Download: SEMICONDUCTOR Temperature-Compensated 1N821,A 1N823,A Zener Reference Diodes 1N825,A 1N827,A1N829,A

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Temperature-Compensated 1N821,A 1N823,A Zener Reference Diodes 1N825,A 1N827,A1N829,A Temperature-compensated zener reference diodes utilizing a single chip oxide passi- vated junction for long-term voltage stability. A rugged, glass-enclosed, hermetically sealed structure. Mechanical Characteristics: TEMPERATURE- CASE: Hermetically sealed, all-glass COMPENSATED DIMENSIONS: See outline drawing. SILICON ZENER FINISH: All external surfaces are corrosion resistant and leads are readily solderable. REFERENCE DIODES POLARITY: Cathode indicated by polarity band....
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Temperature-Compensated 1N821,A 1N823,A Zener Reference Diodes 1N825,A 1N827,A1N829,A

Temperature-compensated zener reference diodes utilizing a single chip oxide passi- vated junction for long-term voltage stability. A rugged, glass-enclosed, hermetically sealed structure. Mechanical Characteristics: TEMPERATURE- CASE: Hermetically sealed, all-glass COMPENSATED DIMENSIONS: See outline drawing. SILICON ZENER FINISH: All external surfaces are corrosion resistant and leads are readily solderable. REFERENCE DIODES POLARITY: Cathode indicated by polarity band. 6.2 V, 400 mW WEIGHT: 0.2 Gram (approx.) MOUNTING POSITION: Any Maximum Ratings Junction Temperature: – 55 to +175°C Storage Temperature: – 65 to +175°C DC Power Dissipation: 400 mW @ TA = 50°C WAFER FAB LOCATION: Phoenix, Arizona ASSEMBLY/TEST LOCATION: Phoenix, Arizona CASE 299 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted. VZ = 6.2 V ± 5%* @ IZT = 7.5 mA) (Note 5) Temperature Maximum Ambient Coefficient Maximum Voltage Change Test Temperature For Reference Only Dynamic Impedance JEDEC ∆VZ (Volts) °C %/°C ZZT Ohms Type No. (Note 1) ±1°C (Note 1) (Note 2) 1N821 0.096 – 55, 0, +25, +75, +100 0.01 15 1N823 0.048 0.005 1N825 0.019 0.002 1N827 0.009 0.001 1N829 0.005 0.0005 1N821A 0.096 0.01 10 1N823A 0.048 0.005 1N825A 0.019 0.002 1N827A 0.009 0.001 1N829A 0.005 0.0005 *Tighter-tolerance units available on special request. 8-159,

MAXIMUM VOLTAGE CHANGE versus AMBIENT TEMPERATURE

(with IZT = 7.5 mA ±0.01 mA) (See Note 3) 1N821 through 1N829 100 25 1N821,A IZT = 7.5 mA 1N821,A 1N823,A 75 1N825,A 50 ∆VZ = +31 mV 1N823,A 10 1N827,A 0 1N829,A 0 –5 –25 1N827,A –10 –50 ∆VZ = –31 mV 1N823,A –15 –75 1N825,A –20 1N823,A 1N821,A 1N821,A –10 –25 0–55 0 50 100 –55 0 50 100 TA, AMBIENT TEMPERATURE (°C)

Figure 1a Figure 1b ZENER CURRENT versus MAXIMUM VOLTAGE CHANGE

(At Specified Temperatures) (See Note 4)

MORE THAN 95% OF THE UNITS ARE IN THE RANGES INDICATED BY THE CURVES.

10 –55°C 10+100°C +25°C +100°C99+25°C8I8ZT IZT 7.5 7.57766+100°C +25°C +100°C +25°C5544–75 –50 –25 0 25 50 –75 –50 –25 0 25 50 ∆VZ, MAXIMUM VOLTAGE CHANGE (mV) ∆VZ, MAXIMUM VOLTAGE CHANGE (mV) (Referenced to IZT = 7.5 mA) (Referenced to IZT = 7.5 mA)

Figure 2. 1N821 Series Figure 3. 1N821A Series

Devices listed in bold, italic are Motorola preferred devices. 6.2 Volt OTC 400 mW DO-35 Data Sheet Motorola TVS/Zener Device Data 8-160IZ, ZENER CURRENT (mA) ∆VZ , MAXIMUM VOLTAGE CHANGE (mV) (Referenced to –55°C) I Z , ZENER CURRENT (mA),

MAXIMUM ZENER IMPEDANCE versus ZENER CURRENT

(See Note 2)

MORE THAN 95% OF THE UNITS ARE IN THE RANGES INDICATED BY THE CURVES.

1000 1000 800 800 600 600 400 400 200 200 100 100 80 80 60 60 25°C 40 40 100°C 20 100°C 20 10 25°C 10886–55°C644–55°C22111246810 20 40 60 80 1001246810 20 40 60 80 100 IZ, ZENER CURRENT (mA) IZ, ZENER CURRENT (mA)

Figure 4. 1N821 Series Figure 5. 1N821A Series

NOTE 1. VOLTAGE VARIATION (∆VZ) AND TEMPERATURE COEFFICIENT NOTE 3. All reference diodes are characterized by the “box method.” This guarantees a maximum volt- These graphs can be used to determine the maximum voltage change of any device in the age variation (∆VZ) over the specified temperature range, at the specified test current (I series over any specific temperature range. For example, a temperature change from 0 toZT), verified by tests at indicated temperature points within the range. VZ is measured and re- +50°C will cause a voltage change no greater than +31 mV or – 31 mV for 1N821 or 1N821A, corded at each temperature specified. The ∆VZ between the highest and lowest values must as illustrated by the dashed lines in Figure 1. The boundaries given are maximum values. For not exceed the maximum ∆VZ given. This method of indicating voltage stability is now used greater resolution, an expanded view of the center area in Figure 1a is shown in Figure 1b. for JEDEC registration as well as for military qualification. The former method of indicating voltage stability — by means of temperature coefficient accurately reflects the voltage devi- NOTE 4. ation at the temperature extremes, but is not necessarily accurate within the temperature The maximum voltage change, ∆VZ, Figures 2 and 3 is due entirely to the impedance of the range because reference diodes have a nonlinear temperature relationship. The temperature device. If both temperature and IZT are varied, then the total voltage change may be obtained coefficient, therefore, is given only as a reference. by graphically adding ∆VZ in Figure 2 or 3 to the ∆VZ in Figure 1 for the device under consider- ation. If the device is to be operated at some stable current other than the specified test cur- rent, a new set of characteristics may be plotted by superimposing the data in Figure 2 or 3 NOTE 2. on Figure 1. For a more detailed explanation see application note in later section. The dynamic zener impedance, ZZT, is derived from the 60 Hz ac voltage drop which results when an ac current with an rms value equal to 10% of the dc zener current, IZT, is superim- NOTE 5. posed on IZT. Curves showing the variation of zener impedance with zener current for each Zener voltage limits at 25°C measured with the test current (IZT) applied with the device junc- series are given in Figures 4 and 5. tion in thermal equilibrium at an ambient temperature of 25°C. 8-161,

Zener Voltage Reference Diodes

6.2 Volt OTC 400 mW DO-35 NOTES: 1. PACKAGE CONTOUR OPTIONAL WITHIN A AND B

B HEAT SLUGS, IF ANY, SHALL BE INCLUDED

WITHIN THIS CYLINDER, BUT NOT SUBJECT TO THE MINIMUM LIMIT OF B.

D 2. LEAD DIAMETER NOT CONTROLLED IN ZONE FTO ALLOW FOR FLASH, LEAD FINISH BUILDUP K AND MINOR IRREGULARITIES OTHER THAN F HEAT SLUGS.

3. POLARITY DENOTED BY CATHODE BAND. 4. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

A

MILLIMETERS INCHES DIM MIN MAX MIN MAX A 3.05 5.08 0.120 0.200

F B 1.52 2.29 0.060 0.090 K D 0.46 0.56 0.018 0.022

F — 1.27 — 0.050 K 25.40 38.10 1.000 1.500 All JEDEC dimensions and notes apply.

CASE 299-02

(Refer to Section 10 for Surface Mount, Thermal Data and Footprint Information.)

MULTIPLE PACKAGE QUANTITY (MPQ) REQUIREMENTS Package Option Type No. Suffix MPQ (Units) Tape and Reel RL, RL2(1) 5K Tape and Ammo TA, TA2(1) 5K

NOTE: 1. The “2” suffix designates 26 mm tape spacing. (Refer to Section 10 for more information on Packaging Specifications.) 8-162]
15

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