Download: IRGPF30F

PD - 9.1026 IRGPF30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to VCES = 900V 10kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ≤ 3.7V G @VGE = 15V, IC = 11A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-vol...
Author: Filibert Took Shared: 8/19/19
Downloads: 1416 Views: 4344

Content

PD - 9.1026 IRGPF30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features C

• Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to VCES = 900V 10kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ≤ 3.7V

G

@VGE = 15V, IC = 11A

E

n-channel

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high- current applications.

TO-247AC Absolute Maximum Ratings

Parameter Max. Units VCES Collector-to-Emitter Voltage 900 V IC @ TC = 25°C Continuous Collector Current 20 IC @ TC = 100°C Continuous Collector Current 11 A ICM Pulsed Collector Current 40 ILM Clamped Inductive Load Current 40 VGE Gate-to-Emitter Voltage ±20 V EARV Reverse Voltage Avalanche Energy 10 mJ PD @ TC = 25°C Maximum Power Dissipation 100 W PD @ TC = 100°C Maximum Power Dissipation 42 TJ Operating Junction and -55 to +150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

Thermal Resistance

Parameter Min. Typ. Max. Units RθJC Junction-to-Case — — 1.2 RθCS Case-to-Sink, flat, greased surface — 0.24 — °C/W RθJA Junction-to-Ambient, typical socket mount — — 40 Wt Weight — 6 (0.21) — g (oz)

C-255 Revision 0

,

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 900 — — V VGE = 0V, IC = 250µA V(BR)ECS Emitter-to-Collector Breakdown Voltage 20 — — V VGE = 0V, IC = 1.0A ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.83 — V/°C VGE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage — 2.6 3.7 IC = 11A VGE = 15V — 3.3 — V IC = 20A See Fig. 2, 5 — 2.9 — IC = 11A, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance 3.6 6.9 — S VCE = 100V, IC = 11A ICES Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 900V — — 1000 VGE = 0V, VCE = 900V, TJ = 150°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) — 22 33 IC = 11A Qge Gate - Emitter Charge (turn-on) — 5.1 7.7 nC VCC = 400V See Fig. 8 Qgc Gate - Collector Charge (turn-on) — 8.0 12 VGE = 15V td(on) Turn-On Delay Time — 27 — TJ = 25°C tr Rise Time — 9.7 — ns IC = 11A, VCC = 720V td(off) Turn-Off Delay Time — 160 280 VGE = 15V, RG = 23Ω tf Fall Time — 140 240 Energy losses include "tail" Eon Turn-On Switching Loss — 0.33 — Eoff Turn-Off Switching Loss — 0.67 — mJ See Fig. 9, 10, 11, 14 Ets Total Switching Loss — 1.0 1.9 td(on) Turn-On Delay Time — 27 — TJ = 150°C, tr Rise Time — 12 — ns IC = 11A, VCC = 720V td(off) Turn-Off Delay Time — 260 — VGE = 15V, RG = 23Ω tf Fall Time — 250 — Energy losses include "tail" Ets Total Switching Loss — 2.0 — mJ See Fig. 10, 14 LE Internal Emitter Inductance — 13 — nH Measured 5mm from package Cies Input Capacitance — 560 — VGE = 0V Coes Output Capacitance — 50 — pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance — 7.3 — ƒ = 1.0MHz Notes: Repetitive rating; V GE=20V, pulse width Repetitive rating; pulse width limited Pulse width 5.0µs, limited by max. junction temperature. by maximum junction temperature. single shot. ( See fig. 13b ) VCC=80%(VCES), VGE=20V, L=10µH, Pulse width ≤ 80µs; duty factor ≤ 0.1%. RG= 23Ω, ( See fig. 13a )

C-256

, F or bo th : T ria ng u larwave : D u ty c yc le : 5 0 % TJ = 125°C Tsink= 9 0 °CGatedriveasspecifiedPowerDis s ipa tion = 24WClam p vo lta ge : 20 80 % o f ra tedSquarewav e : 60% o f ra ted vo ltag e Idealdiodes 0.1 1 10 100 f, F requency(kHz)

Fig. 1 - Typical Load Current vs. Frequency

(For square wave, I=IRMS of fundamental; for triangular wave, I=I PK) 100 100 TJ = 25°C TJ = 25°C TJ = 150°C TJ = 150°C 10 10VGE= 15VVCC= 100V 20µs P ULSE W ID TH 5µs PULSE W IDTH11110 5 10 15 20

VC E , Co llector-to-Em itter Voltage (V) VG E , G ate -to-E m itter Vo lta ge (V ) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics C-257

I C , C ollector-to-Emitter C urrent (A ) LOADCURRENT(A ) I C , Co llector-to-Em itter C urrent (A ), 20 5.0VGE= 15V VG E = 15V 80µs P ULSE W ID TH IC = 22A 4.0IC= 11A3.0 IC = 5.5A 0 2.0 25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , C ase Tem perature (°C) TC , C ase Tem perature (°C)

Fig. 4 - Maximum Collector Current vs. Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature Case Temperature

D = 0.50 0.20 0.10 PDM 0.1 0.05 t1 0.02t0.01 S INGLE PULSE (THERMAL RESPONSE) Notes : 1 . D uty fac tor D = t 1 / t 2 2. P eak TJ = PDMxZthJC+ TC0.01 0.00001 0.0001 0.001 0.01 0.1 1 10t1, R ectangular Pulse Duration (sec)

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case C-258

Therm al Response (ZthJC) Maxim umDCCollector C urrent (A ) VC E , C o llector-to-Em itter Voltage (V), 1000 20VGE= 0V, f = 1MHzVCE= 400VCies= Cge+ Cgc, CceSHORTEDIC= 11ACres= C gc 800Coes= Cce+ C gc 16 C ies 600 12 Co es 400 8 200 4 Cr es00110 1000510 15 20 25VCE, C o lle c to r-to -E m itterVoltage(V ) Q g , Total G ate Charge (nC )

Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs. Collector-to-Emitter Voltage Gate-to-Emitter Voltage

1 .10 10 VC C = 720VRG= 22 Ω VG E = 15VVGE= 15V I = 22A 1 .08 TC = 25°CVCC= 720V

C

I C = 11A 1 .06IC= 11A 1 .041IC= 5.5A 1 .02 1 .00 0 .98 0.1 20 25 30 35 40 45 50 55 -60 -40 -20 0 20 40 60 80 100 120 14 0 160RG, Gate Res istance (Ω ) TC , Case Temperatu re (°C )

W Fig. 9 - Typical Switching Losses vs. Gate Fig. 10 - Typical Switching Losses vs. Resistance Case Temperature C-259

Tota l Sw itch ing L osse s (mJ) C , C ap ac ita nc e (pF ) T o talSwitch ing Losse s (m J) VG E , Gate-to-Em itter Voltage (V ), 6.0 R = 22 Ω 100G VGGEE= 20VTC= 150°C TJ = 125°C 5.0VCC= 720VVGE= 15V SAFEOPER ATIN G AR EA 4.0 10 3.0 2.0 1 1.0 0.0 0.10510 15 20 25 1 10 100 1000IC, C o llector-to -E m itte r Current (A ) VC E , C o lle cto r- to -E m itterVoltage(V ) Fig. 11 - Typical Switching Losses vs. Fig. 12 - Turn-Off SOA Collector-to-Emitter Current

Refer to Section D for the following: Appendix F: Section D - page D-8 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 3 - JEDEC Outline TO-247AC (TO-3P) Section D - page D-13

C-260 Total Sw itching Losses (m J) I C , Collec to r-to -E m itterCurrent(A )]
15

Similar documents

DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07
DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 FEATURES PINNING - TO-92 • High speed switching PIN SYMBOL DESCRIPTION • Interchangeability of drain and source
DISCRETE SEMICONDUCTORS DATA SHEET Line-ups RF Power Transistors for UHF 1996 Feb 12 File under Discrete Semiconductors, SC08b
DISCRETE SEMICONDUCTORS DATA SHEET Line-ups RF Power Transistors for UHF 1996 Feb 12 File under Discrete Semiconductors, SC08b INTRODUCTION In this section, we present information on recommended circuit line-ups in the main RF power application areas. A comprehensive range of output power levels is
Typical Characteristics
KSP94 High Voltage Transistor • High Collector-Emitter Voltage: VCEO= -400V • Low Collector-Emitter Saturation Voltage • Complement to KSP44 1 TO-92 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units V
DISCRETE SEMICONDUCTORS DATA SHEET J308; J309; J310 N-channel silicon field-effect transistors Product specification 1996 Jul 30 Supersedes data of April 1995
DISCRETE SEMICONDUCTORS DATA SHEET J308; J309; J310 N-channel silicon field-effect transistors Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 FEATURES PINNING - TO-92 • Low noise PIN SYMBOL DESCRIPTION • Interchangeability of drain and source
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC223/D Silicon Bidirectional Triode Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC223/D Silicon Bidirectional Triode Thyristors .designed primarily for full-wave ac control applications such as lighting sysjtems, heater controls, motor controls and power supplies; or wherever full-wave silicon- gate-controlled devices are nee
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC218FP/D Silicon Bidirectional Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC218FP/D Silicon Bidirectional Thyristors ISOLATED TRIACs .designed primarily for full-wave ac control applications, such as light dimmers, THYRISTORS motor controls, heating controls and power supplies. 8 AMPERES RMS • Blocking Voltage to 800 Vo
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC212FP/D Silicon Bidirectional Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC212FP/D Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as light dimmers, ISOLATED TRIACs motor controls, heating controls and power supplies; or wherever full-wave silicon THYRISTORS gate control
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC218/D Silicon Bidirectional Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC218/D Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies. TRIACs • Blocking Voltage to 800 Volts 8 AMPERES RMS • Glass Passivated
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as light dimmers,
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors swi
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC210FP/D Silicon Bidirectional Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC210FP/D Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as light dimmers, ISOLATED TRIACs motor controls, heating controls and power supplies; or wherever full-wave silicon THYRISTORS gate control
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as light dimmers,
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors swi
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC15S/D Silicon Bidirectional Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MAC15S/D Silicon Bidirectional Thyristors Designed for industrial and consumer applications for full wave control of ac TRIACS loads such as appliance controls, heater controls, motor controls, and other 15 AMPERES RMS power switching applications.
SEMICONDUCTOR TECHNICAL DATA TRIACS 15 AMPERES RMS 400 thru 800 Designed for high performance full-wave ac control applications where high VOLTS noise immunity and high commutating di/dt are required.
SEMICONDUCTOR TECHNICAL DATA *Motorola preferred devices TRIACS 15 AMPERES RMS 400 thru 800 Designed for high performance full-wave ac control applications where high VOLTS noise immunity and high commutating di/dt are required. • Blocking Voltage to 800 Volts • On-State Current Rating of 15 Amperes
SEMICONDUCTOR TECHNICAL DATA *Motorola preferred devices TRIACS Designed for high performance full-wave ac control applications where high 15 AMPERES RMS
SEMICONDUCTOR TECHNICAL DATA *Motorola preferred devices TRIACS Designed for high performance full-wave ac control applications where high 15 AMPERES RMS noise immunity and high commutating di/dt are required. 400 thru 800 • Blocking Voltage to 800 Volts VOLTS • On-State Current Rating of 15 Amperes
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as solid-state relays,
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors .designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristor
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Triode Thyristors .designed primarily for full-wave ac control applications, such as solid-state relays,
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Triode Thyristors .designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type th
*Motorola preferred devices Silicon Bidirectional Thyristors TRIACS12 AMPERES RMS
SEMICONDUCTOR TECHNICAL DATA *Motorola preferred devices Silicon Bidirectional Thyristors TRIACS12 AMPERES RMS 400 thru 800 Designed for high performance full–wave ac control applications where high VOLTS noise immunity and commutating di/dt are required. • Blocking Voltage to 800 Volts • On-State C
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and other light industrial or consumer applications. Supplied in surface mount package for use in
SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Thyristors *Motorola preferred devices Designed for use in solid state relays, MPU interface, TTL logic and other light industrial or consumer applications. Supplied in surface mount package for use in automated manufacturing. TRIAC • Sensitive Gate
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR8/D 8 AMPERES RMS
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR8/D *Motorola preferred devices SCRs 8 AMPERES RMS 400 thru 800 Designed primarily for half–wave ac control applications, such as motor VOLTS controls, heating controls, and power supplies; or wherever half–wave, silicon gate–controlled devices
Order this document *Motorola preferred devices SCRs
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR8S/D *Motorola preferred devices SCRs 8 AMPERES RMS Designed primarily for half–wave ac control applications, such as motor 400 thru 800 controls, heating controls, and power supplies; or wherever half–wave, silicon VOLTS gate–controlled devices
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR8DSM/D Reverse Blocking Thyristors Motorola Preferred Devices
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR8DSM/D Reverse Blocking Thyristors Motorola Preferred Devices Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. • Small Size SCRs • Passivated D
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR8DCM/D Reverse Blocking Thyristors Motorola Preferred Devices
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR8DCM/D Reverse Blocking Thyristors Motorola Preferred Devices Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. • Small Size SCRs • Passivated D
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR72/D Reverse Blocking Triode Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR72/D Reverse Blocking Triode Thyristors .designed for industrial and consumer applications such as temperature, light and speed control; process and remote controls; warning systems; capacitive discharge circuits and MPU interface. • Center Gate
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR703A/D Reverse Blocking Triode Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR703A/D Reverse Blocking Triode Thyristors .PNPN devices designed for high volume, low cost consumer applications such as *Motorola preferred devices temperature, light and speed control; process and remote control; and warning systems where reli
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR506/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR506/D .PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. • Passivated Surface for Reliability a
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR310/D Reverse Blocking Triode Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR310/D Reverse Blocking Triode Thyristors .designed for industrial and consumer applications such as temperature, light and speed control; process and remote controls; warning systems; capacitive discharge circuits and MPU interface. • Center Gat
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR265-2/D Silicon Controlled Rectifiers
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR265-2/D Silicon Controlled Rectifiers .designed for inverse parallel SCR output devices for solid state relays, welders, battery chargers, motor controls or applications requiring high surge operation. • Photo Glass Passivated Blocking Junctions
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR25/D *Motorola preferred devices
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR25/D *Motorola preferred devices Designed primarily for half–wave ac control applications, such as motor SCRs controls, heating controls, and power supplies; or wherever half–wave, silicon 25 AMPERES RMS gate–controlled devices are needed. 400 t
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR264-4/D Silicon Controlled Rectifiers
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR264-4/D Silicon Controlled Rectifiers SCRs .designed for back-to-back SCR output devices for solid state relays or applications 40 AMPERES RMS requiring high surge operation. 200 thru 800 VOLTS • Photo Glass Passivated Blocking Junctions for Hig
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR225FP/D Reverse Blocking Thyristors
Order this document SEMICONDUCTOR TECHNICAL DATA by MCR225FP/D Reverse Blocking Thyristors .designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. ISOLATED SCRs 25 AMPERES RMS • Glass Passivated Junctions with Center Gate