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FS7KM-12 FS7KM-12 OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 2.54 ± 0.25 2.54 ± 0.25123wqGATE ¡V w DRAINDSS ... 600VqeSOURCE ¡rDS (ON) (MAX) ... 1.3Ω ¡ID ... 7A e ¡Viso ... 2000V TO-220FN APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per- sonal computer etc. MAXIMUM RATINGS (Tc = 25°C) Symbol Parameter Conditions Ratings Unit VDSS Drain-source voltage VGS = 0V 600 V VGSS Gate-source voltage VDS = 0V ±30 V ID Drain current7AIDM Drain current (Pulsed) 21 A PD Maximum power dissipation 35 W Tch Channel temperature –55 ...
Author: Abefor Shared: 8/19/19
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FS7KM-12 FS7KM-12 OUTLINE DRAWING Dimensions in mm

10 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 2.54 ± 0.25 2.54 ± 0.25123wqGATE ¡V w DRAINDSS ... 600VqeSOURCE ¡rDS (ON) (MAX) ... 1.3Ω ¡ID ... 7A e ¡Viso ... 2000V TO-220FN

APPLICATION SMPS, DC-DC Converter, battery charger, power

supply of printer, copier, HDD, FDD, TV, VCR, per- sonal computer etc. MAXIMUM RATINGS (Tc = 25°C) Symbol Parameter Conditions Ratings Unit VDSS Drain-source voltage VGS = 0V 600 V VGSS Gate-source voltage VDS = 0V ±30 V ID Drain current7AIDM Drain current (Pulsed) 21 A PD Maximum power dissipation 35 W Tch Channel temperature –55 ~ +150 °C Tstg Storage temperature –55 ~ +150 °C Viso Isolation voltage AC for 1minute, Terminal to case 2000 Vrms — Weight Typical value 2.0 g 14 ± 0.5 15 ± 0.3 3.6 ± 0.3 3 ± 0.3 2.6 ± 0.2 6.5 ± 0.3 4.5 ± 0.2, ELECTRICAL CHARACTERISTICS (Tch = 25°C) Limits Symbol Parameter Test conditions Unit Min. Typ. Max. V (BR) DSS Drain-source breakdown voltage ID = 1mA, VGS = 0V 600 — — V V (BR) GSS Gate-source breakdown voltage IG = ±100µA, VDS = 0V ±30 — — V IGSS Gate-source leakage current VGS = ±25V, VDS = 0V — — ±10 µA IDSS Drain-source leakage current VDS = 600V, VGS = 0V — — 1 mA VGS (th) Gate-source threshold voltage ID = 1mA, VDS = 10V234VrDS (ON) Drain-source on-state resistance ID = 3A, VGS = 10V — 1.0 1.3 Ω VDS (ON) Drain-source on-state voltage ID = 3A, VGS = 10V — 3.0 3.9 V yfs Forward transfer admittance ID = 3A, VDS = 10V 3.0 5.0 — S Ciss Input capacitance — 1100 — pF Coss Output capacitance VDS = 25V, VGS = 0V, f = 1MHz — 125 — pF Crss Reverse transfer capacitance — 17 — pF td (on) Turn-on delay time — 30 — ns tr Rise time — 30 — ns VDD = 200V, ID = 3A, VGS = 10V, RGEN = RGS = 50Ω td (off) Turn-off delay time — 100 — ns tf Fall time — 35 — ns VSD Source-drain voltage IS = 3A, VGS = 0V — 1.5 2.0 V Rth (ch-c) Thermal resistance Channel to case — — 3.57 °C/W PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA 5052tw=10µs 40 101 5 100µs 30321ms 207510ms 10 2 TC = 25°C Single Pulse 10–105

DC

0 50 100 150 200235710123571022357103 2 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS VGS = 20V 20 10V 10 PD = 35W 8V PD = VGS=20V 6V 35W 10V 8V 16 8 TC = 25°C TC = 25°C Pulse Test Pulse Test 12 6V6845V 4 5V200010 20 30 40 5004812 16 20 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) DRAIN CURRENT ID (A), ON-STATE VOLTAGE VS. ON-STATE RESISTANCE VS. GATE-SOURCE VOLTAGE DRAIN CURRENT 40 2.0 TC = 25°C TC = 25°C VGS = 10V Pulse Test Pulse Test 20V 32 1.6 24 ID = 14A 1.2 16 0.8 10A 7A 8 0.4 3A04812 16 20 10–1235710023571012357102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE TRANSFER CHARACTERISTICS VS.DRAIN CURRENT 20 101 TC = 25°C VDS = 10V TC = 25°C7 VDS = 50V Pulse Test Pulse Test 516 75°C 12 125°C8743010–104812 16 20 10–123571002357101 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE SWITCHING CHARACTERISTICS 2 103 Ciss 7 Tch = 25°C103 VDD = 200V75VGS = 10V 5 RGEN = RGS = 50Ω22td(off) 102 Coss 102573tf Crss 3 tr 101 Tch = 25°C2f= 1MHz td(on)7 5 VGS = 0V 1012357100235710123571022310–123571002357101 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) CAPACITANCE DRAIN-SOURCE ON-STATE Ciss, Coss, Crss (pF) DRAIN CURRENT ID (A) VOLTAGE VDS (ON) (V) FORWARD TRANSFER DRAIN-SOURCE ON-STATE SWITCHING TIME (ns) ADMITTANCE yfs (S) RESISTANCE rDS (ON) (Ω), GATE-SOURCE VOLTAGE SOURCE-DRAIN DIODE VS.GATE CHARGE FORWARD CHARACTERISTICS 20 20 Tch = 25°C TC= VGS = 0V ID = 7A 125°C Pulse Test 16 16 25°C VDS = 100V 200V 75°C 12 12 400V8844020 40 60 80 100 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE CHANNEL TEMPERATURE 101 5.0 7 VGS = 10V VDS = 10V 5 ID = 1/2ID ID = 1mA Pulse Test 4.0 3.0 7 2.0 3 1.0 10–1 0 –50 0 50 100 150 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE TRANSIENT THERMAL IMPEDANCE (TYPICAL) CHARACTERISTICS 1.4 101 VGS = 0V7I5D = 1mA D=1 1.2 32 0.5 100 0.2 1.0750.1 2 PDM 0.8 10–1 0.05 tw 7 0.02 0.6 5 0.01

T

3 D= t w Single Pulse T 0.4 10–2 –50 0 50 100 150 10–42 3 5710–32 3 5710–22 3 5710–12 3 5710023571012357102 CHANNEL TEMPERATURE Tch (°C) PULSE WIDTH tw (s) DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (t°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) GATE-SOURCE VOLTAGE VGS (V) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) SOURCE CURRENT IS (A)]
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