Download: Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

GA100TS60U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology VCES = 600V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 VCE(on) typ. = 1.6V kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparallel diodes with ultra- soft @VGE = 15V, IC = 100A recovery • Industry standard package • UL recognition pending Benefits • Increased operating efficiency • Direct mounting to heatsink • Performance optimized for power conversion: UPS, SMPS, Welding • Lower EMI, requires less snubbing Absolute...
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GA100TS60U

"HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT

Features

• Generation 4 IGBT technology VCES = 600V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 VCE(on) typ. = 1.6V kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparallel diodes with ultra- soft @VGE = 15V, IC = 100A recovery • Industry standard package • UL recognition pending

Benefits

• Increased operating efficiency • Direct mounting to heatsink • Performance optimized for power conversion: UPS, SMPS, Welding • Lower EMI, requires less snubbing

Absolute Maximum Ratings

Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 100 ICM Pulsed Collector Current• 200 A ILM Peak Switching Current‚ 200 IFM Peak Diode Forward Current 200 VGE Gate-to-Emitter Voltage ±20 V VISOL RMS Isolation Voltage, Any Terminal To Case, t = 1 min 2500 PD @ TC = 25°C Maximum Power Dissipation 320 W PD @ TC = 85°C Maximum Power Dissipation 170 TJ Operating Junction Temperature Range -40 to +150 °C TSTG Storage Temperature Range -40 to +125

Thermal / Mechanical Characteristics

Parameter Typ. Max. Units RθJC Thermal Resistance, Junction-to-Case - IGBT — 0.38 RθJC Thermal Resistance, Junction-to-Case - Diode — 0.70 °C/W RθCS Thermal Resistance, Case-to-Sink - Module 0.1 — Mounting Torque, Case-to-Heatsink — 6.0NmMounting Torque, Case-to-Terminal 1, 2 & 3 — 5.0 Weight of Module 200 — g www.irf.com 1 09/02/02,

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — VGE = 0V, IC = 1mA VCE(on) Collector-to-Emitter Voltage — 1.6 2.1 VGE = 15V, IC = 100A — 1.6 — V VGE = 15V, IC = 100A, TJ = 125°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 IC = 500µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 500µA gfe Forward Transconductance „ — 107 — S VCE = 25V, IC = 100A ICES Collector-to-Emitter Leaking Current — — 1.0 mA VGE = 0V, VCE = 600V — — 10 VGE = 0V, VCE = 600V, TJ = 125°C VFM Diode Forward Voltage - Maximum — 3.6 — V IF = 100A, VGE = 0V — 3.5 — IF = 100A, VGE = 0V, TJ = 125°C IGES Gate-to-Emitter Leakage Current — — 100 nA VGE = ±20V

Dynamic Characteristics - TJ = 125°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) — 443 664 VCC = 400V Qge Gate - Emitter Charge (turn-on) — 86 129 nC IC = 66A Qgc Gate - Collector Charge (turn-on) — 150 225 TJ = 25°C td(on) Turn-On Delay Time — 168 — RG1 = 27Ω, RG2 = 0Ω tr Rise Time — 145 — ns IC = 100A td(off) Turn-Off Delay Time — 320 — VCC = 360V tf Fall Time — 242 — VGE = ±15V Eon Turn-On Switching Energy — 4.0 — mJ Eoff (1) Turn-Off Switching Energy — 7.0 — Ets (1) Total Switching Energy — 11 17 Cies Input Capacitance — 9837 — VGE = 0V Coes Output Capacitance — 615 — pF VCC = 30V Cres Reverse Transfer Capacitance — 128 — ƒ = 1 MHz trr Diode Reverse Recovery Time — 143 — ns IC = 100A Irr Diode Peak ReverseCurrent — 95 — A RG1 = 27Ω Qrr Diode Recovery Charge — 6813 — nC RG2 = 0Ω di(rec)M/dt Diode Peak Rate of Fall of Recovery — 1883 — A/µs VCC = 360V During tb di/dt»1300A/µs 2 www.irf.com, For both: Duty cycle: 50% T = 125°C 80 JTsink= 90°C Gate drive as specified Power Dissipation = W Square wave: 60% of rated voltage 40 I Ideal diodes 0.1 1 10 100 f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental) TJ = 125oCTJ = 25 ° C TJ = 125 ° C 100 TJ = 25oCVGE= 15VVCC= 50V 20µs PULSE WIDTH 5µsPULSEWIDTH 10 1 0.8 1.2 1.6 2.0 2.456789VCE, Collector-to-Emitter Voltage (V) VG E , Gate-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

www.irf.com3IC, Collector-to-Emitter Current (A) LOAD CURRENT (A) I C , Collector-to-Emitter Current (A), 120 2.5 VG E = 15V 80 us PULSE WIDTHIC= 200A80 2.0IC= 100A40 1.5IC= 50A01.0 25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160TC, Case Temperature ( ° C) TJ , Junction Temperature ( ° C)

Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Typical Collector-to-Emitter Voltage Temperature vs. Junction Temperature

D = 0.50 0.20 0.10 0.1 0.05 0.02 PDM 0.01 Single Pulse t1 (Thermal Resistance) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDMxZthJC+ TC 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000t1, Rectangular Pulse Duration (Seconds) 4 www.irf.com Thermal Impedance - Z thJCMaximum DC Collector Current(A) VC E , Collector-to-Emitter Voltage(V), V 20GE = 0V, f = 1MHz VCC = 400V Cies = Cge + Cgc , Cc e SHORTEDIC= 66A Cres = Cgc 16000 Coes = Cce + Cgc 16 Cies 12000 12 8000 8 Coes 4000 C 4res00110 100 0 100 200 300 400 500VCE, Collector-to-Emitter Voltage (V) Q G , Total Gate Charge (nC)

Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs. Collector-to-Emitter Voltage Gate-to-Emitter Voltage

18 100VCC= 360VRG= OΩhmΩVGE= 15V VG E = 15V TJ = 25 ° C VC C = 360V 16IC= 100AIC= 200AIC= 100AIC= 50A8110 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG , Gate Resis tanc e (OΩhm ) T J , Junction Temperature ( ° C )

Fig. 9 - Typical Switching Losses vs. Gate Fig. 10 - Typical Switching Losses vs. Resistance Junction Temperature

www.irf.com 5 Total Switching Losses (mJ) C, Capacitance (pF) Total Switching Losses (mJ) VG E , Gate-to-Emitter Voltage (V), 30 300 RG = OΩhmΩVGE= 20VTJ= 150 ° CTJ= 125°C VC C = 0V25 250VCEmeasured at terminal (Peak Voltage) VG E = 15V 20 200 15 150 SAFE OPERATING AREA 10 100 5 5000A040 80 120 160 200 0 100 200 300 400 500 600 700IC, Collector-to-emitter Current (A) VC E , Collector-to-Emitter Voltage (V)

Fig. 11 - Typical Switching Losses vs. Fig. 12 - Reverse Bias SOA Collector-to-Emitter Current

I F = 200A 10000IF= 100AIF= 50A T = 125°C 6000JTJ= 25°C VR = 360V TJ = 125°C TJ = 25°C 10 0 1.0 2.0 3.0 4.0 5.0 500 1000 1500 2000 Forward Voltage Drop - VFM(V) di f /dt - (A/µs)

Fig. 13 - Typical Forward Voltage Drop vs. Fig. 14 - Typical Stored Charge vs. dif/dt Instantaneous Forward Current

6 www.irf.com Instantaneous Forward Current - I F (A) Total Switching Losses (mJ) QRR- (nC), 240 150 VR = 360V TJ = 125°C TJ = 25°CIF= 200AIF= 200A 120IF= 100AI F = 100A 200 IF = 50A IF = 50A VR = 360V TJ = 125°C TJ = 25°C 80 0 500 1000 1500 2000 500 1000 1500 2000 di f /dt - (A/µs) di f /dt - (A/µs)

Fig. 15 - Typical Reverse Recovery vs. dif/dt Fig. 16 - Typical Recovery Current vs. dif/dt

www.irf.com7trr- (ns) IIRRM- (A), 90% Vge +Vge Vce 90% Ic Ic 10% Vce Ic 5% Ic td(off) tf t1+5µS Eoff = ∫ Vc e ic dt t1

Fig. 17 - Test Circuit for Measurement of

ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2

Fig. 18 - Test Waveforms for Circuit of Fig. 17, Defining Eoff,

td(off), tf trr GATE VOLTAGE D.U.T. trr Ic Qrr =∫ id dt tx 10% +Vg +Vg tx 10% Irr 10% Vcc Vcc DUT VOLTAGE Vce AND CURRENT Vpk Irr 10% Ic Vcc 90% Ic Ipk Ic DIODE RECOVERY

WAVEFORMS

5% Vce td(on) tr t2 Eon =∫ Vc e ie dt t4 t1 Erec =∫ Vd id dt t3 t1 t2 DIODE REVERSE RECOVERY ENERGY t3 t4

Fig. 19 - Test Waveforms for Circuit of Fig. 17, Fig. 20 - Test Waveforms for Circuit of Fig. 17,

Defining E , t , t Defining Erec, t , Q , Ion d(on) r rr rr rr 8 www.irf.com, Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2

Figure 21. Figure 22.

www.irf.com 9, Notes:

Repetitive rating; VGE = 20V, pulse width limited by

max. junction temperature.

See fig. 17 For screws M6. For screws M5. Pulse width 50µs; single shot. Case Outline — INT-A-PAK

94.70 [3.72893.70 3.689] NOTES: 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 80.30 [3.16179.70 3.138] 2. CONTROLLING DIMENSION: MILLIMETER. 2X 23.50 .92522.50 [.886] 4.50 3.50 [.177.138] 11 6 10 7 34.70 [1.366] 17.50 .68933.70 1.327 16.50 [.650] 12385946.80 .267 2X Ø 6.20 [.244] 3X M5 8.00 [.315] 4X FASTON TAB (110)8 [.314] 42.00 [1.654] 6.60 MAX. 41.00 1.614 .260 2.8 x 0.5 [.110 x .020] 30.50 1.201 24.00 .945 29.00 [1.142] 23.00 [.906] 8.65 [.341 2X 13.30 .524 0.15 [.0059] CONVEX 7.65 .301] 12.70 [.500] 32.00 92.10 [3.626] 31.00 1.260 91.10 [1.220] 3.587

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/02

10 www.irf.com]
15

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