Download: Electrical Characteristics TC = 25°C unless otherwise noted

October 2001 IRF630B/IRFS630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 9.0A, 200V, RDS(on) = 0.4Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 22 nC) planar, DMOS technology. • Low Crss ( typical 15 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices a...
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October 2001 IRF630B/IRFS630B

200V N-Channel MOSFET

General Description Features

These N-Channel enhancement mode power field effect • 9.0A, 200V, RDS(on) = 0.4Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 22 nC) planar, DMOS technology. • Low Crss ( typical 15 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.

D G

G TO-220 TO-220FD S IRF SeriesGDSIRFS Series

S Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol Parameter IRF630B IRFS630B Units VDSS Drain-Source Voltage 200 V ID Drain Current - Continuous (TC = 25°C) 9.0 9.0 * A - Continuous (TC = 100°C) 5.7 5.7 * A IDM Drain Current - Pulsed (Note 1) 36 36 * A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 160 mJ IAR Avalanche Current (Note 1) 9.0 A EAR Repetitive Avalanche Energy (Note 1) 7.2 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns PD Power Dissipation (TC = 25°C) 72 38 W - Derate above 25°C 0.57 0.3 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C T Maximum lead temperature for soldering purposes,L 300 °C1/8" from case for 5 seconds * Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol Parameter IRF630B IRFS630B Units RθJC Thermal Resistance, Junction-to-Case Max. 1.74 3.33 °C/W RθCS Thermal Resistance, Case-to-Sink Typ. 0.5 - °C/W RθJA Thermal Resistance, Junction-to-Ambient Max. 62.5 62.5 °C/W,

Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 200 - - V ∆BVDSS Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C/ ∆TJ Coefficient - 0.2 - V/°C IDSS V = 200 V, V = 0 V - - 10 µAZero Gate Voltage Drain Current DS GS VDS = 160 V, TC = 125°C - - 100 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V - - 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V - - -100 nA

On Characteristics

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 - 4.0 V RDS(on) Static Drain-Source VGS = 10 V, ID = 4.5 A On-Resistance - 0.34 0.4 Ω gFS Forward Transconductance VDS = 40 V, ID = 4.5 A ( N ote 4) - 7.05 - S

Dynamic Characteristics

Ciss Input Capacitance VDS = 25 V, V = 0 V, - 550 720 pFGS Coss Output Capacitance f = 1.0 MHz - 75 95 pF Crss Reverse Transfer Capacitance - 15 20 pF

Switching Characteristics

td(on) Turn-On Delay Time V = 100 V, I = 9.0 A, - 11 30 ns t DD Dr Turn-On Rise Time R = 25 Ω - 70 150 nsG td(off) Turn-Off Delay Time - 60 130 ns t Turn-Off Fall Time ( N o te 4, 5)f - 65 140 ns Qg Total Gate Charge VDS = 160 V, ID = 9.0 A, - 22 29 nC Qgs Gate-Source Charge VGS = 10 V - 3.6 - nC Qgd Gate-Drain Charge ( N ote 4, 5) - 10.2 - nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current - - 9.0 A ISM Maximum Pulsed Drain-Source Diode Forward Current - - 36 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 9.0 A - - 1.5 V trr Reverse Recovery Time VGS = 0 V, IS = 9.0 A, - 140 - ns Qrr Reverse Recovery Charge dIF / dt = 100 A/µs (Note 4) - 0.87 - µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 3mH, IAS = 9.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 9.0A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature,

Typical Characteristics VGS

Top : 15.0 V 10.0 V 8.0V17.0 V10 1 6.5 V 10 6.0 V 5.5 V Bottom : 5.0 V 150oC 100 100 25oC ※ Notes : -55 oC ※ Notes : 1. 250μ s Pulse Test 1. VDS = 40V 2. T = 25℃ 2. 250μ s Pulse TestC -1 10-110 10-1 100 101246810 V , Drain-Source Voltage [V] VGS, Gate-Source Voltage [V]DS

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

2.5 2.0 101 VGS = 10V 1.5 VGS = 20V 1.0 100 150℃ 25℃ 0.5 ※ Notes : 1. VGS = 0V ※ Note : T = 25℃ 2. 250μ s Pulse TestJ 0.0 10-10 5 10 15 20 25 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ID, Drain Current [A] VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation with Source Current

and Temperature 1500 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VDS = 40V VDS = 100V VDS = 160V 1000 8 Ciss Coss 5004C※ Notes :rss 1. VGS = 0 V 2. f = 1 MHz 2 ※ Note : ID = 9.0A0010-1 100 10104812 16 20 24 V , Drain-Source Voltage [V] QG, Total Gate Charge [nC]DS

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Capacitance [pF] RDS(ON) [Ω ],Drain-Source On-Resistance ID, Drain Current [A] V , Gate-Source Voltage [V] IDR, Reverse Drain Current [A] ID, Drain Current [A]GS,

Typical Characteristics (Continued)

1.2 3.0 2.5 1.1 2.0 1.0 1.5 1.0 0.9 ※ Notes : 1. VGS = 0 V 2. ID = 250 A 0.5 ※ Notes : μ 1. VGS = 10 V 2. ID = 4.5 A 0.8 0.0 -100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200 o T, Junction Temperature [oC] TJ, Junction Temperature [ C]J

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs Temperature vs Temperature 10 Operation in This Area Operation in This Area is Limited by R is Limited by R DS(on)DS(on) 100 µs 100 s 101 1 msµ 10 ms 101 1 ms 100 ms 10 ms DC

DC

※ Notes : 10-1 ※ Notes : 1. T = 25 oC 1. TC = 25 oC

C

o 2. T = 150 o 2. TJ = 150CJC3. Single Pulse 3. Single Pulse 10-1 10-2 100 101 102 100 101 102 VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V]

Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area

for IRF630B for IRFS630B 25 50 75 100 125 150 TC, Case Temperature [℃]

Figure 10. Maximum Drain Current

vs Case Temperature BVDSS, (Normalized) ID, Drain Current [A] Drain-Source Breakdown Voltage ID, Drain Current [A] RDS(ON) , (Normalized) I , Drain Current [A] Drain-Source On-ResistanceD,

Typical Characteristics (Continued)

100D= 0 .5 ※ N o te s : 0 .2 1 . Z JC(t) = 1 .74 ℃ /WMax.θ 2 . D u ty Fa c to r, D = t1/t2 0 .1 3 . T JM - T C = PDM* Z JC(t)θ10-1 0 .050.0 2 PDM 0 .01sin g lepuls e t1 t210-210-510-410-310-210-1100101t1 , SquareWavePulseDura tio n [sec]

Figure 11-1. Transient Thermal Response Curve for IRF630B

D = 0 .51000.2 ※ N o te s : 1 . Z JC(t) = 3 .33 ℃ /WMax.θ 0 .1 2 . D u ty Fa c to r, D = t1/t2 3 . T JM - T C = PDM* Z θ JC( t) 0 .0510-1 0 .0 2 PDM 0 .0 1 t1 t2 s in g lepulse10-210-510-410-310-210-1100101t1 , SquareWavePulseDura tio n [sec]

Figure 11-2. Transient Thermal Response Curve for IRFS630B

Z (t), ThermalResponseZ(t), T h ermalResp on seθJCθJC, Gate Charge Test Circuit & Waveform

V Same Type GS

50KΩ as DUT Qg 12V 200nF 300nF 10V

V VDSGS Qgs Qgd DUT

3mA

Charge

Resistive Switching Test Circuit & Waveforms

R V L VDSDS 90% V VGS DD RG

10% 10V DUT

VGS

td(on) tr td(off) tf t on t off Unclamped Inductive Switching Test Circuit & Waveforms

L 1 BVDSS V EAS = - L I

AS -DS 2 BVDSS - VDD

BV I DSSD IAS RG VDD ID (t)

10V DUT VDD VDS (t) tptpTime, Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT + VDS

_

I SD L Driver RG

Same Type as DUT VDD

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

V GGS D = -

a-t-e- P-u-l-s-e- -W-i-d-t-h- Gate Pulse Period ( Driver ) 10V IFM , Body Diode Forward Current

I SD

( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS

( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode Forward Voltage Drop, Package Dimensions

TO-220

9.90 ±0.20 4.50 ±0.20 (8.70) +0.10 ø3.60 ±0.10 1.30 –0.05 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP 2.54TYP [2.54 ±0.20] [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters 13.08 ±0.20 9.20 ±0.20 (1.70) (1.46) 1.30 ±0.10 (1.00) (3.00) (3.70) 15.90 ±0.20 2.80 ±0.10 10.08 ±0.30 18.95MAX. (45°), Package Dimensions (Continued)

TO-220F

10.16 ±0.20 ø3.18 ±0.10 2.54 ±0.20 (7.00) (0.70) (1.00x45°) MAX1.47 0.80 ±0.10 (30°) #1 0.35 ±0.10 +0.10 0.50 –0.05 2.76 ±0.20 2.54TYP 2.54TYP [2.54 ±0.20] [2.54 ±0.20] 9.40 ±0.20 Dimensions in Millimeters 9.75 ±0.30 15.80 ±0.20 3.30 ±0.10 4.70 ±0.20 6.68 ±0.20 15.87 ±0.20,

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ FAST® OPTOLOGIC™ SMART START™ VCX™ Bottomless™ FASTr™ OPTOPLANAR™ STAR*POWER™ CoolFET™ FRFET™ PACMAN™ Stealth™ CROSSVOLT™ GlobalOptoisolator™ POP™ SuperSOT™-3 DenseTrench™ GTO™ Power247™ SuperSOT™-6 DOME™ HiSeC™ PowerTrench® SuperSOT™-8 EcoSPARK™ ISOPLANAR™ QFET™ SyncFET™ E2CMOS™ LittleFET™ QS™ TruTranslation™ EnSigna™ MicroFET™ QT Optoelectronics™ TinyLogic™ FACT™ MicroPak™ Quiet Series™ UHC™ FACT Quiet Series™ MICROWIRE™ SLIENT SWITCHER® UltraFET®

STAR*POWER is used under license

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition Advance Information Formative or In This datasheet contains the design specifications for Design product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H4]
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