Download: Advanced Power MOSFET IRF640A FEATURES BVDSS = 200VR= 0.18 Ω

Advanced Power MOSFET IRF640A FEATURES BVDSS = 200 V Avalanche Rugged Technology R = 0.18 Ω Rugged Gate Oxide Technology DS(on) Lower Input Capacitance ID = 18 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V TO-220 Lower RDS(ON) : 0.144 Ω(Typ.) 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage 200 V Continuous Drain Current (ToIC=25 C) 18 D AContinuous Drain Current (TC=100 oC) 11.4 IDM Drain Current-Pulsed O1 72 A VGS Gate-to-Source Voltage +_ 30 V EAS Single Pulsed Avalanche ...
Author: Filibert Took Shared: 8/19/19
Downloads: 362 Views: 4122

Content

Advanced Power MOSFET IRF640A FEATURES BVDSS = 200 V

Avalanche Rugged Technology

R = 0.18 Ω

Rugged Gate Oxide Technology DS(on) Lower Input Capacitance ID = 18 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V TO-220 Lower RDS(ON) : 0.144 Ω(Typ.) 1.Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol Characteristic Value Units VDSS Drain-to-Source Voltage 200 V Continuous Drain Current (ToIC=25 C) 18 D AContinuous Drain Current (TC=100 oC) 11.4 IDM Drain Current-Pulsed O1 72 A VGS Gate-to-Source Voltage +_ 30 V EAS Single Pulsed Avalanche Energy O2 216 mJ IAR Avalanche Current O1 18 A EAR Repetitive Avalanche Energy O1 13.9 mJ dv/dt Peak Diode Recovery dv/dt O3 5.0 V/ns Total Power Dissipation (T oC=25 C) 139 WPD Linear Derating Factor 1.11 W/oC Operating Junction and TJ , TSTG - 55 to +150Storage Temperature Range oC Maximum Lead Temp. for Soldering TL 300Purposes, 1/8 “ from case for 5-seconds

Thermal Resistance

Symbol Characteristic Typ. Max. Units RθJC Junction-to-Case - 0.9 R oθCS Case-to-Sink 0.5 - C/W RθJA Junction-to-Ambient - 62.5 Rev. B ©1999 Fairchild Semiconductor Corporation,

Electrical Characteristics (TC=25o C unless otherwise specified)

Symbol Characteristic Min. Typ. Max. Units Test Condition BVDSS Drain-Source Breakdown Voltage 200 - - V VGS=0V,ID=250µA∆ BV/∆ TJ Breakdown Voltage Temp. Coeff. o - 0.26 - V/ C ID=250µASee Fig 7 VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS=5V,ID=250µ A Gate-Source Leakage , Forward I - - 100 VGS=30V GSS nA Gate-Source Leakage , Reverse - - -100 VGS=-30V - - 10 VDS=200VIDSS Drain-to-Source Leakage CurrentµA- - 100 VDS=160V,TC=125 oC Static Drain-Source RDS(on) - - 0.18 V =10V,IOn-State Resistance Ω GS D =9A O4 gfs Forward Transconductance - 9.61 - Ω VDS=40V,ID=9A O4 Ciss Input Capacitance - 1160 1500 V =0V,V =25V,f =1MHz Coss Output Capacitance - 210 250 GS DS pF See Fig 5 Crss Reverse Transfer Capacitance - 94 110 td(on) Turn-On Delay Time - 17 40 VDD=100V,I =18A,tr Rise Time - 16 40

D

t ns R =9.1 Ω d(off) Turn-Off Delay Time - 48 110

G

See Fig 13 tf Fall Time - 24 60 O4 O5 Qg Total Gate Charge - 44 58 VDS=160V,VGS=10V, Qgs Gate-Source Charge - 10.4 - nC ID=18AQ45gd Gate-Drain(“Miller”) Charge - 27.1 - See Fig 6 & Fig 12OO

Source-Drain Diode Ratings and Characteristics

Symbol Characteristic Min. Typ. Max. Units Test Condition IS Continuous Source Current - - 18 Integral reverse pn-diodeA ISM Pulsed-Source Current O1 - - 72 in the MOSFET VSD Diode Forward Voltage O4 - - 1.5 V TJ=25oC,IS=18A,VGS=0V trr Reverse Recovery Time - 195 - ns TJ=25oC,IF=18A Qrr Reverse Recovery Charge - 1.35 - µ C diF/dt=100A/µ s O4 Notes ;

O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature O2 L=1mH, IAS=18A, VDD=50V, RG=27Ω, Starting TJ =25 oC O3 ISD _< 18A, di/dt _< 260A/ µ s, V DD <_ BVDSS , Starting TJ =25o C O4 Pulse Test : Pulse Width = 250 µ s, Duty Cycle _< 2% O5 Essentially Independent of Operating Temperature

,

N-CHANNEL POWER MOSFET IRF640A

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

VGS

Top : 15V10V8.0 V 7.0 V 101 6.0 V 101 5.5 V 5.0 V Bottom : 4.5 V 150 oC 100 100 25 oC @ Notes : 1. VGS = 0 V @ Notes : 2. VDS = 40 V 1. 250 µs Pulse Test - 55 oC 3. 250 µs Pulse Test 2. TC = 25 oC 10-1 -1 10-1 100 101246810 VDS , Drain-Source Voltage [V] VGS , Gate-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current Fig 4. Source-Drain Diode Forward Voltage 0.4 VGS = 10 V 0.3 0.2 VGS = 20 V0.1 @ Notes : o 1. V150 C GS = 0 V @ Note : TJ = 25 oC 25 oC 2. 250 µs Pulse Test 0.0 10-1 0 20 40 60 80 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 ID , Drain Current [A] VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage Ciss= Cgs+ Cgd (Cds= shorted ) Coss= Cds+ Cgd VDS = 40VC= C 10rss gd 1500 C VDS = 100 Viss VDS = 160VCoss @ Notes : 5 1. VGS = 0 V 500 2. f = 1 MHzC rss @ Notes : ID = 18.0A00100 101 0 10 20 30 40 50 VDS , Drain-Source Voltage [V] QG , Total Gate Charge [nC] R , [Ω] Capacitance [pF] DS(on) Drain-Source On-Resistance ID , Drain Current [A] I , Reverse Drain Current [A] ID , Drain Current [A]VGS , Gate-Source Voltage [V] DR,

Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature

1.2 3.0 2.5 1.1 2.0 1.0 1.5 1.0 0.9 @ Notes : @ Notes : 1. VGS = 0 V 1. V = 10 V0.5 GS 2. I = 250 µA 2. ID = 9.0 AD 0.8 0.0 -75 -50 -25 0 25 50 75 100 125 150 175 -75 -50 -25 0 25 50 75 100 125 150 175

TJ , Junction Temperature [

oC] T oJ , Junction Temperature [ C]

Fig 9. Max. Safe Operating Area Fig 10. Max. Drain Current vs. Case Temperature

Operation in This Area is Limited byR2DS(on)10 100 µs 1 ms 101 10 ms

DC

100 @ Notes : 1. TC = 25 oC 5 2. TJ = 150 oC 3. Single Pulse 10-1 0 100 101 102 25 50 75 100 125 150

VDS , Drain-Source Voltage [V] Tc , Case Temperature [

oC]

Fig 11. Thermal Response

D=0.5 0.2 @ Notes : -1 1. Z (t)=0.9 oC/W Max. 10 0.1 θJ C 2. Duty Factor, D=t1/t2 0.05 3. TJM-TC=PDM*Z JC(t)θ 0.02

P

0.01 DM single pulse t1 10-2 t2 10-5 10-4 10-3 10-2 10-1 100 101 t1 , Square Wave Pulse Duration [sec]

BVDSS , (Normalized) ID , Drain Current [A] Drain-Source Breakdown Voltage Z (t) , Thermal Response

θJC

RDS(on) , (Normalized) I , Drain Current [A] Drain-Source On-ResistanceD

,

IRF640A N-CHANNEL POWER MOSFET

Fig 12. Gate Charge Test Circuit & Waveform “ Current Regulator ” V Same Type GS 50KΩ as DUT Qg 12V 200nF 300nF 10V

VDS

V Q QGS gs gd

DUT

3mA R1 R2 Current Sampling (IG) Current Sampling (I Charge D) Resistor Resistor Fig 13. Resistive Switching Test Circuit & Waveforms

RL

Vout Vout 90% V Vin DD ( 0.5 rated VDS )

RG

DUT 10% Vin 10V td(on) tr td(off) tf t on t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms 1 BVDSSLL EAS = - L 2L IAS - V 2 BVDS DSS - VDD Vary tp to obtain I BVD DSS required peak ID IAS RG C VDD ID (t) DUT VDD VDS (t) 10VtptpTime, Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT +

VDS

- I S

L

V DriverGS R Same Type G as DUT VDD VGS • dv/dt controlled by “RG” • IS controlled by Duty Factor “D” V Gate Pulse WidthGS D = -Gate Pulse Period ( Driver ) 10V IFM , Body Diode Forward CurrentIS( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS

( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop,

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ ISOPLANAR™ UHC™ CoolFET™ MICROWIRE™ VCX™ CROSSVOLT™ POP™ E2CMOSTM PowerTrench™ FACT™ QS™ FACT Quiet Series™ Quiet Series™ FAST® SuperSOT™-3 FASTr™ SuperSOT™-6 GTO™ SuperSOT™-8 HiSeC™ TinyLogic™ DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or This datasheet contains the design specifications for In Design product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.]
15

Similar documents

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
PD-91277A IRFZ46N HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 16.5mΩ Fast Switching G Fully Avalanche Rated ID = 53A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize
Electrical Characteristics TC = 25°C unless otherwise noted
October 2001 IRF630B/IRFS630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 9.0A, 200V, RDS(on) = 0.4Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 22 nC) planar, DMOS technology. • Low Crss
PRELIMINARY IRG4PC30KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features C Benefits
PD -9.1587 PRELIMINARY IRG4PC30KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features C • High short circuit rating optimized for motor control, VCES = 600V tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction loss
PRELIMINARY IRG4PC40KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features C E
PD -9.1584 PRELIMINARY IRG4PC40KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features C • Short Circuit Rated UltraFast: Optimized for VCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • G
IRGBC40F
PD - 9.691A IRGBC40F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency ( 1 to VCES = 600V 10kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ≤ 2.0V G @VGE = 15V, IC = 27A E n-channel Desc
HEXFET® Power MOSFET Description
HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 4.0mΩ Fast Switching G Fully Avalanche Rated ID = 160A S Description Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced
IRGPF30F
PD - 9.1026 IRGPF30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to VCES = 900V 10kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ≤ 3.7V G @VGE = 15V, IC = 11A E n-channel Descr
DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07
DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 FEATURES PINNING - TO-92 • High speed switching PIN SYMBOL DESCRIPTION • Interchangeability of drain and source
DISCRETE SEMICONDUCTORS DATA SHEET Line-ups RF Power Transistors for UHF 1996 Feb 12 File under Discrete Semiconductors, SC08b
DISCRETE SEMICONDUCTORS DATA SHEET Line-ups RF Power Transistors for UHF 1996 Feb 12 File under Discrete Semiconductors, SC08b INTRODUCTION In this section, we present information on recommended circuit line-ups in the main RF power application areas. A comprehensive range of output power levels is
Typical Characteristics
KSP94 High Voltage Transistor • High Collector-Emitter Voltage: VCEO= -400V • Low Collector-Emitter Saturation Voltage • Complement to KSP44 1 TO-92 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units V
DISCRETE SEMICONDUCTORS DATA SHEET J308; J309; J310 N-channel silicon field-effect transistors Product specification 1996 Jul 30 Supersedes data of April 1995
DISCRETE SEMICONDUCTORS DATA SHEET J308; J309; J310 N-channel silicon field-effect transistors Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 FEATURES PINNING - TO-92 • Low noise PIN SYMBOL DESCRIPTION • Interchangeability of drain and source
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC223/D Silicon Bidirectional Triode Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC223/D Silicon Bidirectional Triode Thyristors .designed primarily for full-wave ac control applications such as lighting sysjtems, heater controls, motor controls and power supplies; or wherever full-wave silicon- gate-controlled devices are nee
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC218FP/D Silicon Bidirectional Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC218FP/D Silicon Bidirectional Thyristors ISOLATED TRIACs .designed primarily for full-wave ac control applications, such as light dimmers, THYRISTORS motor controls, heating controls and power supplies. 8 AMPERES RMS • Blocking Voltage to 800 Vo
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC212FP/D Silicon Bidirectional Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC212FP/D Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as light dimmers, ISOLATED TRIACs motor controls, heating controls and power supplies; or wherever full-wave silicon THYRISTORS gate control
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC218/D Silicon Bidirectional Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC218/D Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies. TRIACs • Blocking Voltage to 800 Volts 8 AMPERES RMS • Glass Passivated
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as light dimmers,
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors swi
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC210FP/D Silicon Bidirectional Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC210FP/D Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as light dimmers, ISOLATED TRIACs motor controls, heating controls and power supplies; or wherever full-wave silicon THYRISTORS gate control
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as light dimmers,
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors swi
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC15S/D Silicon Bidirectional Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC15S/D Silicon Bidirectional Thyristors Designed for industrial and consumer applications for full wave control of ac TRIACS loads such as appliance controls, heater controls, motor controls, and other 15 AMPERES RMS power switching applications.
SEMICONDUCTOR TECHNICAL DATA TRIACS 15 AMPERES RMS 400 thru 800 Designed for high performance full-wave ac control applications where high VOLTS noise immunity and high commutating di/dt are required.
SEMICONDUCTOR TECHNICAL DATA *Motorola preferred devices TRIACS 15 AMPERES RMS 400 thru 800 Designed for high performance full-wave ac control applications where high VOLTS noise immunity and high commutating di/dt are required. • Blocking Voltage to 800 Volts • On-State Current Rating of 15 Amperes
SEMICONDUCTOR TECHNICAL DATA *Motorola preferred devices TRIACS Designed for high performance full-wave ac control applications where high 15 AMPERES RMS
SEMICONDUCTOR TECHNICAL DATA *Motorola preferred devices TRIACS Designed for high performance full-wave ac control applications where high 15 AMPERES RMS noise immunity and high commutating di/dt are required. 400 thru 800 • Blocking Voltage to 800 Volts VOLTS • On-State Current Rating of 15 Amperes
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as solid-state relays,
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristor
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Triode Thyristors .designed primarily for full-wave ac control applications, such as solid-state relays,
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Triode Thyristors .designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type th
*Motorola preferred devices Silicon Bidirectional Thyristors TRIACS12 AMPERES RMS
SEMICONDUCTOR TECHNICAL DATA *Motorola preferred devices Silicon Bidirectional Thyristors TRIACS12 AMPERES RMS 400 thru 800 Designed for high performance full–wave ac control applications where high VOLTS noise immunity and commutating di/dt are required. • Blocking Voltage to 800 Volts • On-State C
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and other light industrial or consumer applications. Supplied in surface mount package for use in
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors *Motorola preferred devices Designed for use in solid state relays, MPU interface, TTL logic and other light industrial or consumer applications. Supplied in surface mount package for use in automated manufacturing. TRIAC • Sensitive Gate
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR8/D 8 AMPERES RMS
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR8/D *Motorola preferred devices SCRs 8 AMPERES RMS 400 thru 800 Designed primarily for half–wave ac control applications, such as motor VOLTS controls, heating controls, and power supplies; or wherever half–wave, silicon gate–controlled devices
Order this document *Motorola preferred devices SCRs
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR8S/D *Motorola preferred devices SCRs 8 AMPERES RMS Designed primarily for half–wave ac control applications, such as motor 400 thru 800 controls, heating controls, and power supplies; or wherever half–wave, silicon VOLTS gate–controlled devices
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR8DSM/D Reverse Blocking Thyristors Motorola Preferred Devices
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR8DSM/D Reverse Blocking Thyristors Motorola Preferred Devices Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. • Small Size SCRs • Passivated D
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR8DCM/D Reverse Blocking Thyristors Motorola Preferred Devices
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR8DCM/D Reverse Blocking Thyristors Motorola Preferred Devices Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. • Small Size SCRs • Passivated D
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR72/D Reverse Blocking Triode Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR72/D Reverse Blocking Triode Thyristors .designed for industrial and consumer applications such as temperature, light and speed control; process and remote controls; warning systems; capacitive discharge circuits and MPU interface. • Center Gate