Download: HEXFET® Power MOSFET Description

HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 4.0mΩ Fast Switching G Fully Avalanche Rated ID = 160A S Description Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide vari...
Author: Filibert Took Shared: 8/19/19
Downloads: 940 Views: 4002

Content

HEXFET® Power MOSFET

Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 4.0mΩ Fast Switching G Fully Avalanche Rated ID = 160A

S Description

Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to TO-220AB its wide acceptance throughout the industry.

Absolute Maximum Ratings

Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 160 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 110 A IDM Pulsed Drain Current 640 PD @TC = 25°C Power Dissipation 200 W Linear Derating Factor 1.3 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 620 mJ IAR Avalanche Current 95 A EAR Repetitive Avalanche Energy 20 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Thermal Resistance

Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.75 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient (PCB Mounted) ––– 62 www.irf.com 1,

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.038 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 4.0 Ω VGS = 10V, ID = 95A m ––– ––– 5.9 VGS = 4.3V, ID = 40A VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 93 ––– ––– S VDS = 25V, ID = 95A IDSS Drain-to-Source Leakage Current ––– ––– 20 VDS = 40V, VGS = 0VµA ––– ––– 250 VDS = 32V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20VIGSS nAGate-to-Source Reverse Leakage ––– ––– -200 VGS = -20V Qg Total Gate Charge ––– ––– 140 ID = 95A Qgs Gate-to-Source Charge ––– ––– 48 nC VDS = 32V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 60 VGS = 5.0V, See Fig. 6 td(on) Turn-On Delay Time ––– 18 ––– VDD = 20V ns tr Rise Time ––– 270 ––– ID = 95A td(off) Turn-Off Delay Time ––– 38 ––– RG = 2.5Ω VGS = 4.5V tf Fall Time ––– 37 ––– RD = 0.25Ω LD Internal Drain Inductance 4.5 Between lead, D ––– ––– nH 6mm (0.25in.) LS Internal Source Inductance ––– 7.5 ––– from package

G

and center of die contact S Ciss Input Capacitance ––– 6590 ––– VGS = 0V Coss Output Capacitance ––– 1710 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 350 ––– ƒ = 1.0MHz, See Fig. 5 Coss Output Capacitance ––– 6650 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 1510 ––– VGS = 0V, VDS = 32V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 1480 ––– VGS = 0V, VDS = 0V to 32V

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol

D

––– ––– 160 (Body Diode) showing the ISM Pulsed Source Current integral reverse G ––– ––– 640 (Body Diode) p-n junction diode. S VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 95A, VGS = 0V trr Reverse Recovery Time ––– 63 94 ns TJ = 25°C, IF = 95A Qrr Reverse RecoveryCharge ––– 170 250 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by Coss eff. is a fixed capacitance that gives the same charging time max. junction temperature. ( See fig. 11). as Coss while VDS is rising from 0 to 80% VDSS. Starting TJ = 25°C, L = 0.35mH Calculated continuous current based on maximum allowable RG = 25Ω, IAS = 95A. (See Figure 12). junction temperature; for recommended current-handing of the ISD ≤ 95A, di/dt ≤ 160A/µs, VDD ≤ V(BR)DSS, package refer to Design Tip # 93-4. TJ ≤ 175°C. Calculated continuous current based on maximum allowable Pulse width ≤ 300µs; duty cycle ≤ 2%. junction temperature. Package limitation current is 75A. 2 www.irf.com, 1000 1000 VGS VGS TOP 15V TOP 15V 10V 10V 8.0V 8.0V 7.0V 7.0V 6.0V 6.0V 5.5V 5.5V 5.0V 5.0V BOTTOM 4.3V BOTTOM 4.3V4.3V 4.3V 100 100 20µs PULSE WIDTH 20µs PULSE WIDTHTJ= 25 °CTJ= 175 °C 10 10 0.1 1 10 100 0.1 1 10 100 VD S , Drain-to-Source Voltage (V) VD S , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 2.5 ID = 160A TJ = 25 ° C 2.0 TJ = 175 ° C 1.5 1.0 0.5VDS= 15V 20µs PULSE WIDTH VGS= 10V 100 0.0 4.0 5.0 6.0 7.0 8.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature

www.irf.com3ID, Drain-to-Source Current (A) I D , Drain-to-Source Current (A) RDS( o n ) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A), 10000 20 VGS = 0V, f = 1MHz ID = 95A Ciss = Cgs + Cgd , Cd s SHORTED C = C VDS = 32Vrss gdCV= 20V8000 oss = Cds + Cgd 16 DS Ciss 6000 12 4000 8 2000 Coss 4 FOR TEST CIRCUIT Crss SEE FIGURE1300110 100 0 100 200 300 400 500VDS, Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage

1000 10000 OPERATION IN THIS AREA LIMITED BY RDS(on) 100 1000 TJ = 175 ° C 10us 100us 10 100 TJ = 25 ° C 1ms TC = 25 ° C TJ = 175 ° C 10msVGS= 0 V Single Pulse 1 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 1 10 100 VS D ,Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage

4 www.irf.com IS D , Reverse Drain Current (A) C, Capacitance (pF) II ,, DDrraaiinn CCuurrrreenntt ((AA)) VG S , Gate-to-Source Voltage (V)D, LIMITED BY PACKAGE + - 80 ≤ 1 ≤ 0.1 %

VDS

90% 25 50 75 100 125 150 175TC, Case Temperature ( ° C) 10%

V Fig 9. Maximum Drain Current Vs. GS

ttt

Case Temperature d(on) r d(off)

tf D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM 0.01t1t2Notes: 1. Duty factor D = t 1 / t 2 2. PeakTJ= P DMxZthJC + T C 0.001 0.00001 0.0001 0.001 0.01 0.11t1, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5 Thermal Response (ZthJC) ID , Drain Current (A), 15V 1500 ID TOP 49A 101A L DRIVER 1200 BOTTOM 121A VDS RG D.U.T + 900 - VDD IAS A 20V tp 0.01Ω

Fig 12a. Unclamped Inductive Test Circuit

V(BR)DSS tp 300 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( ° C)

IAS Fig 12c. Maximum Avalanche Energy Fig 12b. Unclamped Inductive Waveforms Vs. Drain Current

Current Regulator Same Type as D.U.T.

QG

50KΩ 12V .2µF QGS QGD .3µF +

V

D.U.T. - DS

VG VGS

3mA Charge IG ID Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit

6 www.irf.com EA S , Single Pulse Avalanche Energy (mJ), + !"! • "#$ • %& • "#"'( ! )* - + - - + • + • • - &) )&!+ Driver Gate Drive Period D = P.W. P.W. Period

VGS=10V

D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt

VDD

Re-Applied Voltage Body Diode Forward Drop Inductor Curent Ripple ≤ 5% ISD ,- )"(".

For N-channelHEXFET® power MOSFETs

www.irf.com 7,

Package Outline TO-220AB Dimensions are shown in millimeters (inches)

10.54 (.415) 3.78 (.149) - B - 2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185) 2.62 (.103) 4.20 (.165) - A - 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 15.24 (.600) 14.84 (.584) 1.15 (.045) LEAD ASSIGNMENTS MIN 1 - GATE1232- DRAIN 3 - SOURCE 4 - DRAIN 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140) 0.93 (.037) 3X 0.55 (.022)0.69 (.027) 3X 1.40 (.055) 0.46 (.018) 3X 1.15 (.045) 0.36 (.014) MBAM2.92 (.115) 2.64 (.104) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

EXAMPLE : THIS IS AN IRF1010 WITH ASSEMBLY A LOT CODE 9B1M INTERNATIONAL PART NUMBER RECTIFIER IRF1010 LOGO 9246

9B 1M DATE CODE

ASSEMBLY (YYWW) LOT CODE YY = YEAR WW = WEEK Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/02

8 www.irf.com]
15

Similar documents

IRGPF30F
PD - 9.1026 IRGPF30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to VCES = 900V 10kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ≤ 3.7V G @VGE = 15V, IC = 11A E n-channel Descr
DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07
DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 FEATURES PINNING - TO-92 • High speed switching PIN SYMBOL DESCRIPTION • Interchangeability of drain and source
DISCRETE SEMICONDUCTORS DATA SHEET Line-ups RF Power Transistors for UHF 1996 Feb 12 File under Discrete Semiconductors, SC08b
DISCRETE SEMICONDUCTORS DATA SHEET Line-ups RF Power Transistors for UHF 1996 Feb 12 File under Discrete Semiconductors, SC08b INTRODUCTION In this section, we present information on recommended circuit line-ups in the main RF power application areas. A comprehensive range of output power levels is
Typical Characteristics
KSP94 High Voltage Transistor • High Collector-Emitter Voltage: VCEO= -400V • Low Collector-Emitter Saturation Voltage • Complement to KSP44 1 TO-92 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units V
DISCRETE SEMICONDUCTORS DATA SHEET J308; J309; J310 N-channel silicon field-effect transistors Product specification 1996 Jul 30 Supersedes data of April 1995
DISCRETE SEMICONDUCTORS DATA SHEET J308; J309; J310 N-channel silicon field-effect transistors Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 FEATURES PINNING - TO-92 • Low noise PIN SYMBOL DESCRIPTION • Interchangeability of drain and source
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC223/D Silicon Bidirectional Triode Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC223/D Silicon Bidirectional Triode Thyristors .designed primarily for full-wave ac control applications such as lighting sysjtems, heater controls, motor controls and power supplies; or wherever full-wave silicon- gate-controlled devices are nee
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC218FP/D Silicon Bidirectional Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC218FP/D Silicon Bidirectional Thyristors ISOLATED TRIACs .designed primarily for full-wave ac control applications, such as light dimmers, THYRISTORS motor controls, heating controls and power supplies. 8 AMPERES RMS • Blocking Voltage to 800 Vo
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC212FP/D Silicon Bidirectional Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC212FP/D Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as light dimmers, ISOLATED TRIACs motor controls, heating controls and power supplies; or wherever full-wave silicon THYRISTORS gate control
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC218/D Silicon Bidirectional Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC218/D Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies. TRIACs • Blocking Voltage to 800 Volts 8 AMPERES RMS • Glass Passivated
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as light dimmers,
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors swi
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC210FP/D Silicon Bidirectional Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC210FP/D Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as light dimmers, ISOLATED TRIACs motor controls, heating controls and power supplies; or wherever full-wave silicon THYRISTORS gate control
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as light dimmers,
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors swi
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC15S/D Silicon Bidirectional Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC15S/D Silicon Bidirectional Thyristors Designed for industrial and consumer applications for full wave control of ac TRIACS loads such as appliance controls, heater controls, motor controls, and other 15 AMPERES RMS power switching applications.
SEMICONDUCTOR TECHNICAL DATA TRIACS 15 AMPERES RMS 400 thru 800 Designed for high performance full-wave ac control applications where high VOLTS noise immunity and high commutating di/dt are required.
SEMICONDUCTOR TECHNICAL DATA *Motorola preferred devices TRIACS 15 AMPERES RMS 400 thru 800 Designed for high performance full-wave ac control applications where high VOLTS noise immunity and high commutating di/dt are required. • Blocking Voltage to 800 Volts • On-State Current Rating of 15 Amperes
SEMICONDUCTOR TECHNICAL DATA *Motorola preferred devices TRIACS Designed for high performance full-wave ac control applications where high 15 AMPERES RMS
SEMICONDUCTOR TECHNICAL DATA *Motorola preferred devices TRIACS Designed for high performance full-wave ac control applications where high 15 AMPERES RMS noise immunity and high commutating di/dt are required. 400 thru 800 • Blocking Voltage to 800 Volts VOLTS • On-State Current Rating of 15 Amperes
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as solid-state relays,
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristor
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Triode Thyristors .designed primarily for full-wave ac control applications, such as solid-state relays,
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Triode Thyristors .designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type th
*Motorola preferred devices Silicon Bidirectional Thyristors TRIACS12 AMPERES RMS
SEMICONDUCTOR TECHNICAL DATA *Motorola preferred devices Silicon Bidirectional Thyristors TRIACS12 AMPERES RMS 400 thru 800 Designed for high performance full–wave ac control applications where high VOLTS noise immunity and commutating di/dt are required. • Blocking Voltage to 800 Volts • On-State C
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and other light industrial or consumer applications. Supplied in surface mount package for use in
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors *Motorola preferred devices Designed for use in solid state relays, MPU interface, TTL logic and other light industrial or consumer applications. Supplied in surface mount package for use in automated manufacturing. TRIAC • Sensitive Gate
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR8/D 8 AMPERES RMS
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR8/D *Motorola preferred devices SCRs 8 AMPERES RMS 400 thru 800 Designed primarily for half–wave ac control applications, such as motor VOLTS controls, heating controls, and power supplies; or wherever half–wave, silicon gate–controlled devices
Order this document *Motorola preferred devices SCRs
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR8S/D *Motorola preferred devices SCRs 8 AMPERES RMS Designed primarily for half–wave ac control applications, such as motor 400 thru 800 controls, heating controls, and power supplies; or wherever half–wave, silicon VOLTS gate–controlled devices
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR8DSM/D Reverse Blocking Thyristors Motorola Preferred Devices
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR8DSM/D Reverse Blocking Thyristors Motorola Preferred Devices Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. • Small Size SCRs • Passivated D
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR8DCM/D Reverse Blocking Thyristors Motorola Preferred Devices
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR8DCM/D Reverse Blocking Thyristors Motorola Preferred Devices Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. • Small Size SCRs • Passivated D
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR72/D Reverse Blocking Triode Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR72/D Reverse Blocking Triode Thyristors .designed for industrial and consumer applications such as temperature, light and speed control; process and remote controls; warning systems; capacitive discharge circuits and MPU interface. • Center Gate
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR703A/D Reverse Blocking Triode Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR703A/D Reverse Blocking Triode Thyristors .PNPN devices designed for high volume, low cost consumer applications such as *Motorola preferred devices temperature, light and speed control; process and remote control; and warning systems where reli
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR506/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR506/D .PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. • Passivated Surface for Reliability a
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR310/D Reverse Blocking Triode Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR310/D Reverse Blocking Triode Thyristors .designed for industrial and consumer applications such as temperature, light and speed control; process and remote controls; warning systems; capacitive discharge circuits and MPU interface. • Center Gat
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR265-2/D Silicon Controlled Rectifiers
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR265-2/D Silicon Controlled Rectifiers .designed for inverse parallel SCR output devices for solid state relays, welders, battery chargers, motor controls or applications requiring high surge operation. • Photo Glass Passivated Blocking Junctions
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR25/D *Motorola preferred devices
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR25/D *Motorola preferred devices Designed primarily for half–wave ac control applications, such as motor SCRs controls, heating controls, and power supplies; or wherever half–wave, silicon 25 AMPERES RMS gate–controlled devices are needed. 400 t
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR264-4/D Silicon Controlled Rectifiers
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR264-4/D Silicon Controlled Rectifiers SCRs .designed for back-to-back SCR output devices for solid state relays or applications 40 AMPERES RMS requiring high surge operation. 200 thru 800 VOLTS • Photo Glass Passivated Blocking Junctions for Hig