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MOTOROLA SEMICONDUCTOR TECHNICAL DATA GENERAL 500 mW DO-35 Glass DATA Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN 500 mW THIS GROUP DO-35 GLASS 500 Milliwatt Hermetically Sealed GLASS ZENER DIODES500 MILLIWATTS Glass Silicon Zener Diodes 1.8–200 VOLTS Specification Features: • Complete Voltage Range — 1.8 to 200 Volts • DO-204AH Package — Smaller than Conventional DO-204AA Package • Double Slug Type Construction • Metallurgically Bonded Construction Mechanical Characteristics: CASE: Double slug type, hermetically sealed glass CASE 299DO-204AH MAXIMUM LEAD TEMPERATUR...
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA GENERAL

500 mW DO-35 Glass DATA

Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN 500 mW THIS GROUP DO-35 GLASS

500 Milliwatt

Hermetically Sealed GLASS ZENER DIODES500 MILLIWATTS Glass Silicon Zener Diodes 1.8–200 VOLTS

Specification Features: • Complete Voltage Range — 1.8 to 200 Volts • DO-204AH Package — Smaller than Conventional DO-204AA Package • Double Slug Type Construction • Metallurgically Bonded Construction Mechanical Characteristics: CASE: Double slug type, hermetically sealed glass CASE 299DO-204AH MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 230°C, 1/16″ from GLASS case for 10 seconds FINISH: All external surfaces are corrosion resistant with readily solderable leads POLARITY: Cathode indicated by color band. When operated in zener mode, cathode will be positive with respect to anode MOUNTING POSITION: Any WAFER FAB LOCATION: Phoenix, Arizona ASSEMBLY/TEST LOCATION: Seoul, Korea MAXIMUM RATINGS (Motorola Devices)* Rating Symbol Value Unit DC Power Dissipation and TL ≤ 75°C PD Lead Length = 3/8″ 500 mW Derate above TL = 75°C 4 mW/°C Operating and Storage Temperature Range TJ, Tstg – 65 to +200 °C * Some part number series have lower JEDEC registered ratings. 0.7

HEAT

0.6 SINKS 0.5 0.4 3/8” 3/8” 0.3 0.2 0.1 0 20 40 60 80 100 120 140 160 180 200 TL, LEAD TEMPERATURE (°C) Figure 1. Steady State Power Derating 6-12 PD , MAXIMUM POWER DISSIPATION (WATTS),

APPLICATION NOTE — ZENER VOLTAGE

Since the actual voltage available from a given zener diode 500 is temperature dependent, it is necessary to determine junc- tion temperature under any set of operating conditions in order 400 to calculate its value. The following procedure is recom- mended: L L Lead Temperature, TL, should be determined from: 300 TL = θLAPD + TA. 2.4–60 V θLA is the lead-to-ambient thermal resistance (°C/W) and PD is the power dissipation. The value for θLA will vary and depends 62–200 V on the device mounting method. θLA is generally 30 to 40°C/W 100 for the various clips and tie points in common use and for printed circuit board wiring. 0 The temperature of the lead can also be measured usinga00.2 0.4 0.6 0.8 1 thermocouple placed on the lead as close as possible to the tie L, LEAD LENGTH TO HEAT SINK (INCH) point. The thermal mass connected to the tie point is normally Figure 2. Typical Thermal Resistance large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the mea- 1000 sured value of TL, the junction temperature may be deter- 7000 mined by: 5000 TYPICAL LEAKAGE CURRENT AT 80% OF NOMINAL TJ = TL + ∆TJL. 2000 BREAKDOWN VOLTAGE ∆TJL is the increase in junction temperature above the lead 1000 temperature and may be found from Figure 2 for dc power: 700500 ∆TJL = θJLPD. For worst-case design, using expected limits of IZ, limits of PD and the extremes of TJ(∆TJ) may be estimated. Changes in 10070 voltage, VZ, can then be found from: 50 ∆V = θVZTJ. 20 θVZ, the zener voltage temperature coefficient, is found from 10 Figures 4 and 5. 7 Under high power-pulse operation, the zener voltage will 5 vary with time and may also be affected significantly by the zener resistance. For best regulation, keep current excursions as low as possible. 1 0.7 Surge limitations are given in Figure 7. They are lower than 0.5 would be expected by considering only junction temperature, +125°C as current crowding effects cause temperatures to be ex- 0.2 tremely high in small spots, resulting in device degradation 0.1 should the limits of Figure 7 be exceeded. 0.07 0.05 0.02 0.007 +25°C 0.005 0.002 0.001345678910 11 12 13 14 15 VZ, NOMINAL ZENER VOLTAGE (VOLTS) Figure 3. Typical Leakage Current 6-13 IR , LEAKAGE CURRENT (µA) θJL , JUNCTION-TO-LEAD THERMAL RESISTANCE (°C/W),

TEMPERATURE COEFFICIENTS

(–55°C to +150°C temperature range; 90% of the units are in the ranges indicated.) +12 100 +10 50 +8 30 +6 20 RANGE VZ @ IZ (NOTE 2) +4 10 +2 5 RANGE VZ @ IZT 0 (NOTE 2) 3 –2 2 –412345678910 11 12 10 20 30 50 70 100 VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS)

Figure 4a. Range for Units to 12 Volts Figure 4b. Range for Units 12 to 100 Volts

200 +6 V @ I 180 +4 Z ZTA = 25°C 160 +2 20 mA 140 0 0.01 mA 120 VZ @ IZT 1 mA (NOTE 2) –2 NOTE: BELOW 3 VOLTS AND ABOVE 8 VOLTS NOTE: CHANGES IN ZENER CURRENT DO NOT NOTE: AFFECT TEMPERATURE COEFFICIENTS 100 –4 120 130 140 150 160 170 180 190 200345678VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS)

Figure 4c. Range for Units 120 to 200 Volts Figure 5. Effect of Zener Current

1000 100 TA = 25°C 500 70 T = 25°C0VBIAS 50 A 200 0 BIAS301VBIAS 20 50 1 VOLT BIAS 207550% OF VZ BIAS10 50% OF 5 VZ BIAS31112510 20 50 100 120 140 160 180 190 200 220 VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS)

Figure 6a. Typical Capacitance 2.4–100 Volts Figure 6b. Typical Capacitance 120–200 Volts

6-14 C, CAPACITANCE (pF) θVZ , TEMPERATURE COEFFICIENT (mV/°C) θVZ , TEMPERATURE COEFFICIENT (mV/°C) C, CAPACITANCE (pF) θVZ , TEMPERATURE COEFFICIENT (mV/°C) θVZ , TEMPERATURE COEFFICIENT (mV/°C), 70 RECTANGULAR 50 11 V–91 V NONREPETITIVE WAVEFORM TJ = 25°C PRIOR TO 30 5% DUTY CYCLE 1.8 V–10 V NONREPETITIVE INITIAL PULSE 10 10% DUTY CYCLE 20% DUTY CYCLE 0.01 0.02 0.05 0.1 0.2 0.512510 20 50 100 200 500 1000 PW, PULSE WIDTH (ms)

Figure 7a. Maximum Surge Power 1.8–91 Volts

1000 1000 700 500 T = 25°C 500 VZ = 2.7 V

J

i RECTANGULAR Z (rms) = 0.1 IZ(dc) 300 WAVEFORM, T = 25°C f = 60 Hz200 J 200 47 V 100 100 70 27 V 50 100–200 VOLTS NONREPETITIVE 50 20 20 10 10 6.2V5522110.01 0.1 1 10 100 1000 0.1 0.2 0.512510 20 50 100 PW, PULSE WIDTH (ms) IZ, ZENER CURRENT (mA)

Figure 7b. Maximum Surge Power DO-204AH Figure 8. Effect of Zener Current on

100–200 Volts Zener Impedance 700 TJ = 25°C 1000 MAXIMUM 500 iZ(rms) = 0.1 IZ(dc) 500 IZ = 1 mA f = 60 Hz

MINIMUM

200 200 100 100 70 5 mA 50 50 20 20 mA 20 75°C 10 10 5 25°C5 150°C 2 0°C2111235710 20 30 50 70 100 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 VZ, ZENER VOLTAGE (VOLTS) VF, FORWARD VOLTAGE (VOLTS)

Figure 9. Effect of Zener Voltage on Zener Impedance Figure 10. Typical Forward Characteristics

6-15 ZZ, DYNAMIC IMPEDANCE (OHMS) Ppk , PEAK SURGE POWER (WATTS) Ppk , PEAK SURGE POWER (WATTS) I F, FORWARD CURRENT (mA) ZZ, DYNAMIC IMPEDANCE (OHMS), TA = 25° 0.1 0.0112345678910 11 12 13 14 15 16 VZ, ZENER VOLTAGE (VOLTS) Figure 11. Zener Voltage versus Zener Current — VZ = 1 thru 16 Volts TA = 25° 0.1 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 VZ, ZENER VOLTAGE (VOLTS) Figure 12. Zener Voltage versus Zener Current — VZ = 15 thru 30 Volts 6-16 IZ , ZENER CURRENT (mA) IZ , ZENER CURRENT (mA), TA = 25° 0.1 0.01 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105 VZ, ZENER VOLTAGE (VOLTS) Figure 13. Zener Voltage versus Zener Current — VZ = 30 thru 105 Volts 0.1 110 120 130 140 150 160 170 180 190 200 210 220 230 240 250 260 VZ, ZENER VOLTAGE (VOLTS) Figure 14. Zener Voltage versus Zener Current — VZ = 110 thru 220 Volts 6-17 IZ , ZENER CURRENT (mA) IZ , ZENER CURRENT (mA)]
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