Download: PRELIMINARY IRG4PC30KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features C Benefits

PD -9.1587 PRELIMINARY IRG4PC30KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features C • High short circuit rating optimized for motor control, VCES = 600V tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high VCE(on) typ. = 2.21VG switching speed • tighter parameter distribution and higher efficiency than @VGE = 15V, IC = 16A previous generations E • IGBT co-packaged with HEXFREDTM ultrafast, n -channelultrasoft recovery antiparallel diodes Benefits • Latest generation 4 IGBT's offer highest...
Author: Filibert Took Shared: 8/19/19
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PD -9.1587 PRELIMINARY IRG4PC30KD

INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features C

• High short circuit rating optimized for motor control, VCES = 600V tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high VCE(on) typ. = 2.21VG switching speed • tighter parameter distribution and higher efficiency than @VGE = 15V, IC = 16A previous generations E • IGBT co-packaged with HEXFREDTM ultrafast, n -channelultrasoft recovery antiparallel diodes

Benefits

• Latest generation 4 IGBT's offer highest power density motor controls possible • HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses • This part replaces the IRGBC30KD2 and IRGBC30MD2 products • For hints see design tip 97003 TO-247AC

Absolute Maximum Ratings

Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 28 IC @ TC = 100°C Continuous Collector Current 16 ICM Pulsed Collector Current 58 A ILM Clamped Inductive Load Current 58 IF @ TC = 100°C Diode Continuous Forward Current 12 IFM Diode Maximum Forward Current 58 tsc Short Circuit Withstand Time 10 µs VGE Gate-to-Emitter Voltage ± 20 V PD @ TC = 25°C Maximum Power Dissipation 100 W PD @ TC = 100°C Maximum Power Dissipation 42 TJ Operating Junction and -55 to +150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)

Thermal Resistance

Parameter Min. Typ. Max. Units RθJC Junction-to-Case - IGBT ––– ––– 1.2 RθJC Junction-to-Case - Diode ––– ––– 2.5 °C/W RθCS Case-to-Sink, flat, greased surface ––– 0.24 ––– RθJA Junction-to-Ambient, typical socket mount ––– ––– 40 Wt Weight ––– 6 (0.21) ––– g (oz) 5/28/97,

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.54 — V/°C VGE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage — 2.21 2.7 IC = 16A VGE = 15V — 2.88 — V IC = 28A See Fig. 2, 5 — 2.36 — IC = 16A, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -12 — mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance 5.4 8.1 — S VCE = 100V, IC = 16A ICES Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V — — 2500 VGE = 0V, VCE = 600V, TJ = 150°C VFM Diode Forward Voltage Drop — 1.4 1.7 V IC = 12A See Fig. 13 — 1.3 1.6 IC = 12A, TJ = 150°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) — 67 100 IC = 16A Qge Gate - Emitter Charge (turn-on) — 11 16 nC VCC = 400V See Fig.8 Qgc Gate - Collector Charge (turn-on) — 25 37 VGE = 15V td(on) Turn-On Delay Time — 60 — tr Rise Time — 42 — TJ = 25°Cns td(off) Turn-Off Delay Time — 160 250 IC = 16A, VCC = 480V tf Fall Time — 80 120 VGE = 15V, RG = 23Ω Eon Turn-On Switching Loss — 0.60 — Energy losses include "tail" Eoff Turn-Off Switching Loss — 0.58 — mJ and diode reverse recovery Ets Total Switching Loss — 1.18 1.6 See Fig. 9,10,14 tsc Short Circuit Withstand Time 10 — — µs VCC = 360V, TJ = 125°C VGE = 15V, RG = 10Ω , VCPK < 500V td(on) Turn-On Delay Time — 58 — TJ = 150°C, See Fig. 11,14 tr Rise Time — 42 — IC = 16A, VCC = 480Vns td(off) Turn-Off Delay Time — 210 — VGE = 15V, RG = 23Ω, tf Fall Time — 160 — Energy losses include "tail" Ets Total Switching Loss — 1.69 — mJ and diode reverse recovery LE Internal Emitter Inductance — 13 — nH Measured 5mm from package Cies Input Capacitance — 920 — VGE = 0V Coes Output Capacitance — 110 — pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance — 27 — ƒ = 1.0MHz trr Diode Reverse Recovery Time — 42 60 ns TJ = 25°C See Fig. — 80 120 TJ = 125°C 14 IF = 12A Irr Diode Peak Reverse Recovery Current — 3.5 6.0 A TJ = 25°C See Fig. — 5.6 10 TJ = 125°C 15 VR = 200V Qrr Diode Reverse Recovery Charge — 80 180 nC TJ = 25°C See Fig. — 220 600 TJ = 125°C 16 di/dt = 200Aµs di(rec)M/dt Diode Peak Rate of Fall of Recovery — 180 — A/µs TJ = 25°C See Fig. During tb — 160 — TJ = 125°C 17, 16 For both: Duty cycle: 50 % 14 TJ = 12 5°CTsink= 90 °C Gate dr ive as speci fied 12 Power Diss ipation = 24W10 Sq uare wave : 60% of rated 8 voltage6IId e al d io de s 0.1 1 10 100 f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental) 100 100 T oJ = 25 C TJ = 150oCTJ = 150oC10 10 TJ = 25oC11VGE= 15VVCC= 50V 20µs PULSE WIDTH 5µs PULSE WIDTH 0.1 0.1 1 10 5 10 15VCE, Collector-to-Emitter Voltage (V) VG E , Gate-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

I C , Collector-to-Emitter Current (A) LOAD CURRENT (A) I C , Collector-to-Emitter Current (A), 30 4.0 VG E = 15V 80 us PULSE WIDTHIC= 32A20 3.0 15IC= 16A10 2.0IC= 8 8. 0AA 0 1.0 25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( ° C) TT J , J, uJnucnticotnio Tne Tmepmepraetruarteu r(e ° C( °C) )J

Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Typical Collector-to-Emitter Voltage Temperature vs. Junction Temperature

D = 0.50 0.20 0.10 PDM 0.1 0.05 t1 0.02 t2 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ= PDMxZthJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec)

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Thermal Response (ZthJC) Maximum DC Collector Current(A) VCE, Collector-to-Emitter Voltage(V), V = 0V, f = 1MHz 20GE VCC = 400V Cies = Cge + Cgc , Cc e SHORTEDIC= 16ACres = Cgc 1200 Coes = Cce + Cgc 16

C

900 ies 12 600 8 300 Coes 4 Cres00110 100 0 20 40 60 80VCE, Collector-to-Emitter Voltage (V) Q G , Total Gate Charge (nC)

Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs. Collector-to-Emitter Voltage Gate-to-Emitter Voltage

1.50 10VCC= 480VRG= O2h3mΩVGE= 15V VG E = 15VTJ= 25 ° C VC C = 480VIC= 32A1.40IC= 16AIC= 16A1.30IC= 8 .8 0AA 1.20 1.10 1.00 0.1 0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160RGRG, G, Gaatete R Reessisistatannccee ( O( Ωhm ) ) TJ , Junction Temperature ( °C )

Fig. 9 - Typical Switching Losses vs. Gate Fig. 10 - Typical Switching Losses vs. Resistance Junction Temperature

Total Switching Losses (mJ) C, Capacitance (pF) Total Switching Losses (mJ) VG E , Gate-to-Emitter Voltage (V), 5.0 100RG= O23hΩm VG E = 20VTJ= 150 °CTJ= 112255 ° oCC VC C = 480V 4.0 VG E = 15V 3.0 2.0 1.0 SAFE OPERATING AREA 0.010816 24 32 40 1 10 100 1000IC, Collector-to-emitter Current (A) VCE, Collector-to-Emitter Voltage (V)

Fig. 11 - Typical Switching Losses vs. Fig. 12 - Turn-Off SOA Collector-to-Emitter Current

TJ = 150°C 10 TJ = 125°C TJ = 25 °C 0.4 0.8 1.2 1.6 2.0 2.4 F orwa rd Volta ge D rop - VFM(V )

Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current

Total Switching Losses (mJ) Ins tantan eou s Forw ard C urre nt - IF (A ) I C , Collector-to-Emitter Current (A), 160 100VV= 200 VR = 2 00V R TJ = 1 25°C TJ = 125 °C TJ = 2 5°C TJ = 25 °C IF = 24AIF= 24AIF= 12AIF= 12A 80 10 IF = 6.0A IF = 6.0A01100 1000 100 1000dif/d t - (A /µ s) dif/d t - (A /µs)

Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt

600 10000 VR = 20 0V VR = 200VTJ= 12 5°C TJ = 125 °CTJ= 25 °C TJ = 25 °C 400 1000 IF = 6 .0AIF= 24A IF = 12AIF= 12A 200 100 IF = 24A IF = 6.0A 0 10 100 1000 100 1000dif/d t - (A /µs) dif/d t - (A /µ s)

Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt

QRR- (nC ) trr- (n s) d i(rec )M/dt - (A /µ s) IIRRM- (A ), 9 0% V ge Same type device as D.U.T. + VgeVce 80% 430µF of Vce D.U.T. 90 % Ic Ic 1 0% V ce Ic 5% Ic td (off) tf t1 +5µ S

Fig. 18a - Test Circuit for Measurement of E off = ∫ V ce icIc d tdt

t1

ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf

t1 t2

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf

trr G ATE VO LTA GE D .U .T. trr Qrr = Ic ∫ iIdc ddt t tx 1 0% +V g +V g tx 10 % Ir r 10% V cc V cc DUT V OLTA GE V ce ANDCURR E NT V pk Irr 10% Ic V cc 9 0% Ic Ipk Ic DIODE RE COV E RY W AV E FORM S 5% Vce td(on) tr t2 E on =∫ V cee i eI cd tdt t4 t1 Erec =∫ V dd i dI cd tdt t3 t1 t2 DIOD E REVERS E RE C OV ER Y EN ER GY t3 t4

Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining E , t , t Defining Erec, ton d(on) r rr, Qrr, Irr

, V g GATE S IGN AL DE VICE UNDE R TESTCURR ENTD.U .T. VOL TA GE IN D.U.T. CURR EN T IN D1 t0 t1 t2

Figure 18e. Macro Waveforms for Figure 18a's Test Circuit

L D.U.T. 480VRL= 4XI10 00V V * C @25°Cc0- 480V 50V 60 00µ F 100 V

Figure 19. Clamped Inductive Load Test Figure 20. Pulsed Collector Current Circuit Test Circuit

,

Notes:

Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) VCC=80%(VCES), VGE=20V, L=10µH, RG= 23Ω (figure 19) Pulse width ≤ 80µs; duty factor ≤ 0.1%. Pulse width 5.0µs, single shot.

Case Outline TO-247AC

NOTES: 3.65 ( .143) - D - 5 .30 ( .209) 1 D IMENSIONS & TOLERANCIN G15.90 ( .626) 3.55 ( .140) PER ANSI Y14.5M, 1982. 15.30 ( .602) 4.70 ( .185)0.25 ( .010) MDBM2CONTR OLLINGDIM ENSION : INCH . - B - - A - 2.50 ( .089) 3 D IMENSIONS AR E SHOW N 1.50 ( .059) M ILLIM ETERS (INCH ES). 5.50 ( .217) 44CONFORMSTOJED EC OU TLINETO-247AC . 20.30 (.800) 19.70 (.775) 5.50 ( .217)2 X 4.50 ( .177) LEAD ASSIGN MENTS1- GATE1232- C OLLEC TOR 3 - EMITT ER - C - 4 - C OLLEC TOR 14.80 ( .583) 4.30 ( .170) * 14.20 ( .559) 3.70 ( .145) * LONGER LEAD ED (20m m) VER SION AVAILABLE (TO-247AD) TO OR DER ADD "-E" SUF FIX TO PART NUM BER 2.40 ( .094) 1.40 ( .056) 0.80 (.031) 2.00 ( .079) 3X 3X1.00 ( .039) 0.40 (.016) 2X 0.25 (.010) MCAS2.60 ( .102) 5.45 ( .215) 3.40 ( .133) 2.20 ( .087) 2X 3.00 ( .118) C ONFORM S TO J ED EC OUTLINE TO-247 AC (TO-3P ) D im en sion s inMill im ete rs a nd ( Inc he s)

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371

http://www.irf.com/ Data and specifications subject to change without notice. 5/97]
15

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