.8 20.0 18.0 3RD ORDER INTERCEPT POINT4.6 20 1dB COMPRESSION POINT 4.4 16.0 4.2 14.0 4.0 12.0 -20 VCE = 5 V 3.8 10.0 -40 IC = 10mA 3.6 8.0 -60 FREQ = 1GHz 3.4 6.0 -80 3RD ORDER PRODUCTS 3.2 2.0 -100 0.0 0.50 1.0 1.5 2.0 2.5 3.0 -30 -20 -10 0 10 P , INPUT POWER (dBm) FREQUENCY (GHz) IN FIGURE 5. GAIN AND NOISE FIGURE vs FREQUENCY FIGURE 6. P1dB AND 3RD ORDER INTERCEPT 9-40 NOISE FIGURE (dB) IC AND I (A) IC (A)B |S21| (dB) f (Hz) hFE POUT, OUTPUT POWER (dBM)

T

,

PSPICE Model for a Single Transistor

+ ( IS= 1.840E-16 XTI= 3.000E+00 EG= 1.110E+00 VAF= 7.200E+01 + VAR= 4.500E+00 BF= 1.036E+02 ISE= 1.686E-19 NE= 1.400E+00 + IKF= 5.400E-02 XTB= 0.000E+00 BR= 1.000E+01 ISC= 1.605E-14 + NC= 1.800E+00 IKR= 5.400E-02 RC= 1.140E+01 CJC= 3.980E-13 + MJC= 2.400E-01 VJC= 9.700E-01 FC= 5.000E-01 CJE= 2.400E-13 + MJE= 5.100E-01 VJE= 8.690E-01 TR= 4.000E-09 TF= 10.51E-12 + ITF= 3.500E-02 XTF= 2.300E+00 VTF= 3.500E+00 PTF= 0.000E+00 + XCJC= 9.000E-01 CJS= 1.689E-13 VJS= 9.982E-01 MJS= 0.000E+00 + RE= 1.848E+00 RB= 5.007E+01 RBM= 1.974E+00 KF= 0.000E+00 + AF= 1.000E+00) 9-41,

Common Emitter S-Parameters

VCE = 5V and IC = 5mA FREQ. (Hz) |S11| PHASE(S11) |S12| PHASE(S12) |S21| PHASE(S21) |S22| PHASE(S22) 1.0E+08 0.833079 -11.7873 1.418901E-02 78.8805 11.0722 168.576 0.976833 -11.0509 2.0E+08 0.791776 -22.8290 2.695740E-02 68.6355 10.5177 157.897 0.930993 -21.3586 3.0E+08 0.734911 -32.6450 3.750029E-02 59.5861 9.75379 148.443 0.868128 -30.4451 4.0E+08 0.672811 -41.0871 4.572138E-02 51.9018 8.91866 140.361 0.799886 -38.1641 5.0E+08 0.612401 -48.2370 5.194147E-02 45.5043 8.10511 133.569 0.734033 -44.5998 6.0E+08 0.557126 -54.2780 5.659943E-02 40.2112 7.35944 127.882 0.674392 -49.9370 7.0E+08 0.508133 -59.4102 6.009507E-02 35.8226 6.69712 123.102 0.622181 -54.3777 8.0E+08 0.465361 -63.8123 6.274213E-02 32.1594 6.11750 119.047 0.577269 -58.1022 9.0E+08 0.428238 -67.6313 6.477134E-02 29.0743 5.61303 115.571 0.538952 -61.2587 1.0E+09 0.396034 -70.9834 6.634791E-02 26.4506 5.17405 112.556 0.506365 -63.9647 1.1E+09 0.368032 -73.9591 6.758932E-02 24.1974 4.79104 109.913 0.478663 -66.3116 1.2E+09 0.343589 -76.6285 6.857937E-02 22.2441 4.45546 107.570 0.455091 -68.3702 1.3E+09 0.322155 -79.0462 6.937837E-02 20.5358 4.15997 105.472 0.435008 -70.1958 1.4E+09 0.303268 -81.2548 7.003020E-02 19.0293 3.89845 103.576 0.417872 -71.8314 1.5E+09 0.286542 -83.2880 7.056718E-02 17.6908 3.66577 101.849 0.403238 -73.3108 1.6E+09 0.271660 -85.1723 7.101343E-02 16.4930 3.45770 100.262 0.390735 -74.6609 1.7E+09 0.258359 -86.9292 7.138717E-02 15.4143 3.27074 98.7956 0.380056 -75.9030 1.8E+09 0.246420 -88.5759 7.170231E-02 14.4370 3.10197 97.4307 0.370947 -77.0544 1.9E+09 0.235659 -90.1265 7.196964E-02 13.5469 2.94897 96.1533 0.363195 -78.1288 2.0E+09 0.225923 -91.5925 7.219757E-02 12.7319 2.80969 94.9515 0.356623 -79.1377 2.1E+09 0.217085 -92.9836 7.239274E-02 11.9824 2.68243 93.8156 0.351081 -80.0903 2.2E+09 0.209034 -94.3076 7.256046E-02 11.2901 2.56573 92.7373 0.346442 -80.9942 2.3E+09 0.201678 -95.5713 7.270498E-02 10.6480 2.45837 91.7097 0.342599 -81.8557 2.4E+09 0.194939 -96.7803 7.282977E-02 10.0503 2.35928 90.7271 0.339458 -82.6802 2.5E+09 0.188747 -97.9395 7.293764E-02 9.49212 2.26756 89.7844 0.336942 -83.4719 2.6E+09 0.183044 -99.0530 7.303093E-02 8.96908 2.18243 88.8775 0.334982 -84.2347 2.7E+09 0.177780 -100.124 7.311157E-02 8.47753 2.10322 88.0026 0.333518 -84.9716 2.8E+09 0.172909 -101.156 7.318117E-02 8.01430 2.02934 87.1565 0.332499 -85.6853 2.9E+09 0.168394 -102.152 7.324107E-02 7.57661 1.96027 86.3366 0.331879 -86.3781 3.0E+09 0.164200 -103.114 7.329243E-02 7.16204 1.89556 85.5404 0.331620 -87.0518 VCE = 5V and IC = 10mA FREQ. (Hz) |S11| PHASE(S11) |S12| PHASE(S12) |S21| PHASE(S21) |S22| PHASE(S22) 1.0E+08 0.728106 -16.4319 1.273920E-02 75.4177 15.1273 165.227 0.959692 -14.2688 2.0E+08 0.670836 -31.2669 2.342300E-02 62.8941 13.9061 152.045 0.886232 -26.9507 3.0E+08 0.600268 -43.7663 3.132521E-02 52.5891 12.3970 141.185 0.796016 -37.3172 4.0E+08 0.531768 -54.0028 3.681579E-02 44.5019 10.9257 132.570 0.708892 -45.4503 5.0E+08 0.471795 -62.3880 4.057046E-02 38.2308 9.62995 125.781 0.633146 -51.7704 6.0E+08 0.421506 -69.3569 4.316292E-02 33.3405 8.53559 120.378 0.570209 -56.7206 7.0E+08 0.379961 -75.2612 4.499071E-02 29.4764 7.62375 116.005 0.518803 -60.6598 8.0E+08 0.345693 -80.3608 4.631140E-02 26.3755 6.86423 112.398 0.476987 -63.8540 9.0E+08 0.317301 -84.8420 4.728948E-02 23.8481 6.22797 109.365 0.442915 -66.4948 1.0E+09 0.293608 -88.8381 4.803091E-02 21.7581 5.69057 106.771 0.415044 -68.7193 1.1E+09 0.273680 -92.4452 4.860515E-02 20.0070 5.23257 104.518 0.392146 -70.6269 1.2E+09 0.256782 -95.7336 4.905871E-02 18.5224 4.83873 102.532 0.373261 -72.2899 1.3E+09 0.242344 -98.7555 4.942344E-02 17.2505 4.49716 100.759 0.357640 -73.7620 1.4E+09 0.229918 -101.551 4.972158E-02 16.1506 4.19854 99.1602 0.344698 -75.0832 1.5E+09 0.219152 -104.150 4.996903E-02 15.1915 3.93554 97.7028 0.333974 -76.2840 1.6E+09 0.209767 -106.577 5.017730E-02 14.3490 3.70234 96.3629 0.325102 -77.3877 1.7E+09 0.201539 -108.851 5.035491E-02 13.6040 3.49428 95.1215 0.317789 -78.4122 1.8E+09 0.194288 -110.988 5.050825E-02 12.9411 3.30758 93.9633 0.311800 -79.3715 1.9E+09 0.187867 -113.001 5.064218E-02 12.3482 3.13919 92.8761 0.306940 -80.2768 2.0E+09 0.182157 -114.902 5.076045E-02 11.8151 2.98658 91.8500 0.303051 -81.1365 2.1E+09 0.177056 -116.698 5.086598E-02 11.3338 2.84766 90.8766 0.300003 -81.9578 2.2E+09 0.172484 -118.399 5.096107E-02 10.8974 2.72068 89.9494 0.297686 -82.7460 2.3E+09 0.168370 -120.012 5.104755E-02 10.5001 2.60420 89.0626 0.296007 -83.5057 2.4E+09 0.164656 -121.542 5.112690E-02 10.1373 2.49697 88.2115 0.294889 -84.2405 2.5E+09 0.161293 -122.996 5.120031E-02 9.80479 2.39793 87.3920 0.294266 -84.9533 2.6E+09 0.158239 -124.378 5.126876E-02 9.49919 2.30619 86.6007 0.294081 -85.6466 2.7E+09 0.155458 -125.694 5.133304E-02 9.21750 2.22098 85.8348 0.294285 -86.3223 2.8E+09 0.152919 -126.947 5.139381E-02 8.95716 2.14162 85.0916 0.294836 -86.9822 2.9E+09 0.150595 -128.140 5.145164E-02 8.71595 2.06753 84.3690 0.295696 -87.6275 3.0E+09 0.148463 -129.279 5.150697E-02 8.49194 1.99820 83.6651 0.296834 -88.2595 9-42,

Die Characteristics

PROCESS: UHF-1 DIE DIMENSIONS: 53 x 52 x 14 ± 1mils 1340µm x 1320µm x 355.6µm ± 25.4µm METALIZATION: Type: Metal 1: AlCu(2%)/TiW Type: Metal 2: AlCu(2%) Thickness: Metal 1: 8kÅ ± 0.5kÅ Thickness: Metal 2: 16kÅ ± 0.8kÅ GLASSIVATION: Type: Nitride Thickness: 4kÅ ± 0.5kÅ DIE ATTACH: Material: Epoxy WORST CASE CURRENT DENSITY: 1.50 x 105 A/cm2

Metallization Mask Layout

HFA3102 TOP VIEW2114 13 1340µm (53ms) 67891320µm (52ms) Pad numbers correspond to the 14 pin SOIC pinout. 9-43]
15

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