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PD - 9.691A IRGBC40F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency ( 1 to VCES = 600V 10kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ≤ 2.0V G @VGE = 15V, IC = 27A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-vo...
Author: Filibert Took Shared: 8/19/19
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PD - 9.691A IRGBC40F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features C

• Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency ( 1 to VCES = 600V 10kHz) See Fig. 1 for Current vs. Frequency curve

VCE(sat) ≤ 2.0V G

@VGE = 15V, IC = 27A

E

n-channel

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high- current applications.

TO-220AB Absolute Maximum Ratings

Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 49 IC @ TC = 100°C Continuous Collector Current 27 A ICM Pulsed Collector Current 200 ILM Clamped Inductive Load Current 200 VGE Gate-to-Emitter Voltage ±20 V EARV Reverse Voltage Avalanche Energy 15 mJ PD @ TC = 25°C Maximum Power Dissipation 160 W PD @ TC = 100°C Maximum Power Dissipation 65 TJ Operating Junction and -55 to +150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

Thermal Resistance

Parameter Min. Typ. Max. Units RθJC Junction-to-Case — — 0.77 RθCS Case-to-Sink, flat, greased surface — 0.50 — °C/W RθJA Junction-to-Ambient, typical socket mount — — 80 Wt Weight — 2.0 (0.07) — g (oz) Revision 0

C-63

,

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA V(BR)ECS Emitter-to-Collector Breakdown Voltage 20 — — V VGE = 0V, IC = 1.0A ∆V(BR)CES/∆TJ Temp. Coeff. of Breakdown Voltage — 0.70 — V/°C VGE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage — 1.7 2.0 IC = 27A VGE = 15V — 2.2 — V IC = 49A See Fig. 2, 5 — 1.9 — IC = 27A, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temp. Coeff. of Threshold Voltage — -12 — mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance 9.2 12 — S VCE = 100V, IC = 27A ICES Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V — — 1000 VGE = 0V, VCE = 600V, TJ = 150°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) — 59 80 IC = 27A Qge Gate - Emitter Charge (turn-on) — 8.6 10 nC VCC = 400V See Fig. 8 Qgc Gate - Collector Charge (turn-on) — 25 42 VGE = 15V td(on) Turn-On Delay Time — 26 — TJ = 25°C tr Rise Time — 37 — ns IC = 27A, VCC = 480V td(off) Turn-Off Delay Time — 240 410 VGE = 15V, RG = 10Ω tf Fall Time — 230 420 Energy losses include "tail" Eon Turn-On Switching Loss — 0.65 — Eoff Turn-Off Switching Loss — 3.0 — mJ See Fig. 9, 10, 11, 14 Ets Total Switching Loss — 3.65 6.0 td(on) Turn-On Delay Time — 28 — TJ = 150°C, tr Rise Time — 37 — ns IC = 27A, VCC = 480V td(off) Turn-Off Delay Time — 380 — VGE = 15V, RG = 10Ω tf Fall Time — 460 — Energy losses include "tail" Ets Total Switching Loss — 6.0 — mJ See Fig. 10, 14 LE Internal Emitter Inductance — 7.5 — nH Measured 5mm from package Cies Input Capacitance — 1500 — VGE = 0V Coes Output Capacitance — 190 — pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance — 20 — ƒ = 1.0MHz Notes: Repetitive rating; VGE=20V, pulse width Repetitive rating; pulse width limited Pulse width 5.0µs, limited by max. junction temperature. by maximum junction temperature. single shot. ( See fig. 13b ) VCC=80%(VCES), VGE=20V, L=10µH, Pulse width ≤ 80µs; duty factor ≤ 0.1%. RG= 10Ω, ( See fig. 13a )

C-64

, For both : Triangu larwave: Duty cycle : 50% TJ = 125°CTsink= 90°C G ate drive as spe c ified Powe r Diss ipa tion = 2 8W Clamp vo ltage: 40 80% of ra ted Square w ave: 60% of ra ted vo ltage Ideal d iodes 0.1 1 10 100 f, F re quency (kH z)

Fig. 1 - Typical Load Current vs. Frequency

(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) 1000 1000 TJ = 25°C TJ = 150°C TJ = 150°C TJ = 25°C 0.1VGE= 15VVCC= 100V 20µs PU LSE W IDTH 5µs PU LSE W ID TH 1 0.01 0.1 1 10 5 10 15 20 VC E , C ollector-to-Emitter Voltage (V ) VG E , G ate-to -E m itter Vo lta ge (V )

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics C-65

I C , Co llector-to-Em itter C urrent (A) LOAD CURRENT (A) IC , C ollector-to-Emitter C urrent (A ), 50 3.0VGE= 15V VG E = 15V 80µs P ULSE W ID TH 40IC= 54A2.5 2.0IC= 27A 1.5IC= 14A 0 1.0 25 50 75 100 125 150 -60 -40 -20 0 20 40 6080100 120 140 160 TC , C ase Tem perature (°C) TC , C ase Tem perature (°C)

Fig. 4 - Maximum Collector Current vs. Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature Case Temperature

D = 0 .50 0.20 0.1 0.10

PDM

0.05 t1 SINGLE PULSEt20.02 (THERMAL RESPONSE) N otes: 0.01 1 . D uty fac tor D = t 1 / t 2 2. Pea k TJ = PDMxZthJC+ TC0.01 0.00001 0.0001 0.001 0.01 0.1 1 10t1, R ectangular Pulse Duration (sec)

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case C-66

Therm al Response (ZthJC) M axim umDCCollector C urrent (A ) VC E , C o llector-to-Em itter Voltage (V), V 20G E = 0V, f = 1MHz C ie s = CVCE= 400Vge+ Cgc, CceSHORTEDCresI= 27A = C gc C 2500Coes= Cce+ C gc C ies 1500 Co es Cr 500 es400110 100 0 10 20 30 40 50 60VCE, C ollector-to-Em itter Voltage (V) Q g , Total G ate Charge (nC )

Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs. Collector-to-Emitter Voltage Gate-to-Emitter Voltage

4 .8 100 VC C = 480VRG= 10 Ω VG E = 15VVGE= 15V TC = 25°CVCC= 480V 4 .7IC= 27A 4 .6IC= 54AIC= 27A 4 .5IC= 14A 4 .4 4 .31010 20 30 40 50 60 -60 -40 -20 0 20 40 60 80 100 120 140 160RG, Gate Res istance (Ω ) TC , Case Tem perature (°C)

W Fig. 9 - Typical Switching Losses vs. Gate Fig. 10 - Typical Switching Losses vs. Resistance Case Temperature C-67

Tota l Sw itch ing Losses (m J) C , C apacitance (pF) To talSwitch ing Lo sses (m J) VG E , Gate-to-Em itter Voltage (V), 20 1000 RG = 10 Ω VGGEE= 20VTC= 150°C TJ = 125°CVCC= 480V 16VGE= 15V 12 SA FE O PE RA TIN G AREA0102040 60 1 10 100 1000IC, C o lle c to r- to -E m itterCurrent(A ) VC E , C o lle cto r-to -E m itterVoltage(V ) Fig. 11 - Typical Switching Losses vs. Fig. 12 - Turn-Off SOA Collector-to-Emitter Current

Refer to Section D for the following: Appendix C: Section D - page D-5 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 1 - JEDEC Outline TO-220AB Section D - page D-12

C-68TotalSwitch ingLosse s (m J) I C , C o lle c to r- to -E m itterCurrent(A )]
15

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