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Order this document SEMICONDUCTOR TECHNICAL DATA by MMBZ5V6ALT1/D "% & "!"% " "! !" !#$ Transient Voltage Suppressors Motorola Preferred Devices for ESD Protection These dual monolithic silicon zener diodes are designed for applications SOT–23 COMMON ANODE DUAL requiring transient overvoltage protection capability. They are intended for use ZENER OVERVOLTAGE in voltage and ESD sensitive equipment such as computers, printers, business TRANSIENT SUPPRESSORS machines, communication systems, medical equipment and other applications. 24 & 40 WATTS Their dual junction common anode design protects tw...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MMBZ5V6ALT1/D

"% & "!"% " "! !" !#$

Transient Voltage Suppressors Motorola Preferred Devices

for ESD Protection These dual monolithic silicon zener diodes are designed for applications SOT–23 COMMON ANODE DUAL requiring transient overvoltage protection capability. They are intended for use ZENER OVERVOLTAGE in voltage and ESD sensitive equipment such as computers, printers, business TRANSIENT SUPPRESSORS machines, communication systems, medical equipment and other applications. 24 & 40 WATTS Their dual junction common anode design protects two separate lines using PEAK POWER only one package. These devices are ideal for situations where board space is at a premium. Specification Features: 3 • SOT–23 Package Allows Either Two Separate Unidirectional 1 Configurations or a Single Bidirectional Configuration • Peak Power — 24 or 40 Watts @ 1.0 ms (Unidirectional), CASE 318–08 per Figure 5 Waveform STYLE 12 • Maximum Clamping Voltage @ Peak Pulse Current LOW PROFILE SOT–23 • Low Leakage < 5.0 µA PLASTIC • ESD Rating of Class N (exceeding 16 kV) per the Human Body Model Mechanical Characteristics: • Void Free, Transfer–Molded, Thermosetting Plastic Case 1 • Corrosion Resistant Finish, Easily Solderable 2 • Package Designed for Optimal Automated Board Assembly • Small Package Size for High Density Applications PIN 1. CATHODE • Available in 8 mm Tape and Reel 2. CATHODE3. ANODE Use the Device Number to order the 7 inch/3,000 unit reel. Replace the “T1” with “T3” in the Device Number to order the 13 inch/10,000 unit reel. THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Unit Peak Power Dissipation @ 1.0 ms (1) MMBZ5V6ALT1, MMBZ6V2ALT1 Ppk 24 Watts @ TA ≤ 25°C MMBZ15VALT1, MMBZ20VALT1 40 Total Power Dissipation on FR–5 Board (2) @ TA = 25°C °PD° 225 °mW° Derate above 25°C 1.8 mW/°C Thermal Resistance Junction to Ambient RθJA 556 °C/W Total Power Dissipation on Alumina Substrate (3) @ TA = 25°C °PD° 300 °mW Derate above 25°C 2.4 mW/°C Thermal Resistance Junction to Ambient RθJA 417 °C/W Junction and Storage Temperature Range TJ – 55 to +150 °C Tstg Lead Solder Temperature — Maximum (10 Second Duration) TL 260 °C (1) Non–repetitive current pulse per Figure 5 and derate above TA = 25°C per Figure 6. (2) FR–5 = 1.0 x 0.75 x 0.62 in. (3) Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina *Other voltages may be available upon request Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. Rev1MMMotBorZol5a,V In6cA. 1L9T961 MMBZ6V2ALT1 MMBZ15VALT1 MMBZ20VALT1 MOTOROLA, ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3) (VF = 0.9 V Max @ IF = 10 mA) Max Reverse Max Reverse Breakdown Voltage Max Leakage Current Max Zener Impedance (5) Voltage @ MaximumReverse I (4) Temperature Surge RSM VZT(3) (Clamping Coefficient of @ I I @ V Z @ I Z @ I Current(V) TRRZT ZT ZK ZK Voltage) VBR (mA) (µA) (V) (Ω) (mA) (Ω) (mA) IRSM(4) VRSM (mV/°C) Min Nom Max (A) (V) 5.32 5.6 5.88 20 5.0 3.0 11 1600 0.25 3.0 8.0 1.26 5.89 6.2 6.51 1.0 0.5 3.0 — — — 2.76 8.7 2.80 (VF = 1.1 V Max @ IF = 200 mA) Breakdown Voltage Max Reverse Maximum Reverse Voltage Max Reverse Max Reverse Voltage @ I (4) Temperature VBR(3) Working Peak Leakage Current Surge Current

RSM

@ IT (Clamping Voltage) Coefficient of(V) VRWM IRWM IRSM(4) (mA) V V(V) I (nA) (A) RSM BR Min Nom Max R (V) (mV/°C) 14.25 15 15.75 1.0 12.0 50 1.9 21 12.3 19.0 20 21.0 1.0 17.0 50 1.4 28 17.2 (3) VZ/VBR measured at pulse test current IT at an ambient temperature of 25°C. (4) Surge current waveform per Figure 5 and derate per Figure 6. (5) ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current supplied. The specfied limits are (5) IZ(AC) = 0.1 IZ(DC), with AC frequency = 1 kHz.

TYPICAL CHARACTERISTICS

18 1000 3 0.1 0 0.01 – 40 0 + 50 + 100 + 150 – 40 + 25 + 85 + 125 TEMPERATURE (°C) TEMPERATURE (°C) Figure 1. Typical Breakdown Voltage Figure 2. Typical Leakage Current versus Temperature versus Temperature (Upper curve for each voltage is bidirectional mode, lower curve is unidirectional mode) MOTOROLA MMBZ5V6ALT1 MMBZ6V2ALT1 MMBZ15VALT1 MMBZ20VALT1 BREAKDOWN VOLTAGE (VOLTS) (VZ, VBR @ I T) IR (nA), 320 300 240 ALUMINA SUBSTRATE 5.6 V 160 150 15 V 100 80 FR–5 BOARD000123025 50 75 100 125 150 175 BIAS (V) TEMPERATURE (°C)

Figure 3. Typical Capacitance versus Bias Voltage Figure 4. Steady State Power Derating Curve

(Upper curve for each voltage is unidirectional mode, lower curve is bidirectional mode) PULSE WIDTH (tP) IS DEFINED 90 tr AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 80 100 PEAK VALUE — IRSM 50% OF IRSM. 70 tr ≤ 10 µs

IRSM

HALF VALUE — 50 tP 200001234025 50 75 100 125 150 175 200 t, TIME (ms) TA, AMBIENT TEMPERATURE (°C)

Figure 5. Pulse Waveform Figure 6. Pulse Derating Curve MMBZ5V6ALT1 MMBZ5V6ALT1

100 100 RECTANGULAR RECTANGULAR BIDIRECTIONAL WAVEFORM, TA = 25°C WAVEFORM, TA = 25°C

BIDIRECTIONAL

10 UNIDIRECTIONAL 10

UNIDIRECTIONAL

1 1 0.1 1 10 100 1000 0.1 1 10 100 1000 PW, PULSE WIDTH (ms) UNIDIRECTIONAL PW, PULSE WIDTH (ms)

Figure 7. Maximum Non–repetitive Surge Figure 8. Maximum Non–repetitive Surge Power, Ppk versus PW Power, Ppk(NOM) versus PW

Power is defined as VRSM x IZ(pk) where VRSM is Power is defined as VZ(NOM) x IZ(pk) where the clamping voltage at IZ(pk). VZ(NOM) is the nominal zener voltage measured at the low test current used for voltage classification.

MMBZ5V6ALT1 MMBZ6V2ALT1 MMBZ15VALT1 MMBZ20VALT1 MOTOROLA

Ppk PEAK SURGE POWER (W) VALUE (%) C, CAPACITANCE (pF) PEAK PULSE DERATING IN % OF PEAK POWER Ppk PEAK SURGE POWER (W) OR CURRENT @ TA = 25°C PD , POWER DISSIPATION (mW),

TYPICAL COMMON ANODE APPLICATIONS

A quad junction common anode design in a SOT–23 pack- when board space is at a premium. Two simplified examples age protects four separate lines using only one package. of TVS applications are illustrated below. This adds flexibility and creativity to PCB design especially Computer Interface Protection

A

KEYBOARD B TERMINAL C FUNCTIONALI/O PRINTER DECODER ETC. D

GND

MMBZ5V6ALT1 MMBZ6V2ALT1 MMBZ15VALT1 MMBZ20VALT1 Microprocessor Protection

VDD VGG

ADDRESS BUS RAM ROM DATA BUS

CPU

I/O MMBZ5V6ALT1 MMBZ6V2ALT1 CLOCK MMBZ15VALT1 MMBZ20VALT1 CONTROL BUS

GND

MMBZ5V6ALT1 MMBZ6V2ALT1 MMBZ15VALT1 MMBZ20VALT1 MOTOROLA MMBZ5V6ALT1 MMBZ6V2ALT1 MMBZ15VALT1 MMBZ20VALT1,

INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total interface between the board and the package. With the design. The footprint for the semiconductor packages must correct pad geometry, the packages will self align when be the correct size to insure proper solder connection subjected to a solder reflow process. 0.037 0.037 0.95 0.95 0.079 2.0 0.035 0.9 0.031 inches 0.8 mm SOT–23 SOT–23 POWER DISSIPATION The power dissipation of the SOT–23 is a function of the SOLDERING PRECAUTIONS drain pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. The melting temperature of solder is higher than the rated Power dissipation for a surface mount device is determined temperature of the device. When the entire device is heated by TJ(max), the maximum rated junction temperature of the to a high temperature, failure to complete soldering within a die, RθJA, the thermal resistance from the device junction to short time could result in device failure. Therefore, the ambient, and the operating temperature, T . Using the following items should always be observed in order toA values provided on the data sheet for the SOT–23 package, minimize the thermal stress to which the devices are PD can be calculated as follows: subjected. • Always preheat the device. TJ(max) – TA P = • The delta temperature between the preheat and solderingD RθJA should be 100°C or less.* The values for the equation are found in the maximum • When preheating and soldering, the temperature of the ratings table on the data sheet. Substituting these values into leads and the case must not exceed the maximum the equation for an ambient temperature T of 25°C, one can temperature ratings as shown on the data sheet. WhenA calculate the power dissipation of the device which in this using infrared heating with the reflow soldering method, case is 225 milliwatts. the difference shall be a maximum of 10°C. • The soldering temperature and time shall not exceed P = 150°C – 25°C = 225 milliwatts 260°C for more than 10 seconds.D 556°C/W • When shifting from preheating to soldering, the maximum The 556°C/W for the SOT–23 package assumes the use temperature gradient shall be 5°C or less. of the recommended footprint on a glass epoxy printed circuit • After soldering has been completed, the device should be board to achieve a power dissipation of 225 milliwatts. There allowed to cool naturally for at least three minutes. are other alternatives to achieving higher power dissipation Gradual cooling should be used as the use of forced from the SOT–23 package. Another alternative would be to cooling will increase the temperature gradient and result use a ceramic substrate or an aluminum core board such as in latent failure due to mechanical stress. Thermal Clad. Using a board material such as Thermal • Mechanical stress or shock should not be applied during Clad, an aluminum core board, the power dissipation can be cooling. doubled using the same footprint. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. MMBZ5V6ALT1 MMBZ6V2ALT1 MMBZ15VALT1 MMBZ20VALT1 MOTOROLA,

OUTLINE DIMENSIONS

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.

A 3. MAXIUMUM LEAD THICKNESS INCLUDES L LEAD FINISH THICKNESS. MINIMUM LEADSTYLE 12: THICKNESS IS THE MINIMUM THICKNESS OF

PIN 1. CATHODE BASE MATERIAL. 2. CATHODE 3 3. ANODE INCHES MILLIMETERS

B S DIM MIN MAX MIN MAX

12A0.1102 0.1197 2.80 3.04 B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11

VGD0.0150 0.0200 0.37 0.50

G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177

C K 0.0140 0.0285 0.35 0.69

L 0.0350 0.0401 0.89 1.02

HJS0.0830 0.1039 2.10 2.64DKV0.0177 0.0236 0.45 0.60 CASE 318–08 ISSUE AE

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: email is hidden – TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 ◊ MMBZ5V6ALT1/D

MOTOROLA MMBZ5V6ALT1 MM BZ 6V2AL T1 MM BZ15VALT1MMBZ20VALT16

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