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SEMICONDUCTORRURU50120 April 1995 50A, 1200V Ultrafast Diode Features Package • Ultrafast with Soft Recovery .< 125ns SINGLE LEAD JEDEC STYLE TO-218 • Operating Temperature ..+175oC ANODE • Reverse Voltage .1200V CATHODE • Avalanche Energy Rated (FLANGE) • Planar Construction Applications • Switching Power Supplies • Power Switching Circuits Symbol • General Purpose K Description The RURU50120 (TA49099) are ultrafast diodes with soft recovery characteristics (tRR < 125ns). They have low for- ward voltage drop and are silicon nitride passivated ion- implanted epitaxial planar construction. A Th...
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SEMICONDUCTORRURU50120 April 1995 50A, 1200V Ultrafast Diode

Features Package

• Ultrafast with Soft Recovery .< 125ns SINGLE LEAD JEDEC STYLE TO-218 • Operating Temperature ..+175oC

ANODE

• Reverse Voltage .1200V

CATHODE

• Avalanche Energy Rated (FLANGE) • Planar Construction

Applications

• Switching Power Supplies • Power Switching Circuits Symbol • General Purpose

K Description

The RURU50120 (TA49099) are ultrafast diodes with soft recovery characteristics (tRR < 125ns). They have low for- ward voltage drop and are silicon nitride passivated ion- implanted epitaxial planar construction. A These devices are intended for use as freewheeling/clamp- ing diodes and rectifiers in a variety of switching power sup- plies and other power switching applications. Their low stored charge and ultrafast soft recovery minimize ringing and electrical noise in many power switching circuits reduc- ing power loss in the switching transistors. PACKAGING AVAILABILITY PART NUMBER PACKAGE BRAND RURU50120 TO-218 RURU50120 NOTE: When ordering, use the entire part number.

Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified

RURU50120 UNITS Peak Repetitive Reverse Voltage .VRRM 1200 V Working Peak Reverse Voltage .VRWM 1200 V DC Blocking Voltage.VR 1200 V Average Rectified Forward Current .IF(AV) 50 A (TC = +85 oC) Repetitive Peak Surge Current.IFSM 100 A (Square Wave, 20kHz) Nonrepetitive Peak Surge Current .IFSM 500 A (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation .PD 170 W Avalanche Energy (L = 40mH) .EAVL 50 mj Operating and Storage Temperature .TSTG, ToJ-65 to +175 C Copyright © Harris Corporation 1995 File Number 3741.1 5-105,

Specifications RURU50120 Electrical Specifications T oC = +25 C, Unless Otherwise Specified

SYMBOL TEST CONDITION MIN TYP MAX UNITS VF IF = 50A, ToC= +25 C - - 2.1 V IF = 50A, ToC= +150 C - - 1.9 V IR VR = 1200V, T = +25oCC- - 500 µA VR = 1200V, T = +150oCC- - 2.0 mA tRR IF = 1A, dIF/dt = 100A/µs - - 125 ns IF = 50A, dIF/dt = 100A/µs - - 200 ns tA IF = 50A, dIF/dt = 100A/µs - 95 - ns tB IF = 50A, dIF/dt = 100A/µs - 70 - ns QRR IF = 50A, dIF/dt = 100A/µs - 800 - nC CJ VR = 10V, IF = 0A - 160 - pF RθJC - - 0.9 oC/W

DEFINITIONS

VF = Instantaneous forward voltage (pw = 300µs, D = 2%). IR = Instantaneous reverse current. tRR = Reverse recovery time (See Figure 2), summation of tA + tB. tA = Time to reach peak reverse current (See Figure 2). tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2). RθJC = Thermal resistance junction to case. EAVL = Controlled avalanche energy (See Figures 10 and 11). pw = pulse width. D = duty cycle. V1 AMPLITUDE CONTROLS IF +V3 V2 AMPLITUDE CONTROLS dIF/dt t ≥ 5t L1 = SELF INDUCTANCE OFR1A(MAX) 4 R1 + L t2 > tRRLOOP Q t3 > 01 dIQ F2LttIRR+V 1 ≤ A(MIN)1 F dt R tA tB4 1000tLLOOP2 R 0.25 It1 2 DUT

RM IRM

Q3 Q4VtR3 C1 R4

V

-V RM2 -VR 43 FIGURE 1. tRR TEST CIRCUIT FIGURE 2. tRR WAVEFORMS AND DEFINITIONS 5-106,

Typical Performance Curves

250 1000 +175oC +100oC +100oC 10 +175oC +25oC 10 1 0.1 +25oC 1 0.01 0 0.5 1 1.5 2 2.530200 400 600 800 1000 1200 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE VOLTAGE DROP VOLTAGE TC = +25 oC TC = +100 oC 200 500 tA 200 tB tB 100 tA001510 501510 50 IF , FORWARD CURRENT (A) IF , FORWARD CURRENT (A) FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD FIGURE 6. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +25oC CURRENT AT +100oC TC = +175 oC 750 50

DC

600 40 SQ. WAVE 450 30 tRR 300 tB 20 150 tA 10001510 50 25 50 75 100 125 150 175 IF , FORWARD CURRENT (A) TC, CASE TEMPERATURE ( oC) FIGURE 7. TYPICAL tRR, tA AND tB CURVES vs FORWARD FIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES CURRENT AT +175oC 5-107 t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) IF, FORWARD CURRENT (A) I , AVERAGE FORWARD CURRENT (A) t, RECOVERY TIMES (ns) IR, REVERSE CURRENT (µA)F(AV),

Typical Performance Curves (Continued)

0 50 100 150 200 VR, REVERSE VOLTAGE (V) FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE IMAX = 1A L = 40mH R < 0.1Ω EAVL = 1/2LI 2 [VAVL/(VAVL - VDD)] Q1 AND Q2 ARE 1000V MOSFETsLQR1 + 130Ω 1MΩ

DUT Q

12V 2 VAVL

CURRENT

130Ω SENSE IL ILIV- 12V t0 t1 t2 t FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVE-

FORMS

5-108 CJ, JUNCTION CAPACITANCE (pF)]
15

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