Download: Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

PD-91277A IRFZ46N HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 16.5mΩ Fast Switching G Fully Avalanche Rated ID = 53A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a w...
Author: Filibert Took Shared: 8/19/19
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PD-91277A

IRFZ46N HEXFET® Power MOSFET

Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 16.5mΩ Fast Switching G Fully Avalanche Rated ID = 53A

S Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute TO-220AB to its wide acceptance throughout the industry.

Absolute Maximum Ratings

Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 53 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 37 A IDM Pulsed Drain Current 180 PD @TC = 25°C Power Dissipation 107 W Linear Derating Factor 0.71 W/°C VGS Gate-to-Source Voltage ± 20 V IAR Avalanche Current 28 A EAR Repetitive Avalanche Energy 11 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Thermal Resistance

Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.4 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 www.irf.com 1 07/15/02,

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 16.5 mΩ VGS = 10V, ID = 28A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 19 ––– ––– S VDS = 25V, ID = 28A IDSS Drain-to-Source Leakage Current ––– ––– 25 VDS = 55V, VGS = 0VµA ––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 V = 20V IGSS nA

GS

Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Qg Total Gate Charge ––– ––– 72 ID = 28A Qgs Gate-to-Source Charge ––– ––– 11 nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 26 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 14 ––– VDD = 28V tr Rise Time ––– 76 ––– ID = 28Ans td(off) Turn-Off Delay Time ––– 52 ––– RG = 12Ω tf Fall Time ––– 57 ––– VGS = 10V, See Fig. 10 Between lead, D LD Internal Drain Inductance ––– 4.5 ––– 6mm (0.25in.) nH from package G LS Internal Source Inductance ––– 7.5 ––– and center of die contact S Ciss Input Capacitance ––– 1696 ––– VGS = 0V Coss Output Capacitance ––– 407 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 110 ––– pF ƒ = 1.0MHz, See Fig. 5 EAS Single Pulse Avalanche Energy ––– 583 152 mJ IAS = 28A, L = 389µH

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol

D

––– ––– 53 (Body Diode) showing the

A

ISM Pulsed Source Current integral reverse G ––– ––– 180 (Body Diode) p-n junction diode. S VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 28A, VGS = 0V trr Reverse Recovery Time ––– 67 101 ns TJ = 25°C, IF = 28A Qrr Reverse Recovery Charge ––– 208 312 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by Pulse width ≤ 400µs; duty cycle ≤ 2%. max. junction temperature. ( See fig. 11 ). This is a typical value at device destruction and represents Starting TJ = 25°C, L = 389µH operation outside rated limits. RG = 25Ω, IAS = 28A. (See Figure 12). This is a calculated value limited to TJ = 175°C. ISD ≤28Adi/d≤220A/µs, VDD≤V(BR)DSS, Calculated continuous current based on maximum allowable TJ ≤ 175°C. junction temperature. Package limitation current is 39A. 2 www.irf.com, 1000 1000 VGS VGS TOP 15V TOP 15V 10V 10V 8.0V 8.0V 7.0V 7.0V 6.0V 6.0V 5.5V 5.5V 5.0V 5.0V BOTTOM4.5V BOTTOM4.5V 100 100 4.5V 10 10 4.5V 20µs PULSE WIDTH 20µs PULSE WIDTH TJ = 25 °C TJ = 175°C110.1 1 10 100 0.1 1 10 100 VD S , Drain-to-Source Voltage (V) VD S , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 3.0 ID = 53A 2.5 TJ = 25 ° C 100 2.0 TJ = 175 ° C 1.5 10 1.0 0.5VDS= 25V 20µs PULSE WIDTH VGS= 10V 1 0.045678910 11 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 VG S , Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature

www.irf.com3ID, Drain-to-Source Current (A) I D , Drain-to-Source Current (A) RD S ( o n ) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A), 3000 20 VGS = 0V, f = 1MHz ID = 28A Ciss = Cgs + Cgd , Cd s SHORTED VDS= 44V C = C 2500 rss gd VDS= 27V Coss = Cds + Cgd 16 VDS= 11V Ciss 1500 Coss Crss 500 4 FOR TEST CIRCUIT 0 SEE FIGURE13110 1000010 20 30 40 50 60 70 VD S , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage

1000 1000 OPERATION IN THIS AREA LIMITED BY R DS (on) 100 100 TJ = 175 ° C 100µsec 10 10 TJ = 25 ° C 1msec11Tc = 25°C 10msec Tj = 175°C V = 0 V Single PulseGS 0.1 0.1 0.2 0.7 1.2 1.7 2.2 1 10 100 VS D ,Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage

4 www.irf.com C, Capacitance (pF) IS D , Reverse Drain Current (A) ID, Drain-to-Source Current (A) VG S , Gate-to-Source Voltage (V), LIMITED BY PACKAGE + 40 - 30 ≤ 1 ≤ 0.1 % 10 VDS 90% 25 50 75 100 125 150 175 TC , Case Temperature ( ° C) 10%

V Fig 9. Maximum Drain Current Vs. GS

ttt

Case Temperature d(on) r d(off)

tf D = 0.50 0.20 0.10

PDM

0.1 0.05 t 0.02 SINGLE PULSE 1 0.01 (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ=P DM x ZthJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5 Thermal Response(ZthJC) ID , Drain Current (A), 15V ID TOP 11A 300 20A BOTTOM 28A L DRIVERVDS RG D.U.T + - V

DD

IAS A 20V tp 0.01Ω 150

Fig 12a. Unclamped Inductive Test Circuit 100

V(BR)DSS 50 tp 25 50 75 100 125 150 175 Starting TJ , Junction Temperature( ° C)

Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms

Current Regulator Same Type as D.U.T. 50KΩ 12V .2µF QG .3µF + V D.U.T. - DS QGS QGD

VGS

VG 3mA IG ID Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit

6 www.irf.com EA S , Single Pulse Avalanche Energy (mJ), + • • ! " • #$ %& - + - - + • + • • - "% %"' Driver Gate Drive Period D = P.W. P.W. Period

VGS=10V

D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt

VDD

Re-Applied Voltage Body Diode Forward Drop Inductor Curent Ripple ≤ 5% ISD ()*%$ +

For N-channelHEXFET® power MOSFETs

www.irf.com 7,

TO-220AB Package Outline Dimensions are shown in millimeters (inches)

10.54 (.415) 3.78 (.149) - B - 2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185) 2.62 (.103) 4.20 (.165) - A - 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 15.24 (.600) 14.84 (.584) 1.15 (.045) LEAD ASSIGNMENTS MIN 1 - GATE1232- DRAIN 3 - SOURCE 4 - DRAIN 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140) 0.93 (.037) 3X 3X 0.55 (.022)0.69 (.027) 1.40 (.055) 0.46 (.018) 3X 1.15 (.045) 0.36 (.014) MBAM2.92 (.115) 2.64 (.104) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

TO-220ABPart Marking Information

EXAMPLE : THIS IS AN IRF1010 WITH ASSEMBLY A LOT CODE 9B1M INTERNATIONAL PART NUMBER RECTIFIER IRF1010 LOGO 9246 9B 1M DATE CODE ASSEMBLY (YYWW) LOT CODE YY = YEAR WW = WEEK

Data and specifications subject to change without notice. This product has been designed and qualified for the automotive [Q101] market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.7/02

8 www.irf.com]
15

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